GT100DA60U
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Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 3 μs short circuit capability
• FRED Pt® antiparallel diodes with ultrasoft
reverse recovery
SOT-227
• TJ maximum = 175 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
600 V
IC DC
100 A at 117 °C
VCE(on) typical at 100 A, 25 °C
1.72 V
IF DC
100 A at 25 °C
Package
SOT-227
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
SYMBOL
VCES
Continuous collector current
IC (1)
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
TEST CONDITIONS
IF
MAX.
UNITS
600
V
TC = 25 °C
184
TC = 80 °C
137
350
350
TC = 25 °C
TC = 80 °C
71
Peak diode forward current
IFSM
200
Gate to emitter voltage
VGE
± 20
Power dissipation, IGBT
PD
Power dissipation, diode
PD
Isolation voltage
VISOL
TC = 25 °C
577
TC = 117 °C
223
TC = 25 °C
205
TC = 117 °C
79
Any terminal to case, t = 1 min
A
100
2500
V
W
V
Note
(1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
Revision: 10-Jun-13
Document Number: 93185
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of
threshold voltage
Collector to emitter leakage current
Forward voltage drop
Gate to emitter leakage current
SYMBOL
MIN.
TYP.
MAX.
VGE = 0 V, IC = 250 μA
600
-
-
VGE = 15 V, IC = 100 A
-
1.72
2.0
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
2.0
2.2
3.5
4.6
6.5
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
- 16.8
-
mV/°C
VGE = 0 V, VCE = 600 V
-
0.6
100
μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
0.15
3
mA
IF = 40 A, VGE = 0 V
-
1.78
2.21
IF = 40 A, VGE = 0 V, TJ = 125 °C
-
1.39
1.74
VGE = ± 20 V
-
-
± 200
nA
MIN.
TYP.
MAX.
UNITS
-
0.35
-
-
2.08
-
-
2.43
-
-
0.41
-
-
2.83
-
-
3.24
-
-
162
-
-
55
-
td(off)
-
150
-
tf
-
129
-
VBR(CES)
VCE(on)
VGE(th)
VGE(th)/TJ
ICES
VFM
IGES
TEST CONDITIONS
UNITS
V
VCE = VGE, IC = 250 μA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
tr
RBSOA
mJ
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
ns
TJ = 175 °C, IC = 350 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V, L = 500 μH
Fullsquare
61
85
ns
-
4
7
A
Qrr
-
120
297
nC
trr
-
133
154
ns
-
12
15
A
-
750
1150
nC
trr
Diode peak reverse current
Irr
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Revision: 10-Jun-13
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
-
Diode reverse recovery time
Short circuit safe operating area
TEST CONDITIONS
SCSOA
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs, 
VR = 200 V, TJ = 125 °C
TJ = 175 °C, Rg = 22 ,
VGE = 15 V to 0 V, VCC = 400 V,
Vp = 600 V
3
μs
Document Number: 93185
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 40
-
175
°C
-
-
0.26
-
-
0.73
-
0.05
-
Mounting torque, 6-32 or M3 screw
-
-
1.3
Nm
Weight
-
30
-
g
Maximum junction and storage temperature range
IGBT
Junction to case
RthJC
Diode
RthCS
300
180
275
160
250
140
225
TJ = 125 °C
200
120
100
IC (A)
Allowable Case Temperature (°C)
Case to sink per module
°C/W
80
175
TJ = 25 °C
150
TJ = 175 °C
125
100
60
75
40
50
20
25
0
0
0
20
40
60
80 100 120 140 160 180 200
IC - Continuous Collector Current (A)
93185_01
0
1.0
1.5
100
10
1
0.1
2.5
3.0
3.5
4.0
Fig. 3 - Typical IGBT Collector Current Characteristics
VGE = 15 V
Allowable Case Temperature (°C)
1000
2.0
VCE (V)
93185_02
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
IC (A)
0.5
180
160
140
120
100
0.01
80
60
40
20
0
1
10
100
VCE (V)
93185_02
Fig. 2 - IGBT Reverse Bias SOA
TJ = 175 °C, VGE = 15 V
Revision: 10-Jun-13
0
1000
93185_04
20
40
60
80
100
120
IF - Continuous Forward Current (A)
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
Document Number: 93185
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200
2.5
175
150
TJ = 175 °C
100
2.0
100 A
1.5
50 A
VCE (V)
IF (A)
125
TJ = 125 °C
75
50
TJ = 25 °C
27 A
25
0
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
VFM (V)
93185_05
20
140
180
TJ (°C)
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
10
3.0
1
2.5
TJ = 175 °C
Energy (mJ)
0.1
ICES (mA)
100
93185_08
Fig. 5 - Typical Diode Forward Characteristics
TJ = 125 °C
0.01
0.001
TJ = 25 °C
0.0001
0.00001
100
2.0
Eoff
1.5
1.0
0.5
Eon
0
200
300
400
500
600
VCES (V)
93185_06
10
30
50
70
90
110
IC (A)
93185_09
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
5.0
1000
tf
TJ = 25 °C
Switching Time (ns)
4.5
Vgeth (V)
60
4.0
3.5
td(off)
td(on)
100
3.0
tr
TJ = 125 °C
2.5
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
IC (mA)
93185_07
Fig. 7 - Typical IGBT Threshold Voltage
Revision: 10-Jun-13
1.0
0
93185_10
20
40
60
80
100
120
IC (A)
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V
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Vishay Semiconductors
190
6
170
5
150
Energy (mJ)
4
TJ = 125 °C
130
trr (ns)
Eoff
3
2
110
90
Eon
TJ = 25 °C
70
1
50
0
0
10
20
30
40
30
100
50
Rg (Ω)
93185_11
1000
dIF/dt (A/μs)
93185_13
Fig. 13 - Typical trr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 360 V, VGE = 15 V
30
1000
td(on)
20
Irr (A)
Switching Time (ns)
25
td(off)
tf
100
tr
TJ = 125 °C
15
10
TJ = 25 °C
5
10
0
10
20
30
40
0
100
50
Rg (Ω)
93185_12
1000
dIF/dt (A/μs)
93185_14
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 360 V,
IC = 100 A, VGE = 15 V
Fig. 14 - Typical Irr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
1400
1200
Qrr (nC)
1000
TJ = 125 °C
800
600
400
TJ = 25 °C
200
0
100
93185_15
1000
dIF/dt (A/μs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
Revision: 10-Jun-13
Document Number: 93185
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Vishay Semiconductors
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
93185_16
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.1
0.01
0.001
0.00001
93185_17
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
Revision: 10-Jun-13
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R=
L
D.U.T.
VCC
ICM
VC *
50 V
1000 V
D.U.T.
1
2
+
-V
CC
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 18a - Clamped Inductive Load Test Circuit
Fig. 18b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
- +
-5V
+
VCC
D.U.T./
driver
Rg
Fig. 19a - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
td(off)
10 %
IC
5%
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff)
Fig. 19b - Switching Loss Waveforms Test Circuit
Revision: 10-Jun-13
Document Number: 93185
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ORDERING INFORMATION TABLE
Device code
G
T
100
D
A
60
U
1
2
3
4
5
6
7
1
-
Insulated Gate Bipolar Transistor (IGBT)
2
-
T = Trench IGBT technology
3
-
Current rating (100 = 100 A)
4
-
Circuit configuration (D = Single switch with antiparallel diode)
5
-
Package indicator (A = SOT-227)
6
-
Voltage rating (60 = 600 V)
7
-
Speed/type (U = Ultrafast)
CIRCUIT CONFIGURATION
3 (C)
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
Revision: 10-Jun-13
Document Number: 93185
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Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A3
4
6.25 (0.246)
12.50 (0.492)
25.70 (1.012)
25.20 (0.992)
-B-
1
2
R full
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
-C-
12.30 (0.484)
11.80 (0.464)
0.12 (0.005)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
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1
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000