IEEE TRANSACTIONS ON ENERGY CONVERSION, VOL. 26, NO. 3, SEPTEMBER 2011 923 Evaluation of MPP Voltage and Power of mc-Si PV Modules in Partial Shading Conditions Evagelia V. Paraskevadaki and Stavros A. Papathanassiou, Senior Member, IEEE Abstract—Photovoltaic (PV) system performance is influenced by several factors, including irradiance, temperature, shading, degradation, mismatch losses, soiling, etc. Shading of a PV array, in particular, either complete or partial, can have a significant impact on its power output and energy yield, depending on array configuration, shading pattern, and the bypass diodes incorporated in the PV modules. In this paper, the effect of partial shading on multicrystalline silicon (mc-Si) PV modules is investigated. A PV module simulation model implemented in P-Spice is first employed to quantify the effect of partial shading on the I–V curve and the maximum power point (MPP) voltage and power. Then, generalized formulae are derived, which permit accurate enough evaluation of MPP voltage and power of mc-Si PV modules, without the need to resort to detailed modeling and simulation. The equations derived are validated via experimental results. Isc,STC IRsh IRSTC IRun -sh Index Terms—Maximum power point (MPP), multicrystalline silicon (mc-Si) photovoltaic (PV) modules, partial shading, photovoltaic power systems. NG NG sh k MPP MPP1, 2 MPPT n n1 , n2 p1 , p2 , p3 , p4 NOMENCLATURE a1 , a2 as 1 , as 2 AP , BP AV , BV Area 1 Area 2 b cP 1 , cP 2 cV 1 , cV 2 IM PP,STC Iph Is 1 , Is 2 Irradiance and Temperature coefficient of Iph . Temperature coefficients for Is 1 and Is 2 . Coefficients of first-order polynomial representing cP 2 . Coefficients of first-order polynomial representing cV 2 . Low voltage region of a dual peak P–V curve. High voltage region of a dual peak P–V curve. Correction factor. Coefficients expressing dependence of MPP power on irradiance and area of shade (similar to cV 1 , cV 2 ). Coefficients of VM PP dependence on irradiance level and on area of shade. PV module MPP current at STC. PV cell photocurrent, proportional to irradiance and temperature of the PV cell. Saturation currents of diodes D1 , D2 . Manuscript received November 27, 2010; accepted February 24, 2011. Date of publication April 21, 2011; date of current version August 19, 2011. Paper no. TEC-00465-2010. The authors are with the School of Electrical and Computer Engineering, National Technical University of Athens, Athens 15773, Greece (e-mail: evaparask@yahoo.gr; st@power.ece.ntua.gr). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TEC.2011.2126021 PM AX1,2 PM PP,STC q Rs Rsh ssh STC T TR Vbr Vgap VM PP1,2 VM PP,STC w Yc ΔVD ΔPD PV module short circuit current at STC. Irradiance incident on shaded cells (W/m2 ). STC irradiance (IRSTC = 1000 W/m2 ). Irradiance incident on unshaded cells (W/m2 ). Boltzmann’s constant (k = 1.381 × 10−23 J/K). Maximum power point. Local MPP in Area 1 or 2. Maximum power point tracking. Breakdown coefficient. Ideality factors of diodes D1 , D2 (n1 = n2 = 1). Number of cell groups (i.e., bypass diodes). Number of cell groups experiencing shading. Coefficients of third-order polynomials derived for AV , BV , AP and BP . MPP power in Area 1 or 2. MPP power of the PV module under STC. Electron charge (q = 1.60217·10−19 C). Series resistance of the PV cell equivalent circuit. Shunt resistance of the PV cell equivalent circuit. Shaded area of the PV module (per unit (p.u.) of its total area). Standard test conditions: irradiance 1000 W/m2 , cell junction temperature 25 ◦ C, and reference air mass 1.5 solar spectral irradiance distribution. Absolute temperature (K). Irradiance transmittance ratio of a shade material. Breakdown voltage. Diode band gap voltage. MPP voltage in Area 1 or 2. MPP voltage of the PV module under STC. IRsh in p.u. of STC value. Generic variable for anyone of AV , BV , AP , BP . Forward voltage drop of a bypass diode. Conduction losses of a bypass diode. I. INTRODUCTION NE of the main considerations in commercial applications of photovoltaic (PV) systems is their performance under nonideal operating conditions, including operation under O 0885-8969/$26.00 © 2011 IEEE 924 IEEE TRANSACTIONS ON ENERGY CONVERSION, VOL. 26, NO. 3, SEPTEMBER 2011 reduced irradiance incident on the PV modules due to shading. Shading may occur uniformly over the whole surface of the PV generator (be it a single module, an array or a multiarray installation), or it may affect only a part of it, albeit still with a significant impact on its power and energy output. Under partial shading conditions, PV cells belonging to the same string experience different irradiance. The resulting P–V characteristic curves then deviate from their standard form, depending on the electrical characteristics of the PV modules and the shadow pattern and intensity. When PV modules with more than one bypass diodes are utilized, partial shading leads to the formation of multipeak power curves [1], which hinders the efficient maximum power point (MPP) tracking operation. The resulting energy losses, when a local instead of the global maximum is tracked, can be significant, leading to the deterioration of overall system performance. The effect of partial shading on PV module and array characteristic curves has been analyzed in several publications [2]–[4]. The effect of bypass diodes in the PV modules or the array circuit is studied in [5] and [6], where I–V and P–V curves are extracted for several PV system configurations. Simulation models suitable for the investigation of partial shading impact on PV array characteristic curves and on the overall system performance are proposed in [7]–[12]. Performance deterioration under partial shading conditions due to MPP tracking inefficiency is discussed in [13] and [14]. Output power changes of grid-connected PV systems due to moving clouds, inducing rapid changes in irradiance incident on the PV array, is studied in [15]–[17]. Methods have been proposed for improving PV system performance under partial shading conditions, mainly focusing on alterations of PV array configuration in terms of bypass diode number [18] and string connection patterns [19]. Already published work focuses mainly on understanding partial shading phenomena and their effects, as well as on their analysis using suitable PV cell electrical equivalents [20]–[23]. The issue of predicting the resulting MPP power and voltage, given the shading pattern and intensity, remains still open, although it is fundamental for evaluating PV system performance under nonideal operating conditions. Currently, to answer this question one needs to resort to detailed electrical equivalent models for the whole PV system, which is not realistic in most practical situations. Main objective of this paper, besides analyzing the effect of partial shading on PV module performance, is to provide a simple and easily applicable method for calculating shadow effects on the main electrical characteristics of a PV module. For this purpose, simple, semiempirical formulae are introduced, which provide the MPP power and voltage of multicrystalline silicon (mc-Si) PV modules. Application of the formulae requires knowledge only of basic data-sheet information and provides the power and voltage of each peak (local MPP point) of the multipeak P–V characteristic of a PV module, for any shading pattern and irradiance level, without resorting to the application of detailed electrical models and simulations. Knowledge of the basic form of the P–V curve allows direct conclusions to be drawn regarding MPP tracking (MPPT) effectiveness. The Fig. 1. Equivalent circuit of a PV cell based on the two-diode model [3]. equations derived in this paper for single PV modules also provide the basis for addressing PV strings and arrays, at a next step, in order to account more accurately for the effect of shading on the energy yield of PV installations. To derive the formulae presented in this paper, four PV modules from the PV module database [24] [as it was initially available by the Sandia National Laboratories (SNL)] are used as a study case and a detailed electrical equivalent of the PV module is employed to conduct simulations of a large variety of shading patterns and intensities. Then, the equations are validated by experimental results, using three entirely different commercial PV modules. In Section II, the PV module equivalent circuit is described. The study case PV modules used in the analysis are presented in Section III. The effect of partial shading on typical mc-Si PV modules is explored in Section IV. Equations for evaluating the MPP voltage and power of a PV module under partial shading are introduced in Section V for STC irradiance conditions and then they are extended to other irradiance levels in Section VI. The accuracy and validity of the proposed equations is experimentally validated in Section VII. II. PV CELL AND MODULE EQUIVALENT Various electrical equivalents have been developed to represent the solar cell, the single- and double-diode models being the most widely used [25]. Since the single-diode model does not represent precisely the IV characteristic of a PV cell, in this paper the two-diode equivalent is employed, including an extension term to describe operation in the negative voltage region [3], as shown in Fig. 1. This equivalent is described by the following equations: I = Iph − Is1 (eV +IRs/n 1 V T − 1) − Is2 (eV +IRs/n 2 V T − 1) −n V + IRs V + IRs − − b(V + IRs ) 1 − (1) Rsh Vbr Iph = IRun -sh (a1 + a2 T ) 3 −V g a p /V T (2) Is1 = as1 T e (3) Is2 = αs2 T 5/2 e−V g a p /2V T (4) VT = kT . q (5) The last term in (1) is related to the second current source of the PV cell equivalent circuit, accounting for the cell behavior in PARASKEVADAKI AND PAPATHANASSIOU: EVALUATION OF MPP VOLTAGE AND POWER OF mc-Si PV MODULES 925 TABLE I DATASHEET CHARACTERISTICS OF THE FOUR STUDY-CASE PV MODULES reverse bias, which is of key importance for the study of partial shading [26], [27]. To develop a PV module equivalent, the model of the PV cell is implemented in P-Spice and individual cell circuits are connected in series. Using such a modular cell-based model, a detailed analysis is possible, setting parameter values for each cell independently and allowing for the simulation of various shading scenarios of the PV module. In this study, the cells within a PV module are considered to be identical, both in direct and reverse bias behavior. In commercial PV modules, a number of bypass diodes are connected across groups of PV cells, to prevent development of high negative voltages on the cells and hot-spot phenomena, due to partial shading and mismatch of PV cell characteristics at reverse bias operation, [1], [6], [7]. The modular cell-based PV module equivalent employed in this paper permits proper representation of any number of bypass diodes connected across cell groups in a straightforward manner. Fig. 2. I–V characteristics of study-case Module 2 (see Table I) at different irradiance conditions (Tc = 25 ◦ C). Solid lines: simulation results. Dot points: approximation of measurements, based on the Sandia model, [24], [28]. III. STUDY-CASE PV MODULES To study the behavior of PV modules under partial shading conditions and derive equations describing their performance, the four mc-Si PV modules of Table I have been selected as study cases from the PV Module Database [24]. The selected modules present widely different characteristics in terms of nominal power, cell number, bypass diodes, etc. To simulate the operation of a PV module using the equivalent circuit model of Section II, values need to be identified for all of its parameters. Such values are often selected via a curve fitting procedure to I–V and P–V curves measured under a single set of irradiance and temperature conditions, while the accuracy of the model over the wide range of irradiance values experienced in an actual operation of the PV module is rarely taken into consideration. In this study, selection of PV cell model parameters takes into account the behavior at reduced irradiance conditions, which is crucial in the analysis of partial shading performance. For each module, a single set of PV cell model parameters was determined, with the objective of achieving a good approximation of the actual I–V curve, not only at STC irradiance (1000 W/m2 ), but also at 500 and 100 W/m2 . As an approximation of the actual I–V curves of the PV modules, the five I–V points derived from the Sandia model [28] per irradiance level are utilized. In this process, it was observed that a set of parameter values achieving best fit at STC might not be satisfactory at lower irradiance. Fig. 3. Shading patterns for examining partial shading effects. The simulated I–V curves achieve a very good overall accuracy, the normalized root-mean-squared error (NRMSE) of the current being lower than 5% and close to 1% for irradiance values higher than 500 W/m2 . In Fig. 2, the I–V curve of Module 2 is indicatively presented along with the points calculated by the Sandia model. IV. EFFECT OF PARTIAL SHADING ON PV MODULE CHARACTERISTIC CURVES The effect of partial shading on PV module characteristic curves is examined by shading an increasing number of cells, as shown in Fig. 3. Cell temperature is assumed to be constant at 25 ◦ C. Unshaded cells are considered fully illuminated at 1000 W/m2 . Irradiance on shaded cells is considered uniform and varies from 0 to 1000 W/m2 with a step of 100 W/m2 . In Fig. 4, the P–V curves of Module 2 are plotted for the two shading scenarios of Fig. 3, along with the power curve at unshaded STC conditions. Irradiance on shaded cells is IRsh = 400 W/m2 . Each shaded P–V curve can be divided into two areas. In Area 1, the bypass diode of cell group B (where the shaded cells are located, Fig. 3) is conducting, effectively shorting out of the circuit the whole group, eliminating, thus, the 926 IEEE TRANSACTIONS ON ENERGY CONVERSION, VOL. 26, NO. 3, SEPTEMBER 2011 shading is confined within one group of cells (<18 cells, for Module 2 of Table I), a global maximum of 33.5 W at 7.5 V is obtained for IRsh < 400 W/m2 , corresponding to VM PP1 of Fig. 4. This maximum remains constant in terms of voltage and power, as it represents the performance of the unshaded cell groups when the bypass diode of the shaded group is conducting. For IRsh values greater than 400 W/m2 , the maximum at VM PP2 becomes global and, hence, VM PP returns step wise to the region of unshaded operation, reaching values up to 20% greater than VM PP ,STC for this particular PV module. In any case, as the process of module shading evolves, VM PP can be subjected to large steps, obstructing the efficient operation of conventional MPP trackers, which would lock to the local maximum of VM PP2 that is closer to the predisturbance normal operating conditions and is much easier to be tracked, compared to the much lower VM PP1 values [11]. Fig. 4. Location of MPP on the P–V characteristic of PV Module 2 (see Table I) in the case of partial shading. Shading scenarios as in Fig. 3. effect of shading. In this case, the PV module practically operates as an equivalent 18-cell module (only cell group A is active), if losses on the bypass diode are ignored. In Area 2, on the other hand, higher voltages appear, because the bypass diode of group B is not conducting and the PV module characteristic is dominated by the series-connected shaded cells. At STC, the maximum power of the PV module is PM PP,STC = 77 W at VM PP,STC = 16.7 V. When shading occurs, a significant reduction of the output power is noted and two maxima appear on the P–V curve. The first (MPP1) at VM PP1 = 7.5 V, with a power output of PM AX1 = 34 W, is located very far from the normal MPP region and it is practically independent of the shaded area and irradiance, as the group of shaded cells is short-circuited. The second maximum (MPP2a or MPP2b) depends on the shading scenario, i.e., the number of shaded cells and their irradiance. In Fig. 4, when one cell is shaded, VM PP2a = 19.6 V and PM AX2a = 38.44 W, hence, point MPP2a becomes the global maximum of the P–V curve. When 18 cells are under shade, VM PP2b = 17.7 V and PM AXb = 32.83 W, and therefore, the global maximum lies now at point MPP1. The difference between PM AX2a and PM AXb is small, because the power reduction in Area 2 does not depend strongly on shade surface but on the irradiance incident on shaded cells. The voltage of the Area 2 MPP, VM PP2a or VM PP2b , can differ considerably from the STC value, especially for small areas of shade (VM PP2a is 17% higher than VM PP,STC , while VM PP2b is about 6% higher). The global MPP of the PV module can be either of the two local MPPs, depending on the shading scenario. Hence, the variation of the global VM PP can be significant for a PV module with bypass diodes, exhibiting large step variations as the number of shaded cells and the shaded irradiance IRsh change. This is demonstrated in Fig. 5, where the global VM PP and PM PP of Module 2 are plotted as a function of the irradiance IRsh incident on the shaded area, assuming different numbers of shaded cells, from one up to the entire module area (36 cells). When V. EVALUATION OF MPP VOLTAGE AND POWER AT STC A. Empirical Expressions for MPP Voltage and Power In order to quantify the location of the MPP on the P–V curve of the module for a given shading pattern, mathematical formulae are derived in this section, which allow an accurate enough calculation of the resulting MPP voltage and power, without the need to resort to the full modeling and simulation of the PV module. Following the discussion of the previous section, when the bypass diode of the shaded group of cells is conducting, the PV module characteristic will resemble that of the unshaded groups of cells. Hence, the respective MPP voltage (VM PP1 in Area 1, Fig. 4) will be close to the reference voltage of the unshaded cells, minus the voltage drop across the bypass diode. When the shaded cells are not bypassed, the respective local maximum (VM PP2 in Area 2, Fig. 4) will deviate from the reference (STC) value due to the effect of the series-connected shaded cells. To quantify this effect, the irradiance incident on the shaded cells and the respective area need to be taken into account. The following equations are introduced for VM PP1 and VM PP2 in the general case of a dual-peak P–V curve, as in Fig. 4, assuming an irradiance of 1000 W/m2 on the unshaded part of the PV module VM PP,STC + ΔVD (6) VM PP1 = VM PP,STC − NG sh NG VM PP2 = cV 1 VM PP,STC (1 + cV 2 ). (7) In (7), the term cV 1 VM PP ,STC gives the module MPP voltage if all cells were illuminated at the irradiance IRsh of the shaded part. Multiplication factor 1 + cV 2 adapts the MPP voltage to the fact that only a part of the module area operates under shade, i.e., at irradiance IRsh . Coefficients cV 1 and cV 2 obtain values 1 and 0, respectively, when no cell is shaded. Similarly, output powers PM AX1 and PM AX2 , corresponding to VM PP1 and VM PP2 , can be estimated by PM PP,STC + ΔPD (8) PM AX1 = PM PP,STC − NG sh NG PARASKEVADAKI AND PAPATHANASSIOU: EVALUATION OF MPP VOLTAGE AND POWER OF mc-Si PV MODULES Fig. 5. 927 Variation of (a) global VM P P and (b) global PM A X of Module 2, Table I, for different shading scenarios. TABLE II COEFFICIENTS cv 1 AND cP 1 FOR THE STUDY CASE PV MODULES PM AX2 = cP 1 PM PP,STC (1 + cP 2 ). (9) The terms related to the bypass diodes in (6) and (8) are now quantified. Concerning the forward voltage drop ΔVD a typical value of 0.7–0.8 V is sufficiently accurate. Power losses ΔPD are given by the product of diode voltage and current, which in turn depends on IRsh , as well as on the irradiance on unshaded cells. Since (6)–(9) are valid for STC conditions in the unshaded part of the module, the diode power loss can be approximated by IRsh Isc,STC . ΔPD = ΔVD IM PP,STC − (10) IRSTC Equation (10) reflects the fact that the bypass diode conducts the difference between the currents of the fully illuminated and the shaded cells. The latter, when the bypass diode is ON, operate at near short-circuit conditions (actually at a slightly negative voltage, due to the forward voltage drop of the diode) and, hence, their current can be approximated as (IRsh /IRSTC )·Isc,STC . B. Evaluation of Coefficients In this section, specific values and empirical expressions are derived for coefficients cV 1 , cV 2 , cP 1 , and cP 2 of (7) and (9), using the study case PV modules of Table I. The coefficient values, thus, derived are also suitable for application to other PV modules, as shown by experimental results in Section VII. Coefficient cV 1 is a function of the irradiance on the shaded part of the module. Specific values calculated for the study case modules are given in Table II, along with the mean value for all four modules. Coefficient cP 1 , also shown in Table II, varies almost linearly with irradiance IRsh on the shaded cells. Its value is very close to the p.u. IRsh (IRsh /IRSTC ), differences observed mainly at low irradiance due to reduced cell efficiency at such conditions. Calculation of coefficients cV 2 and cP 2 is realized via application of the PV module simulation model for the four studycase modules, under various partial shading scenarios (shaded areas and irradiances). Estimates of cV 2 and cP 2 are then extracted using (7) and (9) cV 2 = VM PP2 − cV 1 VM PP,STC cV 1 VM PP,STC (11) cP 2 = PM AX2 − cP 1 PM PP,STC . cP 1 PM PP,STC (12) Based on this procedure the plots of Fig. 6(a) are derived, depicting the variation of cV 2 in terms of irradiance and shaded area for all four PV modules. Coefficient cV 2 presents a similar variation for all irradiance values, being rather independent of the module characteristics, especially when IRsh is greater than 100 W/m2 and the shaded area is larger than 10%. The cV 2 values are generally positive, signifying that VM PP2 is greater than cV 1 ·VM PP ,STC , i.e., the MPP voltage of the PV module when its total surface is uniformly illuminated at IRsh . The increase of the MPP voltage is more marked at heavy shade conditions. Yet, when a very small number of cells are under 928 Fig. 6. IEEE TRANSACTIONS ON ENERGY CONVERSION, VOL. 26, NO. 3, SEPTEMBER 2011 (a) cV 2 and (b) cP 2 variation with shaded area and irradiance incident on the shaded cells for the study-case PV modules of Table I. TABLE III COEFFICIENTS OF THE THIRD DEGREE POLYNOMIALS OF (15) APPROXIMATING AV , BV , AP , AND BP severe shading (IRsh < 100 W/m2 ), then cV 2 declines rapidly, obtaining negative values. Similar remarks apply for cP 2 , shown in Fig. 6(b). The almost linear dependence of cV 2 and cP 2 on shaded area, for a given irradiance level, permits a simple approximation, valid for all irradiance levels higher than approx. 100 W/m2 and shade areas greater than 10% cV 2 (ssh ) = AV ssh + BV (13) cP 2 (ssh ) = AP ssh + BP . (14) Values of coefficients AV , BV , AP , and BP depend on the irradiance IRsh on the shaded cells. This dependence can in turn be approximated by a polynomial expression, such as YC = p1 w3 + p2 w2 + p3 w + p4 (15) where Yc is any one of AV , BV , AP , BP , and w is the p.u. IRsh . Coefficients p1 , p2 , p3 , and p4 are given in Table III, valid for any of the four study case PV modules. Using the formulae derived in this section, location of the two MPPs on the module P–V curve is now possible, based only on the shading pattern, i.e., the shaded area and the respective irradiance IRsh , for practically any realistic shading scenario. VI. EXTENSION TO OTHER IRRADIANCE LEVELS The formulae derived so far and their coefficients refer to the operation of the PV module at STC irradiance (1000 W/m2 ). Although this serves well as a reference case and is convenient for analyzing a wide range of conditions, in practice partial TABLE IV DATASHEET CHARACTERISTICS OF COMMERCIAL PV MODULES USED IN THE EXPERIMENTAL VALIDATION shading will mostly occur at other than reference conditions. In such a case, the equations derived in Section V are still applicable, after the modifications introduced in the following. To extend the analysis to other irradiance levels, an extended set of simulations has been performed for different shading patterns and intensities, assuming an irradiance of 600 and 200 W/m2 on the unshaded cells. MPP voltages and powers calculated with the P-Spice model of Section II were then compared to those obtained from (6)–(9). Concerning the MPP voltage, (6) and (7) can still be utilized, their error being lower than 3% when IRsh > 0.5·IRun -sh . Under heavy shade conditions (IRsh < 0.5·IRun -sh ), the MPP voltage error is still acceptable (around 5%), as long as the shaded cell irradiance remains higher than 100 W/m2 (the identified coefficient values are not accurate below this threshold). To evaluate maximum power, a simple modification of (8) and (9) is necessary, to account for the almost linear dependence of the unshaded cell output power on irradiance. Eventually, the generalized form of the (6)–(9), valid for any irradiance level incident on the PV module, is the following, after substituting coefficients cV 2 and cP 2 from (13) and (14) VM PP1 = VM PP,STC − NG sh VM PP,STC + ΔVD NG VM PP2 = cV 1 VM PP,STC (1 + AV ssh + BV ) (16a) (16b) PARASKEVADAKI AND PAPATHANASSIOU: EVALUATION OF MPP VOLTAGE AND POWER OF mc-Si PV MODULES Fig. 7. 929 Experimental and simulated I–V curve of (a) Module A and (b) Module C (see Table IV) under unshaded and shaded conditions. PM AX1 = PM PP,STC − NG sh +ΔVD IM PP,STC − PM PP,STC NG IRsh Isc,STC IRSTC TABLE V IRRADIANCE AND TEMPERATURE CONDITIONS FOR THE MEASUREMENTS PRESENTED IN TABLE VI IRun -sh IRSTC (16c) PM AX2 = [cP 1 PM PP,STC (1 + AP ssh + BP )] IRun -sh . (16d) IRSTC Values for cV 1 and cP 1 are given in Table II, while coefficients AV , BV , AP , and BP are related to IRsh via (15), using p1 , p2 , p3 , and p4 values from Table III. Equation (16) permit direct estimation of the MPP voltage and power of a mc-Si PV module operating under partial shading conditions, at any module irradiance, shading intensity and shade area, using only basic datasheet information and dispensing with the need to resort to accurate simulations and the associated copious procedure of model parameter identification. Limitations of the proposed equations are related to the assumption of uniform irradiance over the shaded cells and the fact that they refer to P–V curves with two peaks. Nevertheless, the PV module simulation model and the rationale and extraction methodology presented could be applied to curves with three or more local peaks (arising when more levels of shade exist or when different groups of cells are unequally shaded), after the necessary modifications are performed to the empirical formulae. The restriction for irradiance levels higher than 100 W/m2 on the shaded cells is of no real consequence, because such low levels would result only from shading obstacles almost in contact with the PV module. VII. EXPERIMENTAL VALIDATION To experimentally validate the PV module model of Section II and the empirical relations of Sections V and VI, three commercial mc-Si PV modules available in the laboratory have been utilized. Their datasheet characteristics are presented in Table IV. To generate shading patterns, shades were placed directly on each PV module, covering part of its surface. Two shading materials were used with transmittance rates TR of 28% and 64%, reducing irradiance in the shaded area to 28% or 64% of the unshaded value. Transmittance rates were calculated from the module short-circuit current when totally covered by the shading material. For each shading scenario, the I–V curve of the module was measured using a continuously variable resistor connected to its terminals. Measuring equipment and PV modules were placed outdoors and all experiments were realized under clear sky conditions. PV module irradiance and temperature were measured by means of a reference PV cell, operating in unshaded conditions. Irradiance on shaded cells is given by the measured irradiance multiplied by the TR of the shading material. Temperature of shaded cells was not directly measured. However, shading of the module surface was sustained for short intervals, justifying the assumption that the temperature of shaded cells does not deviate significantly from the unshaded ones. A. PV Cell/Module Equivalent Circuit To validate the suitability of the PV cell/module electrical equivalent of Section II, I–V curves of the three modules were 930 IEEE TRANSACTIONS ON ENERGY CONVERSION, VOL. 26, NO. 3, SEPTEMBER 2011 TABLE VI COMPARISON OF MEASUREMENTS AND SIMULATION RESULTS FOR THE PV MODULES OF TABLE IV measured under several operating conditions and compared to the simulations. The PV cell/module equivalent proved accurate in all cases, permitting reproduction of the module characteristics with very low error. Selected results are presented in Fig. 7, both for unshaded and partially shaded operation. In Fig. 7(a), shading of Module A is performed using Material 1 (TR = 28%), with a shaded area ssh of 33.3%. Irradiance on the unshaded cells was 742 W/m2 and on shaded cells 475 W/m2 , while the I–V curve for unshaded operation corresponds to 723 W/m2 . The simulation model presents a NRMSE lower than 2%. In Fig. 7(b), Module C and Material 2 (TR = 64%) are used. Irradiance on unshaded cells was 1020 W/m2 and on shaded cells 285 W/m2 . The NRMSE of the model is lower than 2.5% in all cases. During the measuring procedure, module temperatures varied in the range of 40–47 ◦ C. PARASKEVADAKI AND PAPATHANASSIOU: EVALUATION OF MPP VOLTAGE AND POWER OF mc-Si PV MODULES Fig. 8. 931 Measured P–V curves of Module A (see Table IV) for different shading scenarios. B. Equations for MPP Voltage and Power Estimation To validate the applicability of (16) to other mc-Si PV modules, partial shading operation of the experimental modules was realized under the irradiance and temperature conditions presented in Table V. Several shading patterns were applied, using the two shading materials to create shaded areas from 17% to 83% of the module surface, as presented in Table VI. In each case, the P–V curves of the modules were measured to obtain the voltage and power at the two MPP points of the curve. Indicative P–V curves obtained for Module A are illustrated in Fig. 8. Then, the MPP voltages and powers were calculated for each case, applying (16). For this purpose, module characteristics from the respective datasheets were used and the values obtained from (16) were referred to the module operating temperatures of Table V, using the temperature coefficients provided in the datasheets. All experimental and calculation results, together with the respective errors, are summarized in Table VI. Blank cells exist in Table VI because the first peak (MPP1) voltage and power were not recorded for certain shading scenarios of Modules B and C, as the minimum value of the variable resistor used in the experiments was not low enough. From Table VI, it is clear that the proposed formulae provide a fairly accurate approximation, the error being lower than 5% in most cases. Higher errors do exist and may be attributed to several factors, besides the approximate nature of (16), including shaded-cell temperature differences, shading surface abnormalities, as well as to the fact that the PV modules of the experiments were in operation for some years and, therefore, their actual characteristics may deviate from datasheet values due to degradation. VIII. CONCLUSION In this paper, the effect of partial shading on PV module performance is analyzed in order to provide a simple and easily applicable methodology for the calculation of shadow effects on the main electrical characteristics of a PV module. A double diode PV cell model, with an extension term for reverse bias operation, is utilized for the simulation of four study case mc-Si PV modules. Semiempirical formulae are then derived for the MPP voltage and power under partial shading, taking into account the module characteristics and the shading pattern. 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Paraskevadaki received the Diploma degree in electrical engineering from the National Technical University of Athens, Athens, Greece, in 2007, where she is currently working toward the Ph.D. degree. Her current research interests include renewable energy technologies, especially photovoltaics, PV system design, and simulation and distributed generation integration into the electrical grid. Ms. Paraskevadaki is a member of the Technical Chamber of Greece. Stavros A. Papathanassiou (S’93–M’98–SM’10) received the Diploma degree in electrical engineering and the Ph.D degree from the National Technical University of Athens (NTUA), Athens, Greece, in 1991 and 1997, respectively. He was with the Distribution Division of the Public Power Corporation of Greece, in power quality and distributed generation studies, being responsible for the elaboration of DG interconnection guidelines. In 2002, he became a Member of the Faculty in the Electric Power Division, NTUA, where he is currently an Assistant Professor. His research interests include wind turbine and PV technology and the integration of DG to the grid. Dr. Papathanassiou is a member of the CIGRE. He is also a Registered Professional Engineer and a member of the Technical Chamber of Greece. Since 2009, he has been a Member of the Board of the Hellenic Transmission System Operator.