PTF080901
LDMOS RF Power Field Effect Transistor
90 W, 869–960 MHz
Description
Features
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
•
Broadband internal matching
•
Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
•
Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
- Efficiency = 60%
•
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
•
Excellent thermal stability
•
Low HCI drift
•
Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz
55
Efficiency
50
-20
45
-30
40
-40
35
-50
30
400 kHz
-60
25
-70
20
600 kHz
-80
Drain Efficiency (%)
Modulation Spectrum (dB)
0
-10
PTF080901E
Package 30248
15
-90
10
36
38
40
42
44
46
48
50
Output Power (dBm)
PTF080901F
Package 31248
ESD: Electrostatic discharge sensitive device—observe handling precautions!
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 700 mA, P OUT = 45 W, f = 959.8 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
EVM (RMS)
—
2.5
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–62
—
dBc
Modulation Spectrum @ 600 kHz
Error Vector Magnitude
ACPR
—
–74
—
dBc
Gain
Gps
—
18
—
dB
Drain Efficiency
ηD
—
40
—
%
Symbol
Min
Typ
Max
Unit
Gain
Gps
17
18
—
dB
Drain Efficiency
ηD
40
42
—
%
Intermodulation Distortion
IMD
—
–32
–29
dBc
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 650 mA, POUT = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Data Sheet
1
2004-04-05
PTF080901
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
On–State Resistance
VGS = 10 V, V DS = 0.1 V
RDS(on)
—
0.1
—
V
Operating Gate Voltage
VDS = 28 V, IDQ = 650 mA
VGS
2.5
3.2
4
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
V
Gate–Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
335
W
1.9
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RθJC
0.52
°C/W
Modulation Spectrum
EDGE EVM Performance
P OUT = 40 W, f = 959.8 MHz
V DD = 28 V, IDQ = 700 mA, f = 959.8 MHz
EVM
9
90
-30
8
80
7
70
6
60
-40
1.7
1.5
-50
400 KHz
1.3
-60
1.1
-70
0.9
600 KHz
-90
0.7
0.5
0.47
-80
0.57
0.67
0.77
0.87
EVM RMS (average %) .
1.9
-20
Modulation Spectrum (dBc)
EVM RMS (average %) .
2.1
5
50
Efficiency
4
40
3
30
2
20
EVM
1
10
0
-100
0.97
0
36
Quiescent Current (A)
Drain Efficiency (%)
Typical Performance (measurements taken in production test fixture)
38
40
42
44
46
48
50
Output Power (dBm)
All published data at TCASE = 25°C unless otherwise indicated.
Data Sheet
2
2004-04-05
PTF080901
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 650 mA, f1 = 959 MHz, f2 = 960 MHz
V DD = 28 V, IDQ = 650 mA
18
80
-10
Gain
17
3rd Order
-40
-50
5th
70
16
15
-60
50
Output Pow er
7th
-70
14
860
-80
43
45
47
49
51
880
900
920
40
960
940
Frequency (MHz)
Output Power (dBm), PEP
IM3 vs. Output Power at Selected Biases
Broadband Performance
V DD = 28 V, f1 = 959, f2 = 960 MHz
V DD = 28 V, IDQ = 650 mA, POUT = 45 W
-20
60
-30
Gain (dB), Efficiency (%)
-25
IMD (dBc)
60
Efficiency
480 mA
-35
-40
650 mA
-45
820 mA
-50
-55
0
50
-3
Efficiency
40
-6
Return Loss
30
20
-9
Return Loss (dB)
-30
Gain (dB)
IMD (dBc)
-20
Efficiency (%), POUT (dBm)
0
-12
Gain
-60
39
41
43
45
47
49
10
860
51
880
900
920
940
-15
960
Frequency (MHz)
Output Power (dBm), PEP
All published data at TCASE = 25°C unless otherwise indicated.
Data Sheet
3
2004-04-05
PTF080901
Typical Performance (cont.)
Power Sweep
Gain & Efficiency vs. Output Power
VDD = 28 V, f = 960 MHz
V DD = 28 V, IDQ = 650 mA, f = 960 MHz
20
19
IDQ = 820 mA
Gain (dB)
Power Gain (dB)
18.5
18.0
17.5
IDQ = 650 mA
IDQ = 480 mA
17.0
70
60
Gain
18
50
17
40
16
30
15
Drain Efficiency (%)
19.0
20
Efficiency
16.5
14
39
41
43
45
47
49
51
53
10
40
43
Output Power (dBm)
IS-95 CDMA Performance
52.0
Drain Efficiency (%)
51.5
51.0
50.5
60
-40
50
-45
ACP FC – 0.75 MHz
40
50.0
28
30
-50
30
-55
Efficiency
20
-60
ACPR FC + 1.98 MHz
10
26
52
V DD = 28 V, IDQ = 700 mA, f = 880 MHz
IDQ = 650 mA, f = 960 MHz
24
49
Output Power (dBm)
Output Power (at 1 dB Compression)
vs. Supply Voltage
Output Power (dBm)
46
-65
-70
0
32
40
Supply Voltage (V)
Adjacent Channel Power
Ratio (dBc)
37
41
42
43
44
45
Output Power (dBm), Avg.
All published data at TCASE = 25°C unless otherwise indicated.
Data Sheet
4
2004-04-05
PTF080901
Typical Performance (cont.)
Three–Carrier CDMA 2000 Performance
Bias Voltage vs. Temperature
VDD = 28 V, IDQ = 700 mA, f = 880 MHz
Voltage normalized to typical gate voltage.
Series show current.
Drain Efficiency (%)
45
40
1.03
1.50 A
-47
1.02
3.00 A
-50
ALT Up
35
-53
30
-56
Efficiency
25
-59
Normalized Bias Voltage
ACP Up
ACP Low
-44
Adjacent Channel
Power Ratio (dBc)
50
-62
20
39
40
41
42
43
44
45
6.00 A
1.00
7.50 A
9.00 A
0.99
0.98
0.97
0.96
-20
-65
15
4.50 A
1.01
0
20
40
60
80
100
Case Temperature (ºC)
Output Power (dBm), Avg.
D GE
NE
Broadband Circuit Impedance
Z Source Ω
860 MHz
Z Load Ω
MHz
R
jX
R
jX
860
2.50
–1.09
1.98
–1.08
920
2.67
–0.43
1.99
–0.32
940
2.79
–0.35
1.87
–0.21
960
2.94
0.12
1.85
0.27
980
2.91
0.37
1.79
0.53
0.2
980 MHz
860 MHz
0 .1
---
Frequency
980 MHz
Z Source
0.1
S
Z Load
0. 0
G
TOW ARD L OA D N GTHS
E
L
E
WAV
- W AVE LE NG THS
Z Load
0.1
Z Source
TOW AR
D
Z0 = 50 Ω
All published data at TCASE = 25°C unless otherwise indicated.
Data Sheet
5
2004-04-05
PTF080901
Test Circuit
VDD
QQ1
LM7805
R3
1.2 kV
C23
0.001 µF
Q1
BCP56
R5
10 kV
C1
10 µF, 35 V
+
R7
3.3 kV
C21
0.001 µ F
C2
0.1 µF
50 V
R6
22 kV
C22
0.001 µF
R1
10 V
R4
1.3 kV
R2
5.1 kV
L1
C3
33 pF
C7
33pF
l4
l7
l1
l2
C4
33pF
l3
C5
4.3pF
l5
+C9
C10
0.1µF
50V
10µF
35V
+ C11
10µF
35V
C12
2.2pF
DUT
RF_IN
C8
1µF
l6
C6
6.2pF
l9
C15
33pF
l10
RF_OUT
l11
C13
1.4pF
C14
0.5pF
l8
L2
C16
33pF
C17
1µF
+ C18
10µF
35V
C19
0.1µF
50V
+ C20
10µF
35V
080901_sch
Test Circuit Schematic for 960 MHz
Circuit Assembly Information
DUT
PCB
PTF080901
0.76 mm. [.030”] thick,
Microstrip
l1
l2
l3
l4
l5
l6
l7, l8
l9
l10
l11
Electrical Characteristics at 960 MHz
0.075 λ, 50 Ω
0.101 λ, 50 Ω
0.053 λ, 50 Ω
0.289 λ, 73.66 Ω
0.061 λ, 7.48 Ω
0.097 λ, 7.93 Ω
0.132 λ, 52.47 Ω
0.105 λ, 7.93 Ω
0.134 λ, 38.02 Ω
0.029 λ, 50 Ω
Data Sheet
εr = 4.5
6
LDMOS Transistor
2 oz. copper
Rogers TMM4
Dimensions: L x W (mm.)
12.83 x 1.35
17.27 x 1.35
9.14 x 1.35
50.80 x 0.75
9.27 x 16.26
14.73 x 15.24
22.61 x 1.27
16.13 x 15.24
22.35 x 2.16
4.95 x 1.37
Dimensions: L x W (in.)
0.505 x 0.053
0.680 x 0.053
0.360 x 0.053
2.000 x 0.030
0.365 x 0.640
0.580 x 0.600
0.890 x 0.050
0.635 x 0.600
0.880 x 0.085
0.195 x 0.053
2004-04-05
PTF080901
Test Circuit (cont.)
VGS
C11
C1
+
R6
5 12
10
35V
C3
R3
QQ1
C22
VDD
C7
C8
Q1
C10
C9
C12
RF_IN
L1
10
3 5V
1 00
R1 R2
LM
R4
+
C2
10
3 5V
C21
+
R5 C23
R7
C14 C15
RF_OUT
C4
C5
C16
C19
10
3 5V
C17
C18
+
C13
C6
VDD
L2
35 V
+ 10
C20
080901_assy
Reference Circuit1 (not to scale)
Component
C1, C9, C11, C18,
C20
C2, C10, C19
C3, C4, C7, C15,
C16
C5
C6
C8, C17
C12
C13
C14
C21, C22, C23
L1, L2
Q1
QQ1
R1
R2
R3
R4
R5
R6
R7
Description
Capacitor, 10 µF, 35 V
Manufacturer
Digi-Key
Capacitor, 0.1 µF, 50 V
Capacitor, 33 pF
Digi-Key
ATC
P/N or Comment
Tantalum TE Series SMD
PCS6106TR-ND
P4525-ND
100B 330
Capacitor, 4.3 pF
Capacitor, 6.2 pF
Capacitor, 1 µ, 50 V
Capacitor, 2.2 pF
Capacitor, 1.4 pF
Capacitor, 0.5 pF
Capacitor, 0.001 µF, 50 V, 0603
Ferrite, 6 mm
Transistor
Voltage Regulator
Resistor, 10 ohms, 1/4 W, 1206
Resistor, 5.1 k-ohms, 1/4 W, 1206
Resistor, 1.2 k-ohms, 1/10 W, 0603
Resistor, 1.3 k-ohms, 1/10 W, 0603
Resistor, Variable, 10 k-ohms, 1/4 W
Resistor, 22 k-ohms, 1/10 W, 0603
Resistor, 3.3 k-ohms, 1/4 W, 1206
ATC
ATC
Digi-Key
ATC
ATC
ATC
Digi-Key
Philips
Infineon
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
100B 4R3
100B 6R2
19528-ND
100B 2R2
100B 1R4
100B 0R5
PCC1772CT-ND
53/3/4.6-452
BCP56
LM7805
P10ECT-ND
P5.1KECT-ND
P1.2KGCT-ND
P1.3KGCT-ND
3224W-103ETR-ND
P22KGCT-ND
P3.3KECT-ND
1Gerber files for this circuit are available on request.
Data Sheet
7
2004-04-05
PTF080901
Ordering Information
Type
Package Outline
Package Description
Marking
PTF080901E
30248
Thermally enhanced, flange mount
PTF080901E
PTF080901F
31248
Thermally enhanced, earless
PTF080901F
Package Outline Specifications
Package 30248
(45° X 2.72
[.107])
C
L
2X 4.83±0.51
[.190±.020]
D
9.78
[.385]
19.43 ±0.51
[.765±.020]
S
LID 9.40 +0.10
-0.15 C
L
+.004
[.370 -.006 ]
G
2X 12.70
[.500]
2X R1.63
[.064]
4X R1.52
[.060]
27.94
[1.100]
1.02
[.040]
19.81±0.20
[.780±.008]
SPH 1.57
[.062]
3.76±0.38
[.142±.015]
0.0381 [.0015]
-A-
34.04
[1.340]
0.51
[.020]
P K G _248_0
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
8
2004-04-05
PTF080901
Package Outline Specifications
Package 31248
( 45° X 2.72
[.107])
C
L
4.83±0.51
[.190±.020]
9.78
[.385]
D
LID 9.40+0.10
-0.15
[.370+.004
-.006]
CL
19.43±0.51
[.765±.020]
G
2X 12.70
[.500]
19.81±0.20
[.780±.008]
SPH 1.58
[.062]
0.51
[.020]
1.02
[.040]
0.0381 [.0015] -A-
S
20.57
[.810]
3.61±0.38
[.142±.015]
P K G _248_1
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9
2004-04-05
PTF080901
Confidential - Limited Internal
Revision History:
2004-04-05
Previous Version:
2004-01-02, Data Sheet
Page
Subjects (major changes since last revision)
1,8,9
6,7
Data Sheet
Add information about PTF080901F, new package outline diagrams
Circuit information updated.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2004-04-05
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
10