2015 Future Circular Colliders Conference - Indico

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Radiation Effects in
Electronics (R2E):
Challenges for the Future
Dr. Robert Baumann (TI/IEEE Fellow)
Chief Technologist
Aerospace & Defense (MHRS Group)
High Performance Analog Products
Texas Instruments, Dallas, Texas, USA
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
2015 Future Circular Colliders Conference
Slide 1/12
Why we care: Accelerator Up-Time
~400 h
Downtime
~250 h
Downtime
Relocation
& Shielding
Equipment
Upgrades
from M. Brugger et al., “R2E
Project - Next Steps R2E”,
Feb 11, 2014 (CERN)
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
2015 Future Circular Colliders Conference
Slide 2/12
Manufacturer Component Grades
• COTS (you get what you get & it WILL change)
• COTS+ - Lot control (eliminate lot-to-lot variation)
• EP (Enhanced Performance/Plastic) – extended temp
range, qualification, tracking, rev control., change notice
• Military – Ceramic package, QMLQ, similar to EP
• Space – Military + QMLQ/QMLV, possibly RHA
• Grounds-up – define what you need (ASIC or Prod. Dev.)
Use of lowest cost components (COTS) is almost
NEVER the lowest cost system solution
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
2015 Future Circular Colliders Conference
Slide 3/12
Manifestations of Radiation
• Transient Charge Generation
• Charge Transport and Trapping
• Nuclear Reactions
• Structural (Lattice) Damage
Dose
Effects
Single Event
Effects
chronic
stochastic
Dose Rate
Effects
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
2015 Future Circular Colliders Conference
Slide 4/12
Total Ionizing Dose
James R. Schwank et al., “Radiation Effects in MOS
Oxides”, IEEE Trans. Nucl. Sci., 55(4), Aug. 2008, pp.
1833-1853.
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
2015 Future Circular Colliders Conference
Slide 5/12
TID Effects on MOS & Bipolar
IB ~ Rsurface
James R. Schwank et al.,
“Radiation Effects in MOS
Oxides”, IEEE Trans. Nucl.
Sci., 55(4), Aug. 2008, pp.
1833-1853.
N+
P-
M. Shaneyfelt, P. Dodd, B. Draper, R. Flores, “Challenges in hardening
technologies using shallow-trench isolation”, IEEE Nucl. Sci, 45 (6), p1, Dec.
1998, pp. 2584 - 2592
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
𝐼𝐢
𝛽=
𝐼𝐡
N
From http://parts.jpl.nasa.gov/docs/Radcrs_Final.pdf
2015 Future Circular Colliders Conference
Slide 6/12
Total Ionizing Dose - Challenges
Adapted from M. Brugger et al.,
“R2E Project - Next Steps R2E”,
Feb 11, 2014 (CERN)
Linac 4 beam line
Plan for
replacement
LHC Machine electronics
Protected Shielded
Tunnel
CPS tunnel walls
PSB beam line
SPS tunnel walls
CPS beam line
SPS beam line
10-4
10-3
10-2
10-1
100
101
102
103
104
105
106
TID
[Gy.y-1]
COTS/MIL
SPACE
Assuming 10 year lifetime
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
2015 Future Circular Colliders Conference
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Neutron/Proton Dose
Interstitial
vacancy
• Primary effect: reduction of minority carrier lifetime.
• MOSFETs are majority carrier devices = not very sensitive to ND.
• Advanced BJT technologies are less sensitive to minority lifetime
reduction (very small base region = small s).
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
2015 Future Circular Colliders Conference
Slide 8/12
N/P Dose Challenges
Linac 4 beam line
Adapted from M. Brugger et al.,
“R2E Project - Next Steps R2E”,
Feb 11, 2014 (CERN)
PSB beam line
New tech? or
need
replacement
CPS tunnel walls
SPS tunnel walls
CPS beam line
SPS beam line
LHC Machine electronics
Protected Shielded
Tunnel
1MeV neutron equivalent
106 107 108 109 1010 1011 1012 1013 1014 1015 1016 [cm-2.y-1]
BIPOLAR
MOSFETS
Assuming 10 year lifetime
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
2015 Future Circular Colliders Conference
Slide 9/12
Most Common SEE
+V
V
Ion Track
Ion Track
n+ diffusion
p- epi
Potential
Contour
Deformation
Drift
Collection
Diffusion Collection
Electron-Hole
Pairs
Recombination
Parasitic bipolar action
1.0E+00
Reverse-biased N+/P junction
1.0E-02
IANODE (A)
VH, IH
1.0E-04
RSUB, VTRIGG, ITRIGG
1.0E-06
betapnp
1.0E-08
1.0E-10
1.0E-12
0.0
Single Event Transient/SE Upset
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
0.5
1.0
1.5
2.0
2.5
3.0
VANODE (V)
Single Event Latch Up
2015 Future Circular Colliders Conference
Slide 10/12
SEE Challenges
Ground
105
106
Air
107
Earth Orbit
108
109
1010 1011 1012 1013 1014 1015
HEH
[cm-2.y-1]
Linac 4 beam line
Expect to need
system-level
mitigation/
resiliency
LHC Machine electronics
Protected Shielded
Adapted from M. Brugger et
al., “R2E Project - Next Steps
R2E”, Feb 11, 2014 (CERN)
Tunnel
CPS tunnel walls
PSB beam line
SPS tunnel walls
CPS beam line
SPS beam line
Generic 28nm product
w 64Mbits SRAM
ECC (SECDED)
No ECC
ECC (SECDED)
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
1 kFIT (AVG ~ 1 fail/114 yrs)
1 MFIT (AVG ~ 1 fail/0.114 yrs)
2015 Future Circular Colliders Conference
Slide 11/12
RHA - Summary
• Technology Scaling has reduced rad sensitivity BUT a wide
number of rad environments cannot be serviced by COTS alone.
• Making the correct choices is HARD & mistakes are expensive!
• Invest in radiation characterization and modeling (Tools) & build
and maintain radiation expertise and experience (People).
• COTS+, MIL, EP, Space parts can help meet many system reqs.
BUT component solutions are not sufficient at higher fluences.
• Disparate R&D group requests should be organized and
combined when possible = better pricing through volume!
© Robert Baumann 3/27/2015
TI Information – Selective Disclosure
2015 Future Circular Colliders Conference
Slide 12/12
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