EFC4615R
Ordering number : ENA1629
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
EFC4615R
General-Purpose Switching Device
Applications
Features
•
•
•
2.5V drive
Best suited for LiB charging and discharging switch
Common-drain type
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Source-to-Source Voltage
Conditions
Ratings
VSSS
VGSS
Gate-to-Source Voltage
Source Current (DC)
IS
ISP
Source Current (Pulse)
Total Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
Unit
24
V
±12
V
6
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (5000mm2×0.8mm)
1.6
W
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7067-001
• Package
: EFCP
• JEITA, JEDEC
:• Minimum Packing Quantity : 5,000 pcs./reel
1.46
3
Taping Type : TR
Marking
1.46
4
FQ
TR
LOT No.
2
0.22
1
Electrical Connection
0.37
0.15
1
0.65
Rg
0.65
2
1
2
4
3
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
0.3
Rg
3
SANYO : EFCP1515-4CC-037
Rg=200Ω
4
http://semicon.sanyo.com/en/network
62310PF TK IM TC-00002379 No. A1629-1/5
EFC4615R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Source-to-Source Breakdown Voltage
V(BR)SSS
Zero-Gate Voltage Source Current
ISSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
Forward Transfer Admittance
Ratings
Conditions
min
typ
Unit
max
24
Test Circuit 1
VGS(off)
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
Test Circuit 3
| yfs |
VSS=10V, IS=3A
Test Circuit 4
RSS(on)1
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
Test Circuit 5
19
27
31
mΩ
RSS(on)2
Test Circuit 5
21
28
33
mΩ
RSS(on)3
IS=3A, VGS=3.1V
Test Circuit 5
24
33
44
mΩ
RSS(on)4
IS=3A, VGS=2.5V
Test Circuit 5
28
39
52
mΩ
Turn-ON Delay Time
td(on)
See specified Test Circuit.
Test Circuit 7
13
ns
Rise Time
tr
See specified Test Circuit.
Test Circuit 7
235
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
Test Circuit 7
335
ns
Fall Time
tf
See specified Test Circuit.
Test Circuit 7
360
ns
Total Gate Charge
Qg
VSS=10V, VGS=4.5V, IS=6A
8.8
nC
Forward Source-to-Source Voltage
VF(S-S)
IS=6A, VGS=0V
Static Source-to-Source On-State Resistance
Test Circuit 1
V
IS=1mA, VGS=0V
VSS=20V, VGS=0V
Test Circuit 2
0.5
1
μA
±10
μA
1.3
5.4
1
Test Circuit 6
V
S
1.2
V
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
Test Circuit 2
IGSS(+) / (--)
S2
S2
G2
G2
G1
G1
S1
S1
IT11565
Test Circuit 3
VGS(off)
IT11566
Test Circuit 4
| yfs |
S2
S2
G2
G2
10V 1mA
G1
G1
S1
S1
IT11567
IT11568
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
No. A1629-2/5
EFC4615R
Test Circuit 5
RSS(on)
Test Circuit 6
VF(S-S)
S2
S2
4.5V
G2
G2
G1
G1
S1
S1
IT11569
IT11570
Test Circuit 8
Qg
Test Circuit 7
td(on), tr, td(off), tf
VDD=10V
S2
IS=3A
RL=3.33Ω
V
S2 OUT
VIN
G2
G2
G1
PW=10μs
D.C.≤1%
G1
S1
S1
IT11571
IS -- VGS
5.0
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
VSS=10V
4.5
3.5
3.0
2.5
2.0
25°C
1.0
--25°C
Ta=
75°C
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Gate-to-Source Voltage, VGS -- V
RSS(on) -- Ta
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
70
=4.
VGS
3A
, I S=
2.5V
=3A
=
V, I S
VGS
=3.1
S
VG
A
, I S=3
=4.5V
S
VG
30
20
10
0
--60
--40 --20
0
20
40
60
80
50
40
30
20
0
2
4
100
Ambient Temperature, Ta -- °C
120
140
160
IT15255
6
8
10
Gate-to-Source Voltage, VGS -- V
IT15253
3A
I =
0V, S
40
60
IT15254
| yfs | -- IS
10
60
50
Ta=25°C
IS=3A
70
10
1.6
Forward Transfer Admittance, | yfs | -- S
Source Current, IS -- A
4.0
1.5
IT15409
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
RSS(on) -- VGS
80
VSS=10V
7
5
Ta=
3
°C
--25
C
75°
25
2
°C
1.0
7
0.1
2
3
5
7
1.0
2
Source Current, IS -- A
3
5
7
10
IT15256
No. A1629-3/5
EFC4615R
IS -- VF(S-S)
Switching Time, SW Time -- ns
0.1
7
5
3
2
0.01
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
VGS -- Qg
td(off)
3
tf
2
100
tr
7
5
3
2
td(on)
7
0.01
1.2
3.0
2.5
2.0
1.5
1.0
0.5
1
2
3
4
5
6
7
8
Total Gate Charge, Qg -- nC
PT -- Ta
1.8
5 7 0.1
9
10
IT15260
2
3
5 7 1.0
2
3
5 7 10
100
7
5
3
2
10
7
5
3
2
ISP=60A (PW≤10μs)
10
0μ
1m
s
s
IS=6A
10
ms
10
DC
1.0
7
5
3
2
0.1
7
5
3
2
IT15258
ASO
2
3.5
0
3
Source Current, IS -- A
VSS=10V
IS=6A
4.0
2
IT15257
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
4.5
0m
s
op
era
Operation in this area
is limited by RSS(on).
tio
n
Ta=25°C
Single pulse
When mounted on ceramic substrate (5000mm2×0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Source-to-Source Voltage, VSS -- V
2 3
5
IT15534
When mounted on ceramic substrate
(5000mm2×0.8mm)
1.6
Total Dissipation, PT -- W
5
10
Forward Source-to-Source Voltage, VF(S-S) -- V
0
VSS=10V
VGS=4.5V
7
1.0
7
5
3
2
0.001
SW Time -- IS
1000
VGS=0V
Ta=7
5°C
25°C
--25°C
Source Current, IS -- A
10
7
5
3
2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15535
No. A1629-4/5
EFC4615R
Note on usage : Since the EFC4615R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of June, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1629-5/5