HMC463LP5
v01.1104
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
AMPLIFIERS - SMT
8
Typical Applications
Features
The HMC463LP5 is ideal for:
Gain: 13 dB
• Telecom Infrastructure
Noise Figure: 2.8 dB @ 10 GHz
• Microwave Radio & VSAT
P1dB Output Power: +18 dBm @ 10 GHz
• Military EW, ECM & C3I
Supply Voltage: +5.0V @ 60 mA
• Test Instrumentation
50 Ohm Matched Input/Output
• Fiber Optics
25 mm2 Leadless Package
Functional Diagram
General Description
The HMC463LP5 is a GaAs MMIC PHEMT Low
Noise AGC Distributed Amplifier packaged in a
leadless 5 x 5 mm surface mount package which
operates between 2 and 20 GHz. The amplifier
provides 13 dB of gain, 3.0 dB noise figure and 18
dBm of output power at 1 dB gain compression
while requiring only 60 mA from a +5V supply.
An optional gate bias (Vgg2) is provided to allow
Adjustable Gain Control (AGC) of 8 dB typical.
Gain flatness is excellent at ±0.5 dB from 6 - 18
GHz making the HMC463LP5 ideal for EW, ECM
RADAR and test equipment applications. The
HMC463LP5 LNA I/Os are internally matched to
50 Ohms and are internally DC blocked.
Electrical Specifications, TA = +25° C, Vdd= 5V, Idd= 60 mA*
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
2.0 - 6.0
10
Typ.
Max.
Min.
6.0 - 18.0
13
9
12
8
Max.
GHz
11
dB
±0.5
Gain Variation Over Temperature
0.010
0.015
0.010
0.015
0.010
0.015
Noise Figure
3.0
4.0
3.0
5.0
5.5
6.5
Input Return Loss
15
13
12
dB
Output Return Loss
13
10
10
dB
16
19
11
16
±0.5
10
dB
dB/ °C
dB
12
dBm
Saturated Output Power (Psat)
21
19
19
dBm
Output Third Order Intercept (IP3)
30
24
22
dBm
Supply Current
(Idd) (Vdd= 5V, Vgg1= -0.9V Typ.)
60
60
60
mA
* Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical.
8 - 324
Units
Gain Flatness
Output Power for 1 dB Compression (P1dB)
±0.5
Typ.
18.0 - 20.0
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC463LP5
v01.1104
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
20
20
15
18
16
5
14
S21
S11
S22
0
GAIN (dB)
RESPONSE (dB)
10
-5
-10
12
10
8
-15
6
-20
4
-25
2
-30
+25C
+85C
-40C
0
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
10
12
14
16
18
20
22
8
Output Return Loss vs. Temperature
0
0
+25C
+85C
-40C
-5
OUTPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
8
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-10
-15
-20
-25
-30
+25C
+85C
-40C
-5
-10
-15
-20
0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
FREQUENCY (GHz)
0
10
9
-10
NOISE FIGURE (dB)
+25C
+85C
-40C
-25
12
14
16
18
20
22
18
20
22
+25C
+85C
-40C
8
-20
10
Noise Figure vs. Temperature
-5
-15
8
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
REVERSE ISOLATION (dB)
17 - 25 GHz
AMPLIFIERS - SMT
MMIC
PUMPED
MIXER
GainGaAs
& Return
LossSUB-HARMONICALLY Gain
vs. Temperature
-30
-35
-40
-45
7
6
5
4
3
2
-50
1
-55
-60
0
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
16
18
20
22
0
2
4
6
8
10
12
14
16
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 325
HMC463LP5
v01.1104
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
GaAs
MMIC SUB-HARMONICALLY Psat
PUMPED
MIXER
P1dB
vs. Temperature
vs. Temperature
26
26
24
24
22
22
20
20
Psat (dBm)
P1dB (dBm)
AMPLIFIERS - SMT
8
18
16
14
18
16
14
+25C
+85C
-40C
12
+25C
+85C
-40C
12
10
10
8
8
6
6
0
2
4
6
8
10
12
14
16
18
20
0
22
2
4
6
FREQUENCY (GHz)
OIP3 (dBm)
28
26
24
22
+25C
+85C
-40C
16
14
14
16
18
20
22
24
4.5
22
4
20
3.5
18
3
16
2.5
14
2
12
1.5
10
8
1
Gain
P1dB
Psat
Noise Figure
0.5
0
6
0
2
4
6
8
10
12
14
16
18
20
22
4.5
5
FREQUENCY (GHz)
Idd (mA)
Noise Figure & Supply Current
vs. Control Voltage @ 10 GHz
Gain
P1dB
75
5.5
70
5
65
4.5
60
4
55
3.5
50
3
45
2.5
40
2
35
1.5
1
30
OIP3
25
Noise Figure
Idd
0.5
0
20
0
Vgg2 (Vdc)
0.2 0.4 0.6 0.8
1
-1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
Vgg2 (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1
NOISE FIGURE (dB)
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2
5.5
Vdd (Vdc)
Gain, P1dB & Output IP3
vs. Control Voltage @ 10 GHz
GAIN (dB), P1dB (dBm), OIP3 (dBm)
12
Noise Figure (dB)
GAIN (dB), P1dB (dBm), Psat (dBm)
30
18
10
Gain, Power & Noise Figure
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
32
20
8
FREQUENCY (GHz)
Output IP3 vs. Temperature
8 - 326
17 - 25 GHz
HMC463LP5
v01.1104
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
GAIN (dB)
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
Vgg-1.3 V
Vgg=-1.2 V
Vgg=-1.1 V
Vgg=-1.0V
Vgg=-0.9 V
0
2
4
6
8
10
Vgg=-0.8 V
Vgg=-0.6 V
Vgg=-0.4 V
Vgg=-0.2 V
Vgg=0 V
12
14
16
18
20
FREQUENCY (GHz)
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)(AGC)
(Vdd -9.0)
Vdc to +2.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+23 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 50 mW/°C above 85 °C)
3.25 W
Thermal Resistance
(channel to ground paddle)
20 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
22
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+4.5
58
+5.0
60
+5.5
62
8
AMPLIFIERS - SMT
Absolute Maximum Ratings
Gain @ Several Control Voltages
%,%#42/34!4)#3%.3)4)6%$%6)#%
/"3%26%(!.$,).'02%#!54)/.3
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 327
HMC463LP5
v01.1104
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
AMPLIFIERS - SMT
8
8 - 328
Pin Descriptions
Pin Number
Function
Description
1, 3, 4, 6-14,
16-20, 22-29,
31, 32
N/C
No connection. These pins may be connected to RF ground.
Performance will not be affected.
2
Vgg2
Optional gate control if AGC is required.
Leave Vgg2 open circuited if AGC is not required.
5
RFIN
This pad is AC coupled and matched to 50 Ohms
from 2.0 - 20.0 GHz
15
Vgg1
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
21
RFOUT
This pad is AC coupled and matched to 50 Ohms
from 2.0 - 20.0 GHz
30
Vdd
Power supply voltage for the amplifier.
External bypass capacitors are required
Ground
Paddle
GND
Ground paddle must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC463LP5
v01.1104
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
8
AMPLIFIERS - SMT
Evaluation PCB
List of Materials for Evaluation PCB 108341*
Item
Description
J1 - J2
SRI K Connector
J3 - J4
2 mm Molex Header
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4 - C6
1000 pF Capacitor, 0603 Pkg.
C7 - C8
4.7 µF Capacitor, Tantalum
U1
HMC463LP5
PCB**
109949 Evaluation PCB
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB.
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of VIA holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 329