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HMC190MS8
MICROWAVE CORPORATION
GaAS MMIC MSOP8 SPDT SWITCH DC - 3 GHz
FEBRUARY 2001
V01.0700
Features
General Description
The HMC190MS8 is a low cost SPDT switch
in an 8-lead MSOP package. The switch
can control signals from DC to 3.0 GHz. It is
especially suited for low and medium power
applications using positive control voltages.
The two control voltages require a minimal
amount of DC current, which is optimal for
battery powered radio systems at 0.9, 1.9,
and 2.4 GHz.
The HMC190MS8 design provides exceptional third order intermodulation performance of +50 dBm. The design has been
optimized for the small MSOP package, and
maintains a VSWR of better than 1.2:1 up to
2 GHz. This device is the positive control
MSOP8 packaged version of our
HMC239S8 negative control device.
LOW INSERTION LOSS: 0.4 dB
ULTRA SMALL PACKAGE: MSOP8
HIGH INPUT IP3 : +50 dBm
POSITIVE CONTROL: 0/+3V @ 10 µA
SWITCHES
7
Guaranteed Performance Vctl = 0/+3 to +8 Vdc, -40 to +85 deg C
Parameter
SMT
SPDT
Inser tion Loss
Isolation
Return Loss
Input Power for 1dB Compression
(Vctl = 0/+5V)
Input Third Order Intercept
(Vctl = 0/+5V, +7 dBm Each Tone)
Switching Characteristics
tRISE / tFALL (10/90% RF / 90/10% RF)
tON / tOFF (50% CTL to 10/90% RF)
12 Elizabeth Drive, Chelmsford, MA 01824
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.5 - 1.0 GHz
0.5 - 3.0 GHz
0.5 - 1.0 GHz
0.5 - 3.0 GHz
DC - 3.0 GHz
Phone: 978-250-3343
Min.
23
23
22
19
24
20
15
10
25
23
45
44
Typ.
0.4
0.4
0.5
0.7
27
27
26
22
28
28
20
16
30
29
50
49
3
10
Fax: 978-250-3373
7 - 46
this material copyrighted by its respective manufacturer
Max.
0.6
0.6
0.8
1.0
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB m
dB m
dB m
dB m
nS
nS
Web Site: www.hittite.com
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HMC190MS8
MICROWAVE CORPORATION
HMC190MS8
MSOP8 SPDT SWITCH DC - 3 GHz
FEBRUARY 2001
V01.0700
Insertion Loss
Isolation
0
0
-10
ISOLATION (dB)
INSERTION LOSS (dB)
-0.5
-1
-1.5
-2
-20
-30
-40
-2.5
-50
-3
0
0.5
1
1.5
2
2.5
0
3
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
FREQUENCY (GHz)
7
SWITCHES
Return Loss
SPDT
-10
-20
-30
SMT
INPUT RETURN LOSS (dB)
0
-40
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 47
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HMC190MS8
MICROWAVE CORPORATION
HMC190MS8 MSOP8 SPDT SWITCH DC - 3 GHz
FEBRUARY 2001
V01.0700
Input 0.1 and 1.0 dB
Compression vs Control Voltage
Input Third Order Intercept
Point vs Control Voltage
55
1 dB at 1900 MHz
1 dB at 900 MHz
INPUT THIRD ORDER
INTERCEPT(dBm)
INPUT POWER FOR 0.1 AND 1 dB
COMPRESSION (dBm)
35
30
25
0.1 dB at 900 MHz
20
900 MHz
53
51
49
1900 MHz
47
0.1 dB at 1900 MHz
45
15
3
4
5
6
7
8
4
9
5
SMT
SPDT
SWITCHES
7
Compression vs Control Voltage
Carrier at 900MHz
Control
Input
6
7
8
9
CONTROL INPUT (Vdc)
CONTROL INPUT (Vdc)
Distortion vs Control Voltage
Carrier at 1900MHz
Control Input
Input Power Input Power Input Power Input Power
for 0.1dB
for 1dB
for 0.1dB
for 1dB
Compression Compression Compression Compression
(Vdc)
(dBm)
(dBm)
(dBm)
(dBm)
+3
17
20
17
20
+5
25
30
24
29
+8
31
33
30
32
Third Order Intercept (dBm)
+7 dBm Each Tone
(Vdc)
900 MHz
1900 MHz
+5
50
49
+8
53
51
Caution: Do not operate in 1dB compression at power
levels above +31 dBm (Vctl=+5 Vdc) and do not 'hot
switch' power levels greater than +20dBm (VCTL = +5Vdc).
DC blocks are required at ports RFC, RF1 and RF2.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
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HMC190MS8
MICROWAVE CORPORATION
HMC190MS8 MSOP8 SPDT SWITCH DC - 3 GHz
FEBRUARY 2001
V01.0700
Truth Table *Control Input Tolerances are +/- 0.2 Vdc
Functional Diagram
GND
RF2
B
Control
Current
Control Input *
PIN 1
GND
RFC
A
(Vdc)
B
(Vdc)
Ia
(uA)
Ib
(uA)
RF to
R F1
RF to
R F2
0
+3
-10
10
On
Off
+3
0
10
-10
Off
On
0
+5
-55
55
On
Off
+5
0
55
-55
Off
On
0
+7
-210
210
On
Off
+7
0
210
-210
Off
On
0
+8
-280
280
On
Off
+8
0
280
-280
Off
On
A
RF1
Absolute Maximum Ratings
Max. Input Power
VCTL = 0/+8V
0.05 GHz
0.5-2 GHz
+27 dBm
+34 dBm
Storage Temperature
-65 to +150 deg. C
Operating Temperature
-40 to +85 deg. C
7
0.116/0.120
(2.95/3.05)
B
GND
RF2
-0.2 to +12Vdc
GND
Control Voltage Range (A & B)
Outline
Signal Path
SWITCHES
GND
LOT NUMBER
SPDT
XXXX
YYWW
DATE CODE
YY= YEAR
WW= WEEK
A
RF1
0.188/0.196
(4.78/4.98)
PIN 1 (REF)
SMT
0.038/0.042
(0.96/1.07)
RFC
PIN 1
HMC
190
GND
0.116/0.120
(2.95/3.05)
0.032/0.036
(0.81/0.91)
0.005/0.007
(0.13/0.18)
0-5 DEG
0.0256 TYP
(0.65)
0.012 TYP
(0.30)
0.021 MIN TYP
(0.53)
1)
2.
3.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
MATERIAL:
A) PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC, SILICA & SILICONE IMPREGNATED
B) LEADFRAME MATERIAL: COPPER ALLOY
PLATING: LEAD-TIN SOLDER PLATE
DIMENSIONS ARE IN INCHES (MILLIMETERS)
Fax: 978-250-3373
Web Site: www.hittite.com
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HMC190MS8
MICROWAVE CORPORATION
HMC190MS8
MSOP8 SPDT SWITCH DC - 3 GHz
FEBRUARY 2001
V01.0700
Typical Application Circuit
RF2
GND
B
Pin 1
A
GND
RFC
RF1
+Vdd
CTL
74HCT04 or
74HC04
Notes:
1.
2.
3.
4.
Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 5 to 8 Volts applied to the CMOS logic gates.
DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.
Highest RF signal power capability is achieved with Vdd = +8V and A/B set to 0/+8V.
SMT
SPDT
SWITCHES
7
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
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Web Site: www.hittite.com
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'9
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!
HMC190MS8
MICROWAVE CORPORATION
HMC190MS8
MSOP8 SPDT SWITCH DC - 3 GHz
FEBRUARY 2001
V01.0700
NOTES:
SMT
SPDT
SWITCHES
7
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 51
this material copyrighted by its respective manufacturer