TEKT5400S
Vishay Semiconductors
Silicon NPN Phototransistor
Description
TEKT5400S is a high sensitive silicon NPN epitaxial
planar phototransistor in a flat side view plastic package.
A small recessed lens provides a high sensitivity in a
low profile case.
The molded package itself is an IR filter, spectrum
matched to IR emitters (λp > 850 nm or 950 nm).
16733
Features
Applications
•
•
•
•
•
•
•
• Detector in electronic control and drive circuits
High photo sensitivity
Daylight filter
Molded package with side view lens
e3
Angle of half sensitivity ϕ = ± 37 °
Matched with IR-Emitter TSKS5400S
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Parts Table
Part
Type differentiation
Ordering code
TEKT5400S
200 pcs in plastic bags
TEKT5400S
TEKT5400S-ASZ
2.54 mm pin distance (lead to lead), height of taping 16 mm
TEKT5400S-ASZ
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector emitter voltage
Parameter
Test condition
VCEO
70
V
Emitter collector voltage
VECO
7
V
IC
100
mA
Collector current
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
200
mA
Total power dissipation
Tamb ≤ 40 °C
Ptot
150
mW
°C
Tj
100
Storage temperature range
Tstg
- 40 to + 100
°C
Operating temperature
Tamb
- 40 to + 85
°C
Tsd
260
°C
RthJA
400
K/W
Junction temperature
Soldering temperature
Thermal resistance junction/
ambient
Document Number 81569
Rev. 1.4, 28-Nov-06
t≤5s
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TEKT5400S
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Symbol
Min
Collector emitter voltage
Parameter
IC = 1 mA
VCEO
70
Emitter collector voltage
IE = 100 µA
VECO
7
Collector dark current
VCE = 20 V, E = 0
ICEO
1
Collector-emitter capacitance
VCE = 5 V, f = 1 MHz, E = 0
CCEO
6
pF
4
mA
Collector light current
Test condition
2
ECE = 5 V, Ee = 1 mW/cm ,
λp = 950 nm
Ica
2
Symbol
Min
Typ.
Max
Unit
V
V
100
nA
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Typ.
Max
Unit
Angle of half sensitivity
ϕ
± 37
deg
Wavelength of peak sensitivity
λp
920
nm
λ0.5
850 to 980
Range of spectral bandwidth
Collector emitter saturation
voltage
Ee = 1 mW/cm , λ = 950 nm,
IC = 0.1 mA
2
VCEsat
nm
0.3
V
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω
ton
6
µs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω
toff
5
µs
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100 Ω
fc
110
kHz
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
104
180
160
RthJA
140
120
100
80
60
40
20
0
2
VCE = 10 V
102
101
20
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
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103
10
0
16719
I CEO - CollectorDark Current (nA)
Ptot - Total Power Dissipation (mW)
200
94 8249
40
60
100
80
Tamb - Ambient Temperature (°C)
Figure 2. Collector Dark Current vs. Ambient Temperature
Document Number 81569
Rev. 1.4, 28-Nov-06
TEKT5400S
Ica rel - Relative Collector Current
2.0
1.8
VCE = 5 V
Ee = 1 mW/cm2
λ = 950 nm
1.6
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
94 8239
C CEO - Collector Ermitter Capacitance (pF)
Vishay Semiconductors
20
12
8
4
0
0.1
12
ton / toff - Turn on/Turn off Time (µs)
Ica - Collector Light Current (mA)
TEKT5400S
1
0.1
V CE = 5 V
λ = 950 nm
0.01
0.01
ton
4
λ = 950 nm
Ee
=1mW/cm 2
0.5 mW/cm 2
1
0.2 mW/cm 2
0.1 mW/cm 2
0.1
0.1
1
10
0
Figure 5. Collector Light Current vs. Collector Emitter Voltage
4
8
12
16
I C - Collector Current (mA)
1.0
0.8
0.6
0.4
0.2
100
V CE - Collector Ermitter Voltage (V)
Document Number 81569
toff
2
Figure 7. Turn On/Turn Off Time vs. Collector Current
S ( λ) rel - Relative Spectral Sensitivity
10
Ica - Collector Light Current (mA)
6
94 8253
Figure 4. Relative Radiant Intensity vs. Angular Displacement
Rev. 1.4, 28-Nov-06
8
10
1
VCE = 5 V
RL = 100 Ω
λ = 950 nm
10
0
0.1
Ee - Irradiance (mW/cm 2)
16718
100
0
Figure 6. Collector Emitter Capacitance vs. Collector Emitter
Voltage
10
16707
11
V CE - Collector Ermitter Voltage (V)
94 8247
Figure 3. Relative Collector Current vs. Ambient Temperature
f = 1 MHz
16
94 8270
0
700
800
900
1000
1100
λ - Wavelength (nm)
Figure 8. Relative Spectral Sensitivity vs. Wavelength
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TEKT5400S
Vishay Semiconductors
0°
10°
20°
I e rel - Relative Radiant Intensity
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
16732
Figure 9. Relative Radiant Intensity vs.Angular Displacement
Package Dimensions in mm
16706
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Document Number 81569
Rev. 1.4, 28-Nov-06
TEKT5400S
Vishay Semiconductors
Tape and Ammopack Standards
Kennzeichnung:
Barcode–Etikett siehe 5.6.4
Labeling:
Barcode–label see 5.6.4
16716
Document Number 81569
Rev. 1.4, 28-Nov-06
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5
TEKT5400S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 81569
Rev. 1.4, 28-Nov-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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