Radiation Effects in Electronics (R2E): Challenges for the Future Dr. Robert Baumann (TI/IEEE Fellow) Chief Technologist Aerospace & Defense (MHRS Group) High Performance Analog Products Texas Instruments, Dallas, Texas, USA © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 2015 Future Circular Colliders Conference Slide 1/12 Why we care: Accelerator Up-Time ~400 h Downtime ~250 h Downtime Relocation & Shielding Equipment Upgrades from M. Brugger et al., “R2E Project - Next Steps R2E”, Feb 11, 2014 (CERN) © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 2015 Future Circular Colliders Conference Slide 2/12 Manufacturer Component Grades • COTS (you get what you get & it WILL change) • COTS+ - Lot control (eliminate lot-to-lot variation) • EP (Enhanced Performance/Plastic) – extended temp range, qualification, tracking, rev control., change notice • Military – Ceramic package, QMLQ, similar to EP • Space – Military + QMLQ/QMLV, possibly RHA • Grounds-up – define what you need (ASIC or Prod. Dev.) Use of lowest cost components (COTS) is almost NEVER the lowest cost system solution © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 2015 Future Circular Colliders Conference Slide 3/12 Manifestations of Radiation • Transient Charge Generation • Charge Transport and Trapping • Nuclear Reactions • Structural (Lattice) Damage Dose Effects Single Event Effects chronic stochastic Dose Rate Effects © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 2015 Future Circular Colliders Conference Slide 4/12 Total Ionizing Dose James R. Schwank et al., “Radiation Effects in MOS Oxides”, IEEE Trans. Nucl. Sci., 55(4), Aug. 2008, pp. 1833-1853. © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 2015 Future Circular Colliders Conference Slide 5/12 TID Effects on MOS & Bipolar IB ~ Rsurface James R. Schwank et al., “Radiation Effects in MOS Oxides”, IEEE Trans. Nucl. Sci., 55(4), Aug. 2008, pp. 1833-1853. N+ P- M. Shaneyfelt, P. Dodd, B. Draper, R. Flores, “Challenges in hardening technologies using shallow-trench isolation”, IEEE Nucl. Sci, 45 (6), p1, Dec. 1998, pp. 2584 - 2592 © Robert Baumann 3/27/2015 TI Information – Selective Disclosure πΌπΆ π½= πΌπ΅ N From http://parts.jpl.nasa.gov/docs/Radcrs_Final.pdf 2015 Future Circular Colliders Conference Slide 6/12 Total Ionizing Dose - Challenges Adapted from M. Brugger et al., “R2E Project - Next Steps R2E”, Feb 11, 2014 (CERN) Linac 4 beam line Plan for replacement LHC Machine electronics Protected Shielded Tunnel CPS tunnel walls PSB beam line SPS tunnel walls CPS beam line SPS beam line 10-4 10-3 10-2 10-1 100 101 102 103 104 105 106 TID [Gy.y-1] COTS/MIL SPACE Assuming 10 year lifetime © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 2015 Future Circular Colliders Conference Slide 7/12 Neutron/Proton Dose Interstitial vacancy • Primary effect: reduction of minority carrier lifetime. • MOSFETs are majority carrier devices = not very sensitive to ND. • Advanced BJT technologies are less sensitive to minority lifetime reduction (very small base region = small s). © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 2015 Future Circular Colliders Conference Slide 8/12 N/P Dose Challenges Linac 4 beam line Adapted from M. Brugger et al., “R2E Project - Next Steps R2E”, Feb 11, 2014 (CERN) PSB beam line New tech? or need replacement CPS tunnel walls SPS tunnel walls CPS beam line SPS beam line LHC Machine electronics Protected Shielded Tunnel 1MeV neutron equivalent 106 107 108 109 1010 1011 1012 1013 1014 1015 1016 [cm-2.y-1] BIPOLAR MOSFETS Assuming 10 year lifetime © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 2015 Future Circular Colliders Conference Slide 9/12 Most Common SEE +V V Ion Track Ion Track n+ diffusion p- epi Potential Contour Deformation Drift Collection Diffusion Collection Electron-Hole Pairs Recombination Parasitic bipolar action 1.0E+00 Reverse-biased N+/P junction 1.0E-02 IANODE (A) VH, IH 1.0E-04 RSUB, VTRIGG, ITRIGG 1.0E-06 betapnp 1.0E-08 1.0E-10 1.0E-12 0.0 Single Event Transient/SE Upset © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 0.5 1.0 1.5 2.0 2.5 3.0 VANODE (V) Single Event Latch Up 2015 Future Circular Colliders Conference Slide 10/12 SEE Challenges Ground 105 106 Air 107 Earth Orbit 108 109 1010 1011 1012 1013 1014 1015 HEH [cm-2.y-1] Linac 4 beam line Expect to need system-level mitigation/ resiliency LHC Machine electronics Protected Shielded Adapted from M. Brugger et al., “R2E Project - Next Steps R2E”, Feb 11, 2014 (CERN) Tunnel CPS tunnel walls PSB beam line SPS tunnel walls CPS beam line SPS beam line Generic 28nm product w 64Mbits SRAM ECC (SECDED) No ECC ECC (SECDED) © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 1 kFIT (AVG ~ 1 fail/114 yrs) 1 MFIT (AVG ~ 1 fail/0.114 yrs) 2015 Future Circular Colliders Conference Slide 11/12 RHA - Summary • Technology Scaling has reduced rad sensitivity BUT a wide number of rad environments cannot be serviced by COTS alone. • Making the correct choices is HARD & mistakes are expensive! • Invest in radiation characterization and modeling (Tools) & build and maintain radiation expertise and experience (People). • COTS+, MIL, EP, Space parts can help meet many system reqs. BUT component solutions are not sufficient at higher fluences. • Disparate R&D group requests should be organized and combined when possible = better pricing through volume! © Robert Baumann 3/27/2015 TI Information – Selective Disclosure 2015 Future Circular Colliders Conference Slide 12/12