TSKS5400S
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Description
TSKS5400S is a standard GaAs infrared emitting
diode in a flat sideview molded plastic package. A
small recessed spherical lens provides high radiant
intensity in a low profile package.
The package is compatible to TEKT5400S phototransistor and TEKS5400 Photo Schmitt Trigger.
Assembled on PWB, pairs of emitters and detectors
operate as transmissive sensors and reflective sensors.
Features
•
•
•
•
High radiant intensity
Peak wavelength λP = 950 nm
Side view package with spherical lens
Angle of half sensitivity ϕ = ± 30°
14354
• Package compatible with TEKT5400S and
TEKS5400
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
e3
Parts Table
Part
TSKS5400S
Ordering code
Remarks
TSKS5400S
MOQ: 2000 pcs in Plastic Bags
TSKS5400S-ASZ
MOQ: 2000 pcs, Ammopack, 2.54 mm pin distance (lead to lead), 16 mm height of taping
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Reverse voltage
Parameter
VR
6
V
Forward current
IF
100
mA
IFSM
2
A
PV
170
mW
Surge forward current
Test condition
tp ≤ 100 µs
Power dissipation
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
450
k/W
Junction temperature
Soldering temperature
Thermal resistance junction/
ambient
Document Number 81074
Rev. 1.5, 28-Nov-06
t ≤ 5 s, 2 mm from body
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TSKS5400S
Vishay Semiconductors
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Forward voltage
IF = 100 mA, tp ≤ 20 ms
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR =0 V, f = 1 MHz, E = 0
Cj
Radiant intensity
IF = 50 mA, tp ≤ 20 ms
Ie
Radiant power
IF = 50 mA, tp ≤ 20 ms
Temp. coefficient of φe
IF = 50 mA
Typ.
Max
Unit
1.3
1.7
V
6
V
50
pF
2
7
mW/sr
φe
10
mW
TKφe
- 1.0
%K
ϕ
± 30
°
IF = 50 mA
λp
950
nm
Angle of half sensitivity
Peak wavelength
Min
Spectral bandwidth
IF = 50 mA
Δλ
50
nm
Rise time
IF = 1 A, tp/T = 0.01, tp ≤ 10 µs
tr
400
ns
Fall time
IF = 1 A, tp/T = 0.01, tp ≤ 10 µs
tf
450
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
10 4
I F - Forward Current (mA)
P V - Power Dissipation (mW)
200
150
R thJA
100
50
0
0
20
40
60
80
10 2
10 1
10 0
10 -1
100
Tamb - Ambient Temperature (°C)
14846
10 3
94 7996
Figure 1. Power Dissipation vs. Ambient Temperature
2
3
4
1.5
1.4
I F = 10 mA
100
V F - Forward Voltage
I F - Forward Current (mA)
1
V F - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
125
R thJA
75
50
25
0
0
14847
20
40
60
80
Tamb - Ambient Temperature (°C)
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1.3
1.2
1.1
1.0
0.9
0.8
-45 -30 -15
100
Figure 2. Forward Current vs. Ambient Temperature
2
0
14347
0
15
30 45 60 75 90
Tamb - Ambient Temperature (°C)
Figure 4. Forward Voltage vs. Ambient Temperature
Document Number 81074
Rev. 1.5, 28-Nov-06
TSKS5400S
Vishay Semiconductors
1.25
Φe rel - Relative Radiant Power
Ie - Radiant Intensity (mw/sr)
100
10
1
t p /T = 0.001
t p = 100 µs
0.1
0.01
10 0
10 1
10 2
10 3
0.75
0.5
0.25
IF = 100 mA
0
900
10 4
I F - Forward Current (mA)
94 7913
1.0
Figure 5. Radiant Intensity vs. Forward Current
Figure 8. Relative Radiant Power vs. Wavelength
I e rel - Relative Radiant Intensity
0°
Φ e - Radiant Power (mW)
100
10
1
1000
950
λ - Wavelength (nm)
94 7994
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.1
1
10
100
1000
I F - Forward Current (mA)
13718
Figure 6. Radiant Power vs. Forward Current
0.6
0.4
0.2
0
0.2
0.4
0.6
14349
Figure 9. Relative Radiant Intensity vs. Angular Displacement
1.6
I F = 10 mA
1.4
I e rel; Φe
rel
1.2
1.0
0.8
0.6
0.4
0.2
0.0
- 45 - 30 - 15
14348
0
15 30 45 60 75 90
Tamb - Ambient Temperature (°C)
Figure 7. Relative Radiant Intensity vs. Ambient Temperature
Document Number 81074
Rev. 1.5, 28-Nov-06
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TSKS5400S
Vishay Semiconductors
Package Dimensions in mm
14307
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Document Number 81074
Rev. 1.5, 28-Nov-06
TSKS5400S
Vishay Semiconductors
Tape and Ammopack Standards
Kennzeichnung:
Barcode–Etikett siehe 5.6.4
Labeling:
Barcode–label see 5.6.4
16716
Document Number 81074
Rev. 1.5, 28-Nov-06
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TSKS5400S
Vishay Semiconductors
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earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
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respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
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claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 81074
Rev. 1.5, 28-Nov-06
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 18-Jul-08
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