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Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology
temperature coefficient
with
positive
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft reverse
recovery
SOT-227
• TJ maximum = 150 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
1200 V
IC DC
100 A at 119 °C
VCE(on) typical at 100 A, 25 °C
1.73 V
Package
SOT-227
Circuit
Single Switch Diode
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Very low VCE(on)
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
1200
V
Collector to emitter voltage
VCES
Continuous collector current
IC (1)
Pulsed collector current
ICM
450
Clamped inductive load current
ILM
450
Diode continuous forward current
IF
TC = 25 °C
258
TC = 80 °C
174
TC = 25 °C
50
TC = 80 °C
34
Peak diode forward current
IFSM
180
Gate to emitter voltage
VGE
± 20
Power dissipation, IGBT
PD
Power dissipation, diode
Isolation voltage
PD
VISOL
TC = 25 °C
893
TC = 119 °C
221
TC = 25 °C
176
TC = 119 °C
Any terminal to case, t = 1 min
A
V
W
44
2500
V
Note
(1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
Revision: 13-Sep-13
Document Number: 93196
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of
threshold voltage
Collector to emitter leakage current
Forward voltage drop
Gate to emitter leakage current
SYMBOL
MIN.
TYP.
MAX.
VGE = 0 V, IC = 250 μA
1200
-
-
VGE = 15 V, IC = 100 A
-
1.73
2.1
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
1.98
2.2
4.9
5.9
7.9
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
-17.6
-
mV/°C
VGE = 0 V, VCE = 1200 V
-
0.6
100
μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
0.6
10
mA
IF = 40 A, VGE = 0 V
-
2.81
3.3
IF = 40 A, VGE = 0 V, TJ = 125 °C
-
3.07
3.4
VGE = ± 20 V
-
-
± 200
nA
MIN.
TYP.
MAX.
UNITS
-
5.2
-
-
7.1
-
-
12.3
-
-
6.1
-
-
9.8
-
-
15.9
-
-
350
-
-
75
-
td(off)
-
374
-
tf
-
493
-
VBR(CES)
VCE(on)
VGE(th)
VGE(th)/TJ
ICES
VFM
IGES
TEST CONDITIONS
UNITS
V
VCE = VGE, IC = 7.5 mA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
tr
RBSOA
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Short circuit safe operating area
Revision: 13-Sep-13
SCSOA
TEST CONDITIONS
IC = 100 A, VCC = 720 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
mJ
IC = 100 A, VCC = 720 V,
VGE = 15 V, Rg = 5  
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 20)
ns
TJ = 150 °C, IC = 450 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V
IF = 50 A, dIF/dt = 200 A/μs, 
Vrr = 400 V, TJ = 125 °C
TJ = 150 °C, Rg = 22 ,
VGE = 15 V to 0 V, VCC = 900 V,
Vp = 1200 V
Fullsquare
-
164
194
ns
-
12
15
A
-
994
1455
nC
-
230
273
ns
-
16.5
20
A
-
1864
2730
nC
10
μs
Document Number: 93196
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range
IGBT
Junction to case
TEST CONDITIONS
TJ, TStg
RthJC
Diode
Case to heatsink
RthCS
Flat, greased surface
Weight
Mounting torque
MAX.
UNITS
-
150
°C
-
-
0.14
-
-
0.71
-
0.1
-
-
30
-
g
-
-
1.3
Nm
°C/W
300
160
275
140
250
IGBT DC
225
120
TJ = 125 °C
200
100
80
60
175
TJ = 150 °C
150
TJ = 25 °C
125
100
75
40
50
20
25
0
0
0
40
80
120
160
200
240
280
IC - Continuous Collector Current (A)
93196_01
0
100
10
1
0.1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
VGE = 15 V
Allowable Case Temperature (°C)
1000
0.5
93196_03
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
IC (A)
TYP.
-40
SOT-227
IC (A)
Allowable Case Temperature (°C)
Case style
MIN.
180
160
140
120
Diode DC
100
0.01
80
60
40
20
0
1
10
100
1000
VCE (V)
93196_02
Fig. 2 - IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V
Revision: 13-Sep-13
0
10 000
93196_04
10
20
30
40
50
60
IF - Continuous Forward Current (A)
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
Document Number: 93196
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Vishay Semiconductors
200
2.75
175
2.50
TJ = 150 °C
150
150 A
2.25
VCE (V)
IF (A)
125
TJ = 25 °C
100
TJ = 125 °C
75
100 A
2.00
1.75
50 A
1.50
50
25
1.25
0
1.00
27 A
0
1
2
3
4
5
6
7
VFM (V)
93196_05
20
60
80
100
120
140
160
TJ (°C)
93196_08
Fig. 5 - Typical Diode Forward Characteristics
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
10
11
TJ = 150 °C
10
1
9
TJ = 125 °C
8
Energy (mJ)
0.1
ICES (mA)
40
0.01
0.001
7
Eoff
6
5
Eon
4
TJ = 25 °C
3
0.0001
2
0.00001
100
1
300
500
700
900
1100
1300
VCES (V)
93196_06
20
30
40
50
60
70
80
90
100 110
IC (A)
93196_09
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 720 V,
Rg = 5 , VGE = 15 V
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
6.0
1000
tf
5.5
td(off)
Switching Time (ns)
TJ = 25 °C
Vgeth (V)
5.0
4.5
TJ = 125 °C
4.0
td(on)
100
tr
3.5
3.0
10
0
1
2
3
4
5
6
7
IC (mA)
93196_07
Fig. 7 - Typical IGBT Threshold Voltage
Revision: 13-Sep-13
8
20
93196_10
30
40
50
60
70
80
90
100 110
IC (A)
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 720 V,
Rg = 5 , VGE = 15 V
Document Number: 93196
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Vishay Semiconductors
310
40
290
35
270
250
Energy (mJ)
30
230
trr (ns)
25
Eon
20
TJ = 125 °C
210
190
170
15
150
10
TJ = 25 °C
130
Eoff
110
5
0
10
20
30
40
90
100
50
Rg (Ω)
93196_11
1000
dIF/dt (A/μs)
93196_13
Fig. 13 - Typical trr Diode vs. dIF/dt
Vrr = 400 V, IF = 50 A
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 720 V, VGE = 15 V
45
10 000
td(on)
35
td(off)
1000
30
tf
Irr (A)
Switching Time (ns)
40
tr
100
TJ = 125 °C
25
20
15
TJ = 25 °C
10
5
10
0
10
20
30
40
0
100
50
Rg (Ω)
93196_12
1000
dIF/dt (A/μs)
93196_14
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 720 V,
IC = 100 A, VGE = 15 V
Fig. 14 - Typical Irr Diode vs. dIF/dt
Vrr = 400 V, IF = 50 A
3000
2500
TJ = 125 °C
Qrr (nC)
2000
1500
1000
TJ = 25 °C
500
0
100
93196_15
1000
dIF/dt (A/μs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt
Vrr = 400 V, IF = 50 A
Revision: 13-Sep-13
Document Number: 93196
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
93196_16
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
93196_17
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
Revision: 13-Sep-13
Document Number: 93196
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Vishay Semiconductors
R=
L
D.U.T.
VCC
ICM
VC *
50 V
1000 V
D.U.T.
1
2
+
-V
CC
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 18a - Clamped Inductive Load Test Circuit
Fig. 18b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
- +
-5V
+
VCC
D.U.T./
driver
Rg
Fig. 19a - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
td(off)
10 %
IC
5%
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff)
Fig. 19b - Switching Loss Waveforms Test Circuit
Revision: 13-Sep-13
Document Number: 93196
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Not Available for New Designs, Use VS-GT175DA120U
VS-GT100DA120U
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
G
T
100
D
A
120
U
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Insulated Gate Bipolar Transistor (IGBT)
3
-
T = Trench IGBT technology
4
-
Current rating (100 = 100 A)
5
-
Circuit configuration (D = Single switch with antiparallel diode)
6
-
Package indicator (A = SOT-227)
7
-
Voltage rating (120 = 1200 V)
8
-
Speed/type (U = Ultrafast)
CIRCUIT CONFIGURATION
3 (C)
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
Revision: 13-Sep-13
Document Number: 93196
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A3
4
6.25 (0.246)
12.50 (0.492)
25.70 (1.012)
25.20 (0.992)
-B-
1
2
R full
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
-C-
12.30 (0.484)
11.80 (0.464)
0.12 (0.005)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000