02/2016
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Printable Doping
Europe
Merck Chemicals Ltd.
Dr. Richard Harding
Chilworth Science Park, University Parkway
SO16 7QD Chilworth, United Kingdom
Phone: +44-23-8076-3300
richard.harding@merckgroup.com
Materials
Japan
Merck Ltd.
Mr. Shinji Shimizu
ARCO Tower,
1-8-1 Shimomeguro 1-chome
Meguro-ku
Tokyo 153-8927, Japan
Phone: +81-3-5434-4733
shinji.shimizu@merckgroup.com
For New Generation High-Efficiency
Solar Cells
Korea
Merck Advanced Technologies Ltd.
Ms. Hye-Jung Lee
4F. Haesung-2-Building
Teheran-ro 508, Gangnam-gu,
Seoul 135-725, Korea
Phone: +82-2-2185-3858
hye-jung.lee@merckgroup.com
China/Taiwan
Merck Display Materials (Shanghai) Co., Ltd.
Ms. Selina Qu
No. 220 Longqiao Rd.,
Jinqiao Export Processing Zone,
Pudong New Area, Shanghai 201206,
P.R. China
Phone: +86-21-2083-2215
selina.qu@merckgroup.com
USA
EMD Performance Materials Corp.
Ms. Kerin L. Perez
One International Plaza, Suite 300
Philadelphia, PA 19113, USA
Phone: +1 781-533-5861
kerin.perez@emdgroup.com
www.merck4photovoltaics.com
INNOVATION &
QUALITY
EXPERTISE &
PARTNERSHIP
Merck supports the industry with
more than 100 years’ of experience in high performance and high
purity products like e.g. Liquid
Crystals. The local expertise and
global competence cover development, application know-how, manufacturing expertise and world
wide market presence. As your
reliable partner we develop tailormade, innovative structuring
concepts for the solar cell manufacturing business.
POCl3
With the isishape® concept
Merck offers boron doping materials which simplify n-type silicon
processing and enable higher
efficiency and an environmentally
friendly production at high pro­
duction speed.
doping paste
p
PRINTING
n
POCl3
*D. Stuewe et al, proceedings of the
29th EU-PVSEC, Amsterdam, 2014
CORE VALUE
PROPOSITION AND
DIFFERENTIATION
The isishape® process
consists of 3 steps:
• Printing Print doping material
where highly boron doped
regions are required (e.g. by
screen-printing, inkjet, …)
• Diffusion Expose printed wafers
to high temperature using a
conventional batch diffusion
oven, turn-on flow of POCl3 and
co-diffuse boron and phosphorus. Tune your doping profiles as
you are used to from traditional
POCl3 treatment / experience.
• Cleaning Glass layers are
removed by treatment with
diluted or buffered HF.
GLASS
ETCH
Easy, fast & low cost
of ownership
backside
n-wafer
The combined doping and barrier
performance enables simple and
precise junction formation. According to leading R&D institutes*
the isishape® doping concept is
recommended particularly for
the production of new generation
high-efficiency solar cells.
POCl3
DIFFUSION
n
Exemplary Junction
formation of an IBC
solar cell
PROCESS
WAFER
p
n
STRUCTURED
JUNCTION
Merck‘s isishape® doping paste
simultaneously acts as the p-doping
source and also a blocking/
patterning layer
Therefore it allows for
p- (via paste) and n- (via
gas phase) doping in one step
BENEFIT
•No additional structuring
required
•E
asy and precise junction
alignment by state-of-the art
screen-printing
•H
igh production yield by adding
a single screen-printing step
(compared to multiple printing
steps with boron and phosphorus
paste)
•P
ossibility of low cost of
ownership due to low Capex
and running costs (compared
to ion implantation)
SUMMARY
isishape® boron doping
materials
• Enable easy processing
of future high efficiency
n-type solar cell concepts
•R
educe number of process
steps
•E
liminate costly borontri-bromide (or chloride)
based diffusion
•U
se existing PV manu­
facturing equipment
• Eliminate masking steps
frontside