CdS Photoconductive Photocells PDV-P8001 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ±.010 [0.25] .169 [4.29] +.015 [0.38] -.010 [0.25] .079 [2.00] EPOXY ON LEADS 3 mm MAX 2X Ø.016 [0.40] .134 [3.40] PLASTIC COATED ±.010 [0.25] Ø.200 [5.08] 2X 1.023 [26.0] CERAMIC PACKAGE FEATURES DESCRIPTION APPLICATIONS • Visible light response • Sintered construction • Low cost The PDV-P8001 are (CdS), Photoconductive photocells designed to sense light from 400 to 700 nm. These light dependent resistors are available in a wide range of resistance values. They’re packaged in a two leaded plastic-coated ceramic header. • Camera exposure • Shutter controls • Night light Controls ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL PARAMETER MIN MAX Vpk Applied Voltage 150 Pd Δpo/Δt Continuous Power Dissipation 100 TO Operating and Storage Temperature TS Soldering Temperature* -30 +75 +260 UNITS V mW/°C °C °C * 0.200 inch from base for 3 seconds with heat sink. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL RD RI S lrange lpeak tr Tf CHARACTERISTIC TEST CONDITIONS After 10 sec. @ 10 Lux @ 2856 °K 10 Lux @ 2856 °K LOG(R100)-LOG(R10)** Sensitivity LOG(E100)-LOG(E10)*** Spectral Application Range Flooded Spectral Application Range Flooded Rise Time 10 Lux @ 2856 °K Fall Time After 10 Lux @ 2856 °K Dark Resistance Illuminated Resistance MIN TYP 0.2 3 MAX 11 W/Lux 0.6 400 700 520 55 20 UNITS MW KW nm nm ms ms **R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 °K respectively . ***E100, E10: luminances at 100 Lux and 10 Lux 2856 °K respectively. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV 3/30/06 !! ! " #$%&''(&&')*+',$ -$(*' .$-/&&)$.#.0,1''+2'%$ 3$ (%'(*4'&('1%2++(%'&4&+(*5(4$ 6$**('('178**+(42+1*$ ($" 3.# 9#3#:6 (4" # 3 ; ;<;; 2''( #.. & *&(4 3. &*(4 / (4&(1(4 6. =>/ (4&(1(4 // =#.. (%%4&(1 ?#$@&&)$.@30,&9%A -@. /*%' ; *&9(5%2 (4 &*9(5%2 (4 *&(1( (4 ;$ $ ;<$ 3. / .$6 '& #. ' (& #/ ' *(51 (*1 ($" 3.# 9#3#:6 #.. .$-. .$6. .$C- .$@. #$.> #$/@ #$.6 #$-. #$@. #$>. -$6. & B#& B.&:* B#.. B.&:* B.$#& B#&:* 9 $ B/ B#& B#! B#. B.&:* 9 99 9 B/ B#&:* 9 BD6.& 9 9 (4" - 3 !" µ )-/ &7&(1''+2'%, ,)-, ,$'), &)*+ !) ,)-, $ 1 µ #$%& 0 $''%$ ( Ω 0 - .%!/ $ 12 1 3 0 5 - 4 4 5 - 0 ($" 3.# 9#3#:6 (4" 3 3 Thin Film Platinum RTD's U.S. Sensor’s thin film platinum resistance temperature detectors (Pt-RTD) consist of a thin film platinum deposited on a ceramic substrate. Thin film Pt-RTD’s provide cost advantages when compared to wire wound Pt-RTD’s because of their lower material cost factor. Features • Glass coated platinum element • Virtually linear relationship between temperature and resistance • Capable of withstanding temperatures ranging from -50°C to +500°C. Higher temperature ratings are available by special order • High Reliability: Capable of withstanding extreme environmental conditions • Available in various probe configurations for specific applications • Excellent stability even at high temperatures THIN FILM PLATINUM RTDs • High accuracy: Resistance and temperature deviation can be controlled to within ±0.06% and ±0.15°C, a tolerance that corresponds to Class “A” of IEC 751 or 1/2 DIN of DIN 43760 U.S. Sensor 1832 W. Collins Ave Orange, CA 92867 Tel: 800-777-6467 Tel: 714-639-1000 Fax: 714-639-1220 Email: sales@ussensor.com Specifications • Thermal time constant: 15 seconds max. (moving air) • Dissipation constant: 2mW/°C (moving air) • Maximum applied current: 1 mA View Photo RTD THIN PLATINUM Part Number Resistance DIN 43760 Ohms @ 0°C Class Resistance Tol ±% @ 0°C Temp. Dev. ±°C @ 0°C TCR ppm/°C Dim "W" (±0.007) Dim "L" (±0.008) PPG101A1 100 A 0.06 0.15 3850 0.067 0.110 PPG101B1 100 B 0.12 0.30 3850 0.067 0.110 PPG101C1 100 C 0.24 0.60 3850 0.067 0.110 PPG501A1 500 A 0.06 0.15 3850 0.079 0.118 PPG501B1 500 B 0.12 0.30 3850 0.079 0.118 PPG501C1 500 C 0.24 0.60 3850 0.079 0.118 PPG102A1 1000 A 0.06 0.15 3850 0.079 0.118 PPG102B1 1000 B 0.12 0.30 3850 0.079 0.118 PPG102C1 1000 C 0.24 0.60 3850 0.079 0.118 PPG102B2 1000 B 0.12 0.30 3750 0.079 0.118 PPG102C2 1000 C 0.24 0.60 3750 0.079 0.118 « Product Guide Top^ View R-T Chart Next » PLATINUM THIN FILM RTD ELEMENTS • AVAILABLE IN 100, 500, 1000, AND 2000 OHM RESISTANCE VALUES • STANDARD IEC 751, ASTME1137 & NON-STANDARD TOLERANCES AVAILABLE • WIDE CHOICE OF SIZES • 2, 3, AND 4 WIRE EXTENSION LEADS AVAILABLE • CUSTOM-ENGINEERED TEMPERATURE PROBE ASSEMBLIES Sensor Scientific, Inc. Platinum Thin Film RTD Elements are fabricated using state-of-the-art thin film processing techniques, resulting in an element of exceptional quality and stability. The wide choice of resistance, tolerance, and size options allows for complete design flexibility. RTD elements are available with extension leads, and incorporated in complete temperature probe assemblies. Please contact Sensor Scientific for additional information. Assemblies: Generally, thin film RTD elements are incorporated into some type of assembly for protection. Extension leads may be attached via soldering, crimping, brazing or welding. The attachment method must be capable of withstanding the intended maximum operating temperature. The following precautions must be taken when incorporating the element into an assembly: 1) Avoid straining the element leads. 2) If extension leads are attached via soldering or brazing, all flux residue must be removed. 3) The resistance of extension leads must be taken into consideration. Resistance value at 0°C calibrated 1mm from end of lead wire. 4) If elements are encapsulated in a potting compound, insure that the compound will not induce pressure loads, resulting in a straingage effect. Resistance at 0 Deg. C. ohms L Length mm W Width mm H Height mm Part Number 100 100 100 100 100 100 100 500 500 500 1000 1000 1000 1000 2000 5.0 +/- 0.2 5.0 +/- 0.2 2.3 +/- 0.2 5.0 +/- 0.2 10.0 +/- 0.2 5.0 +/- 0.2 1.6+/- 0.15 5.0 +/- 0.2 10.0 +/- 0.2 5.0 +/- 0.2 4.0 +/- 0.2 10.0 +/- 0.2 5.0 +/- 0.2 1.6+/- 0.15 10.0 +/- 0.2 1.0 +/- 0.2 1.5 +/- 0.2 2.0 +/- 0.2 2.0 +/- 0.2 2.0 +/- 0.2 4.0 +/- 0.2 1.25 +/- 0.1 2.0 +/- 0.2 2.0 +/- 0.2 4.0 +/- 0.2 2.0 +/- 0.2 2.0 +/- 0.2 4.0 +/- 0.2 1.25 +/- 0.1 2.0 +/- 0.2 1.3 +/- 0.2 1.3 +/- 0.2 1.3 +/- 0.2 1.3 +/- 0.2 1.3 +/- 0.2 1.3 +/- 0.2 1.00 +/- 0.2 1.3 +/- 0.2 1.3 +/- 0.2 1.3 +/- 0.2 1.3 +/- 0.2 1.3 +/- 0.2 1.3 +/- 0.2 1.00 +/- 0.2 1.3 +/- 0.2 P01lln1 P01lln2 P01lln3 P01lln4 P01lln5 P01lln6 P01llM7 P05lln1 P05lln2 P05lln3 P10lln1 P10lln2 P10lln3 P10llM4 P20lln4 Resistance value at 0°C calibrated 1mm from end of lead wire. DIN = IEC751 ll - Tolerance 01=1/10 DIN B at 0°C 02 = 1/5 DIN B at 0°C 03 = 1/4 DIN B at 0°C 04 = 1/3 DIN B at 0°C 0A = 1/2 DIN B (DIN A) at 0°C 0B = DIN B 05 = ASTM B 06 = 3/2 DIN B at 0°C 07 = 2 DIN B at 0°C 08 = 5 DIN B at 0°C 09 = 10 DIN B at 0°C n - Temperature Range L = -50 to + 400 Deg C M= -50 to + 550 Deg C H= -50 to + 600 Deg C Call us toll-free at 800-524-1610 (in the US) — or check us out on the web at www.sensorsci.com 6 Kings Bridge Road - Fairfield, New Jersey 07004 • sales@sensorsci.com • Phone: (973) 227-7790 - Fax: (973) 227-8063 Reference Table For Pt RTD Elements °C -200 -190 -180 -170 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 +10 +20 +30 +40 +50 +60 +70 +80 +90 +100 +110 +120 +130 +140 Ω 18.52 22.83 27.10 31.34 35.54 39.72 43.88 48.00 52.11 56.19 60.26 64.30 68.33 72.33 76.33 80.31 84.27 88.22 92.16 96.09 100.00 103.90 107.79 111.67 115.54 119.40 123.24 127.08 130.90 134.71 138.51 142.29 146.07 149.83 153.58 °C +160 +170 +180 +190 +200 +210 +220 +230 +240 +250 +260 +270 +280 +290 +300 +310 +320 +330 +340 +350 +360 +370 +380 +390 +400 +410 +420 +430 +440 +450 +460 +470 +480 +490 +500 Ω 161.05 164.77 168.48 172.17 175.86 179.53 183.19 186.84 190.47 194.10 197.71 201.31 204.90 208.48 212.05 215.61 219.15 222.68 226.21 229.72 233.21 236.70 240.18 243.64 247.09 250.53 253.96 257.38 260.78 264.18 267.56 270.93 274.29 277.64 280.98 Ω °C +510 +520 +530 +540 +550 +560 +570 +580 +590 +600 284.30 287.62 290.92 294.21 297.49 300.75 304.01 307.25 310.49 313.71 The permissible deviations for platinum resistance elements are determined by the following equations (in accordance with IEC 751,2: 1995- 07 [DIN EN 60751: 1996-07]): Permissible deviation in °C = ±(0.15 + 0.002 [t]) for Class A Permissible deviation in °C = ±(0.3 + 0.005 [t]) for Class B Where [t] is the temperature value (in °C) Deviations in °C apply to all nominal resistances; deviations in Ω only to 100 Ω. For nominal resistance values other than 100 Ω the deviation values in Ω must be multiplied by the factor R0 X 10-2 . Other tolerances are available Reference Tables are available in 5°C and 1°C increments upon request Nominal Resistance: 100 ohms @ 0°C For Nominal resistance values other than 100 Ω @ °C resistance values from the table are corrected using the equation R 0 X10-2 where R0 = nominal resistance at 0°C. • Mean temperature coefficient between 0 and 100°C = 3.85 x 10-3 x K-1 (in accordance with IEC 751,2:1995-07 [DIN EN 60751;1996-07]) • Calculation of Resistance values: Equations acc. to IEC 751,2: 1995-07 (DIN EN 60751: 1996-07) Temperature range from -200 to 0°C: R† + R0 (1 +A† +B†2 + C(† - 100°C) †3] Temperature range from 0 to +850°C: R† + R0 (1 + A† + B†2) Where: A = 3.9083 x 10-3 °C-1; B=-5.775 x 10 -7 °C-2; C=-4.183 x 10-12 °C-4 R† is the resistance in Ω at temperature † † is the temperature in °C • Resistance values from -200 to -250°C were obtained by our own fixed point measurement 6 Kings Bridge Road - Fairfield, New Jersey 07004 • sales@sensorsci.com • Phone: (973) 227-7790 - Fax: (973) 227-8063 TCRT5000, TCRT5000L Vishay Semiconductors Reflective Optical Sensor with Transistor Output FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions (L x W x H in mm): 10.2 x 5.8 x 7 • Peak operating distance: 2.5 mm • Operating range within > 20 % relative collector current: 0.2 mm to 15 mm 19156_2 • Typical output current under test: IC = 1 mA C • Daylight blocking filter A • Emitter wavelength: 950 nm E Top view • Lead (Pb)-free soldering released C • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC 19156_1 DESCRIPTION APPLICATIONS The TCRT5000 and TCRT5000L are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. The package includes two mounting clips. TCRT5000L is the long lead version. • Position sensor for shaft encoder and in • Detection of reflective material such as paper, IBM cards, magnetic tapes etc. • Limit switch for mechanical motions in VCR • General purpose - wherever the space is limited PRODUCT SUMMARY PART NUMBER DISTANCE FOR MAXIMUM CTRrel (1) (mm) DISTANCE RANGE FOR RELATIVE Iout > 20 % (mm) TYPICAL OUTPUT CURRENT UNDER TEST (2) (mA) DAYLIGHT BLOCKING FILTER INTEGRATED TCRT5000 2.5 0.2 to 15 1 Yes TCRT5000L 2.5 0.2 to 15 1 Yes Notes (1) CTR: current transfere ratio, I /I out in (2) Conditions like in table basic charactristics/sensors ORDERING INFORMATION PACKAGING VOLUME (1) REMARKS TCRT5000 Tube MOQ: 4500 pcs, 50 pcs/tube 3.5 mm lead length TCRT5000L Tube MOQ: 2400 pcs, 48 pcs/tube 15 mm lead length ORDERING CODE Note MOQ: minimum order quantity (1) ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT INPUT (EMITTER) Reverse voltage VR 5 V Forward current IF 60 mA Forward surge current Power dissipation Junction temperature Document Number: 83760 Rev. 1.7, 17-Aug-09 tp ≤ 10 µs IFSM 3 A Tamb ≤ 25 °C PV 100 mW Tj 100 °C For technical questions, contact: sensorstechsupport@vishay.com www.vishay.com 1 TCRT5000, TCRT5000L Reflective Optical Sensor with Transistor Output Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 5 V OUTPUT (DETECTOR) Collector current Tamb ≤ 55 °C Power dissipation IC 100 mA PV 100 mW Tj 100 °C Junction temperature SENSOR Tamb ≤ 25 °C Total power dissipation Ptot 200 mW Ambient temperature range Tamb - 25 to + 85 °C Storage temperature range Tstg - 25 to + 100 °C Tsd 260 °C 2 mm from case, t ≤ 10 s Soldering temperature Note (1) T amb = 25 °C, unless otherwise specified ABSOLUTE MAXIMUM RATINGS P - Power Dissipation (mW) 300 Coupled device 200 Phototransistor 100 IR - diode 0 25 0 95 11071 75 50 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (1) PARAMETER TEST CONDITION SYMBOL IF = 60 mA VR = 0 V, f = 1 MHz MIN. TYP. MAX. VF 1.25 1.5 Cj 17 UNIT INPUT (EMITTER) Forward voltage Junction capacitance V pF Radiant intensity IF = 60 mA, tp = 20 ms Ie Peak wavelength IF = 100 mA λP Method: 63 % encircled energy d Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage Ie = 100 µA VECO 7 V VCE = 20 V, IF = 0 A, E = 0 lx ICEO VCE = 5 V, IF = 10 mA, D = 12 mm IC (2) (3) IF = 10 mA, IC = 0.1 mA, D = 12 mm VCEsat (2) (3) Virtual source diameter 21 940 mW/sr nm 2.1 mm OUTPUT (DETECTOR) Collector dark current 10 200 nA 1 2.1 mA 0.4 V SENSOR Collector current Collector emitter saturation voltage 0.5 Note Tamb = 25 °C, unless otherwise specified (2) See figure 3 (3) Test surface: mirror (Mfr. Spindler a. Hoyer, Part No. 340005) (1) www.vishay.com 2 For technical questions, contact: sensorstechsupport@vishay.com Document Number: 83760 Rev. 1.7, 17-Aug-09 TCRT5000, TCRT5000L Reflective Optical Sensor with Transistor Output Vishay Semiconductors 94 9226 IF Flat mirror ∅ = 22.5 mm rem. 2 IC VCC d = working distance D = distance 12 ± 0.2 mm TCRT5000 7.0 ± 0.2 mm A 96 12314 Fig. 2 - Test Circuit Fig. 3 - Test Circuit BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 10 IC - Collector Current (mA) IF - Forward Current (mA) VCE = 5 V 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage (V) 96 11862 1 0.1 0.01 0.001 0.1 96 11763 1.2 1.1 0.9 0.8 0.7 0.6 - 30 - 20 -10 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature Document Number: 83760 Rev. 1.7, 17-Aug-09 100 10 VCE = 5 V I F = 20 mA 1.0 96 11762 10 Fig. 6 - Collector Current vs. Forward Current IC - Collector Current (mA) CTR rel - Relative Current Transfer Ratio Fig. 4 - Forward Current vs. Forward Voltage 1 I F - Forward Current (mA) I F = 50 mA 20 mA 1 10 mA 5 mA 2 mA 0.1 1 mA 0.01 0.1 96 11764 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 7 - Collector Emitter Saturation Voltage vs. Collector Current For technical questions, contact: sensorstechsupport@vishay.com www.vishay.com 3 TCRT5000, TCRT5000L Vishay Semiconductors Reflective Optical Sensor with Transistor Output 1.2 VCE = 5 V I Crel - Relative Collector Current CTR - Current Transfer Ratio (%) 100 10 1 0.1 0.1 96 11765 VCE = 10 V I F = 20 mA 1.0 0.8 0.6 0.4 0.2 0.0 1 10 I F - Forward Current (mA) 100 Fig. 8 - Current Transfer Ratio vs. Forward Current 0 96 11766 4 8 10 12 14 16 2 6 d - Distance to Reflecting Card (mm) Fig. 9 - Relative Collector Current vs. Distance PACKAGE DIMENSIONS in millimeters, TCRT5000 96 12073 www.vishay.com 4 For technical questions, contact: sensorstechsupport@vishay.com Document Number: 83760 Rev. 1.7, 17-Aug-09