Analog Devices Welcomes
Hittite Microwave Corporation
NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
www.analog.com
www.hittite.com
THIS PAGE INTENTIONALLY LEFT BLANK
HMC605LP3 / 605LP3E
v04.1013
LOW NOISE AMPLIFIERS - SMT
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
Typical Applications
Features
The HMC605LP3 / HMC605LP3E is ideal for:
Noise Figure: 1.1 dB
• Wireless Infrastructure
Output IP3: +31 dBm
• Customer Premise Equipment
Gain: 20 dB
• Fixed Wireless
Low Loss & Failsafe Bypass Path
• WiMAX & WiBro
Single Supply: +3V or +5V
• Tower Mounted Amplifiers
50 Ohm Matched Output/Input
Functional Diagram
General Description
The HMC605LP3 / HMC605LP3E are versatile, high
dynamic range GaAs MMIC Low Noise Amplifi ers that
integrate a low loss LNA bypass path on the IC. The
amplifi er is ideal for WiBro & WiMAX receivers
operating between 2.3 and 2.7 GHz and provides 1.1
dB noise figure, 20 dB of gain and +31 dBm output IP3
from a single supply of +5V @ 74 mA. Input and output
return losses are 14 and 15 dB respectively with no
external matching components required. A single
control line (Vctl) is used to switch between LNA mode
and a low 2 dB loss bypass mode and reduces the
current consumption to 10 μA. The HMC605LP3 is
failsafe and will default to the bypass mode with no
DC power applied.
Electrical Specifications, TA = +25° C, Vdd = 5V
Parameter
LNA Mode
Min.
Frequency Range
Max.
Min.
2.3 - 2.7
Gain
17.5
Gain Variation Over Temperature
Typ.
2.3 - 2.7
20.5
-3.0
0.012
Max.
Units
GHz
-2.0
dB
0.002
dB / °C
Noise Figure
1.1
Input Return Loss
14
13
dB
Output Return Loss
15
13
dB
Reverse Isolation
33
Power for 1dB Compression (P1dB)[1]
17
14
dBm
Third Order Intercept (IP3) [2]
31
Supply Current (Idd)
74
Switching
Speed
[1]
[2]
1
Typ.
Bypass Mode
1.3
dB
dB
90
23
dBm
0.01
mA
LNA Mode to Bypass Mode
-
6.0
ns
Bypass Mode to LNA Mode
60
-
ns
P1dB and IIP3 is referenced to RFOUT for LNA mode and to RFIN for Bypass Mode.
For LNA Mode: Input tone power is -20 dBm/tone at 1 MHz tone spacing.
For Bypass Mode: Input tone power is 0dBm/tone at 1MHz tone spacing
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC605LP3 / 605LP3E
v04.1013
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
LNA Broadband Gain & Return Loss
30
GAIN (dB), P1dB (dBm)
10
S21
S11
S22
0
-10
-20
2.5
20
2
15
1.5
10
1
Gain
P1dB
5
0.5
Noise Figure
-30
0
0
-40
3
1
2
3
4
5
NOISE FIGURE (dB)
RESPONSE (dB)
20
25
3.5
6
4
4.5
5
Vdd (Vdc)
FREQUENCY (GHz)
LNA Gain vs. Temperature
LNA Noise Figure vs. Temperature
24
1.6
NOISE FIGURE (dB)
GAIN (dB)
22
20
18
+25C
+85C
-40C
16
14
2.3
2.4
2.5
2.6
1.2
0.8
+25C
-40C
+85C
0.4
0
2.3
2.7
2.4
FREQUENCY (GHz)
1.5
22
1.3
NOISE FIGURE (dBm)
GAIN (dB)
2.6
2.7
2.6
2.7
LNA Noise Figure vs. Vdd
24
20
18
+3V
+5V
16
2.4
2.5
FREQUENCY (GHz)
LNA Gain vs. Vdd
14
2.3
LOW NOISE AMPLIFIERS - SMT
LNA Gain, Noise Figure &
Power vs. Supply Voltage @ 2.5 GHz
2.5
FREQUENCY (GHz)
2.6
2.7
1.1
3V
5V
0.9
0.7
0.5
2.3
2.4
2.5
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC605LP3 / 605LP3E
v04.1013
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
LNA Output Return Loss vs. Temperature
0
-10
-15
-20
+25C
+85C
-40C
-25
-30
2.3
2.35
2.4
2.45
2.5
+25C
+85C
-40C
-10
-15
-20
-25
2.55
2.6
2.65
-30
2.3
2.7
2.35
2.4
FREQUENCY (GHz)
2.45
2.5
2.55
2.6
2.65
2.7
2.65
2.7
FREQUENCY (GHz)
LNA Output IP3 vs. Vdd
LNA Output IP3 vs. Temperature
35
40
34
35
33
OUTPUT IP3 (dBm)
32
30
IP3 (dBm)
LOW NOISE AMPLIFIERS - SMT
LNA Input Return Loss vs. Temperature
31
30
29
+25C
-40C
+85C
28
27
25
+3V
+5V
20
15
26
25
2.3
2.35
2.4
2.45
2.5
2.55
2.6
2.65
10
2.3
2.7
2.35
2.4
LNA Psat vs. Temperature
+25C
+85C
-40C
2.6
+25C
+85C
-40C
22
P1dB (dBm)
PSAT (dBm)
2.55
24
22
20
18
16
20
18
16
2.4
2.5
FREQUENCY (GHz)
3
2.5
LNA Output P1dB vs. Temperature
24
14
2.3
2.45
FREQUENCY (GHz)
FREQUENCY (GHz)
2.6
2.7
14
2.3
2.4
2.5
2.6
2.7
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC605LP3 / 605LP3E
v04.1013
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
LNA Output P1dB vs. Vdd
LNA Reverse Isolation vs. Temperature
35
ISOLATION (dB)
-10
IP3 (dBm)
30
25
+3V
+5V
20
+25C
+85C
-40C
-20
-30
15
10
2.3
2.3
2.4
2.5
2.5
2.5
2.6
2.6
-40
2.3
2.7
2.4
Bypass Mode
Broadband Gain & Return Loss
INSERTION LOSS (dB)
RESPONSE (dB)
2.7
0
-10
-20
S21
S11
S22
-30
1
2
3
4
5
-1
-2
+25C
+85C
-40C
-3
-4
-5
2.3
-40
6
2.4
Bypass Mode
Input Return Loss vs. Temperature [1]
2.6
2.7
Bypass Mode
Output Return Loss vs. Temperature [1]
0
-5
-5
RETURN LOSS (dB)
0
-10
-15
+25C
+85C
-40C
-20
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
RETURN LOSS (dB)
2.6
Bypass Mode
Insertion Loss vs. Temperature
0
-25
-30
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
LOW NOISE AMPLIFIERS - SMT
0
40
-10
-15
+25C
+85C
-40C
-20
-25
2.35
2.4
2.45
2.5
2.55
FREQUENCY (GHz)
2.6
2.65
2.7
-30
2.3
2.35
2.4
2.45
2.5
2.55
2.6
2.65
2.7
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC605LP3 / 605LP3E
v04.1013
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
Bypass Mode
Input IP3 vs. Frequency
Bypass Mode
Input P1dB vs. Frequency
5
COMPRESSION POINT (dBm)
20
25
IP3 (dBm)
LOW NOISE AMPLIFIERS - SMT
30
20
15
10
2.3
2.35
2.4
2.45
2.5
2.55
FREQUENCY (GHz)
2.6
2.65
2.7
18
16
14
12
10
2.3
2.4
2.5
2.6
2.7
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC605LP3 / 605LP3E
v04.1013
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5.0 Vdc)
Typical Supply Current vs. Vdd
+8 Vdc
LNA Mode +22 dBm
Bypass Mode +30 dBm
Vdd (Vdc)
Idd (mA)
+3.0
28
+5.0
74
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 15.85 mW/°C above 85 °C)
1.03 mW
Thermal Resistance
(channel to ground paddle)
63.08 °C/W
Storage Temperature
-65 to +150° C
LNA Mode
Vctl= Vdd + 0.3V
-40 to +100° C
Bypass Mode
Vctl= 0 + 0.3V
Operating Temperature
Truth Table
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
LOW NOISE AMPLIFIERS - SMT
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC605LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
HMC605LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
Package Marking [3]
605
XXXX
605
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC605LP3 / 605LP3E
v04.1013
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
Pin Descriptions
LOW NOISE AMPLIFIERS - SMT
Pin Number
Function
Description
1, 2, 5,
6, 8, 12
N/C
No connection necessary.
These pins may be connected to RF/DC ground.
3
RFIN
This pin is AC coupled
and matched to 50 Ohms.
4, 7, 9,
11, 15
GND
These pins must be connected to RF/DC ground.
10
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
14
Vdd
Power supply voltage. Bypass capacitors
are required. See application circuit.
16
Vctl
LNA/Bypass Mode Control Voltage. See truth table.
Interface Schematic
Application Circuit
7
Components
Value
C1, C2
100pF
C3
10KpF
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC605LP3 / 605LP3E
v04.1013
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
LOW NOISE AMPLIFIERS - SMT
Evaluation PCB
List of Materials for Evaluation PCB 117160 [1]
Item
Description
J1 - J2
PCB Mount SMA RF Connector
J3 - J6
DC Pin
C1, C2
100 pF Capacitor, 0402 Pkg.
C3
10 KpF Capacitor, 0402 Pkg.
U1
HMC605LP3 / 605LP3E Amplifier
PCB [2]
117158 Evaluation Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8