Innovative Semiconductor Solutions for energy efficiency, mobility and security
Reinhard Wagner
VP Planning and Controlling Front End
Infineon Technologies AG
15.10.2012

Table of Contents
 The Need for Power Semiconductor – a Market Perspective
 Power Technology Roadmap
 Power at 300mm – Manufacturing Concept
 Summary
12-10-15 Copyright @ Infineon Technologies 2012. All rights reserved Page 2

Table of Contents
 The Need for Power Semiconductor – a Market Perspective
 Power Technology Roadmap
 Power at 300mm – Manufacturing Concept
 Summary
12-10-15 Copyright @ Infineon Technologies 2012. All rights reserved Page 3

Growing Population and Increase in
Wealth Continue to Drive Consumption …
World population
1960-2010
Gross world product
1960-2010
8
5
4
3
2
7
6
1
0
1960 1970 1980 1990 2000 2010 x 2
90
80
70
60
50
40
30
20
10
0
1960 1970 1980 1990 2000 2010 x 45
Source:
UN Data, IMF, Worldbank
Gross World Product = the sum of all finished goods & services produced globally
07 June 2011

… and Demand for Energy
12-10-15
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Page 5

Good News is that ~1/3 of the Global
Energy is Used as Electricity
12-10-15
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Page 6

Most of the Energy is Actually Not „Consumed“
But „Lost“ in Production and on the Way!
12-10-15
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Page 7

New Era: Multiple Factors Driving Demand for Power Semiconductors
'90 – '10 '10 – '30 Changes
Courtesy: Tesla

Electrification of powertrain fuels demand for high-power semis in cars and doubles silicon content.
 Shift towards renewable energies requires orders of magnitude more high-power semis per
MW of power generated.
12-10-15
 Higher efficiency in power conversion lowers
CO
2
, material and electricity costs.
 Stronger demand for goods containing power semis due to faster increase in standard of living in BRIC countries.
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Page 8

Table of Contents
 The Need for Power Semiconductor – a Market Perspective
 Power Technology Roadmap
 Power at 300mm – Manufacturing Concept
 Summary
12-10-15 Copyright @ Infineon Technologies 2012. All rights reserved Page 9

Power Semis: Power versus Frequency –
Infineon Covers the Full Range
15.10.2012
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10

CMOS versus Power
The Difference in Focus & Concept
CMOS
Transistor architecture
Planar Super-junction
G
S D
~350µm
S G
POWER p p
Focus on high switching frequency and high density
≤ 70µm D Focus on high current and low resistivity
12-10-15
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In-house Manufacturing of Power Semis:
A Strong Differentiating Factor
12-10-15 Copyright @ Infineon Technologies 2012. All rights reserved 12

Thin Wafer Technology is a Key Enabler
Across All Power Technologies
12-10-15
(Insulated-gate Bipolar Transistor)
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The Wafer Diameter Roadmap of Power Semi`s
Lags 10 to 15 Years behind CMOS
12-10-15 Copyright @ Infineon Technologies 2012. All rights reserved 14

Migration to 300mm Leads to Competitive
Cost Advantage and Reduced CapEx
[related to physical wafers]
Wafer size
Equipment
Raw wafer cost
Personnel
Other effects
Relative Cost per mm²
200mm
100%
100%
100%
100%
100%
100%
300mm
70-80%
Power Semiconductors also benefit from larger Wafer
Size but Upfront Invest is significant and size matters
15.10.2012
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15

Table of Contents
 The Need for Power Semiconductor – a Market Perspective
 Power Technology Roadmap
 Power at 300mm – Manufacturing Concept
 Summary
12-10-15 Copyright @ Infineon Technologies 2012. All rights reserved Page 16

300 mm at Infineon
..the Early Days with Memory in 1998
12-10-15 Copyright © Infineon Technologies 2012. All rights reserved.
Page 17

… and now: Power @ 300mm
The Challenges
300mm Power Raw Wafer
• bulk crystal parameter, gettering & backside layer, …
 various options to cover a wide range of PowerMOS established
Power Semi Specific Wafer Processes
• high temp furnace, tick EPI, thin wafer, pre-assembly
 equipment adaptations established
Ultra Thin Wafer Technology
Thin Wafer Technology
• down to 40µm, back side processing

Infineon’s 200mm thin wafer technology established for 300mm enabling Power300
Wafer Handling-, Transport Automation
• power specific wafer processes & handling (e.g. thin wafer)
 equipment and wafer boxes adaptations established
Econonomics
• equipment invest, 200mm/300mm flexibility
 reuse of “CMOS tools”; bridge tools
June 3rd /10
For internal use only Copyright © Infineon Technologies 2009. All rights reserved. Page 18

Power300
1 st Silicon with positive results
 First positive results for 300mm power semi manufacturing


All static and dynamic data within expected values
Efficiency performance of 300mm is comparable with 200mm
 Pilot line installed in Villach (FE) +
Malacca (BE) and produces silicon using thin wafer technology (down to 70µm);
300mm yield is comparable with 200mm
 Dresden (FE) is set up as the high volume production site.
First technology transfer running.
 Ramp up of 1 st MOSFET Technologies according organic growth; IGBT planned to follow as next product family
Ultra Thin Wafer Technology enabling Power300
Technical challenges:
-ultra thin wafer handling
-adaptation of standard CMOS into power substrates
June 3rd /10
For internal use only Copyright © Infineon Technologies 2009. All rights reserved. Page 19

Infineon – twelve Production Sites worldwide
Frontend and Backend  5 Sites for Power300
Morgan Hill Dresden Kulim Beijing Wuxi
Power300
Warstein Singapore
Power300
Regensburg Villach Cegléd Malacca
Frontend Power300 Power300 Power300
Batam
Backend

Table of Contents
 The Need for Power Semiconductor – a Market Perspective
 Power Technology Roadmap
 Power at 300mm – Manufacturing Concept
 Summary
12-10-15 Copyright @ Infineon Technologies 2012. All rights reserved Page 21

Summary and Recap
 The world is in the transition phase from carbon based energy to electric energy
 Power semiconductors can dramatically help to increase energy efficiency
15.10.2012
 The differentiation in power semiconductors lies in mastering technology and manufacturing
 Infineon introduces 300mm technology for power semiconductor production
Copyright © Infineon Technologies 2011. All rights reserved.
22

15.10.2012