FEATURES
UPC2771T
D
3V, 2400 MHz
MEDIUM POWER SI MMIC AMPLIFIER
GAIN vs. FREQUENCY AND TEMPERATURE
• HIGH GAIN: 20 dB at 900 to 1500 MHz Typical
24
• HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz
+11 dBm at 1500 MHz
22
• TAPE AND REEL PACKAGING OPTION AVAILABLE
UE
• SUPER SMALL PACKAGE
Gain, GS (dB)
• LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum
TA = -40˚ C
+85˚ C
20
TA = +25˚ C
TA = +85˚ C
18
+25˚ C
-40˚ C
16
DESCRIPTION
IN
VCC = 3.0 V
0.1
0.3
1.0
3.0
Frequency, f (GHz)
NT
The UPC2771T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with fT approaching 20 GHz.
This amplifier was designed as a driver amplifier for digital
cellular applications. Operating on a 3 volt supply, this IC is
ideally suited for hand-held, portable designs.
14
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
SC
O
ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω, VCC = 3.0 V)
SYMBOLS
PART NUMBER
UPC2771T
PACKAGE OUTLINE
T06
PARAMETERS AND CONDITIONS
ICC
Circuit Current (no signal)
GS
Small Signal Gain,
fU
UNITS
MIN
mA
f = 900 MHz
f = 1500 MHz
dB
dB
19
17
TYP
MAX
36
45
21
20
24
23
Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 100 MHz)
GHz
1.7
2.1
P1dB
1 dB Compressed Output Power,
f = 900 MHz
f = 1500 MHz
dBm
dBm
+9
+7
+11.5
+9.5
PSAT
Saturated Output Power,
f = 900 MHz
f = 1500 MHz
f = 900 MHz
f = 1500 MHz
dBm
dBm
dB
dB
Input Return Loss,
f = 900 MHz
f = 1500 MHz
dB
dB
10
10
14
14
RLOUT
Output Return Loss,
f = 900 MHz
f = 1500 MHz
dB
dB
6.5
5.5
9.5
8.5
ISOL
Isolation,
f = 900 MHz
f = 1500 MHz
dB
dB
25
25
30
30
OIP3
SSB OutputThird Order Intercept Point
f = 900, 902 MHz
f = 1500, 1502 MHz
Noise Figure,
DI
NF
RLIN
dBm
dBm
+12.5
+11
6
6
7.5
7.5
+16
+13
California Eastern Laboratories
UPC2771T
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
UNITS
RATINGS
VCC
ICC
Supply Voltage
Total Supply Current
V
mA
3.6
77.7
PIN
Input Power
dBm
+13
PT
Total Power Dissipation2
mW
280
TOP
Operating Temperature
°C
-40 to +85
TSTG
Storage Temperature
°C
-55 to +150
VCC
1000 pF
L*
6
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Mounted on a 50 X 50 X 1.6 mm epoxy glass PWB (TA = 85°C).
50 Ω
IN
1
1000 pF
50 Ω
OUT
D
PARAMETERS
4
1000 pF
UE
SYMBOLS
TEST CIRCUIT
2, 3, 5
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
PARAMETERS
UNITS MIN
TYP MAX
Supply Voltage
V
2.7
3
3.3
TOP
Operating Temperature
°C
-40
+25
+85
IN
VCC
* This device is tested using a bias tee with typical series inductance,
L = 1000 nH. In circuit applications, L = 50 nH is satisfactory at 900
MHz, and L = 10 nH is satisfactory at 1500 MHz.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
CIRCUIT CURRENT vs. VOLTAGE
CIRCUIT CURRENT vs. TEMPERATURE
50
30
20
10
Circuit Current, ICC (mA)
NT
40
SC
O
Circuit Current, ICC (mA)
50
1
2
3
30
20
10
0
0
0
40
-60
4
-40
-20
0
Supply Voltage, VCC (V)
40
80
100
INPUT RETURN LOSS AND
OUTPUT RETURN LOSS vs. FREQUENCY
0
24
VCC = 3.3V
VCC = 3.0V
60
Temperature (°C)
GAIN AND NOISE FIGURE
vs. FREQUENCY AND VOLTAGE
VCC = 2.7V
20
VCC = 3.0V
22
20
16
VCC = 2.7 V
14
VCC = 3.3 V
7
VCC = 3.0 V
12
5
10
NF
VCC = 2.7 V
8
3
6
0.1
0.3
1.0
Frequency, f (GHz)
3.0
Noise Figure, NF (dB)
18
-10
Return Loss (dB)
VCC = 3.0 V
DI
Gain, GS (dB)
RLout
GS
VCC = 3.3V
RLin
-20
-30
-40
0.1
0.3
1.0
Frequency, f (GHz)
3.0
UPC2771T
TYPICAL PERFORMANCE CURVES (TA = 25°)
OUTPUT POWER vs.
INPUT POWER AND VOLTAGE
ISOLATION vs. FREQUENCY
0
15
VCC = 3.3 V
VCC = 3.0V
f = 900 MHz
-40
VCC = 3.0 V
5
0
-5
-50
0.1
0.3
1.0
-25
3.0
Frequency, f (GHz)
15
VCC = 2.7 V
9
7
SC
O
5
0.3
1.0
Frequency, f (GHz)
S11 vs. FREQUENCY
(VCC = 3.0 V)
DI
0.1
-5
3.0
Pin = -3 dBm
15
TA = +85˚C
13
TA = +25˚C
11
TA = -40˚C
9
7
5
0.1
0.3
1.0
Frequency, f (GHz)
S22 vs. FREQUENCY
(VCC = 3.0 V)
0.9 GHz
0.1
0
17
NT
VCC = 3.3 V
11
-10
IN
Pin = -3 dBm
VCC = 3.0 V
-15
SATURATED OUTPUT POWER vs.
FREQUENCY AND TEMPERATURE
17
13
-20
Input Power, PIN (dBm)
SATURATED OUTPUT POWER vs.
FREQUENCY AND VOLTAGE
Saturated Output Power, PO(SAT), (dBm)
VCC = 2.7 V
UE
-30
10
D
Output Power, POUT (dBm)
-20
Saturated Output Power, PO(SAT), (dBm)
Isolation, ISOL (dB)
-10
1.5 GHz
1.9 GHz
1.9 GHz
0.1 GHz
0.9 GHz
1.5 GHz
3.0
UPC2771T
OUTLINE DIMENSIONS
LEAD CONNECTIONS
(Units in mm)
UPC2771T
PACKAGE OUTLINE T06
(Top View)
(Bottom View)
+0.2
2.8 -0.3
3
1.9±0.2 2
0.95
5
1
6
2
1
+0.2
1.1 -0.1
-0.05
0.3 +0.10
5
5
2
6
6
1. INPUT
2. GND
3. GND
4. OUTPUT
5. GND
6. VCC
0.13±0.1
0.8
3
4
UE
4
C2H
3
0.95
2.9±0.2
4
D
+0.2
1.5 -0.1
IN
0 to 0.1
RECOMMENDED P.C.B. LAYOUT (Units in mm)
EQUIVALENT CIRCUIT
NT
3.10
3
4
2
0.95
SC
O
5
1
VCC
OUT
IN
6 0.5 MIN
1.0
MIN
1.0
MIN
DI
Note:
All dimensions are typical unless otherwise specified.
ORDERING INFORMATION
PART NUMBER
QTY
UPC2771T-E3
3K/Reel
Note:
Embossed Tape, 8 mm wide.
EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA
CALIFORNIA EASTERN LABORATORIES, INC
DATA SUBJECT TO CHANGE WITHOUT NOTICE
· Headquarters · 4590 Patrick Henry Drive ·
Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393/FAX (408) 988-0279
PRINTED IN USA ON RECYCLED PAPER 11/95
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