VFSTR University
II Year B.Tech. EEE I - Semester
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EC219 ELECTRONIC DEVICES AND CIRCUITS
Course Description & Objectives:
The purpose of this course is to give students a strong foundation in the field
of electronic devices. The subject may enhance the students to have a
thorough knowledge of the characteristics of electronic devices and help
them to analyze and design any real time applications.
Course Outcomes:
Upon successful completion of this course, students should be able to:
l Ability to understand semiconductor devices through energy band
diagrams
l Ability to analyze characteristics of semiconductor junctions
l Students will be able to understand and the usefulness of semiconductor
devices in circuit making.
l They will be able to use these basic circuits to develop various useful
applications.
UNIT I - Semiconductor Diodes :
Intrinsic and extrinsic semi conductors with their energy band diagrams,
mass action law, formation of pn junction diode, pn-diode working under
forward and reverse bias, current components & V-I characteristics of diode,
diode equation, temperature dependence of V-I characteristics, energy band
diagram of diode, transition and diffusion capacitances, specifications of
diodes, breakdowns in diodes, zener diode, tunnel diode, varacter diode,
LED, photo diode and LCD.
UNIT II - Rectifiers, Filters and Regulators :
Basic building blocks of linear mode power supply,derivations of ripple factor,
efficiency, TUF, peak factor, form factor, percentage regulation & PIV of Half
Wave Rectifier, Centre-tapped Full Wave Rectifier and Bridge rectifier. Circuit
operation and derivation of ripple factor for L, C, LC and CLC filters, simple
zener regulator.
Electrical & Electronics Engineering
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VFSTR University
UNIT III - Transistors :
BJT: Formation of PNP and NPN transistors, transistor current components,
transistor as an amplifier, CB, CE and CC configurations with their parameters
comparision;
FET: working principles and characteristics of JFET, MOSFET; Characteristics
and applications of UJT and SCR.
UNIT IV - Transistor Biasing (BJT & FET):
DC load line, AC load line and selection of operating point, need for biasing,
various biasing techniques: fixed bias, collector to base bias and self bias
with stability factors. Various compensation circuits, thermal runaway and
thermal stability.
UNIT V - Single Stage Amplifiers :
BJT amplifiers: Small signal low frequency transistor amplifier circuits: hparameter representation of a transistor, Analysis of single stage transistor
amplifier using h-parameters: voltage gain, current gain, Input impedance
and Output impedance. Comparison of transistor configurations in terms of
A i , Ri , Av , Ro, Frequency response of Common Emitter Amplifier, Common
Base Amplifier, Common Collector Amplifier.
FET amplifiers: FET amplifiers at low frequencies, CS / CD / CG configurations
at low frequencies, Gain Band Width Product.
TEXT BOOKS:
1.
2.
J.Millman and CC Halkias, “Electronic Devices and Circuits”, 2nd ed.,
Tata McGraw-Hill, , 2007.
S.Salivahanan, “Electronic Devices and Circuits” , 5th ed.,Tata McGrawHill, 2010.
REFERENCE BOOKS :
1.
R.L.Boylestad and Lovis Nashelsky, “Electronic Devices and Circuits
Theory”, 10th ed., Pearson Education, 2010.
2.
N.N.Bhargava, “Basic Electronics and Linear Circuits”, 1 st ed.,Tata
McGraw-Hill, 2009.
Sedra A.S. and K.C. Smith, “Micro Electronic Circuits”, 5th ed., Oxford
3.
University Press, 2006.
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Electrical & Electronics Engineering