GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology
temperature coefficient
with
positive
• Square RBSOA
• 3 μs short circuit capability
• FRED Pt® antiparallel diodes with ultrasoft reverse
recovery
SOT-227
• TJ maximum = 175 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
VCES
600 V
IC DC
100 A at 117 °C
VCE(on) typical at 100 A, 25 °C
1.72 V
IF DC
100 A at 25 °C
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC (1)
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
TEST CONDITIONS
IF
MAX.
UNITS
600
V
TC = 25 °C
184
TC = 80 °C
137
350
350
TC = 25 °C
100
TC = 80 °C
71
Peak diode forward current
IFSM
200
Gate to emitter voltage
VGE
± 20
Power dissipation, IGBT
PD
Power dissipation, diode
PD
Isolation voltage
VISOL
TC = 25 °C
577
TC = 117 °C
223
TC = 25 °C
205
TC = 117 °C
79
Any terminal to case, t = 1 min
2500
A
V
W
V
Note
(1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
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1
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
VBR(CES)
VCE(on)
VGE(th)
Temperature coefficient of
threshold voltage
VGE(th)/TJ
Collector to emitter leakage current
Forward voltage drop
ICES
VFM
Gate to emitter leakage current
IGES
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
VGE = 0 V, IC = 250 μA
600
-
-
VGE = 15 V, IC = 100 A
-
1.72
2.0
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
2.0
2.2
3.5
4.6
6.5
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
- 16.8
-
mV/°C
VGE = 0 V, VCE = 600 V
-
0.6
100
μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
0.15
3
mA
IF = 40 A, VGE = 0 V
-
1.78
2.21
IF = 40 A, VGE = 0 V, TJ = 125 °C
-
1.39
1.74
VGE = ± 20 V
-
-
± 200
nA
MIN.
TYP.
MAX.
UNITS
-
0.35
-
-
2.08
-
-
2.43
-
-
0.41
-
-
2.83
-
-
3.24
-
-
162
-
-
55
-
-
150
-
-
129
-
V
VCE = VGE, IC = 250 μA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
mJ
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
ns
td(off)
Fall time
tf
Reverse bias safe operating area
RBSOA
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Short circuit safe operating area
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TEST CONDITIONS
SCSOA
TJ = 175 °C, IC = 350 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
Fullsquare
-
61
85
ns
-
4
7
A
-
120
297
nC
-
133
154
ns
-
12
15
A
-
750
1150
nC
TJ = 175 °C, Rg = 22 ,
VGE = 15 V to 0 V, VCC = 400 V,
Vp = 600 V
For technical questions within your region, please contact one of the following:
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3
μs
Document Number: 93185
Revision: 22-Jul-10
GT100DA60U
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 40
-
175
°C
-
-
0.26
-
-
0.73
-
0.05
-
Maximum junction and storage temperature range
IGBT
Junction to case
RthJC
Diode
Case to sink per module
RthCS
°C/W
-
-
1.3
Nm
Weight
-
30
-
g
300
180
275
160
250
140
225
TJ = 125 °C
200
120
100
IC (A)
Allowable Case Temperature (°C)
Mounting torque, 6-32 or M3 screw
80
175
TJ = 25 °C
150
TJ = 175 °C
125
100
60
75
40
50
20
25
0
0
0
20
40
60
80 100 120 140 160 180 200
IC - Continuous Collector Current (A)
93185_01
0
1.0
1.5
100
10
1
0.1
2.5
3.0
3.5
4.0
Fig. 3 - Typical IGBT Collector Current Characteristics
VGE = 15 V
Allowable Case Temperature (°C)
1000
2.0
VCE (V)
93185_02
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
IC (A)
0.5
180
160
140
120
100
0.01
80
60
40
20
0
1
10
100
VCE (V)
93185_02
Fig. 2 - IGBT Reverse Bias SOA
TJ = 175 °C, VGE = 15 V
Document Number: 93185
Revision: 22-Jul-10
0
1000
93185_04
20
40
60
80
100
120
IF - Continuous Forward Current (A)
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
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3
GT100DA60U
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
Vishay Semiconductors
200
2.5
175
150
TJ = 175 °C
100
2.0
100 A
1.5
50 A
VCE (V)
IF (A)
125
TJ = 125 °C
75
50
TJ = 25 °C
27 A
25
0
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
VFM (V)
93185_05
20
10
140
180
3.0
1
2.5
TJ = 175 °C
Energy (mJ)
0.1
ICES (mA)
100
TJ (°C)
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
Fig. 5 - Typical Diode Forward Characteristics
TJ = 125 °C
0.01
0.001
TJ = 25 °C
0.0001
0.00001
100
2.0
Eoff
1.5
1.0
0.5
Eon
0
200
300
400
500
600
VCES (V)
93185_06
10
30
50
70
90
110
IC (A)
93185_09
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
5.0
1000
tf
TJ = 25 °C
Switching Time (ns)
4.5
Vgeth (V)
60
93185_08
4.0
3.5
td(off)
td(on)
100
3.0
tr
TJ = 125 °C
2.5
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
IC (mA)
93185_07
Fig. 7 - Typical IGBT Threshold Voltage
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1.0
0
93185_10
20
40
60
80
100
120
IC (A)
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93185
Revision: 22-Jul-10
GT100DA60U
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
Vishay Semiconductors
190
6
170
5
150
Energy (mJ)
4
TJ = 125 °C
130
trr (ns)
Eoff
3
2
110
90
Eon
TJ = 25 °C
70
1
50
0
0
10
20
30
40
30
100
50
Rg (Ω)
93185_11
1000
dIF/dt (A/μs)
93185_13
Fig. 13 - Typical trr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 360 V, VGE = 15 V
30
1000
td(on)
td(off)
20
Irr (A)
Switching Time (ns)
25
tf
100
tr
TJ = 125 °C
15
10
TJ = 25 °C
5
10
0
10
20
30
40
0
100
50
Rg (Ω)
93185_12
1000
dIF/dt (A/μs)
93185_14
Fig. 14 - Typical Irr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 360 V,
IC = 100 A, VGE = 15 V
1400
1200
Qrr (nC)
1000
TJ = 125 °C
800
600
400
TJ = 25 °C
200
0
100
93185_15
1000
dIF/dt (A/μs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt
Vrr = 200 V, IF = 50 A
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
93185_16
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.1
0.01
0.001
0.00001
93185_17
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
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Document Number: 93185
Revision: 22-Jul-10
GT100DA60U
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
Vishay Semiconductors
R=
L
D.U.T.
VCC
ICM
VC *
50 V
1000 V
D.U.T.
1
2
+
-V
CC
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 18a - Clamped Inductive Load Test Circuit
Fig. 18b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
- +
-5V
+
VCC
D.U.T./
driver
Rg
Fig. 19a - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
td(off)
10 %
IC
5%
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff)
Fig. 19b - Switching Loss Waveforms Test Circuit
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7
GT100DA60U
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
G
T
100
D
A
60
U
1
2
3
4
5
6
7
1
-
Insulated Gate Bipolar Transistor (IGBT)
2
-
T = Trench IGBT technology
3
-
Current rating (100 = 100 A)
4
-
Circuit configuration (D = Single switch with antiparallel diode)
5
-
Package indicator (A = SOT-227)
6
-
Voltage rating (60 = 600 V)
7
-
Speed/type (U = Ultrafast)
CIRCUIT CONFIGURATION
3 (C)
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
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For technical questions within your region, please contact one of the following:
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Document Number: 93185
Revision: 22-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A3
4
6.25 (0.246)
12.50 (0.492)
25.70 (1.012)
25.20 (0.992)
-B-
1
2
R full
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
-C-
12.30 (0.484)
11.80 (0.464)
0.12 (0.005)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
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Vishay
Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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