TGC4510-SM
K Band Upconverter
Applications



4510
VSAT Ground Terminal
Point-to-Point Radio
Millimeter wave Communications
1201
1066
28-pin 5x5mm QFN package
27
26
25
VDLO23
VGX
28
24
23
22
21
1
RF OUT
20
2
3
Variable
Gain
Amplifier
19
4
18
VCTRL1
5
17
VDLO1
VGRF
6
16
LO IN
Image
Reject
Mixer
7
8
General Description
VGLO
VCTRL2
9
10
IF2

RF Frequency Range: 17.7 – 26.5 GHz
IF Frequency: DC – 4.0 GHz
LO Frequency: 6.85 – 15.25 GHz
LO Input Power: 2 to 10 dBm
Conversion Gain: 13 dB
OTOI: 32 dBm at max gain
Attenuation Range: 30 dB typical
Bias 5.0 V, 345 mA, 3.3 V, 120 mA
Package Dimensions: 5.0 x 5.0 x 1.3 mm
11
x2
LO
Doubler
12
13
15
14
IF1








Functional Block Diagram
VDRF
Product Features
Pin Configuration
The TriQuint TGC4510-SM is a K-Band image
reject upconverter mixer with integrated x2 LO
buffer amplifier and output variable gain amplifier.
The TGC4510-SM outputs an RF frequency from
17.7 to 26.5 GHz using IF inputs from DC to 4.0
GHz and a corresponding LO frequency. It is
designed using TriQuint’s pHEMT production
process.
The TGC4510-SM typically provides 32 dBm of
output TOI at –10 dBm input power per tone and
has a conversion gain of 13 dB. Optional nulling of
the LO can improve LO Isolation by 30 dB.
The TGC4510-SM is available in a low-cost,
surface mount 28 lead 5x5mm QFN package and is
ideally suited for Point-to-Point Radio, and K-Band
VSAT Ground Terminal.
Pin #
Function Label
1,7,8,9,13,14,15,21,22,
27,28
28
2
3,11,19,20,24
4
5
6
10
12
16
17
18
23
25
26
GND
RF OUT
NC
VCTRL2
VCTRL1
VGRF
IF2
IF1
LO IN
VDLO1
VGLO
VDLO23
VGX
VDRF
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Ordering Information
Part No.
TGC4510-SM
ECCN
EAR99
Description
K Band Upconverter
Standard T/R size = 500 pieces on a 7” reel
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
- 1 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Specifications
Absolute Maximum Ratings
Parameter
VDRF, VDLO1, VDLO23
IDRF
IDLO1
IDLO23
VGRF, VGLO, VGX
VCTRL1, VCTRL2
DC Voltage at IF1, IF2 for LO
nulling
RF Input Power,LO IN, 50Ω, T =
25C
RF Input Power,IF IN, 50Ω, T =
25C
Channel Temperature, Tch
Storage Temperature
Power Dissipation, Pdiss
Recommended Operating Conditions
Rating
Parameter
Operating Temp.
Range
VDRF
VDLO1, VDLO23
IDRF
IDLO1+IDLO23
6V
390 mA
190 mA
300 mA
-3 to +1.5 V
-3 to +0 V
VCTRL1, VCTRL2
LO IN input power
-2 to +2V
IF1, IF2 input power
15 dBm
Min
Typ
-40
Max Units
+85
C
0
9
V
V
mA
mA
V
dBm
5.0
3.3
360
180
-2
3
6
-10
dBm
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
18 dBm
200 C
-65 to 125 C
2W
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
- 2 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Specifications
Electrical Specifications
Test conditions unless otherwise noted:
VDLO1, VDLO23 = 3.3 V, VGLO = -1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = -1.2 V, T = 25 °C
Characteristic Impedance: 50 Ω
Parameter
Conditions
RF Frequency Range
LO Frequency Range
IF Frequency Range
Conversion Gain
Full Frequency Range
17.7 – 23.6 GHz
Attenuation Range
SSB Noise Figure
Typ
17.7
6.85
0
Max
Units
26.5
15.25
4
GHz
GHz
GHz
1/
9.5
2/
OIP3
Full Frequency Range
17.7 – 23.6 GHz
27.5
IIP3 at Minimum Gain
Image Rejection
LO Isolation at RF Port
LO Isolation at RF Port
LO Return Loss
RF Return Loss
Min
3/ 5/
4/ 5/
13
13
34
15
dB
17.5
32
32
13
15
-5
25
12
11
dB
dB
dBm
dBm
dB
dB
dB
dB
dB
1/ maximum gain, VCTL1 = -2 V, VCTL2 = 0 V
2/ maximum gain at VCTL1 = -2 V, VCTL2 = 0 V; minimum gain at VCTL1 = 0 V, VCTL2 = -2 V
3/ without external LO nulling voltage
4/ with external LO nulling voltage
5/ LO Isolation = (Input Power at LO Port at LO Frequency) – (Output Power at RF port at 2xLO frequency)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
- 3 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Specifications
Thermal and Reliability Information
Parameter
Conditions
Rating
Thermal Resistance, θJC, measured to back of
package
Tbase = 85 °C
θJC = 19.6 °C/W
Tbase = 85 °C, VDLO = 3.0
V, IDLO=260 mA, VDRF =
5.0 V, IDRF=360 mA
Pdiss = 2.6 W
Tch = 136 °C
Tm = 5.2 E+06
Hours
Channel Temperature (Tch), and Median Lifetime
(Tm)
Median Lifetime (Tm) vs. Channel Temperature (Tch)
Median Lifetime, Tm (Hours)
1.0E+15
1.0E+14
1.0E+13
1.0E+12
1.0E+11
1.0E+10
1.0E+09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
FET5
1.0E+04
25
50
75
100
125
150
175
200
Channel Temperature, Tch (°C)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
- 4 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance
Unless noted, bias conditions for all measurements:
VDLO1, VDLO23 = 3.3 V, VGLO = -1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = -0.75 V, IDRF = 340 to 380 mA; VGX = -1.2 V
Unless noted, all measurements with IF Input Power = -10 dBm, external IF hybrid and no LO nulling at 25 °C
Upper Side Band Frequency Ranges
Lower Side Band Frequency Ranges
IF Freq
GHz
0.5
1.0
2.0
3.0
3.3
4.0
LO Freq
GHz
9-14
9-14
9-14
10-15
10-15.5
10-16
IF Freq
GHz
0.5
1.0
2.0
3.0
3.3
4.0
RF Freq
GHz
17.5-27.5
17-27
16-26
17-27
16.7-27.7
16-28
VCTRL1
V
-2
-1.0
0
State
Max Gain
Reduced Gain
Min Gain
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
- 5 of 28-
LO Freq
GHz
8-14
8-13
7-13
6.5-12
6.5-12
6.5-11
RF Freq
GHz
16.5-28.5
17-28
16-28
16-27
16.3-27.3
17-26
VCTRL2
V
0
-1.0
-2
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V, Temp = + 25 °C.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
LSB Conversion Gain vs. RF vs. IF and LO Power
USB Conversion Gain vs. RF vs. IF and LO Power
State: Max Gain
State: Max Gain
20
20
IF Freq 1.0 GHz
18
16
IF Freq 3.3 GHz
16
IF Freq 3.3 GHz
14
LO 3 dBm
14
LO 3 dBm
IF Freq 4.0 GHz
LO 6 dBm
12
LO 9 dBm
10
8
6
4
2
IF Freq 4.0 GHz
LO 6 dBm
12
LO 9 dBm
10
8
6
4
0
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
LSB Conversion Gain vs. RF vs. IF and LO Power
USB Conversion Gain vs. RF vs. IF and LO Power
State: Reduced Gain
10
State: Reduced Gain
10
IF Freq 1.0 GHz
8
IF Freq 1.0 GHz
IF Freq 2.0 GHz
8
6
IF Freq 3.3 GHz
6
IF Freq 3.3 GHz
4
LO 3 dBm
4
LO 3 dBm
IF Freq 4.0 GHz
LO 6 dBm
2
LO 9 dBm
0
-2
-4
-6
Conversion Gain (dB)
Conversion Gain (dB)
IF Freq 2.0 GHz
2
0
IF Freq 2.0 GHz
IF Freq 4.0 GHz
LO 6 dBm
2
LO 9 dBm
0
-2
-4
-6
-8
-8
-10
-10
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
LSB Conversion Gain vs. RF vs. IF and LO Power
USB Conversion Gain vs. RF vs. IF and LO Power
State: Min Gain
-10
State: Min Gain
-10
IF Freq 1.0 GHz
-12
IF Freq 3.3 GHz
-14
IF Freq 4.0 GHz
-16
LO 3 dBm
LO 6 dBm
-18
LO 9 dBm
-20
-22
-24
-26
IF Freq 1.0 GHz
-12
IF Freq 2.0 GHz
Conversion Gain (dB)
Conversion Gain (dB)
IF Freq 1.0 GHz
IF Freq 2.0 GHz
Conversion Gain (dB)
Conversion Gain (dB)
18
IF Freq 2.0 GHz
-14
IF Freq 3.3 GHz
-16
LO 3 dBm
IF Freq 4.0 GHz
LO 6 dBm
-18
LO 9 dBm
-20
-22
-24
-26
-28
-28
-30
-30
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
- 6 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V, Temp = + 25 °C.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
USB Attenuation vs. RF vs. IF and LO Power
LSB Attenuation vs. RF vs. IF and LO Power
Min to Max Gain State
40
Min to Max Gain State
40
IF Freq 1.0 GHz
IF Freq 1.0 GHz
IF Freq 2.0 GHz
IF Freq 4.0 GHz
LO 3 dBm
30
LO 6 dBm
LO 9 dBm
25
20
IF Freq 4.0 GHz
LO 3 dBm
30
LO 6 dBm
LO 9 dBm
25
20
10
10
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
LSB Image Rejection vs. RF vs. IF and LO Power
USB Image Rejection vs. RF vs. IF and LO Power
State: Max Gain
50
State: Max Gain
50
IF Freq 1.0 GHz
IF Freq 1.0 GHz
IF Freq 2.0 GHz
45
40
IF Freq 3.3 GHz
40
IF Freq 3.3 GHz
35
LO 3 dBm
35
LO 3 dBm
IF Freq 4.0 GHz
LO 6 dBm
30
LO 9 dBm
25
20
15
10
Image Rejection (dB)
45
Image Rejection (dB)
IF Freq 3.3 GHz
15
15
5
IF Freq 2.0 GHz
IF Freq 4.0 GHz
LO 6 dBm
30
LO 9 dBm
25
20
15
10
5
0
0
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
LSB Image Rejection vs. RF vs. IF and LO Power
USB Image Rejection vs. RF vs. IF and LO Power
State: Reduced Gain
50
State: Reduced Gain
50
IF Freq 1.0 GHz
IF Freq 1.0 GHz
IF Freq 2.0 GHz
45
40
IF Freq 3.3 GHz
40
IF Freq 3.3 GHz
35
LO 3 dBm
35
LO 3 dBm
IF Freq 4.0 GHz
LO 6 dBm
30
LO 9 dBm
25
20
15
10
5
Image Rejection (dB)
45
Image Rejection (dB)
IF Freq 2.0 GHz
35
IF Freq 3.3 GHz
Attenuation (dB)
Attenuation (dB)
35
IF Freq 2.0 GHz
IF Freq 4.0 GHz
LO 6 dBm
30
LO 9 dBm
25
20
15
10
5
0
0
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
- 7 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V, Temp = + 25 °C.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
LSB Image Rejection vs. RF vs. IF and LO Power
USB Image Rejection vs. RF vs. IF and LO Power
State: Min Gain
50
IF Freq 1.0 GHz
45
40
IF Freq 3.3 GHz
40
IF Freq 3.3 GHz
35
LO 3 dBm
35
LO 3 dBm
IF Freq 4.0 GHz
LO 6 dBm
30
LO 9 dBm
25
20
15
10
5
IF Freq 2.0 GHz
IF Freq 4.0 GHz
LO 6 dBm
30
LO 9 dBm
25
20
15
10
5
0
0
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
LSB Output P1dB vs. RF vs. IF and LO Power
USB Output P1dB vs. RF vs. IF and LO Power
State: Max Gain
State: Max Gain
30
30
IF Freq 1.0 GHz
IF Freq 2.0 GHz
25
IF Freq 3.3 GHz
IF Freq 4.0 GHz
LO 3 dBm
20
LO 6 dBm
LO 9 dBm
15
10
5
Output 1dB Compression (dBm)
Output 1dB Compression (dBm)
IF Freq 1.0 GHz
IF Freq 2.0 GHz
Image Rejection (dB)
45
Image Rejection (dB)
State: Min Gain
50
IF Freq 1.0 GHz
IF Freq 2.0 GHz
25
IF Freq 3.3 GHz
IF Freq 4.0 GHz
LO 3 dBm
20
LO 6 dBm
LO 9 dBm
15
10
5
0
0
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
LSB Output IP3 vs. RF vs. IF and LO Power
USB Output IP3 vs. RF vs. IF and LO Power
State: Max Gain
40
State: Max Gain
40
IF Freq 1.0 GHz
35
IF Freq 1.0 GHz
35
IF Freq 2.0 GHz
IF Freq 2.0 GHz
30
IF Freq 4.0 GHz
LO 3 dBm
25
LO 6 dBm
LO 9 dBm
20
15
10
5
IF Freq 3.3 GHz
Output IP3 (dBm)
Output IP3 (dBm)
IF Freq 3.3 GHz
30
IF Freq 4.0 GHz
LO 3 dBm
25
LO 6 dBm
LO 9 dBm
20
15
10
5
0
0
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
- 8 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V, Temp = + 25 °C.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
LSB Output IP3 vs. RF vs. IF and LO Power
USB Output IP3 vs. RF vs. IF and LO Power
State: Reduced Gain
40
State: Reduced Gain
40
IF Freq 1.0 GHz
35
IF Freq 1.0 GHz
35
IF Freq 2.0 GHz
IF Freq 2.0 GHz
30
IF Freq 4.0 GHz
LO 3 dBm
25
LO 6 dBm
LO 9 dBm
20
15
10
IF Freq 3.3 GHz
Output IP3 (dBm)
Output IP3 (dBm)
IF Freq 3.3 GHz
5
30
LO 3 dBm
25
LO 6 dBm
LO 9 dBm
20
15
10
5
0
0
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
LSB Output IP3 vs. RF vs. IF and LO Power
USB Output IP3 vs. RF vs. IF and LO Power
State: Min Gain
5
State: Min Gain
5
IF Freq 1.0 GHz
IF Freq 2.0 GHz
0
IF Freq 4.0 GHz
LO 3 dBm
-5
LO 6 dBm
LO 9 dBm
-10
-15
-20
IF Freq 1.0 GHz
IF Freq 2.0 GHz
0
IF Freq 3.3 GHz
Output IP3 (dBm)
Output IP3 (dBm)
IF Freq 4.0 GHz
IF Freq 3.3 GHz
IF Freq 4.0 GHz
LO 3 dBm
-5
LO 6 dBm
LO 9 dBm
-10
-15
-20
-25
-25
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
- 9 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V, Temp = + 25 °C.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
100
90
80
70
60
50
40
30
20
10
0
-10
USB LO-to-RF Isolation vs. LO Freq vs. LO Power
and State
Max Gain
Reduced Gain
Min Gain
LO 3 dBm
LO 6 dBm
LO 9 dBm
9
10
11
12
13
14
LO Frequency (GHz)
15
Isolation (dB)
Isolation (dB)
LSB LO-to-RF Isolation vs. LO Freq vs. LO Power
and State
100
90
80
70
60
50
40
30
20
10
0
16
Min Gain
LO 3 dBm
LO 6 dBm
LO 9 dBm
11
12
13
14
LO Frequency (GHz)
15
Isolation (dB)
Isolation (dB)
Reduced Gain
10
Min Gain
LO 3 dBm
LO 6 dBm
LO 9 dBm
7
16
Reduced Gain
Min Gain
LO 3 dBm
LO 6 dBm
LO 9 dBm
6
7
IF Freq 3.3 GHz
IF Freq 4.0 GHz
LO 3 dBm
LO 6 dBm
LO 9 dBm
15
16
Isolation (dB)
Isolation (dB)
13
14
State: Max Gain
IF Freq 2.0 GHz
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
8
9
10 11 12
LO Frequency (GHz)
USB IF-to-RF Isolation vs. LO Freq vs. IF
and LO Power
IF Freq 1.0 GHz
11
12
13
14
LO Frequency (GHz)
14
Max Gain
State: Max Gain
100
90
80
70
60
50
40
30
20
10
0
10
13
100
90
80
70
60
50
40
30
20
10
0
LSB IF-to-RF Isolation vs. LO Freq vs. IF
and LO Power
9
8
9
10 11 12
LO Frequency (GHz)
USB LO-to-IF Isolation vs. LO Freq vs. LO Power
and State
Max Gain
9
Reduced Gain
6
LSB LO-to-IF Isolation vs. LO Freq vs. LO Power
and State
100
90
80
70
60
50
40
30
20
10
0
Max Gain
100
90
80
70
60
50
40
30
20
10
0
IF Freq 1.0 GHz
IF Freq 2.0 GHz
IF Freq 3.3 GHz
IF Freq 4.0 GHz
LO 3 dBm
LO 6 dBm
LO 9 dBm
6
- 10 of 28-
7
8
9
10 11 12
LO Frequency (GHz)
13
14
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V, Temp = + 25 °C.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
USB 2LO-to-RF Leakage vs. LO Freq vs.
LO Power and State
LSB 2LO-to-RF Leakage vs. LO Freq vs.
LO Power and State
Max Gain
-10
Reduced Gain
Min Gain
-20
LO 3 dBm
LO 6 dBm
-30
LO 9 dBm
-40
-50
-60
-70
0
2LO-to-RF Leakage (dBm)
2LO-to-RF Leakage (dBm)
0
Max Gain
-10
Reduced Gain
Min Gain
-20
LO 3 dBm
LO 6 dBm
-30
LO 9 dBm
-40
-50
-60
-70
-80
-80
9
10
11
12
13
14
LO Frequency (GHz)
15
6
16
LSB 2LO-to-IF Leakage vs. LO Freq vs. LO Power
and State
Min Gain
-20
LO 3 dBm
LO 6 dBm
-30
LO 9 dBm
-40
-50
-60
-70
-80
14
Max Gain
-10
Reduced Gain
Min Gain
-20
LO 3 dBm
LO 6 dBm
-30
LO 9 dBm
-40
-50
-60
-70
-80
9
10
11
12
13
14
LO Frequency (GHz)
15
16
6
RF-to-IF Isolation vs. RF Freq vs. LO Power
and State
100
90
80
70
60
50
40
30
20
10
0
8
9
10 11 12
LO Frequency (GHz)
13
14
IF2 port, without external IF Hybrid
Reduced Gain
Min Gain
LO 3 dBm
LO 6 dBm
LO 9 dBm
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
RF-to-IF Isolation (dB)
Max Gain
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
7
RF-to-IF Isolation vs. RF Freq vs. LO Power
and State
IF1 port, without external IF Hybrid
RF-to-IF Isolation (dB)
13
0
Max Gain
Reduced Gain
8
9
10 11 12
LO Frequency (GHz)
USB 2LO-to-IF Leakage vs. LO Freq vs. LO
Power and State
2LO-to-IF Leakage (dBm)
2LO-to-IF Leakage (dBm)
0
-10
7
100
90
80
70
60
50
40
30
20
10
0
Max Gain
Reduced Gain
Min Gain
LO 3 dBm
LO 6 dBm
LO 9 dBm
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
- 11 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance Return Loss
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V, Temp = + 25 °C.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
USB RF Return Loss vs. RF vs. IF and LO Power
LSB RF Return Loss vs. IF and LO Power
0
State: Max Gain
State: Max Gain
0
IF Freq 0.5 GHz
IF Freq 0.5 GHz
5
5
IF Freq 2.0 GHz
IF Freq 3.3 GHz
IF Freq 4.0 GHz
10
LO 3 dBm
LO 6 dBm
15
LO 9 dBm
20
Return Loss (dB)
Return Loss (dB)
IF Freq 1.0 GHz
IF Freq 1.0 GHz
25
IF Freq 3.3 GHz
IF Freq 4.0 GHz
10
LO 3 dBm
LO 6 dBm
15
LO 9 dBm
20
25
30
30
17 18 19 20 21 22 23 24 25 26 27
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
RF Frequency (GHz)
USB RF Return Loss vs. RF vs. IF and LO Power
LSB RF Return Loss vs. RF vs. IF and LO Power
0
IF Freq 2.0 GHz
State: Min Gain
State: Min Gain
0
IF Freq 0.5 GHz
IF Freq 0.5 GHz
IF Freq 1.0 GHz
IF Freq 1.0 GHz
5
IF Freq 2.0 GHz
IF Freq 3.3 GHz
IF Freq 4.0 GHz
10
LO 3 dBm
LO 6 dBm
15
LO 9 dBm
20
Return Loss (dB)
Return Loss (dB)
5
25
IF Freq 2.0 GHz
IF Freq 3.3 GHz
IF Freq 4.0 GHz
10
LO 3 dBm
LO 6 dBm
15
LO 9 dBm
20
25
30
30
17 18 19 20 21 22 23 24 25 26 27
17 18 19 20 21 22 23 24 25 26 27
RF Frequency (GHz)
RF Frequency (GHz)
LO Return Loss vs. Frequency and LO Power
0
Return Loss (dB)
LO 3 dBm
10
LO 6 dBm
LO 9 dBm
20
30
40
6
8
10
12
14
16
LO Frequency (GHz)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
- 12 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance – External LO Nulling
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V, Temp = + 25 °C.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
2×LO to RF Leakage WITH External LO
Nulling Voltages
2×LO to RF Leakage WITHOUT External LO
Nulling Voltages
State: Max Gain
30
2×LO to RF Leakage (dBm)
2×LO to RF Leakage (dBm)
40
LO = 9.0 dBm
20
10
0
LO = 2.0 dBm
-10
-20
-30
12
14
16
18
20
22
24
26
2×LO Frequency (GHz)
28
State: Max Gain
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
LO = 2.0 dBm
LO = 9.0 dBm
12
30
LSB LO Nulling Voltage vs. LO Frequency
vs. Temperature
Voltage (V)
Voltage (V)
Vq @ -40°C
Vq @ +25°C
Vq @ +85°C
-1.5
9
10
11
12
13
14
LO Frequency (GHz)
0.5
0
-0.5
Vi @ -40°C
Vi @ +25°C
Vi @ +85°C
-1
-1.5
15
16
6
LSB Current for LO Nulling Voltage vs. LO
Frequency vs. Temperature
0
Iq @ -40°C
Iq @ +25°C
Iq @ +85°C
-10
-15
9
10
11
12
13
14
LO Frequency (GHz)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
12
13
14
Iq @ -40°C
Iq @ +25°C
Iq @ +85°C
15
5
-5
9
10
11
LO Frequency (GHz)
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
Current (mA)
Current (mA)
10
8
20
Ii @ -40°C
Ii @ +25°C
Ii @ +85°C
15
7
USB Current for LO Nulling Voltage vs. LO
Frequency vs. Temperature
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
20
30
Vq @ -40°C
Vq @ +25°C
Vq @ +85°C
1
0
-1
28
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
0.5
-0.5
18
20
22
24
26
2×LO Frequency (GHz)
1.5
Vi @ -40°C
Vi @ +25°C
Vi @ +85°C
1
16
USB LO Nulling Voltage vs. LO Frequency
vs. Temperature
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
1.5
14
10
5
0
-5
Ii @ -40°C
Ii @ +25°C
Ii @ +85°C
-10
-15
15
16
- 13 of 28-
6
7
8
9
10
11
LO Frequency (GHz)
12
13
14
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance – Conversion Gain vs. Temperature
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
LSB Conversion Gain vs. RF Frequency
vs. Temperature
USB Conversion Gain vs. RF Frequency
vs. Temperature
State: Max Gain; LO power = 6 dBm, IF = 1 GHz
Conversion Gain (dB)
Conversion Gain (dB)
State: Max Gain; LO power = 6 dBm, IF = 1 GHz
20
18
16
14
12
10
8
6
4
2
0
-40°C
+25°C
+85°C
17
18
19
20
21
22
23
24
RF Frequency (GHz)
25
26
20
18
16
14
12
10
8
6
4
2
0
-40°C
+25°C
+85°C
17
27
LSB Conversion Gain vs. RF Frequency
vs. Temperature
18
Conversion Gain (dB)
Conversion Gain (dB)
19
20
21
22
23
24
RF Frequency (GHz)
25
26
20
18
16
14
12
10
8
6
4
2
0
27
19
Conversion Gain (dB)
Conversion Gain (dB)
20
21
22
23
24
RF Frequency (GHz)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
25
26
27
18
19
20
21
22
23
24
RF Frequency (GHz)
25
26
27
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
-40°C
+25°C
+85°C
18
25
USB Conversion Gain vs. RF Frequency
vs. Temperature
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
17
21
22
23
24
RF Frequency (GHz)
-40°C
+25°C
+85°C
17
LSB Conversion Gain vs. RF Frequency
vs. Temperature
20
18
16
14
12
10
8
6
4
2
0
20
State: Max Gain; LO power = 6 dBm, IF = 2 GHz
-40°C
+25°C
+85°C
17
19
USB Conversion Gain vs. RF Frequency
vs. Temperature
State: Max Gain; LO power = 6 dBm, IF = 2 GHz
20
18
16
14
12
10
8
6
4
2
0
18
26
27
- 14 of 28-
20
18
16
14
12
10
8
6
4
2
0
-40°C
+25°C
+85°C
17
18
19
20
21
22
23
24
RF Frequency (GHz)
25
26
27
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance – Image Rejection vs. Temperature
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
LSB Image Rejection vs. RF Frequency vs.
Temperature
USB Image Rejection vs. RF Frequency
vs. Temperature
State: Max Gain; LO power = 6 dBm, IF = 1 GHz
Image Rejection (dB)
Image Rejection (dB)
State: Max Gain; LO power = 6 dBm, IF = 1 GHz
50
45
40
35
30
25
20
15
10
5
0
-40°C
+25°C
+85°C
17
18
19
20
21
22
23
24
RF Frequency (GHz)
25
26
50
45
40
35
30
25
20
15
10
5
0
-40°C
+25°C
+85°C
17
27
LSB Image Rejection vs. RF Frequency vs.
Temperature
18
19
20
21
22
23
24
RF Frequency (GHz)
Image Rejection(dB)
Image Rejection (dB)
25
26
50
45
40
35
30
25
20
15
10
5
0
Image Rejection(dB)
Image Rejection (dB)
19
20
21
22
23
24
RF Frequency (GHz)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
25
26
27
18
19
20
21
22
23
24
RF Frequency (GHz)
25
26
27
26
27
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
-40°C
+25°C
+85°C
18
25
USB Image Rejection vs. RF Frequency
vs. Temperature
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
17
21
22
23
24
RF Frequency (GHz)
-40°C
+25°C
+85°C
17
27
LSB Image Rejection vs. RF Frequency vs.
Temperature
50
45
40
35
30
25
20
15
10
5
0
20
State: Max Gain; LO power = 6 dBm, IF = 2 GHz
-40°C
+25°C
+85°C
17
19
USB Image Rejection vs. RF Frequency
vs. Temperature
State: Max Gain; LO power = 6 dBm, IF = 2 GHz
50
45
40
35
30
25
20
15
10
5
0
18
26
27
- 15 of 28-
50
45
40
35
30
25
20
15
10
5
0
-40°C
+25°C
+85°C
17
18
19
20
21
22
23
24
RF Frequency (GHz)
25
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance – 1dB Compression vs. Temperature
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
LSB Output P1dB vs. RF Frequency vs.
Temperature
USB Output P1dB vs. RF Frequency vs.
Temperature
State: Max Gain; LO power = 6 dBm, IF = 1 GHz
Output 1dB Compression (dBm)
Output 1dB Compression (dBm)
State: Max Gain; LO power = 6 dBm, IF = 1 GHz
30
25
20
15
-40°C
+25°C
+85°C
10
5
0
17
18
19
20
21
22
23
24
RF Frequency (GHz)
25
26
30
25
20
15
-40°C
+25°C
+85°C
10
5
0
27
17
LSB Output P1dB vs. RF Frequency vs.
Temperature
25
20
-40°C
+25°C
+85°C
5
0
17
18
19
20
21
22
23
24
RF Frequency (GHz)
25
26
15
5
0
21
22
23
24
RF Frequency (GHz)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
25
27
26
27
5
0
17
Output 1dB Compression (dBm)
Output 1dB Compression (dBm)
-40°C
+25°C
+85°C
20
26
-40°C
+25°C
+85°C
10
18
19
20
21
22
23
24
RF Frequency (GHz)
25
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
20
19
27
USB Output P1dB vs. RF Frequency vs.
Temperature
25
18
26
20
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
17
25
25
27
30
10
21
22
23
24
RF Frequency (GHz)
30
LSB Output P1dB vs. RF Frequency vs.
Temperature
15
20
State: Max Gain; LO power = 6 dBm, IF = 2 GHz
Output 1dB Compression (dBm)
Output 1dB Compression (dBm)
State: Max Gain; LO power = 6 dBm, IF = 2 GHz
10
19
USB Output P1dB vs. RF Frequency vs.
Temperature
30
15
18
26
27
- 16 of 28-
30
25
20
15
-40°C
+25°C
+85°C
10
5
0
17
18
19
20
21
22
23
24
RF Frequency (GHz)
25
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance – Output IP3 vs. Temperature
Test conditions unless otherwise noted: VDLO1, VDLO23 = 3.3 V, VGLO = - 1.2 V, IDLO1+IDLO23 = 140 to 200 mA,
VDRF = 5.0 V, VGRF = - 0.75 V, IDRF = 340 to 380 mA, VGX = - 1.2 V.
Data taken with external IF hybrid and LO nulling applied.
Characteristic Impedance: 50 Ω.
LSB Output IP3 vs. RF Frequency vs.
Temperature
USB Output IP3 vs. RF Frequency vs.
Temperature
State: Max Gain; LO power = 6 dBm, IF = 1 GHz
Output IP3 (dBm)
Output IP3 (dBm)
State: Max Gain; LO power = 6 dBm, IF = 1 GHz
40
38
36
34
32
30
28
26
24
22
20
-40°C
+25°C
+85°C
17
18
19
20
21
22
23
24
RF Frequency (GHz)
25
26
40
38
36
34
32
30
28
26
24
22
20
27
-40°C
+25°C
+85°C
17
LSB Output IP3 vs. RF Frequency vs.
Temperature
18
19
Output IP3 (dBm)
Output IP3 (dBm)
20
21
22
23
24
RF Frequency (GHz)
25
26
40
38
36
34
32
30
28
26
24
22
20
27
17
19
Output IP3 (dBm)
Output IP3 (dBm)
20
21
22
23
24
RF Frequency (GHz)
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
25
26
27
18
19
20
21
22
23
24
RF Frequency (GHz)
25
26
27
26
27
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
-40°C
+25°C
+85°C
18
25
USB Output IP3 vs. RF Frequency vs.
Temperature
State: Max Gain; LO power = 6 dBm, IF = 3.3 GHz
17
21
22
23
24
RF Frequency (GHz)
-40°C
+25°C
+85°C
LSB Output IP3 vs. RF Frequency vs.
Temperature
40
38
36
34
32
30
28
26
24
22
20
20
State: Max Gain; LO power = 6 dBm, IF = 2 GHz
-40°C
+25°C
+85°C
17
19
USB Output IP3 vs. RF Frequency vs.
Temperature
State: Max Gain; LO power = 6 dBm, IF = 2 GHz
40
38
36
34
32
30
28
26
24
22
20
18
26
27
- 17 of 28-
40
38
36
34
32
30
28
26
24
22
20
-40°C
+25°C
+85°C
17
18
19
20
21
22
23
24
RF Frequency (GHz)
25
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance - Spur Tables, IF 2.0 GHz
Spur Tables
Spur tables are N  fIF – M  fLO mixer spurious products for -10 dBm IF input power.
RF is at 1IF x 2LO.
All values in dBc below the RF output power level.
M x N Spurious Outputs for LSB, IF = 2.0 GHz
LO = 9 – 13 GHz, 3 – 9 dBm, 25 °C
M x fLO
N
-5
-4
-3
-2
-1
0
1
2
3
4
5
0
1
2
3
4
5
------89
83
82
79
84
86
85
84
82
81
12
75
75
74
76
77
79
76
77
74
0
19
12
73
67
69
67
70
74
70
66
63
4
63
61
60
63
59
60
63
59
64
58
33
57
61
60
60
58
63
61
60
61
61
53
60
57
----
M x N Spurious Outputs for USB, IF = 2.0 GHz
LO = 8 –12 GHz, 3 – 9 dBm, 25 °C
M x fLO
N
-5
-4
-3
-2
-1
0
1
2
3
4
5
0
1
2
3
4
5
------69
88
85
85
85
89
88
88
84
76
26
59
77
79
79
79
77
76
79
68
14
-13
0
66
74
71
69
76
78
73
72
53
6
42
61
64
66
62
65
65
64
61
54
32
61
63
59
65
63
62
62
64
62
65
55
63
64
66
65
61
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
- 18 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Typical Performance - Spur Tables, IF 3.3 GHz
Spur Tables
Spur tables are N  fIF – M  fLO mixer spurious products for -10 dBm IF input power.
RF is at 1IF x 2LO.
All values in dBc below the RF output power level.
M x N Spurious Outputs for LSB, IF = 3.3 GHz
LO = 10 – 15 GHz, 3 – 9 dBm, 25 °C
M x fLO
N
-5
-4
-3
-2
-1
0
1
2
3
4
5
0
1
2
3
4
5
------75
84
83
79
76
84
86
87
83
49
-3
37
77
75
74
69
80
79
78
71
0
20
11
64
62
59
62
73
68
70
63
38
27
61
63
60
60
64
64
61
64
61
63
37
62
63
58
---
62
64
61
66
65
53
------
M x N Spurious Outputs for USB, IF = 3.3 GHz
LO = 11 – 15.5 GHz, 3 – 9 dBm, 25 °C
M x fLO
N
-5
-4
-3
-2
-1
0
1
2
3
4
5
0
1
2
3
4
5
------59
86
85
80
77
84
85
88
86
78
25
52
77
78
78
71
87
82
79
72
10
-14
0
60
69
68
62
77
77
79
74
43
1
35
64
63
61
60
74
74
69
55
21
-24
33
63
61
61
63
61
66
63
63
51
49
63
62
62
61
60
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
- 19 of 28-
Disclaimer: Subject to change without notice
www.triquint.com
TGC4510-SM
K Band Upconverter
Pin Description
28
27
26
24
23
22
1
21
2
20
3
19
18
29
4
5
17
6
16
7
15
8
Pin
25
Symbol
9
10
11
12
13
14
Description
9,13,27
GND
2
RF OUT
3,11,19,20,24
NC
4
VCTRL2
Variable gain control for RF amplifier
5
VCTRL1
Variable gain control for RF amplifier
6
VGRF
10
IF2
IF input for upconverter
12
IF1
16
LO IN
IF input for upconverter
LO input for upconverter.
17
VDLO1
Drain voltage for the first stage of the LO doubler
18
VGLO
Gate bias for VDLO1 and VDLO23.
23
VDLO23
25
VGX
26
VDRF
3,11,19,20,24
1,7,8,14,15,21,
22, 28,29
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
These pins are tied to Pad 29 GND internally.
RF input, matched to 50 ohms
No internal connection; can be grounded on PCB or left open
Gate voltage for RF amplifier
Drain voltage for stages 2 and 3 of LO doubler
Mixer bias voltage
Drain voltage for the RF amplifier
N/C
No internal connection; can be grounded on PCB or left open
GND
Backside paddle. Multiple vias should be employed to minimize
inductance and thermal resistance; see ‘PCB Mounting Pattern’ on
page 25 for suggested footprint.
- 20 of 28-
Disclaimer: Subject to change without notice
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TGC4510-SM
K Band Upconverter
Application Circuit
R6
0 Ohm
C20
1 uF
C19
1 uF
C18
1 uF
C15
0.01 uF
C14
0.01 uF
C13
0.01 uF
C9
100 pF
C8
100 pF
C7
100 pF
28
27
26
25
24
VDLO23
23
22
1
RF OUT
2
See Note A
3
VCTRL2
C3
100 pF
C4
100 pF
VCTRL1
VGRF
21
20
Variable
Gain
Amplifer
19
4
18
5
17
Image
Reject
Mixer
6
C23
10 uF
C10
0.01 uF
16
x2
LO
Doubler
7
C6
100 pF
C12
0.01 uF
C17
1 uF
C11
0.01 uF
C16
1 uF
R5
0 Ohm
C5
100 pF
'A'
9
10
L1
15 nH
'B'
Vi
C21
2.2 uF
C1
C2
100 pF 100 pF
X1
11
12
'A'
'B'
13
VDLO1
15
See Note A
8
VGLO
LO IN
14
L2
15 nH
Vq
C22
2.2 uF
C1
C2
100 pF 100 pF
X1
R3
50 Ohm
R4
50 Ohm
R2
0 Ohm
R1
0 Ohm
See Note A
USB
IF Input
See Note A
LSB
IF Input
Note A: 50 Ω microstrip transmission line
Bias-up Procedure
Bias-down Procedure
Set VGX to -1.2 V
Set VCTRL1 to -2.0 V
Set VCTRL2 to 0.0 V
Set VGLO to -1.2 V
Set VDLO1 and VdLO23 to 3.3 V
Set VGRF to -1.2 V
Set VDRF to 5.0 V
Adjust VGRF from -1.2 V towards -0.2 V until current
drawn by VDRF is 345.0 mA
If using external bias voltages for LO nulling, adjust Vi, Vq
to final value for maximum LO suppression.
Set VDLO1, VDLO23, VDRF to 0 V
Set Vi, Vq to 0 V; if used for LO suppression
Set VGLO, VGRF, VGX to 0 V
Set VCTRL1, VCTRL2 to 0 V
See performance charts on page 13 ‘Typical Performance
– External LO Nulling’ for typical voltages
Data Sheet: Rev E 09/11/14
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TGC4510-SM
K Band Upconverter
Application Circuit
PC Board Layout
Single core layer board using 0.008” thick Rogers RO4003, Єr = 3.38. Metal layers are 0.5-oz copper with
patterning on top layer as shown. Bottom layer is unpatterned and is the RF and DC ground. For further technical
information, refer to the TGC4510-SM Product Information page.
R5
C19
C20
C18
R6
C14
C17
C13
C15
C12
C9
C8
C7
C6
Q1
C5 C11 C16
C4
L1
L2
C1
C2
C3
C10
C23
C21
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
X1
R4
R1
- 22 of 28-
R3
R2
C22
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TGC4510-SM
K Band Upconverter
Bill of Material
Ref Des
Value
U1
X1
Case FV1206-1
Description
Manufacturer Part Number
Ku Band Upconverter
TriQuint
TGC4510-SM
Quadrature Hybrid
MiniCircuits
QCN25+
C1, C1
1350-2450MHz
10 pF
C3 thru C9
100 pF
Cap, 0402, 50 V, 5%, C0G SMD
various
C10 thru C15
.01 µF
Cap, 0603, 25 V, 10%, X5R SMD
various
C16 thru C20
1.0 µF
Cap, 0805, 25 V, 10%, X5R SMD
various
C21, C22
2.2 µF
Cap, 0805, 25 V, 10%, X5R SMD
various
C23
2.2 µF
Cap, 0805, 25 V, 10%, X5R SMD
various
R1 1/
0Ω
Res, 0402, 0.06 W, 5%, SMD
various
R3 1/
50 Ω
Res, 0402, 0.06 W, 5%, SMD
various
R2, R4 1/
Cap, 0402, 50 V, 5%, C0G SMD
No Pop
R2 2/
0Ω
Res, 0402, 0.06 W, 5%, SMD
R4 2/
50 Ω
Res, 0402, 0.06 W, 5%, SMD
R1, R3 2/
No Pop
R5, R6
0Ω
Res, 0603, 0.06 W, 5%, SMD
various
L1, L2
15 nH
Inductor, 0402
Digi-Key
535-10392-1-ND
1/ Configuration for upconverted RF using Lower Side Band
2/ Configuration for upconverted RF using Upper Side Band
Data Sheet: Rev E 09/11/14
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TGC4510-SM
K Band Upconverter
Mechanical Information
Package Marking and Dimensions
All dimensions are in millimeters.
A
4510
YYWW
XXXX
A
This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the leads is NiPdAu.
It is compatible with lead-free (maximum 260 °C reflow temperature) soldering processes.
The TGC4510-SM will be marked with the “4510” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an autogenerated number
Data Sheet: Rev E 09/11/14
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TGC4510-SM
K Band Upconverter
Mechanical Information
PCB Mounting Pattern
27 26 25 24 23
2
3
4
5
6
20
19
18
17
16
9 10 11 12 13
Notes:
1.
2.
The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary
from company to company, careful process development is recommended.
Ground vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter of .25 mm (.010”).
Data Sheet: Rev E 09/11/14
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TGC4510-SM
K Band Upconverter
Tape and Reel Information
Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes”
section.
Standard T/R size = 500 pieces on a 7” reel.
CARRIER AND COVER TAPE DIMENSIONS
Part
Feature
Cavity
Length
Width
Depth
Pitch
Width
Width
Cover Tape
Carrier Tape
Symbol
Size (in)
Size (mm)
A0
B0
K0
P1
C
W
0.209
0.209
0.064
0.315
0.362
0.472
5.3
5.3
1.65
8.00
9.2
12.00
Vendor: Tek-Pak P/N QFN0500x0500F-L500
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
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TGC4510-SM
K Band Upconverter
Product Compliance Information
ESD Information
Solderability
Compatible with lead-free soldering processes,
260° maximum reflow temperature.
ESD Rating:
Value:
Test:
Standard:
1A
Passes  250 V and < 300 V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Package lead plating: NiPdAu
The use of no-clean solder to avoid washing after
soldering is recommended.
This package is not compatible with solder
containing lead.
MSL Rating
Moisture Sensitivity Level (MSL) 1 at 260°C convection
reflow per JEDEC standard IPC/JEDEC J-STD-020.
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and
Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Recommended Soldering Temperature Profile
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
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TGC4510-SM
K Band Upconverter
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: info-sales@tqs.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-networks@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the
information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information
contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the
entire risk associated with such information is entirely with the user. All information contained herein is subject to
change without notice. Customers should obtain and verify the latest relevant information before placing orders for
TriQuint products. The information contained herein or any use of such information does not grant, explicitly or
implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to
such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe
personal injury or death.
Data Sheet: Rev E 09/11/14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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