Sensor Data Sheets

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CdS Photoconductive Photocells
PDV-P8001
PACKAGE
DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
±.010 [0.25]
.169 [4.29]
+.015 [0.38]
-.010 [0.25]
.079 [2.00]
EPOXY ON LEADS 3 mm MAX
2X Ø.016 [0.40]
.134 [3.40]
PLASTIC
COATED
±.010 [0.25]
Ø.200 [5.08]
2X 1.023 [26.0]
CERAMIC PACKAGE
FEATURES
DESCRIPTION
APPLICATIONS
• Visible light response
• Sintered construction
• Low cost
The PDV-P8001 are (CdS), Photoconductive
photocells designed to sense light from 400 to 700
nm. These light dependent resistors are available in
a wide range of resistance values. They’re packaged
in a two leaded plastic-coated ceramic header.
• Camera exposure
• Shutter controls
• Night light Controls
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
PARAMETER
MIN
MAX
Vpk
Applied Voltage
150
Pd Δpo/Δt
Continuous Power Dissipation
100
TO
Operating and Storage Temperature
TS
Soldering Temperature*
-30
+75
+260
UNITS
V
mW/°C
°C
°C
* 0.200 inch from base for 3 seconds with heat sink.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
RD
RI
S
lrange
lpeak
tr
Tf
CHARACTERISTIC
TEST CONDITIONS
After 10 sec. @ 10 Lux @ 2856 °K
10 Lux @ 2856 °K
LOG(R100)-LOG(R10)**
Sensitivity
LOG(E100)-LOG(E10)***
Spectral Application Range Flooded
Spectral Application Range Flooded
Rise Time
10 Lux @ 2856 °K
Fall Time
After 10 Lux @ 2856 °K
Dark Resistance
Illuminated Resistance
MIN
TYP
0.2
3
MAX
11
W/Lux
0.6
400
700
520
55
20
UNITS
MW
KW
nm
nm
ms
ms
**R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 °K respectively .
***E100, E10: luminances at 100 Lux and 10 Lux 2856 °K respectively.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
REV 3/30/06
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Thin Film Platinum RTD's
U.S. Sensor’s thin film platinum resistance temperature detectors (Pt-RTD) consist of a thin film platinum
deposited on a ceramic substrate. Thin film Pt-RTD’s provide cost advantages when compared to wire
wound Pt-RTD’s because of their lower material cost factor.
Features
• Glass coated platinum element
• Virtually linear relationship between
temperature and resistance
• Capable of withstanding temperatures
ranging from -50°C to +500°C. Higher
temperature ratings are available by
special order
• High Reliability: Capable of withstanding extreme
environmental conditions
• Available in various probe configurations for specific
applications
• Excellent stability even at high temperatures
THIN FILM PLATINUM RTDs
• High accuracy: Resistance and
temperature deviation can be
controlled to within ±0.06% and
±0.15°C, a tolerance that corresponds
to Class “A” of IEC 751 or 1/2 DIN of
DIN 43760
U.S. Sensor
1832 W. Collins Ave
Orange, CA 92867
Tel: 800-777-6467
Tel: 714-639-1000
Fax: 714-639-1220
Email: sales@ussensor.com
Specifications
• Thermal time constant: 15 seconds max. (moving
air)
• Dissipation constant: 2mW/°C (moving air)
• Maximum applied current: 1 mA
View Photo
RTD THIN PLATINUM
Part Number
Resistance DIN 43760
Ohms @ 0°C
Class
Resistance
Tol ±% @ 0°C
Temp. Dev.
±°C @ 0°C
TCR
ppm/°C
Dim "W"
(±0.007)
Dim "L"
(±0.008)
PPG101A1
100
A
0.06
0.15
3850
0.067
0.110
PPG101B1
100
B
0.12
0.30
3850
0.067
0.110
PPG101C1
100
C
0.24
0.60
3850
0.067
0.110
PPG501A1
500
A
0.06
0.15
3850
0.079
0.118
PPG501B1
500
B
0.12
0.30
3850
0.079
0.118
PPG501C1
500
C
0.24
0.60
3850
0.079
0.118
PPG102A1
1000
A
0.06
0.15
3850
0.079
0.118
PPG102B1
1000
B
0.12
0.30
3850
0.079
0.118
PPG102C1
1000
C
0.24
0.60
3850
0.079
0.118
PPG102B2
1000
B
0.12
0.30
3750
0.079
0.118
PPG102C2
1000
C
0.24
0.60
3750
0.079
0.118
« Product Guide
Top^
View
R-T Chart
Next »
PLATINUM THIN FILM RTD ELEMENTS
• AVAILABLE IN 100, 500, 1000, AND 2000 OHM
RESISTANCE VALUES
• STANDARD IEC 751, ASTME1137 & NON-STANDARD
TOLERANCES AVAILABLE
• WIDE CHOICE OF SIZES
• 2, 3, AND 4 WIRE EXTENSION LEADS AVAILABLE
• CUSTOM-ENGINEERED TEMPERATURE PROBE
ASSEMBLIES
Sensor Scientific, Inc. Platinum Thin Film RTD Elements are fabricated using state-of-the-art thin film processing techniques, resulting in
an element of exceptional quality and stability. The wide choice of
resistance, tolerance, and size options allows for complete design
flexibility.
RTD elements are available with extension leads, and incorporated in
complete temperature probe assemblies. Please contact Sensor
Scientific for additional information.
Assemblies:
Generally, thin film RTD elements are incorporated into some type of
assembly for protection. Extension leads may be attached via soldering, crimping, brazing or welding. The attachment method must be
capable of withstanding the intended
maximum operating temperature.
The following precautions must be taken when incorporating the
element into an assembly:
1) Avoid straining the element leads.
2) If extension leads are attached via soldering or brazing, all flux
residue must be removed.
3) The resistance of extension leads must be taken into consideration.
Resistance value at 0°C calibrated 1mm from end of lead wire.
4) If elements are encapsulated in a potting compound, insure that
the compound will not induce pressure loads, resulting in a straingage effect.
Resistance
at 0 Deg. C.
ohms
L
Length
mm
W
Width
mm
H
Height
mm
Part Number
100
100
100
100
100
100
100
500
500
500
1000
1000
1000
1000
2000
5.0 +/- 0.2
5.0 +/- 0.2
2.3 +/- 0.2
5.0 +/- 0.2
10.0 +/- 0.2
5.0 +/- 0.2
1.6+/- 0.15
5.0 +/- 0.2
10.0 +/- 0.2
5.0 +/- 0.2
4.0 +/- 0.2
10.0 +/- 0.2
5.0 +/- 0.2
1.6+/- 0.15
10.0 +/- 0.2
1.0 +/- 0.2
1.5 +/- 0.2
2.0 +/- 0.2
2.0 +/- 0.2
2.0 +/- 0.2
4.0 +/- 0.2
1.25 +/- 0.1
2.0 +/- 0.2
2.0 +/- 0.2
4.0 +/- 0.2
2.0 +/- 0.2
2.0 +/- 0.2
4.0 +/- 0.2
1.25 +/- 0.1
2.0 +/- 0.2
1.3 +/- 0.2
1.3 +/- 0.2
1.3 +/- 0.2
1.3 +/- 0.2
1.3 +/- 0.2
1.3 +/- 0.2
1.00 +/- 0.2
1.3 +/- 0.2
1.3 +/- 0.2
1.3 +/- 0.2
1.3 +/- 0.2
1.3 +/- 0.2
1.3 +/- 0.2
1.00 +/- 0.2
1.3 +/- 0.2
P01lln1
P01lln2
P01lln3
P01lln4
P01lln5
P01lln6
P01llM7
P05lln1
P05lln2
P05lln3
P10lln1
P10lln2
P10lln3
P10llM4
P20lln4
Resistance value at 0°C
calibrated 1mm from end of
lead wire. DIN = IEC751
ll - Tolerance
01=1/10 DIN B at 0°C
02 = 1/5 DIN B at 0°C
03 = 1/4 DIN B at 0°C
04 = 1/3 DIN B at 0°C
0A = 1/2 DIN B (DIN A) at 0°C
0B = DIN B
05 = ASTM B
06 = 3/2 DIN B at 0°C
07 = 2 DIN B at 0°C
08 = 5 DIN B at 0°C
09 = 10 DIN B at 0°C
n - Temperature Range
L = -50 to + 400 Deg C
M= -50 to + 550 Deg C
H= -50 to + 600 Deg C
Call us toll-free at 800-524-1610 (in the US) — or check us out on the web at www.sensorsci.com
6 Kings Bridge Road - Fairfield, New Jersey 07004 • sales@sensorsci.com • Phone: (973) 227-7790 - Fax: (973) 227-8063
Reference Table For Pt RTD Elements
°C
-200
-190
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
+10
+20
+30
+40
+50
+60
+70
+80
+90
+100
+110
+120
+130
+140
Ω
18.52
22.83
27.10
31.34
35.54
39.72
43.88
48.00
52.11
56.19
60.26
64.30
68.33
72.33
76.33
80.31
84.27
88.22
92.16
96.09
100.00
103.90
107.79
111.67
115.54
119.40
123.24
127.08
130.90
134.71
138.51
142.29
146.07
149.83
153.58
°C
+160
+170
+180
+190
+200
+210
+220
+230
+240
+250
+260
+270
+280
+290
+300
+310
+320
+330
+340
+350
+360
+370
+380
+390
+400
+410
+420
+430
+440
+450
+460
+470
+480
+490
+500
Ω
161.05
164.77
168.48
172.17
175.86
179.53
183.19
186.84
190.47
194.10
197.71
201.31
204.90
208.48
212.05
215.61
219.15
222.68
226.21
229.72
233.21
236.70
240.18
243.64
247.09
250.53
253.96
257.38
260.78
264.18
267.56
270.93
274.29
277.64
280.98
Ω
°C
+510
+520
+530
+540
+550
+560
+570
+580
+590
+600
284.30
287.62
290.92
294.21
297.49
300.75
304.01
307.25
310.49
313.71
The permissible deviations for platinum resistance elements
are determined by the following equations (in accordance with
IEC 751,2: 1995- 07 [DIN EN 60751: 1996-07]):
Permissible deviation in °C = ±(0.15 + 0.002 [t]) for Class A
Permissible deviation in °C = ±(0.3 + 0.005 [t]) for Class B
Where [t] is the temperature value (in °C)
Deviations in °C apply to all nominal resistances; deviations in
Ω only to 100 Ω.
For nominal resistance values other than 100 Ω the deviation
values in Ω must be multiplied by the factor R0 X 10-2 .
Other tolerances are available
Reference
Tables are
available in
5°C and 1°C
increments
upon request
Nominal Resistance: 100 ohms @ 0°C
For Nominal resistance values other than 100 Ω @ °C resistance
values from the table are corrected using the equation R 0 X10-2 where R0 =
nominal resistance at 0°C.
• Mean temperature coefficient between 0 and 100°C = 3.85 x 10-3 x K-1 (in
accordance with IEC 751,2:1995-07 [DIN EN 60751;1996-07])
• Calculation of Resistance values:
Equations acc. to IEC 751,2: 1995-07 (DIN EN 60751: 1996-07)
Temperature range from -200 to 0°C:
R† + R0 (1 +A† +B†2 + C(† - 100°C) †3]
Temperature range from 0 to +850°C:
R† + R0 (1 + A† + B†2)
Where: A = 3.9083 x 10-3 °C-1; B=-5.775 x 10 -7 °C-2; C=-4.183 x 10-12 °C-4
R† is the resistance in Ω at temperature †
† is the temperature in °C
• Resistance values from -200 to -250°C were obtained by our own fixed
point measurement
6 Kings Bridge Road - Fairfield, New Jersey 07004 • sales@sensorsci.com • Phone: (973) 227-7790 - Fax: (973) 227-8063
TCRT5000, TCRT5000L
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
FEATURES
• Package type: leaded
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 10.2 x 5.8 x 7
• Peak operating distance: 2.5 mm
• Operating range within > 20 % relative collector
current: 0.2 mm to 15 mm
19156_2
• Typical output current under test: IC = 1 mA
C
• Daylight blocking filter
A
• Emitter wavelength: 950 nm
E
Top view
• Lead (Pb)-free soldering released
C
• Compliant to RoHS directive 2002/95/EC
accordance to WEEE 2002/96/EC
19156_1
DESCRIPTION
APPLICATIONS
The TCRT5000 and TCRT5000L are reflective sensors
which include an infrared emitter and phototransistor in a
leaded package which blocks visible light. The package
includes two mounting clips. TCRT5000L is the long lead
version.
• Position sensor for shaft encoder
and
in
• Detection of reflective material such as paper, IBM cards,
magnetic tapes etc.
• Limit switch for mechanical motions in VCR
• General purpose - wherever the space is limited
PRODUCT SUMMARY
PART NUMBER
DISTANCE FOR
MAXIMUM CTRrel (1)
(mm)
DISTANCE RANGE FOR
RELATIVE Iout > 20 %
(mm)
TYPICAL OUTPUT
CURRENT UNDER TEST (2)
(mA)
DAYLIGHT
BLOCKING FILTER
INTEGRATED
TCRT5000
2.5
0.2 to 15
1
Yes
TCRT5000L
2.5
0.2 to 15
1
Yes
Notes
(1) CTR: current transfere ratio, I /I
out in
(2) Conditions like in table basic charactristics/sensors
ORDERING INFORMATION
PACKAGING
VOLUME (1)
REMARKS
TCRT5000
Tube
MOQ: 4500 pcs, 50 pcs/tube
3.5 mm lead length
TCRT5000L
Tube
MOQ: 2400 pcs, 48 pcs/tube
15 mm lead length
ORDERING CODE
Note
MOQ: minimum order quantity
(1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT (EMITTER)
Reverse voltage
VR
5
V
Forward current
IF
60
mA
Forward surge current
Power dissipation
Junction temperature
Document Number: 83760
Rev. 1.7, 17-Aug-09
tp ≤ 10 µs
IFSM
3
A
Tamb ≤ 25 °C
PV
100
mW
Tj
100
°C
For technical questions, contact: sensorstechsupport@vishay.com
www.vishay.com
1
TCRT5000, TCRT5000L
Reflective Optical Sensor with
Transistor Output
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
5
V
OUTPUT (DETECTOR)
Collector current
Tamb ≤ 55 °C
Power dissipation
IC
100
mA
PV
100
mW
Tj
100
°C
Junction temperature
SENSOR
Tamb ≤ 25 °C
Total power dissipation
Ptot
200
mW
Ambient temperature range
Tamb
- 25 to + 85
°C
Storage temperature range
Tstg
- 25 to + 100
°C
Tsd
260
°C
2 mm from case, t ≤ 10 s
Soldering temperature
Note
(1) T
amb = 25 °C, unless otherwise specified
ABSOLUTE MAXIMUM RATINGS
P - Power Dissipation (mW)
300
Coupled device
200
Phototransistor
100
IR - diode
0
25
0
95 11071
75
50
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(1)
PARAMETER
TEST CONDITION
SYMBOL
IF = 60 mA
VR = 0 V, f = 1 MHz
MIN.
TYP.
MAX.
VF
1.25
1.5
Cj
17
UNIT
INPUT (EMITTER)
Forward voltage
Junction capacitance
V
pF
Radiant intensity
IF = 60 mA, tp = 20 ms
Ie
Peak wavelength
IF = 100 mA
λP
Method: 63 % encircled energy
d
Collector emitter voltage
IC = 1 mA
VCEO
70
V
Emitter collector voltage
Ie = 100 µA
VECO
7
V
VCE = 20 V, IF = 0 A, E = 0 lx
ICEO
VCE = 5 V, IF = 10 mA,
D = 12 mm
IC (2) (3)
IF = 10 mA, IC = 0.1 mA,
D = 12 mm
VCEsat (2) (3)
Virtual source diameter
21
940
mW/sr
nm
2.1
mm
OUTPUT (DETECTOR)
Collector dark current
10
200
nA
1
2.1
mA
0.4
V
SENSOR
Collector current
Collector emitter saturation
voltage
0.5
Note
Tamb = 25 °C, unless otherwise specified
(2) See figure 3
(3) Test surface: mirror (Mfr. Spindler a. Hoyer, Part No. 340005)
(1)
www.vishay.com
2
For technical questions, contact: sensorstechsupport@vishay.com
Document Number: 83760
Rev. 1.7, 17-Aug-09
TCRT5000, TCRT5000L
Reflective Optical Sensor with
Transistor Output
Vishay Semiconductors
94 9226
IF
Flat mirror
∅ = 22.5 mm
rem. 2
IC
VCC
d = working distance
D = distance
12 ± 0.2 mm
TCRT5000
7.0 ± 0.2 mm
A
96 12314
Fig. 2 - Test Circuit
Fig. 3 - Test Circuit
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1000
10
IC - Collector Current (mA)
IF - Forward Current (mA)
VCE = 5 V
100
10
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF - Forward Voltage (V)
96 11862
1
0.1
0.01
0.001
0.1
96 11763
1.2
1.1
0.9
0.8
0.7
0.6
- 30 - 20 -10 0 10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature
Document Number: 83760
Rev. 1.7, 17-Aug-09
100
10
VCE = 5 V
I F = 20 mA
1.0
96 11762
10
Fig. 6 - Collector Current vs. Forward Current
IC - Collector Current (mA)
CTR rel - Relative Current Transfer Ratio
Fig. 4 - Forward Current vs. Forward Voltage
1
I F - Forward Current (mA)
I F = 50 mA
20 mA
1
10 mA
5 mA
2 mA
0.1
1 mA
0.01
0.1
96 11764
1
10
100
VCE - Collector Emitter Voltage (V)
Fig. 7 - Collector Emitter Saturation Voltage vs. Collector Current
For technical questions, contact: sensorstechsupport@vishay.com
www.vishay.com
3
TCRT5000, TCRT5000L
Vishay Semiconductors
Reflective Optical Sensor with
Transistor Output
1.2
VCE = 5 V
I Crel - Relative Collector Current
CTR - Current Transfer Ratio (%)
100
10
1
0.1
0.1
96 11765
VCE = 10 V
I F = 20 mA
1.0
0.8
0.6
0.4
0.2
0.0
1
10
I F - Forward Current (mA)
100
Fig. 8 - Current Transfer Ratio vs. Forward Current
0
96 11766
4
8
10 12 14 16
2
6
d - Distance to Reflecting Card (mm)
Fig. 9 - Relative Collector Current vs. Distance
PACKAGE DIMENSIONS in millimeters, TCRT5000
96 12073
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4
For technical questions, contact: sensorstechsupport@vishay.com
Document Number: 83760
Rev. 1.7, 17-Aug-09
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