CALIFORNIA INSTITUTE OF TECHNOLOGY PHYSICS MATHEMATICS AND ASTRONOMY DIVISION Sophomore Physics Laboratory (PH005/105) Analog Electronics Final Project, Some Useful Circuits c CopyrightVirgínio de Oliveira Sannibale, 2003 (Revision December 2012) Chapter 9 Final Project, Some Useful Circuits This appendix is a collection of practical consideration, suggestions, and useful simple circuits to be used with transducers that can help you building your final project. 9.1 Solderless Breadboard The figure below shows the circuit breadboard contacts topology and suggested power supply connections. W X A B C D E TRENCH 10 15 20 25 30 35 40 45 50 F G H I J Z Y 60 −15V GND +15V DR IC 55 AF T 5 Here some rules and guidance to follow when assembling a circuit using a solderless breadboard 177 178 CHAPTER 9. FINAL PROJECT, SOME USEFUL CIRCUITS • Wires gauge AWG 24 must be used. • Do not force thick leads into the board holes connections. Leads fit must be somehow loose to allow the spring loaded contact to work properly. • Green jacket wires should be used to connect components to ground (GND), red jacket wires for +15 V, and black jacket wires for −15 V. A different color should be used for feedback connections. • Component’s leads should be cut short to place the components as close as possible to the board. • ICs must be placed on and along the trench otherwise opposite on side IC’s pins will be short circuited. • Always double check power supply connections to avoid damaging or more likely destroying ICs components. This type of pragmatism will minimize the number of surprises you will have building your circuit and also will help you debug your circuit. 9.2 Decoupling/Bypassing Capacitor Decoupling or bypassing capacitors are capacitor placed between the ICs power supply inputs and ground to filter out (decouple) noise coming from the power supply lines. We can somehow distinguish two type of noise: AF T • transient noise due to fluctuation of the voltages generated by sudden increase of current demanded by the ICs, • broad band or high frequency noise either random or constant with a given frequency spectrum. DR Large capacitors acting as a current reservoir are needed to compensate for voltage transients, and small capacitor are required for high frequency noise filtering. A typical value for high frequency noise decoupling capacitors is 100 nF. These capacitors should be placed very close to the ICs power supply inputs to avoid the inductive effects of long electric connections. The faster 9.3. VARIABLE RESISTORS 179 the IC circuitry is the more important the decoupling becomes especially for high frequency noise. For transient noise, much larger capacitor with values, between 1 µF to 10 µF, are necessary to provide some kind of "current reservoir". Apart from special cases, they can be placed somewhere in the circuit board. Usually, decent off the shelf power supplies already include those capacitors. A very extensive source of information about decoupling capacitor is found in the bibliography. 9.3 Variable Resistors It is good practice to place potentiometer to set amplifier gains, match resistor pairs, or in circuits to null voltage offset or set the proper voltage divider outputs. Variable resistors come in so many flavors that it is time consuming to choose the right components. For the project purpose, it is convenient to use at least 10 turn trimmers potentiometers with up right wiper screw, which are compact and fit reasonably well onto the solderless breadboard. As shown in the figure below, trimmers should be placed in series with a resistor every time one needs to limit the current to a maximum . The figure also shows where usually the wiper (B) is located. Vi Rx Vo Wiper Wiper DR 9.4 Surface Mount Devices AF T R Due the absence of leads, Surface Mount Devices (SMD) cannot be easily used with solderless prototyping boards. Adapters, which permits to CHAPTER 9. FINAL PROJECT, SOME USEFUL CIRCUITS 180 solder SMDs onto a small printed circuit boards with legs, can be used to properly wire these type components on the solderless board. There is a plethora of SMD standards such as Small Outline Integrated Circuit (SOIC), mini-SOIC, Small Outline Package (SOP), Shrink SOP (SSOP) Thin SSOP (TSSOP), et. cetera. Each standard differs by ICs dimensions (especially the footprint) and distance between leads. Some of them have so small packages that it is practically impossible to solder ICs without expressely made tooling. Soldering SOIC components on PCBs is somehow a quite simple operation once done two or three times. SOIC leads are about 1.3 mm apart and therefore small an narrow solder iron tips allow to solder each lead at a time. Smaller packaging are quite difficult to solder and because of their small size, it is easy to damage the ICs if overheated. Consult the data-sheet before soldering SMDs on adapters to check how long the component can withstand the maximum temperature. SOIC adapters with 8 pin connection are available in the laboratory. 9.5 Switches Switching circuits to drive high power load are shown in the figure below Vcc Load R D0 BJT 1k−3.3kΩ Load R AF T D0 D1 D1 Vcc N−MOSFET 15kΩ DR The diode D0 at the input is necessary in case the switch input can go lower than zero volts. The diode in parallel with the load is necessary if the load is inductive to damp over-currents generated when the load switch status. Typical inductive load are relays whose large inductance values come from the relay’s solenoid. 9.6. VOICE COIL LOUD-SPEAKERS DRIVER 181 9.6 Voice Coil Loud-speakers Driver Voice coil loud-speakers are transducers with a quite low input impedance, usually of 4 Ω or 8 Ω and few to several watts of power consumption. They therefore need quite some current to be properly driven. For our purposes (unless the project is to make a very powerful speaker) a 50 mW to 100 mW speaker for the mid-range acoustic frequencies is more than sufficient. Usually, because Op-Amps can provide no more than few milliamperes, they cannot drive a speaker directly. A current booster such as the pushpull amplifier with BJTs able to dissipate about 0.5 W, which can increase the current by a factor 10 to 100 easily, can drive a small speaker in the mid-range acoustic frequencies. It is fundamental to limit the current to ensure that the transistor power rating are not exceeded. The circuit below includes the resistor necessary to limit the current flowing through the BJTs which needs to be calculated based on the power supply voltage VCC and the rms dissipation Prms the transistors can sustain. Resistors R power dissipation must be also computed . Vcc vi R R0 R1 v+ Q1 − G vo vA + Q1 R RL DR −Vcc AF T v− Heat-sinks should be placed on the BJTs to ensure that the amplifier works reliably. 182 CHAPTER 9. FINAL PROJECT, SOME USEFUL CIRCUITS 9.6.1 Off the shelf Audio Amplifiers ICs power audio amplifier suitable to power small speakers (~1 Wspeakers) are for example the LM380 and the LM386. Heat sink should be used with those off the shelf audio anplifiers. 9.7 Microphones A simple condenser (capacitor) microphone can be used as a transducer to convert audio waves into a current. A condenser microphone exploits the change in capacitance caused by sound waves modulating the distance of the capacitor plates. This change corresponds to a charge variation of the capacitor which generates a current proportional to the sound wave intensity. A voltage bias is required to charge the capacitor otherwise there would not be a capacitance to be modulated by the sound waves. Usually one capacitorŽs plate is a stiff conductor and the other is a light small conducting membrane under tension which can absorb the sound wave energy and vibrate. Electret microphones are condenser microphones with a so called electret material as dielectric which has an intrinsic electric field analogously to permanent magnet and its magnetic field. The electric field generates a capacitance without the need of a bias voltage as in a conventional condenser microphone. A n-channel JFET connected as show in the figure below "hide" the capacitive load of the electret microphone. VDD R + AF T VDD R Vo Vo + Mic. Q0 Mic. − + − C DR V0 − 9.7. MICROPHONES 183 The following basic preamplifier circuit can be used to amplify the weak microphone signal to further conditioning. Cf 15 V VCC 100pF Rf R1 Mic. AOM−4544P−2 + 6.8kΩ C 100kΩ + − − G 10µ F + R2 3.3kΩ H ( jω ) = − R f jωRC 1 , R 1 + jωRC 1 + jωR f C f R= AF T The voltage divider resistors R1 and R2 set the positive bias voltage for the condenser microphone to the required level specified by the transducer characteristics. It also sets the maximum current that the transducer will drain. The capacitor C bypass the DC component which is too large to be amplified. The capacitor value should be such that the high pass cutoff frequency is about 20 Hz. Electrolytic capacitor can be used because of the microphone positive bias and therefore even large values such as 10 µF can be easily used. The capacitor C f adds a pole at high frequency to filter out high frequency oscillations and noise. The low-pass cut-off frequency should be at about 15 kHz. Between the poles, the inverting amplifier gain is set as usual by the ratio R f /R and should probably be quite large, between 50 to 100 depending on the microphone used. The amplifier transfer function is R1 R2 . R1 + R2 • Part #: AOM-4544P-2-R • Directivity: Omnidirectional DR The electret condenser microphone available in the lab has following characteristics 184 CHAPTER 9. FINAL PROJECT, SOME USEFUL CIRCUITS • Sensitivity: -44dB • Frequency Response: from 20 Hz to 20 kHz, • Max supply voltage Max: 10 V • Max drain current : 500 µA • Impedance: R (source impedance of microphone and bias, see schematic) • Pin-out: (+) (−) 9.8 Phototransistors AF T It is worthwhile to notice that a speaker can be used as a microphone as well. In fact, vibrations induced by the sound waves on the speaker membrane will move the solenoid respect to the permanent magnet. The relative velocity between solenoid and magnet will induce a current in the solenoid proportional to the sound wave intensity. Dynamic microphones have essentially the same topology of a speaker and do not require a bias voltage as condenser microphones do. DR A common type of phototransistor is the photo-BJT whose base region is enlarged compared to standard BJT and has the base exposed such that light can be absorbed to generate a photocurrent. Photo-BJTs can either have two leads , Collector and Emitter leads or all the three BJT leads. The circuit below is the simplest configuration that can be used to have a photo-BJT working as switch or an amplifier driven by a light source. The operation mode depends on the value of the load R L that sets the current ICC . For the circuit to work as a switch or as an amplifier, we need 9.9. PHOTODIODES 185 to either keep the transistor working on the saturated or the active mode when light is impinging on the transistor, and therefore VCC = R L IC Switch ⇒ (max ) ⇒ VCC > R L IC Amplifier VCC RC Vo RL Usually, because of their faster response and lower noise, photodiodes work better as transducer to convert light power into voltage. With modulated light, photodiodes should be therefore preferred. 9.9 Photodiodes Rs A Io ID Vo Iph VD D A Io Cj Rp DR Pi K AF T Photodiodes are essentially semiconductor junctions which generate a current (photocurrent) when exposed to light. They are therefore used to measure light intensity. The equivalent photodiode circuit is show below. Vo K 186 CHAPTER 9. FINAL PROJECT, SOME USEFUL CIRCUITS Note the opposite direction of the photocurrent I ph and the forward biased diode current ID . • I ph : photocurrent proportional to the amount of incident light of power P on the photodiode active surface, i.e. I ph = −α (λ) P , where α depends on the light wavelength λ. • ID : diode PN junction current − qVD /K B T ID = Is e −1 . The saturation current is usually called dark current, i.e. current with no incident light. • R p : shunt resistance (in parallel.) • Rs : series resistance. • Cj : capacitance due to the PN junction. The smaller the N doped active region surface, the smaller is the capacitance. The I-V characteristic of the photodiode for different values of incident power is qualitatively shown in the figure below. Note how the input dynamic range where the response is linear increases when the photodiode is reverse biased. 0 AF T ID VD Pi 2P i 3P i Vo DR Vo 9.9. PHOTODIODES 187 Fast and low noise photodiodes are hard to build and it is even harder in case of high power application. Ultra fast photodiodes can have an active area of about less than 100 µm2 and bandwidth of 25 GHz. Typical semiconductor substrate for visible light are Silicon (Si) and for infrared light Indium-Gallium-Arsenide (InGaAs). 9.9.1 Photovoltaic Mode In this mode, the photodiode works thanks to the photovoltaic effect. Some of the electron-hole pairs generated by incident photons do not give up their energy as in a metal or are complectely extracted from the solid in the photoelectric effect. They just stay inside the semiconductor with energy in the conduction band of the semiconductor. These pairs then build up generating a charge distribution and therefore an electric field that finally produces the photocurrent. As shown in the figure below, the photocurrent is measured as a voltage drop across a load or is transformed into a voltage with a transimpedance amplifier. Rf Vo − D + Major advantages of this configuration: • Smaller dark current ⇒ low current noise. • linear output because smaller dark current. • accurate voltage response. Major disadvantage: Vo AF T R >> R p DR • slow response. The Cj in parallel to the current generator low pass filter the signal. 188 CHAPTER 9. FINAL PROJECT, SOME USEFUL CIRCUITS 9.9.2 Photocurrent Mode In this mode, the generated photocurrent is collected by the revers bias voltage applied across the photodiode. As shown in the figure below, apart from having the photodiode reverse biased with −VDD the circuits are the same as the photovoltaic mode circuits. Cf −VDD Rf Vo − R D + −VDD Major advantages of this configuration: • Fast response. The reverse voltage bias −VDD reduces the junction depletion region and therefore the junction capacitance. Major disadvantages: • larger dark current than the unbiased photodiode. Consult [3, 4] for more detailed information. 9.10 Ultrasonic Transceivers TBD DR 9.11 Velocity Sensors AF T • small OpAmp current bias amplified by the transimpedance. TBD 9.12. POSITION SENSORS 189 9.12 Position Sensors DR AF T TBD AF T CHAPTER 9. FINAL PROJECT, SOME USEFUL CIRCUITS DR 190 Bibliography [1] Semiconductor Packaging Information by Type, Texas Instruments, http://www.ti.com/sc/docs/psheets/type/type.html [2] Decoupling Techniques, MT-101 Tutorial, Analog Devices, www.analog.com/static/imported-files/tutorials/MT-101.pdf [3] Photodiode Technical Information - Hamamatsu Photonics, http://sales.hamamatsu.com/assets/applications/SSD/photodiode_technical_information.pd 191 DR AF T [4] Characteristics and use of infrared detectors, Hamamatsu Photonics, http://sales.hamamatsu.com/assets/applications/SSD/infrared_kird9001e04.pdf BIBLIOGRAPHY DR AF T 192