ANEL H2065: Solid State Electronics Short Title: Solid State Electronics APPROVED Full Title: Solid State Electronics Language of Instruction: English Module Code: ANEL H2065 Credits: 5 NFQ Level: 6 Field of Study: Electronics and automation Module Delivered in 3 programme(s) Reviewed By: JAMES WRIGHT Module Author: JAMES WRIGHT Module Description: The aim of this module is to provide the student with a broad knowledge of analogue circuit techniques including the design of amplifier circuits. The module will examine the basic concepts of amplification, biasing circuits, circuit analysis of transistor based circuits as well as circuit construction and measurements. A circuit simulation tool will be used as part of the design environment. Learning Outcomes On successful completion of this module the learner will be able to: LO1 Explain semiconductor properties with respect to issues such as intrinsic material, extrinsic material, diffusion, material doping, mobility, resistivity, depletion region LO2 Explain the operation of devices such as Junction Diodes, Light Emitting Diodes, Bipolar Junction Transistors and MOSFETs including biasing, small signal analysis and amplifier configurations LO3 Design electronic circuits for signal amplification including the use of circuit simulators to support the design process LO4 Analyse the frequency characteristics of a single stage amplifier LO5 Analyse and design basic voltage and current references including band gap references LO6 Explain the ideal and practical characteristics of the Operational Amplifier LO7 Construct active circuits, perform electrical measurements, complete calculations, analyse limitations and submit written reports. Pre-requisite learning Co-requisite Modules 3557 ANEL H1002 Analogue Electronics ANEL H2065: Solid State Electronics Module Content & Assessment Content (The percentage workload breakdown is inidcative and subject to change) % Semiconductors : Energy bands of metals, semiconductors and insulators. Intrinsic and extrinsic semiconductors. p-type and n-type semiconductors. Charge carriers. Conductivity of semiconductors 12.00% The Bipolar Transistor Structure and operation. Common-base and common emitter configuration.Transistor gain calculations; bias conditions. Thermal runaway 26.00% The MOSFET. Operation and structure of the MOSFET in depletion and enhancement modes. I-V characteristics of the MOSFET. Biasing circuits and amplifier circuits. 20.00% Operation Amplifiers and Applications Op-amp applications and effects of limitations such as input bias current, input offset current, input offset voltage, gain-bandwidth product and slew rate. 17.00% Amplifier Design Basic analysis and design of BJT and MOSFET amplifier circuits. Frequency response of amplifiers, feedback techniques, stability of amplifiers. Using CAD Tools to design the amplifer circuit 25.00% Assessment Breakdown % Course Work 40.00% End of Module Formal Examination 60.00% Course Work Assessment Type Assessment Description Outcome addressed % of total Assessment Date Continuous Assessment Weekly Laboratory Sessions involving Circuit Construction, circuit analyse, and report writing 2,3,4,5,7 15.00 Ongoing Practical/Skills Evaluation Practical Laboratory Test 2,4,5,7 5.00 Week 4 Continuous Assessment Mid-Term Assessment 1,2,3,4,5 10.00 Week 6 Practical/Skills Evaluation Practical Laboratory Test relating to circuit construction to this point 2,4,5,7 10.00 Week 11 End of Module Formal Examination Assessment Type Assessment Description Outcome addressed % of total Assessment Date Formal Exam End-of-Semester Final Examination 1,2,3,4,5,7 60.00 End-of-Semester Reassessment Requirement Repeat examination Reassessment of this module will consist of a repeat examination. It is possible that there will also be a requirement to be reassessed in a coursework element. Reassessment Description The student may be required to take laboratory sessions which have been missed during the first sitting of the module IT Tallaght reserves the right to alter the nature and timings of assessment ANEL H2065: Solid State Electronics Module Workload Workload: Full Time Workload Type Workload Description Hours Frequency Average Weekly Learner Workload Lecture Classroom work 2.00 Every Week 2.00 Laboratories Directed practical laboratory session 2.00 Every Week 2.00 Independent Learning Work conducted outside of classroom involving reporting, assignments and problems 3.00 Every Week 3.00 Total Weekly Learner Workload 7.00 Total Weekly Contact Hours 4.00 Workload: Part Time Workload Type Workload Description Hours Frequency Average Weekly Learner Workload Lecture Classroom work 2.00 Every Week 2.00 Laboratories Directed Practical laboratory work 2.00 Every Second Week 1.00 Independent Learning Work conducted outside of classroom involving reporting, assignments and problems 4.00 Every Week 4.00 Total Weekly Learner Workload 7.00 Total Weekly Contact Hours 3.00 Module Resources Required Book Resources Thomas L. Floyd 2006, Electronics fundamentals, Pearson Prentice Hall Upper Saddle River, N.J. [ISBN: 978-0131995857] Streetman, Ben ; Banerjee, Sanjay 2010, Solid State Electronic Devices, Sixth Ed., Prentice Hall USA [ISBN: 978-0-13-245479-7] David A. Bell 2008, Fundamentals of electronic devices and circuits, 5th Ed., Canada [ISBN: 9780195425239] Theodore F. Bogart, Jeffrey S. Beasley, Guillermo Rico 2001, Electronic devices and circuits, Prentice Hall Upper Saddle River, N.J. [ISBN: 978-0130851789] This module does not have any article/paper resources This module does not have any other resources Module Delivered in Programme Code Programme Semester Delivery TA_EAELE_B Bachelor Degree in Engineering (Honours) in Electronic Engineering 4 Mandatory TA_EAELE_D Bachelor of Engineering in Electronic Engineering 3 Mandatory TA_EELEC_C Higher Certificate in Engineering in Electronic Engineering 3 Mandatory