TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Applications
 Small-Cell Basestations
 Enterprise Femtocell
 Bands 5, 6, 8, 12, 13, 14, 17, 20, 26, 27, 28, 29
3.5x4.5 mm Leadless SMT Package
Functional Block Diagram
Product Features

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
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






Frequency Range : 0.7-1.0 GHz
Covers multiple bands with one component
Fully integrated, 2-stage Power Amplifier
Internally matched 50 Ω input/output
-50dBc ACLR (corrected) @ +28 dBm Pavg
32 dB Gain
27% PAE @ +28 dBm Pavg
In-built Control Bias and Temp. Comp Circuit
Single Supply Voltage : 5V
Lead-free / RoHS compliant
POE Capable
RFin VPD1 VPD2 N/C N/C
13
12
11
10
9
Matching
Network
AMP1
N/C
RFout
8
7
Matching
Network
AMP2
Exposed
Backside Pad
GND
Pin 1
Reference Mark
Package Topside
1
2
VBIAS VCC
3
4
5
6
N/C
N/C
N/C
N/C
General Description
Pin Configuration
The TQP9309 is a high-efficiency two-stage power
amplifier in a low-cost surface-mount package with onchip bias control and temperature compensation
circuitry, suitable for small cell base station applications.
Pin No.
Label
1
2
3, 4, 5, 6, 8, 9, 10
7
11
12
13
Vbias
Backside Paddle
RF/DC Ground
TQP9309 provides 32 dB gain and >+28 dBm linear
power with pre-distortion correction over the 0.7-1.0 GHz
frequency range for Bands 5, 6, 8, 12, 13, 14, 17, 20, 26,
27, 28, and 29. With pre-distortion, the amplifier is able
to achieve -50dBc ACLR at 28 dBm output power using
a 20 MHz LTE signal.
The TQP9309 integrates two high performance amplifier
stages onto a module to allow for a compact system
design and requires very few external components for
operation. The amplifier is bias adjustable allowing the
amplifier’s power consumption to be optimized. The
TQP9309 is available in a lead-free/RoHS-compliant
3.5x4.5mm surface mount package and is pincompatible to the 1.8-2.2 GHz TQP9321 and 2.5-2.7
GHz TQP9326.
Vcc
GND or NC
RFout
Vpd2
Vpd1
RFin
Ordering Information
Part No.
Description
TQP9309
TQP9309-PCB
0.7-1.0 GHz Power Amplifier
Evaluation board
Standard T/R size: 2500 pcs. on a 13” reel
Datasheet: Rev E 03-25-16
© 2016 TriQuint Semiconductor, Inc
- 1 of 9 -
Disclaimer: Subject to change
www.triquint.com / www.qorvo.com
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Parameter
Storage Temperature
Supply Voltage (VCC)
RF Input Power, CW, 50Ω, T=25°C
Rating
−40 to 150°C
6V
10dBm
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Min
Typ
−40
5
25
VDD
TAMB
Tj for >106 hours MTTF
Max Units
V
°C
°C
+85
+190
Notes:
1. Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: VCC =+5V, Vpd = +5V, Temp= +25°C, Test Frequency : 900MHz
Parameter
Conditions
Operational Frequency Range
Output Channel Power
Gain
Gain Temperature Coefficient
ACLR Uncorrected
ACLR Corrected
Power Added Efficiency
Noise Figure
Output P3dB
P3dB Temperature Coefficient
Supply Voltage
Quiescent Current, ICQ
Operational Current, Icc
Min
Typ
700
700 - 800MHz
800 - 960MHz
28.6
29.6
+28
31
32
-0.026
+33.9
-37
-50
27
4
+35
-0.005
5
100
380
See note 1
See note 1
See note 1
85
VSWR Survivability
Pout = +26 dBm
Signal : WCDMA 1C, PAR = 8 dB
Thermal Resistance, θjc
Module (junction to case)
Max
Units
960
MHz
dBm
dB
dB
dB/°C
33.3
127
dBc
dBc
%
dB
dBm
dBm/°C
V
mA
mA
–
7:1
28.3
°C/W
Notes:
1. Using LTE signal, 20MHz, IBW = 18.02 MHz, PAR 7.5dB, Pout = +28 dBm
2. Items in min/max columns in bold at guaranteed by production test at 900 MHz
3. Items in min/max columns that are not a bold font are guaranteed by design characterization.
Datasheet: Rev E 03-25-16
© 2016 TriQuint Semiconductor, Inc
- 2 of 9 -
Disclaimer: Subject to change
www.triquint.com / www.qorvo.com
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Performance Plots
Gain vs. Output Power vs. Frequency
36
Temp.=+25°C
32
34
30
32
28
26
720 MHz
820 MHz
24
22
Temp.=+25°C
36
Gain (dB)
Gain (dB)
34
Gain vs. Output Power vs. Temperature
38
770 MHz
850 MHz
F = 900 MHz
30
28
+85°C
+25°C
26
−40°C
24
20
22
18
20
16
18
20
22
24
26
28
30
32
34
36
20
22
24
26
Pout (dBm)
50
45
Efficiency (%)
40
Efficiency vs. Output Power vs. Frequency
60
55
Temp.=+25°C
30
32
34
36
Efficiency vs. Output Power vs. Temperature
Temp.=+25°C
50
CW
45
Efficiency (%)
55
28
Pout (dBm)
35
30
700 MHz
770 MHz
820 MHz
850 MHz
900 MHz
960 MHz
25
20
15
10
5
40
F = 900 MHz CW
35
30
25
20
+85°C
15
+25°C
10
−40°C
5
0
0
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Pout (dBm)
Pout (dBm)
Datasheet: Rev E 03-25-16
© 2016 TriQuint Semiconductor, Inc
- 3 of 9 -
Disclaimer: Subject to change
www.triquint.com / www.qorvo.com
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Performance Plots (continued)
ACPR vs. Output Power vs. Frequency
-35
770MHz DPD
820MHz DPD
850MHz DPD
960MHz DPD
770MHz No DPD
820MHz No DPD
850MHz No DPD
960MHz No DPD
Signal : LTE 20MHz, PAR = 7.5dB
Channel BW UTRA, IBW = 3.84MHz
Vcc = 5V, Frequency : 850MHz
DPD Polynomial Order : 11
-40
-45
ACPR1(dBc)
ACPR1(dBc)
-40
ACPR vs. Output Power vs. Temperature
-35
-50
-55
-60
-45
+85°C
-50
+25°C
−40°C
-55
-60
Signal : LTE 20MHz, PAR = 7.5dB
Channel BW UTRA, IBW = 3.84MHz
DPD Polynomial Order : 11
Temp.=+25°C
-65
19
20
21
22
23
24
25
26
27
28
29
-65
30
19
20
21
22
23
Pout (dBm)
ACPR vs. Output Power vs. Frequency
-30
25
26
27
28
29
30
770MHz DPD
820MHz DPD
850MHz DPD
960MHz DPD
770MHz No DPD
820MHz No DPD
850MHz No DPD
960MHz No DPD
ACPR vs. Output Power vs. Temperature
-35
Signal : LTE 20MHz, PAR = 7.5dB
Channel BW UTRA, IBW = 18MHz
Vcc = 5V, Frequency : 850MHz
DPD Polynomial Order : 11
-40
-40
ACPR1(dBc)
ACPR1(dBc)
-35
24
Pout (dBm)
-45
-50
-45
-50
-55
+85°C
-55
Signal : LTE 20MHz, PAR = 7.5dB
Channel BW EUTRA, IBW = 18MHz
DPD Polynomial Order : 11
Temp.=+25°C
+25°C
-60
−40°C
-60
-65
19
20
21
22
23
24
25
26
27
28
29
19
20
21
22
23
Pout (dBm)
40
25
26
27
28
29
30
Efficiency vs. Output Power vs. Temperature
Signal : LTE 20MHz, PAR = 7.5dB
Channel BW UTRA, IBW = 18MHz
Vcc = 5V, Frequency : 850MHz
DPD Polynomial Order : 11
35
30
Efficiency (%)
24
Pout (dBm)
25
20
15
10
+85°C
+25°C
5
−40°C
0
19
20
21
22
23
24
25
26
27
28
29
30
Pout (dBm)
Datasheet: Rev E 03-25-16
© 2016 TriQuint Semiconductor, Inc
- 4 of 9 -
Disclaimer: Subject to change
www.triquint.com / www.qorvo.com
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Application Circuit
+5V
C7
0.1uF
J6
J1
R2
R1
J3
C7
R2
1.02K
R1
7.5K
J2
13
12
11
10
9
8
7
RF
Input
RF
Output
J1
J2
U1
R3
C3
Matching
Network
AMP2
J5
J4
C6
Matching
Network
AMP1
C5
R4
1
2
C3
4
5
6
C5
100 pF
J4
3
100 pF
R3
100 
J5
C6
+5V
R4
0
10 uF
Bill of Material
Ref Des
n/a
U1
R3, R4
R3
C7
C6
C3, C5
R2
R1
C1, C2, C4
Value
n/a
n/a
0Ω
100 Ω
0.1 uF
10 uF
100 pF
1.0 KΩ
7.5 KΩ
Datasheet: Rev E 03-25-16
© 2016 TriQuint Semiconductor, Inc
Description
Manuf.
Printed Circuit Board
Part Number
1109803
High Efficiency 2-stage PA
Resistor, Chip, 0603, 5%
Resistor, Chip, 0603, 5%, 1/16W
Capacitor, Chip, 0603, 5%
Capacitor , Chip, 6032, 10%, Tantalum
Capacitor , Chip, 0603, NPO/COG, 5%
Resistor, Chip, 0603, 5%, 1/16W
Resistor, Chip, 0603, 5%, 1/16W
Do Not Place
- 5 of 9 -
TriQuint
various
various
various
various
various
various
various
TQP9309
Disclaimer: Subject to change
www.triquint.com / www.qorvo.com
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Pin Configuration and Description
RFin VPD1 VPD2 N/C N/C
13
12
11
10
9
Matching
Network
AMP1
N/C
RFout
8
7
Matching
Network
AMP2
Exposed
Backside Pad
GND
Pin 1
Reference Mark
Package Topside
1
2
VBIAS VCC
3
4
5
6
N/C
N/C
N/C
N/C
Pin No.
Label
Description
1
2
Vbias
Vcc
3, 4, 5, 6, 8, 9, 10
GND/NC
7
RFout
11
Vpd2
12
Vpd1
13
RFin
Provides reference voltage for internal active biasing circuit
DC voltage supply connection
No internal connection. Provide grounded land pads for PCB
mounting integrity.
RF output pin. The DC is internally blocked at this pin.
Power down for Amp 1. This voltage adjusts for the current draw in
Amp 1.
Power down for Amp 2. This voltage adjusts for the current draw in
Amp 2.
RF input pin. The DC is internally blocked at this pin.
Backside Paddle
RF/DC GND
Datasheet: Rev E 03-25-16
© 2016 TriQuint Semiconductor, Inc
RF/DC ground. Use recommended via pattern to minimize
inductance and thermal resistance; see PCB Mounting Pattern for
suggested footprint.
- 6 of 9 -
Disclaimer: Subject to change
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TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Mechanical Information
Package Marking and Dimensions
Marking: Part number – 9309
Assembly Code - YYWW
Lot code –aaXXXX
2x
0.10 C
A
0.10 C
B
3.50±0.1
C
0.92±0.08
Pin #1 Locator
2.25
9309
YYWW
AaXXXX
4.50
4.50±0.1
2x
0.10 C
1.75
Top View
4.500±0.10
2.000
(1X) 0.770x X 0.340y
0.10
Side View
C A B
1.500
0.750
PIN1
(10X) 0.270x X 0.340y
0.10
C A B
1.080
(1X) 1.270x X 0.340y
0.10
2.000
C A B
1.000
1.480
1.080
0.680
3.500±0.1
(1X) shape
0.10
C A B
1.080
1.480
1.000
2.000
0.500
1.000
1.500
Bottom View
2.000
Notes:
1.
All dimensions are in millimeters. Angles are in degrees.
2.
Dimension and tolerance formats conform to ASME Y14.4M-1994.
3.
The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
Datasheet: Rev E 03-25-16
© 2016 TriQuint Semiconductor, Inc
- 7 of 9 -
Disclaimer: Subject to change
www.triquint.com / www.qorvo.com
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
PCB Mounting Pattern
Recommend PCB land-pad pattern metallization (Top View)
Recommended PCB solder mask opening (Top View)
Notes:
1. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to
the device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
Datasheet: Rev E 03-25-16
© 2016 TriQuint Semiconductor, Inc
- 8 of 9 -
Disclaimer: Subject to change
www.triquint.com / www.qorvo.com
TQP9309
High Efficiency 0.5W Small Cell Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with both lead-free (260°C maximum reflow
temperature) and tin/lead (245°C maximum reflow
temperature) soldering processes.
Caution! ESD-Sensitive Device
Contact plating: Electrolytic plated Au over Ni
ESD Rating:
Value:
Test:
Standard:
Class 2
Passes ≥ 2000V and < 4000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class C3
Passes ≥ 1000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
MSL Rating
MSL Rating: MSL3
Test:
260°C convection reflow
Standard:
JEDEC Standard IPC/JEDEC J-STD-020
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
For technical questions and application information:
Datasheet: Rev E 03-25-16
© 2016 TriQuint Semiconductor, Inc
+1.503.615.9000
+1.503.615.8902
Email: sjcapplications.engineering@triquint.com
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