GB75SA120UP
Vishay High Power Products
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
FEATURES
•
•
•
•
•
•
•
•
SOT-227
NPT Generation V IGBT technology
Square RBSOA
Positive VCE(on) temperature coefficient
Fully isolated package
Speed 8 kHz to 60 kHz
Very low internal inductance (≤ 5 nH typical)
Industry standard outline
Compliant to RoHS directive 2002/95/EC
BENEFITS
PRODUCT SUMMARY
VCES
1200 V
IC DC
75 A at 95 °C
VCE(on) typical at 75 A, 25 °C
3.3 V
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
TEST CONDITIONS
MAX.
UNITS
1200
V
TC = 25 °C
131
TC = 80 °C
89
A
Pulsed collector current
ICM
200
Clamped inductive load current
ILM
200
Gate to emitter voltage
VGE
± 20
Power dissipation
PD
Isolation voltage
VISOL
TC = 25 °C
658
TC = 80 °C
369
Any terminal to case, t = 1 min
2500
V
W
V
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of
threshold voltage
Collector to emitter leakage current
Gate to emitter leakage current
Document Number: 93124
Revision: 20-Nov-09
SYMBOL
VBR(CES)
VCE(on)
VGE(th)
VGE(th)/ΔTJ
ICES
IGES
TEST CONDITIONS
MIN.
TYP.
MAX.
VGE = 0 V, IC = 250 μA
1200
-
-
VGE = 15 V, IC = 75 A
-
3.3
3.8
VGE = 15 V, IC = 75 A, TJ = 125 °C
-
3.6
3.9
VCE = VGE, IC = 250 μA
4
5
6
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
- 12
-
mV/°C
VGE = 0 V, VCE = 1200 V
-
3
250
μA
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
-
4
20
mA
VGE = ± 20 V
-
-
± 200
nA
For technical questions, contact: indmodules@vishay.com
UNITS
V
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GB75SA120UP
Vishay High Power Products Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
-
690
-
-
65
-
-
250
-
-
1.53
-
-
1.76
-
-
3.29
-
-
2.49
-
-
3.45
-
-
5.94
-
-
281
-
-
45
-
td(off)
-
300
-
tf
-
126
-
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
tr
TEST CONDITIONS
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5 Ω,
L = 500 μH
UNITS
nC
mJ
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5 Ω,
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
ns
RBSOA
TJ = 150 °C, IC = 200 A, Rg = 22 Ω,
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V, L = 500 μH
Fullsquare
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 40
-
150
°C
Junction to case
RthJC
-
-
0.19
Case to sink per module
RthCS
-
0.05
-
Mounting torque, 6-32 or M3 screw
-
-
1.3
Nm
Weight
-
30
-
g
Maximum junction and storage
temperature range
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2
°C/W
For technical questions, contact: indmodules@vishay.com
Document Number: 93124
Revision: 20-Nov-09
GB75SA120UP
160
10
140
TJ = 125 °C
1
120
100
ICES (mA)
Allowable Case Temperature (°C)
Insulated Gate Bipolar Transistor Vishay High Power Products
(Ultrafast IGBT), 75 A
80
60
0.1
0.01
40
TJ = 25 °C
0.001
20
0.0001
0
0
20
40
60
80
100
120
140
IC - Continuous Collector Current (A)
93124_01
0
200
400
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
600
800
1000
1200
VCES (V)
93124_04
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
1000
6.0
5.5
100
TJ = 25 °C
IC (A)
Vgeth (V)
5.0
10
4.5
TJ = 125 °C
4.0
3.5
1
10
100
1000
VCE (V)
93124_02
3.0
0.0002
10 000
0.0004
0.0006
0.0008
0.001
IC (mA)
93124_05
Fig. 2 - IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V
Fig. 5 - Typical IGBT Threshold Voltage
200
4.5
100 A
4.0
150
75 A
VCE (V)
IC (A)
TJ = 25 °C
100
3.5
3.0
TJ = 125 °C
50
27 A
2.5
2.0
0
0
1
93124_03
2
3
4
5
6
VCE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
Document Number: 93124
Revision: 20-Nov-09
25
50
93124_06
75
100
125
150
TJ (°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
For technical questions, contact: indmodules@vishay.com
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3
GB75SA120UP
Vishay High Power Products Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
4.0
14
3.5
12
Eon
10
Energy (mJ)
Energy (mJ)
3.0
2.5
Eoff
2.0
1.5
Eon
8
Eoff
6
4
1.0
2
0.5
0
0
10
20
30
40
50
60
70
80
0
IC (A)
93124_07
20
30
40
50
RG (Ω)
Fig. 9 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 75 A, L = 500 μH,
VCC = 600 V, VGE = 15 V
Fig. 7 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 Ω, VGE = 15 V
1000
10 000
td(off)
Switching Time (μs)
Switching Time (μs)
10
93124_09
td(on)
tf
100
tr
10
td(on)
1000
td(off)
tf
100
tr
10
0
20
40
60
80
0
IC (A)
93124_08
10
30
40
50
RG (Ω)
93124_10
Fig. 8 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 Ω, VGE = 15 V
20
Fig. 10 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 Ω, VGE = 15 V
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.01
0.001
0.0001
0.00001
93124_11
Single pulse
(thermal response)
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
0.1
1
Rectangular Pulse Duration (t1)
Fig. 11 - Maximum Thermal Impedance ZthJC Characteristics
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For technical questions, contact: indmodules@vishay.com
Document Number: 93124
Revision: 20-Nov-09
GB75SA120UP
Insulated Gate Bipolar Transistor Vishay High Power Products
(Ultrafast IGBT), 75 A
R=
L
D.U.T.
VCC
ICM
VC *
50 V
1000 V
D.U.T.
1
2
+
-V
CC
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 12a - Clamped Inductive Load Test Circuit
Fig. 12b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
- +
-5V
+
VCC
D.U.T./
driver
Rg
Fig. 13a - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
td(off)
10 %
IC
5%
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff)
Fig. 13b - Switching Loss Waveforms Test Circuit
Document Number: 93124
Revision: 20-Nov-09
For technical questions, contact: indmodules@vishay.com
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5
GB75SA120UP
Vishay High Power Products Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
ORDERING INFORMATION TABLE
Device code
G
B
75
S
A
120
U
P
1
2
3
4
5
6
7
8
1
-
Insulated Gate Bipolar Transistor (IGBT)
2
-
B = IGBT Generation 5
3
-
Current rating (75 = 75 A)
4
-
Circuit configuration (S = Single switch without antiparallel diode)
5
-
Package indicator (A = SOT-227)
6
-
Voltage rating (120 = 1200 V)
7
-
Speed/type (U = Ultrafast IGBT)
8
-
Totally lead (Pb)-free
CIRCUIT CONFIGURATION
3 (C)
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
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For technical questions, contact: indmodules@vishay.com
Document Number: 93124
Revision: 20-Nov-09
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Vishay
Disclaimer
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disclosure relating to any product.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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