TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Applications
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Communications
Electronic Warfare
Test Instrumentation
EMC Amplifier
Product Features
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Functional Block Diagram
Frequency Range: 2.5 to 6 GHz
PSAT: 46.5 dBm @ PIN = 26dBm, CW
PAE: 36%
Small Signal Gain: 29 dB
Bias: VD = 30 V, IDQ = 1.55 A, VG = −2.5 V Typical
Dimensions: 11.4 x 17.3 x 3.0 mm.
General Description
Pin Configuration
TriQuint’s TGA2576-2-FL is a wideband power amplifier
fabricated on TriQuint’s proven 0.25um GaN on SiC
production technology. Operating from 2.5 to 6 GHz, the
TGA2576-2-FL achieves 40W of saturated output power,
greater than 36% power-added efficiency and 29dB
small signal gain.
For ideal thermal management and handling, the
TGA2576-2-FL is offered in a CuW-based flanged
packaged and can operate in both CW and pulsed
modes.
Pin No.
Symbol
1, 5
2, 4, 7, 9
3
6, 10
8
VG
N/C
RF IN
VD
RF OUT
Both RF ports are fully matched to 50Ω, the TGA2576-2FL is ideally suited to support a variety of commercial
and defense related applications.
Lead-free and RoHS compliant
Ordering Information
Part
Evaluation Boards are available up on request.
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
ECCN
TGA2576-2-FL 3A001.b.2.a
- 1 of 11 -
Description
2.5 to 6GHz 40W GaN PA
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Recommended Operating Conditions
Value
Drain Voltage (VD)
40 V
Gate Voltage (VG)
−5 to 0 V
Drain Current (ID)
5000 mA
Gate Current (IG)
−18 to 35 mA
Power Dissipation (PDISS)
93 W
RF Input Power, CW, 50 Ω, T = 25°C
28 dBm
Channel tremperature (TCH)
275°C
Mounting Temperature
(30 Seconds)
Storage Temperature
Parameter
Value
Drain Voltage (VD)
Drain Current (IDQ)
Drain Current Under RF Drive (ID_DRIVE)
Gate Voltage (VG)
30 V
1550 mA
4300 mA
-2.5 V
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all operating
conditions.
260°C
−40 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25°C, VD = 30 V, IDQ = 1550 mA, VG = −2.5 V Typical, CW
Parameter
Operational Frequency Range
Small Signal Gain
Output Power at Saturation (Pin = 26 dBm)
Power-Added Efficiency (Pin = 26 dBm)
Gain Temperature Coefficient
Power Temperature Coefficient
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
Min
Typical
2.5
29
46.5
36 (Mid-band)
-0.02
-0.02
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Max
Units
6
GHz
dB
dBm
%
dB/°C
dBm/°C
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
(1)
Thermal Resistance (θJC)
Channel Temperature Under RF Drive (T CH)
Median Lifetime Under RF Drive (TM)
TBASE = 85°C
Value
Units
2.04
224
ºC/W
°C
VD = 30 V, ID_Drive = 3600 mA, POUT =
46 dBm, PDISS = 68 W
1.69 x 10^6
Hours
Notes:
1. Measured from junction to center of package backside.
Median Lifetime
Test Conditions: VD = 40V; Failure Criteria is 10% reduction in ID_MAX
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
- 3 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Typical Performance
Conditions unless otherwise specified: VD = 30V, IDQ = 1.55A, VG = -2.5V Typical, CW
Gain vs. Frequency vs. Temperature
35
30
S21 (dB)
25
20
15
10
-40C
+25C
5
+85C
0
2
3
4
5
6
7
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
Output Return Loss vs. Freq. vs. Temp.
0
-5
-5
-10
-10
S22 (dB)
S11 (dB)
0
-15
-20
-15
-40C
+25C
-20
+85C
-40C
-25
-25
+25C
+85C
-30
-30
2
3
4
5
6
7
2
3
4
Frequency (GHz)
PIN = 26dBm
54
46
45
PAE (%)
POUT (dBm)
PIN = 26dBm
44
42
36
27
18
-40C
+25C
38
7
63
48
40
6
PAE vs. Frequency vs. Temperature
Power vs. Frequency vs. Temperature
50
5
Frequency (GHz)
-40C
+25C
9
+85C
+85C
36
0
2.5
3
3.5
4
4.5
5
5.5
6
2.5
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
Frequency (GHz)
- 4 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Typical Performance (con’t.)
Conditions unless otherwise specified: VD = 30V, IDQ = 1.55A, VG = -2.5V Typical, CW
48
54
48
4300
40
45
40
3600
32
36
32
2900
24
27
24
2200
16
0
8
12
16
20
24
POUT (dBm)
8
0
0
28
100
0
4
8
Input Power (dBm)
56
16
20
24
28
Power, ID vs. PIN
56
5000
Freq.= 4.0GHz
Temp.=+25°C
Freq.= 4.0GHz
48
48
4300
40
40
40
3600
32
32
32
2900
24
24
24
2200
POUT (dBm)
48
PAE (%)
POUT (dBm), Gain (dB)
Temp.=+25°C
12
Input Power (dBm)
POUT, Gain, PAE vs. PIN
56
800
16
16
POUT
Gain
PAE
8
0
0
4
8
12
16
20
24
1500
16
8
8
0
0
POUT
ID
4
8
POUT, Gain, PAE vs. PIN
Temp.=+25°C
12
16
20
24
28
Input Power (dBm)
Input Power (dBm)
56
800
100
0
28
Drain Current (mA)
4
9
POUT
ID
56
Power, ID vs. PIN
56
5000
Freq.= 6.0GHz
Temp.=+25°C
Freq.= 6.0GHz
48
4300
40
40
40
3600
32
32
32
2900
24
24
24
2200
POUT (dBm)
48
PAE (%)
48
16
16
POUT
Gain
PAE
8
0
0
4
8
12
16
20
24
8
8
0
0
28
POUT
ID
800
100
0
Input Power (dBm)
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
1500
16
Drain Current (mA)
0
1500
16
18
POUT
Gain
PAE
Freq = 2.5GHz
Temp.=+25°C
PAE (%)
Freq.= 2.5GHz
8
POUT (dBm), Gain (dB)
5000
56
Temp.=+25°C
POUT (dBm), Gain (dB)
Power, ID vs. PIN
63
Drain Current (mA)
POUT, Gain, PAE vs. PIN
56
4
8
12
16
20
24
28
Input Power (dBm)
- 5 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Typical Performance (con’t.)
Conditions unless otherwise specified: VD = 30V, IDQ = 1.55A, VG = -2.5V Typical, CW
Drain Current vs. Frequency vs. Temp.
Power vs. Frequency vs.PIN
48
4300
45
3600
42
POUT (dBm)
Drain Current (mA)
5000
2900
2200
1500
+25C
Temp.=+25°C
PIN = 26dBm
100
3
2.5GHz
4.0GHz
6.0GHz
30
+85C
2.5
36
33
-40C
800
39
3.5
4
4.5
27
5
5.5
6
0
Frequency (GHz)
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
4
8
12
16
20
24
28
Input Power (dBm)
- 6 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Application Circuit
Notes:
1. VG must be biased from both sides (Pins 1 and 5).
2. VD must be biased from both sides (Pins 6 and 10).
3. Remove caps for pulsed drain operation.
Bias-up Procedure
Bias-down Procedure
1. Set ID to 4.5A, IG to 20mA
2. VG set to −5.0V.
3. VD set to +30V.
4. Adjust VG until IDQ ~ 1550 mA ( VG ~ -2.5V Typical)
5. Turn on RF supply.
1. Turn off RF signal.
2. Reduce VG to −5.0V. Ensure IDQ ~ 0 mA.
3. Set VD to 0V.
4. Set VG to 0V.
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
- 7 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Pin Description
Pin
Symbol
Description
1, 5
VG
Gate voltage.
2, 4, 7, 9
N/C
No internal connection; may be grounded or left open on PCB.
3
RF IN
Input; matched to 50 Ω; DC shorted to ground.
6, 10
8
VD
RF OUT
(Package Base)
Bottom side Drain voltage.
Output; matched to 50 Ω; DC shorted to ground.
RF and DC ground.
(1)
(2)
Notes:
1. Bias network is required; must be biased from both sides (Pins 1 and 5); see Application Circuit on page 7 as an example.
2. Bias network is required; must be biased from both sides (Pins 6 and 10); see Application Circuit on page 7 as an example.
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
- 8 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Evaluation Board Layout
Bill of Material
Reference Des.
Value
Description
Manuf.
C1 – C4
0.1 μF
Cap, 0603, 50 V, 10%, X7R
Various
C5 – C8
1 μF
Cap, 1206, 50 V, 10%, X7R
Various
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
- 9 of 11 -
Part Number
Disclaimer: Subject to change without notice
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TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Mechanical Information – Package Information and Dimensions
Marking: Part number – TGA2576-2-FL
Year/week/lot code - YYWW ZZZ
Batch ID – MXXX
Notes:
1. Unless specified otherwise, dimensions are in millimeters (mm).
2. Unless specified otherwise, tolerances are ± 0.127
3. Materials:
Package base: Copper Tungsten (CuW) composite
Package lid:
LCD (liquid crystal polymer)
Package leads: Kovar, MIL I 23011C Class 1
Plating finish:
Gold (Au) 1.27um minimum over Nickel (Ni) 2.54 to 8.89um
Assembly Notes
1. 0-80 screws are recommended for mounting the TGA2576-2-FL to the board.
2. To improve the thermal and RF performance, we recommend the following:
a) Apply thermal compound or 4 mils indium shim between the package and the board.
b) Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim between
the heat sink and the board.
3. Apply solder to each pin of the TGA2576-2-FL.
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
- 10 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
Caution! ESD-Sensitive Device
ESD Rating: Class 1B
Value:
≥500V and <1000V
Test:
Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce: 3A001.b.2.a
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
For technical questions and application information:
+1.972.994.8465
+1.972.994.8504
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
- 11 of 11 -
Disclaimer: Subject to change without notice
www.triquint.com