HMC363
v01.0701
MICROWAVE CORPORATION
GaAs HBT MMIC
DIVIDE-BY-8, DC - 12.0 GHz
3
Typical Applications
Features
Prescaler for DC to X Band PLL Applications:
Ultra Low SSB Phase Noise: -153 dBc/Hz
• Satellite Communication Systems
Wide Bandwidth
• Fiber Optic
Output Power: -6 dBm
• Pt-Pt and Pt-MPt Radios
Single DC Supply: +5V
• VSAT
Small Size: 0.686 mm x 1.448 mm
FREQUENCY GENERATION - CHIP
Functional Diagram
General Description
The HMC363 is a low noise Divide-by-8 Static
Divider with InGaP GaAs HBT technology that
has a small size of 0.686 mm x 1.448 mm. This
device operates from DC (with a square wave
input) to 12 GHz input frequency with a single
+5.0V DC supply. The low additive SSB phase
noise of -153 dBc/Hz at 100 kHz offset helps the
user maintain good system noise performance.
Electrical Specifications, TA = +25° C, 50 Ohm System, Vcc = 5V
Parameter
Conditions
Maximum Input Frequency
Minimum Input Frequency
Input Power Range
Min.
Typ.
12
13
Sine Wave Input. [1]
Max.
GHz
0.2
0.5
GHz
Fin= 1 to 8 GHz
-15
>-20
+10
dBm
Fin= 8 to 10 GHz
-10
>-15
+2
dBm
Fin= 10 to 12 GHz
-5
>-8
0
dBm
Output Power [2]
Fin= 12 GHz
-9
-6
dBm
Reverse Leakage
Both RF Outputs Terminated
60
dB
Pin= 0 dBm, Fin= 6 GHz
-153
dBc/Hz
Pin= 0 dBm, Fout= 882 MHz
100
ps
70
mA
SSB Phase Noise (100 kHz offset)
Output Transition Time
Supply Current (Icc) [2]
1. Divider will operate down to DC for square-wave input signal.
2. When operated in low power mode (pin 10 floating).
3 - 40
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
HMC363
v01.0701
MICROWAVE CORPORATION
GaAs HBT MMIC
DIVIDE-BY-8, DC - 12.0 GHz
20
20
10
10
0
INPUT POWER (dBm)
Recommended
Operating Window
-10
-20
0
Min Pin +25 C
Max Pin +25 C
Min Pin +85 C
Max Pin +85 C
Min Pin -55 C
Max Pin -55 C
-10
-20
-30
-30
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
0
1
2
3
4
INPUT FREQUENCY (GHz)
6
7
8
9
10 11 12 13 14 15
SSB Phase Noise
Performance, Pin= 0 dBm, T= 25 °C
0
0
+25 C
+85 C
-2
-55 C
-3
-4
-5
-6
-7
-8
-20
SSB PHASE NOISE (dBc/Hz)
-1
OUTPUT POWER (dBm)
5
INPUT FREQUENCY (GHz)
Output Power vs. Temperature
-9
-10
0
1
2
3
4
5
6
7
8
9
-40
-60
-80
-100
-120
-140
-160
2
10
10 11 12 13 14 15
10
INPUT FREQUENCY (GHz)
0
10
4
10
5
10
6
10
7
Reverse Leakage, Pin= 0 dBm, T= 25 °C
0
Pfeedthru
2nd Harmonic
3rd Harmonic
-20
-30
-40
-50
Both Output Ports Terminated
One Output Port Terminated
-10
POWER LEVEL (dBm)
-10
3
OFFSET FREQUENCY (Hz)
Output Harmonic
Content, Pin= 0 dBm, T= 25 °C
OUTPUT LEVEL (dBm)
3
FREQUENCY GENERATION - CHIP
INPUT POWER (dBm)
MMIC
SUB-HARMONICALLY
PUMPED
MIXER
- 25 GHz
InputGaAs
Sensitivity
Window,
T= 25 °C
Input
Sensitivity
Window17
vs. Temperature
-20
-30
-40
-50
-60
-60
-70
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
INPUT FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
INPUT FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
3 - 41
HMC363
v01.0701
MICROWAVE CORPORATION
GaAs HBT MMIC
DIVIDE-BY-8, DC - 12.0 GHz
3
AMPLITUDE (mV)
Output Voltage Waveform,
Pin= 0 dBm, Fout= 882 MHz, T= 25 °C
300
RF Input (Vcc = +5V)
+13 dBm
200
Vcc
+5.5V
100
VLogic
Vcc -1.6V to Vcc -1.2V
Storage Temperature
-65 to +150 deg C
Operating Temperature
-55 to +85 deg C
0
-100
Typical Supply Current vs. Vcc
-200
FREQUENCY GENERATION - CHIP
Absolute Maximum Ratings
-300
22.7 22.9 23.1 23.3 23.5 23.7 23.9 24.1 24.3 24.5 24.7
TIME (nS)
Vcc (V)
Icc (mA)
4.75
64
5.0
70
5.25
75
Note: Divider will operate over full voltage range shown above
Pad Locations & Outline Drawing
ALL DIMENSIONS IN INCHES (MILLIMETERS)
ALL TOLERANCES ARE ±0.001 (0.025)
DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
BOND PADS ARE 0.004 (0.100) SQUARE
BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
BACKSIDE METALLIZATION: GOLD
BOND PAD METALLIZATION: GOLD
3 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
HMC363
v01.0701
MICROWAVE CORPORATION
GaAs HBT MMIC
DIVIDE-BY-8, DC - 12.0 GHz
Pad Description
Function
Description
1
IN
RF input 180° out of phase with pad 3 for differential operation. AC
ground for single ended operation.
2, 4, 5, 6
VCC
Supply Voltage 5V ±0.25V can be applied to pad 2, 4, 5, or 6.
3
IN
RF input must be DC blocked.
7, 11, 12
GND
Ground: These pads are grounded.
8
OUT
Divided Output
9
OUT
Divided output 180° out of phase with pad 8.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
3
FREQUENCY GENERATION - CHIP
Pad Number
3 - 43
HMC363
v01.0701
MICROWAVE CORPORATION
GaAs HBT MMIC
DIVIDE-BY-8, DC - 12.0 GHz
Pad Description (continued)
FREQUENCY GENERATION - CHIP
3
Pad Number
Function
Description
10
PWR SEL
In the low power mode, the power select pin is left floating.
By grounding this pin, the output power is increased by
approximately 6 dB.
13
PWR DWN
14
DISABLE
Interface Schematic
The power down pin is grounded for normal operation.
Applying 5 volts to this pin will power down this device.
The disable pin is grounded for normal operation.
Applying 5 volts to this pin will disable the input buffer amplifier.
Truth Table
Function
Pi n
5V
GND
Float
DISABLE
14
Output Off
Output On
X
PWR
DWN
13
Power
Down
Power Up
X
PWR
SEL
10
X
High
Power Output
Low
Power Output
X = State not permitted.
3 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
HMC363
v01.0701
MICROWAVE CORPORATION
GaAs HBT MMIC
DIVIDE-BY-8, DC - 12.0 GHz
Assembly Diagrams
To +5V VCC Supply
(Bypassed via 10 uF Capacitor).
AC coupling capacitors.
AC coupling capacitors.
Optional AC coupled
differential input. Should
be AC grounded for single
ended operation.
This port should be grounded
for normal operation. Applying
+5V to this port will disable the
input buffer amplifier.
Optional AC coupled
differential output. For best
single ended reverse leakage
performance, this port should
be terminated into 50 ohm.
This port should be grounded
for normal operation. Applying
+5V to this port will power
down the device.
For high power output, this
port should be bonded to
ground. For low power output,
this port should be floating.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
FREQUENCY GENERATION - CHIP
3
3 - 45
HMC363
v01.0701
MICROWAVE CORPORATION
GaAs HBT MMIC
DIVIDE-BY-8, DC - 12.0 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
3
Static Sensitivity:
Follow ESD precautions to protect against ESD strikes.
Transients:
FREQUENCY GENERATION - CHIP
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
3 - 46
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265
deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds
of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter
of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Ball bonds should be made with a force of 40-50
grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 deg. C.
A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as
possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
v01.0701
HMC363
MICROWAVE CORPORATION
GaAs HBT MMIC
DIVIDE-BY-8, DC - 12.0 GHz
Notes:
FREQUENCY GENERATION - CHIP
3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
3 - 47