February 2007
AS6C1008
®
128K X 8 BIT LOW POWER CMOS SRAM
FEATURES
GENERAL DESCRIPTION
Access time :55ns
Low powe r consumption:
Operating current:10 mA (TYP.)
Standby current: 1 µA (TYP.)
Single 2.7V ~ 5.5V po we r supply
Fully Compatible with all Competitors 5V product
Fully Compatible with all Competitors 3.3V product
Fully s tatic operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
All products are ROHS Compliant
Package : 32-pin 450 mil SOP
32-pin 600 mil P-DIP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm sTSOP
36-ball 6mm x 8mm TFBGA
PIN DESCRIPTION
Vcc
Vss
DECODER
DQ0-DQ7
I/O DATA
CIRCUIT
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
02/February/07, v 1.0
The AS6C1008 is well designed for very low power
system applications, a nd particula rly well suited for
battery back-u p non-volatile memory a pplication.
The AS6C1008 operates from a single power supply
of 2.7V ~ 5.5V.
.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
The AS6C1008 is a 1,048,576 -bit low powe r
CMOS static random access me mory organized as
131,072 words by 8 bits . It is fabricated using ve ry
high performance, high reliability CMOS technolo gy. Its
sta ndby current is stable within the ra nge of
operating temperature.
128Kx8
MEMORY ARRAY
SYMBOL
DESCRIPTION
A0 - A16
Addres s Inputs
DQ0 – DQ7
Da ta Inputs /Outputs
CE#, CE2
Chip Enable Inputs
WE#
Write Enable Input
OE#
Output Enable Input
VCC
Pow er Supply
V SS
G round
NC
No C onnection
COLUMN I/O
Alliance Memory Inc.
Page 1 of 14
®
February 2007
AS6C1008
128K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
Vcc
1
32
A16
2
31
A15
A14
3
30
CE2
A12
4
29
WE#
A7
5
28
A13
A6
6
27
A8
A5
7
A4
8
A3
9
A2
10
A1
11
A0
AS6C1008
NC
26
A9
25
A11
24
OE#
23
A10
22
CE#
12
21
DQ7
DQ0
13
20
DQ6
DQ1
14
19
DQ5
DQ2
15
18
DQ4
Vss
16
17
DQ3
A1 1
A9
A8
A1 3
WE #
CE 2
A1 5
Vc c
NC
A1 6
A1 4
A1 2
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
AS6C1008
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE #
A10
CE #
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
DQ0
A0
A1
A2
A3
T S OP -I/sTSOP
SOP/P-DIP
A
A0
A1
CE2
A3
A6
A8
B
DQ4
A2
WE#
A4
A7
DQ0
C
DQ5
NC
A5
D
Vss
Vcc
E
Vcc
Vss
F
DQ6
NC
DQ2
G
DQ7 OE# CE# A16
A15 DQ3
H
NC
A9
A10
1
2
A11
A12
3
4
TFBGA
DQ1
A13
A14
5
6
.
02/February/07, v 1.0
Alliance Memory Inc.
Page 2 of 14
February 2007
AS6C1008
®
128K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Terminal Voltage with Respect to VSS
SYMBOL
VTERM
Operating Temperature
RATING
-0.5 to 7.0
0 to 70(C grade)
UNIT
V
TA
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
ºC
-40 to 85(I grade)
-65 to 150
1
50
260
TSTG
PD
IOUT
TSOLDER
ºC
W
mA
ºC
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
L
L
L
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
SUPPLY CURRENT
ISB1
ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
I/O OPERATION
High-Z
High-Z
High-Z
DOUT
DIN
H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
PARAMETER
Supply Voltage
VCC
2.7
*1
Input High Voltage
VIH
0.7*Vcc
*2
Input Low Voltage
VIL
- 0.2
VCC ≧ VIN ≧ VSS
Input Leakage Current
ILI
-1
VCC ≧ VOUT ≧ VSS,
Output Leakage
-1
ILO
Output Disabled
Current
Output High Voltage
VOH IOH = -1mA
2.2
Output Low Voltage
VOL IOL = 2mA
Cycle time = Min.
CE# = VIL and CE2 = VIH, - 55
ICC
II/O = 0mA
Average Operating
Cycle time = 1µs
Power supply Current
CE#≦0.2V and CE2≧VCC-0.2V,
ICC1
II/O = 0mA
other pins at 0.2V or VCC-0.2V
CE# ≧VCC-0.2V
C*
Standby Power
ISB1
Supply Current
or CE2≦0.2V
I*
-
TYP.
3.0
-
*4
MAX.
5.5
VCC+0.3
0.6
1
UNIT
V
V
V
µA
-
1
µA
2.7
-
0.4
V
V
10
60
mA
1
10
mA
1
1
20
50
µA
µA
*C=Commercial temperature/I= Industrial temperature
02/February/07, v 1.0
Alliance Memory Inc.
Page 3 of 14
February 2007
AS6C1008
®
128K X 8 BIT LOW POWER CMOS SRAM
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V CC = VCC(TYP.) and TA = 25ºC
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL =30pF + 1TTL, IOH/IOL = -1mA/2mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
AS6C1008-55
MIN.
MAX.
55
55
55
30
10
5
20
20
10
-
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
SYM.
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
tOW*
tWHZ*
AS6C1008-55
MIN.
MAX.
55
50
50
0
45
0
25
0
5
20
*These parameters are guaranteed by device characterization, but not production tested.
02/February/07, v 1.0
Alliance Memory Inc.
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Page 4 of 14
February 2007
AS6C1008
®
128K X 8 BIT LOW POWER CMOS SRAM
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
CE2
OE#
tCLZ
Dout
High-Z
tOLZ
tOE
tOH
tOHZ
tCHZ
Data Valid
High-Z
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low., CE2 = high.
3.Address must be valid prior to or coincident with CE# = low , CE2 = high; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, t CHZ is less than tCLZ , tOHZ is less than tOLZ.
02/February/07, v 1.0
Alliance Memory Inc.
Page 5 of 14
February 2007
AS6C1008
®
128K X 8 BIT LOW POWER CMOS SRAM
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
tWC
Address
tAW
CE#
tCW
CE2
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
(4)
tDH
Data Valid
Din
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6)
tWC
Address
tAW
CE#
tAS
tWR
tCW
CE2
tWP
WE#
tWHZ
Dout
(4)
High-Z
tDW
Din
tDH
Data Valid
Notes :
1.WE#, CE# must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE#, high CE2, low WE#.
3.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high
impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
02/February/07, v 1.0
Alliance Memory Inc.
Page 6 of 14
February 2007
AS6C1008
®
128K X 8 BIT LOW POWER CMOS SRAM
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
VCC for Data Retention
VDR
Data Retention Current
IDR
TEST CONDITION
CE# ≧ VCC - 0.2V
or CE2 ≦ 0.2V
VCC = 1.5V
CE# ≧ VCC - 0.2V
or CE2 ≦ 0.2V
C**
MIN.
TYP.
MAX.
UNIT
1.5
-
5.5
V
-
0.5
12
µA
0
30
µA
I**
See Data Retention
Chip Disable to Data
tCDR
Waveforms (below)
Retention Time
Recovery Time
tR
tRC* = Read Cycle Time C=Commercial temp/I = Industrial temp**
0
-
-
ns
tRC*
-
-
ns
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) (CE# controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
VIH
CE#
tR
CE# ≧ Vcc-0.2V
VIH
Low Vcc Data Retention Waveform (2) (CE2 controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE2
02/February/07, v 1.0
tR
CE2 ≦ 0.2V
VIL
VIL
Alliance Memory Inc.
Page 7 of 14
February 2007
AS6C1008
®
128K X 8 BIT LOW POWER CMOS SRAM
PACKAGE OUTLINE DIMENSION
32 pin 450 mil SOP Package Outline Dimension
SYM.
A
A1
A2
b
c
D
E
E1
e
L
L1
S
y
Θ
02/February/07, v 1.0
UNIT
INCH.(BASE)
MM(REF)
0.118 (MAX)
0.004(MIN)
0.111(MAX)
0.016(TYP)
0.008(TYP)
0.817(MAX)
0.445 ±0.005
0.555 ±0.012
0.050(TYP)
0.0347 ±0.008
0.055 ±0.008
0.026(MAX)
0.004(MAX)
o
o
0 -10
2.997 (MAX)
0.102(MIN)
2.82(MAX)
0.406(TYP)
0.203(TYP)
20.75(MAX)
11.303 ±0.127
14.097 ±0.305
1.270(TYP)
0.881 ±0.203
1.397 ±0.203
0.660 (MAX)
0.101(MAX)
o
o
0 -10
Alliance Memory Inc.
Page 8 of 14
February 2007
AS6C1008
®
128K X 8 BIT LOW POWER CMOS SRAM
32 pin 600 mil P-DIP Package Outline Dimension
SYM.
A1
A2
B
D
E
E1
e
eB
L
S
Q1
UNIT
INCH(BASE)
MM(REF)
0.001 (MIN)
0.150 ± 0.005
0.018 ± 0.005
1.650 ± 0.005
0.600 ± 0.010
0.544 ± 0.004
0.100 (TYP)
0.640 ± 0.020
0.130 ± 0.010
0.075 ± 0.010
0.070 ± 0.005
0.254 (MIN)
3.810 ± 0.127
0.457 ± 0.127
41.910 ± 0.127
15.240 ± 0.254
13.818 ± 0.102
2.540 (TYP)
16.256 ± 0.508.
3.302 ± 0.254
1.905 ± 0.254
1.778 ± 0.127
Note : D/E1/S dimension do not include mold flash.
02/February/07, v 1.0
Alliance Memory Inc.
Page 9 of 14
February 2007
AS6C1008
®
128K X 8 BIT LOW POWER CMOS SRAM
32 pin 8mm x 20mm TSOP-I Package Outline Dimension
UNIT
SYM.
A
A1
A2
b
c
D
E
e
HD
L
L1
y
Θ
02/February/07, v 1.0
INCH(BASE)
MM(REF)
0.047 (MAX)
0.004 ±0.002
0.039 ±0.002
0.008 + 0.002
- 0.001
0.005 (TYP)
0.724 ±0.004
0.315 ±0.004
0.020 (TYP)
0.787 ±0.008
0.0197 ±0.004
0.0315 ±0.004
0.003 (MAX)
o
o
0 ～5
1.20 (MAX)
0.10 ±0.05
1.00 ±0.05
0.20 + 0.05
-0.03
0.127 (TYP)
18.40 ±0.10
8.00 ±0.10
0.50 (TYP)
20.00 ±0.20
0.50 ±0.10
0.08 ±0.10
0.076 (MAX)
o
o
0 ～5
Alliance Memory Inc.
Page 10 of 14
February 2007
AS6C1008
®
128K X 8 BIT LOW POWER CMOS SRAM
32 pin 8mm x 13.4mm sTSOP Package Outline Dimension
HD
cL
12° (2x)
32
16
17
12° (2x)
b
E
e
1
"A"
Seating Plane
D
y
12° (2X)
16
17
0.254
A2
c
A
GAUGE PLANE
A1
0
SEATING PLANE
"A" DETAIL VIEW
1
L1
32
SYM.
UNIT
A
A1
A2
b
c
D
E
e
HD
L
L1
y
Θ
02/February/07, v 1.0
L
12° (2X)
INCH(BASE)
MM(REF)
0.049 (MAX)
0.005 ±0.002
0.039 ±0.002
0.008 ±0.01
0.005 (TYP)
0.465 ±0.004
0.315 ±0.004
0.020 (TYP)
0.528±0.008
0.0197 ±0.004
0.0315 ±0.004
0.003 (MAX)
o
o
0 ～5
1.25 (MAX)
0.130 ±0.05
1.00 ±0.05
0.20±0.025
0.127 (TYP)
11.80 ±0.10
8.00 ±0.10
0.50 (TYP)
13.40 ±0.20.
0.50 ±0.10
0.8 ±0.10
0.076 (MAX)
o
o
0 ～5
Alliance Memory Inc.
Page 11 of 14
February 2007
AS6C1008
128K X 8 BIT LOW POWER CMOS SRAM
36 ball 6mm × 8mm TFBGA Package Outline Dimension
02/February/07, v 1.0
Alliance Memory Inc.
Page 12 of 14
February 2007
AS6C1008
128K X 8 BIT LOW POWER CMOS SRAM
®
®
Alliance Memory, Inc.
1116 South Amphlett, #2,
San Mateo, CA 94402
Tel: 650-525-3737
Fax: 650-525-0449
Copyright © Alliance Memory
All Rights Reserved
Part Number: AS6C1008
Document Version: v. 1.0
www.alliancememory.com
© Copyright 2003 Alliance Memory, Inc. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of
Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this
document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data
contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any
time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in
this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide,
any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any
product described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or
warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in
Alliance's Terms and Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance's
Terms and Conditions of Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights; mask works rights,
trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in
life-supporting systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of
Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all
claims arising from such use.
02/February/07, v 1.0
Alliance Memory Inc.
Page 14 of 14