QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Product Description
Qorvo’s QPA1000 is a high-power, S-band amplifier
fabricated on Qorvo’s QGaN25 0.25um GaN on SiC
production process. Covering 2.8-3.2 GHz, the QPA1000
typically provides 47 dBm of saturated output power and 22
dB of large-signal gain while achieving 58 % power-added
efficiency.
The QPA1000 can also support a variety of operating
conditions to best support system requirements. With good
thermal properties, it can support a range of bias voltages
and will perform well under pulse applications. The
QPA1000 is matched to 50 ohms with integrated DC
blocking caps on both I/O ports. It is ideal for use in both
commercial and military radar systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Product Features







Frequency Range: 2.8 – 3.2 GHz
Pout: 47 dBm (PIN = 25 dBm)
Large Signal Gain: 22 dB (PIN = 25 dBm)
PAE: 58 % (PIN = 25 dBm)
Bias: VD = 25 V, IDQ = 200 mA, VG = −2.8 V (Typ)
Supports Long Pulse Operation
Package Dimensions: 7.0 x 7.0 x 0.85 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
48 47 46 45 44 43 42 41 40 39 38 37
Applications
1
36
2
35
3
34
4
33
5
32
 Military Radar
 Commercial Radar
RF In 6
31 RF Out
RF In 7
30 RF Out
8
29
9
28
10
27
11
26
12
25
13 14 15 16 17 18 19 20 21 22 23 24
Data Sheet Rev. B July 25, 2016
Ordering Information
Part
ECCN
Description
QPA1000
EAR99
2.8–3.2 GHz 50 W GaN
Power Amplifier
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Electrical Specifications
Test conditions, unless otherwise noted: 25 °C, VD = 25 V, IDQ = 200 mA, Pulse Width = 100 us, Duty Cycle = 10%
Parameter
Operational Frequency Range
Min
Typ
Max
Units
2.8
3.0
3.2
GHz
Output Power @ PIN = 25 dBm Frequency = 3.0 GHz
47
dBm
Power Added Efficiency
@ PIN = 25 dBm
Frequency = 3.0 GHz
58
%
Small Signal Gain
Frequency = 3.0 GHz
25
dB
Input Return Loss
Frequency = 3.0 GHz
11
dB
Output Return Loss
Frequency = 3.0 GHz
13
dB
−0.004
dBm/°C
Output Power Temperature Coefficient
Recommended Operating Drain Voltage
25
V
Recommended Operating Conditions
ConditioConditions
Parameter
Drain Voltage
Drain Current (quiescent, IDQ)
Drain Current (under drive, ID)
Gate Voltage
Operating Temperature Range
Value
25 V
200 mA
3.7 A
-2.8 V
−40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Data Sheet Rev. B July 25, 2016
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 25 V, IDQ = 200 mA, PW = 100 us, Duty Cycle = 10%
Output Power vs. Freq. vs. Temp.
48
47
46
-40 C
+25 C
+85 C
45
44
2.7
2.8
2.9
3.0
3.1
3.2
3.3
Output Power vs. Freq. vs. Input Power
49
PIN = 25 dBm
48
Output Power (dBm)
Output Power (dBm)
49
47
46
45
25 dBm
23 dBm
26 dBm
24 dBm
44
3.4
2.7
2.8
2.9
Frequency (GHz)
3.0
3.1
3.2
3.3
3.4
Frequency (GHz)
Power Added Eff. vs. Freq. vs. Temp.
70
22 dBm
Power Added Eff. vs. Freq. vs. Input Power
70
60
55
50
-40 C
+25 C
+85 C
45
40
2.7
2.8
2.9
3.0
3.1
3.2
3.3
65
Power Added Eff. (%)
Power Added Eff. (%)
PIN = 25 dBm
65
60
55
50
45
25 dBm
23 dBm
26 dBm
24 dBm
40
3.4
2.7
2.8
2.9
Frequency (GHz)
3.0
3.1
3.2
3.3
3.4
Frequency (GHz)
Drain Current vs. Freq. vs. Temp.
5.0
22 dBm
Drain Current vs. Freq. vs. Input Power
5.0
4.5
Drain Current (A)
Drain Current (A)
PIN = 25 dBm
4.0
3.5
3.0
2.5
4.5
4.0
3.5
3.0
2.5
-40 C
+25 C
+85 C
22 dBm
25 dBm
23 dBm
26 dBm
24 dBm
2.0
2.0
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
Frequency (GHz)
Data Sheet Rev. B July 25, 2016
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
Frequency (GHz)
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Performance Plots – Large Signal (Pulsed)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 25 V, IDQ = 200 mA, PW = 100 us, Duty Cycle = 10%
Output Power vs. Input Power vs. Freq.
50
PAE vs. Input Power vs. Freq.
45
60
Power Added Eff. (%)
Output Power (dBm)
70
40
35
2.8 GHz
30
3.0 GHz
50
40
30
2.8 GHz
20
3.0 GHz
10
3.2 GHz
25
3.2 GHz
2
4
6
8
10
12
14
16
18
20
22
24
0
26
Input Power (dBm)
2
4
6
8
10
12
14
16
18
20
22
24
26
Input Power (dBm)
Gain vs. Input Power vs. Freq.
35
3.5
Drain Current (A)
30
25
Gain (dB)
Drain Current vs. Input Power vs. Freq.
4.0
20
15
2.8 GHz
10
2.5
2.0
1.5
2.8 GHz
1.0
3.0 GHz
5
3.0
3.0 GHz
0.5
3.2 GHz
3.2 GHz
0
0.0
2
4
6
8
10
12
14
16
18
20
22
24
26
2
4
6
8
10
Input Power (dBm)
12
14
16
18
20
22
24
26
Input Power (dBm)
Gate Current vs. Input Power vs. Freq.
Gate Current (mA)
11
9
7
5
2.8 GHz
3
3.0 GHz
3.2 GHz
1
-1
2
4
6
8
10
12
14
16
18
20
22
24
26
Input Power (dBm)
Data Sheet Rev. B July 25, 2016
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Performance Plots – Large Signal (Pulsed)
Output Power vs. Input Power vs. Temp.
50
45
40
35
30
25
20
15
10
5
0
-5
PAE vs. Input Power vs. Temp.
70
Freq. = 3.0 GHz
Freq. = 3.0 GHz
60
Power Added Eff. (%)
Output Power (dBm)
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 25 V, IDQ = 200 mA, PW = 100 us, Duty Cycle = 10%
50
40
30
20
-40 C
+25 C
+85 C
10
-40 C
+25 C
+85 C
0
2
4
6
8
10
12
14
16
18
20
22
24
26
2
4
6
8
10
Input Power (dBm)
Gain vs. Input Power vs. Temp.
35
14
16
18
20
22
24
26
Drain Current vs. Input Power vs. Temp.
4.0
Freq. = 3.0 GHz
Freq. = 3.0 GHz
3.5
Drain Current (A)
30
25
Gain (dB)
12
Input Power (dBm)
20
15
10
5
-5
2
4
6
8
10
12
14
16
18
20
22
24
2.5
2.0
1.5
-40 C
1.0
-40 C
+25 C
+85 C
0
3.0
+25 C
0.5
+85 C
0.0
26
2
4
6
8
10
Input Power (dBm)
12
14
16
18
20
22
24
26
Input Power (dBm)
Gate Current vs. Input Power vs. Temp.
14
Freq. = 3.0 GHz
Gate Current (mA)
12
10
8
6
4
-40 C
2
+25 C
+85 C
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Input Power (dBm)
Data Sheet Rev. B July 25, 2016
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 25 V, IDQ = 200 mA
Gain vs. Freq. vs. Temp.
35
Gain vs. Frequency vs. VD
30
28
30
26
24
S21 (dB)
S21 (dB)
25
20
15
22
20
18
16
10
14
5
-40 C
+25 C
12
+85 C
0
22 V
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
2.2
2.4
2.6
2.8
Frequency (GHz)
26 V
3.0
3.2
3.4
3.6
3.8
4.0
3.8
4.0
3.8
4.0
Input RL vs. Frequency vs. VD
0
-5
-5
-10
-10
S11 (dB)
S11 (dB)
25 V
Frequency (GHz)
Input RL vs. Freq. vs. Temp.
0
-15
-20
-15
-20
-25
-25
-40 C
+25 C
22 V
+85 C
-30
24 V
25 V
26 V
-30
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
2.2
2.4
2.6
2.8
Frequency (GHz)
3.0
3.2
3.4
3.6
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
0
Output RL vs. Frequency vs. VD
0
-5
-5
-10
-10
S22 (dB)
S22 (dB)
24 V
10
-15
-15
-20
-20
-25
-25
-40 C
+25 C
22 V
+85 C
24 V
25 V
26 V
-30
-30
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
Data Sheet Rev. B July 25, 2016
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
Frequency (GHz)
Frequency (GHz)
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: Temp. = 25 °C, VD = 25 V, IDQ = 200 mA
Gain vs. Frequency vs. IDQ
35
30
-5
25
-10
S11 (dB)
S21 (dB)
Input RL vs. Freq. vs. IDQ
0
20
15
-15
-20
10
-25
5
100 mA
200 mA
100 mA
300 mA
0
200 mA
300 mA
-30
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
2.2
2.4
2.6
Frequency (GHz)
2.8
3.0
3.2
3.4
3.6
3.8
4.0
Frequency (GHz)
Output RL vs. Freq. vs. IDQ
0
-5
S22 (dB)
-10
-15
-20
-25
100 mA
200 mA
300 mA
-30
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
Frequency (GHz)
Data Sheet Rev. B July 25, 2016
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (Quiescent)
Median Lifetime (TM)
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (Under RF drive)
Median Lifetime (TM)
Thermal Resistance (θJC)
(1)
Channel Temperature (TCH) (Under RF drive)
Median Lifetime (TM)
Notes:
1.
Test Conditions
Value
Units
Tbase = 85°C
VD = 25 V, IDQ = 200 mA
PDISS = 5.0 W
1.4
92.0
2.90E12
0.85
°C/W
°C
Hrs
118.0
°C
1.03E11
Hrs
0.88
°C/W
123.0
°C
5.43E10
Hrs
Tbase = 85°C, VD = 25 V, IDQ = 200 mA, Freq = 2.8 GHz,
ID_Drive = 3.6 A, PIN = 26 dBm, POUT = 46.6 dBm,
PDISS = 33.9 W, PW = 100 us, DC = 10%
Tbase = 85°C, VD = 25 V, IDQ = 200 mA, Freq = 3.1 GHz,
ID_Drive = 3.8 A, PIN = 26 dBm, POUT = 47.1 dBm,
PDISS = 39.4 W, PW = 100 us, DC = 10%
°C/W
Thermal resistance measured to back of package.
Median Lifetime
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
QPA1000 Pdiss vs. Frequency
QGaN25 Median Lifetime vs. TCH
45
40
Disspiated Power (W)
Median Lifetime (Hours)
Test Conditions: VD = +40 V; Failure Criteria = 10 % reduction in ID_MAX during DC Life Testing
35
30
25
20
15
22V 100us 10% 25C
10
24V 100us 10% 25C
25V 100us 10% 25C
5
25V 100us 10% 85C
FET13
25
0
50
75
100
125
150
175
200
225
250
275
Channel Temperature (°C)
Data Sheet Rev. B July 25, 2016
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2.7
2.8
2.9
3.0
3.1
Frequency (GHz)
3.2
3.3
3.4
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Applications Circuit
R4
10 Ω
VG1
C3
1000 pF
VD1
R6
0Ω
48
46
C6
1000 pF
RF In
C16
1000 pF
VD1
VG1
C9
1000 pF
44
38
C12
1000 pF
C8
0.01 uF
R7
0Ω
R8
10 Ω
C7
10 uF
VG2
VD2
C11
0.01 uF
R10
10 Ω
30,31
6,7
RF Out
R19
10 Ω
13
15
17
23
R17
0Ω
C13
1000 pF
C23
0.01 uF
C22
1000 pF
R13
10 Ω
C19
1000 pF
VD2
R16
10 Ω
C21
10 uF
C20
0.01 uF
R18
0Ω
VG2
Notes:
1. VG and VD must be biased from both sides (top and bottom).
Bias Up Procedure
Bias Down Procedure
1. Set ID limit to 6000mA, IG limit to 40mA
1. Turn off RF supply
2. Set VG to −6.0 V
2. Reduce VG to −6.0V. Ensure IDQ ~ 0mA
3. Set VD +25 V
4. Adjust VG more positive until IDQ = 200mA (VG ~
−2.8 V Typical)
5. Apply RF signal
3. Set VD to 0 V
Data Sheet Rev. B July 25, 2016
4. Turn off VD supply
5. Turn off VG supply
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Evaluation Board and Mounting Detail
C13
C16
C19
R16
C20
R13
R17
VG1
VD1
GND
VG2
GND
VD2
C7
R7
C11
R10
C12
C22
R19
C23
R18
C21
VG1
VD1
GND
VG2
GND
VD2
R6
R4
C8
R8
C9
C6
C3
Mounting Detail
RF Layer is 0.008” thick Rogers Corp. RO40003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the
connector interface is optimized for the Southwest Microwave end launch connector 1092-02A-5.
Bill of Materials
Ref. Des.
Component
Value
Manuf. Part Number
C7, C21
C3, C6, C9, C12, C13,
C16, C19, C22
C8, C11, C20, C23
R8, R10, R16, R19
R4, R13
R6, R7, R16, R18
Surface Mount Cap.
CAP, 1206, 10uF, 20%, 50V, 20%, X5R
Various
Surface Mount Cap.
CAP, 0402, 1000pF, 10%, 100V, X7R
Various
Surface Mount Cap.
Surface Mount Res.
Surface Mount Res.
Surface Mount Res.
CAP, 0402, 0.01uF, ±10%, 50V, X7R
RES, 10 OHM ± 5% 0402
RES, 10 OHM 1/10W ± 5% 0603
RES, 0 OHM 5% 0603
Various
Various
Various
Various
Data Sheet Rev. B July 25, 2016
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Mechanical Information
12
11
10
13 14 15 16 17 18
1
2
3
9 8 7 6 5 4
NOTES:
PACKAGE METAL BASE AND LEADS
ARE GOLD PLATED.
PART MARKING:
QPA1000: PART NUMBER
YY: PART ASSY YEAR
WW: PART ASSY WEEK
MXXX: LOT NUMBER
DIMENSIONS IN MM
Pin Description
Symbol
Description
1-5, 8-12, 14, 16, 18-22, 24-29,
32-37, 39-43, 45, 47
Pin Number
NC
No connection. Can be grounded on PCB if desired.
6, 7
RF Input
13, 48
VG1
15, 46
VD1
17, 44
VG2
23, 38
VD2
30, 31
RF Output
49
GND
Data Sheet Rev. B July 25, 2016
50 Ohm RF input. Pad is capacitively coupled to block on-chip
DC voltages.
1st Stage Gate Voltage; bias network is required; must be biased
from both sides (VG1 and VG2 can be tied together in application)
1st Stage Drain Voltage; bias network is required; must be biased
from both sides (VD1 and VD2 can be tied together in application)
2nd Stage Gate Voltage; bias network is required; must be biased
from both sides (VG1 and VG2 can be tied together in application)
2nd Stage Drain Voltage; bias network is required; must be
biased from both sides (VD1 and VD2 can be tied together in
application)
50 Ohm RF output. Pad is capacitively coupled to block on-chip
DC voltages. Pad is DC grounded.
Ground connection.
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Absolute Maximum Ratings
Value / Range
40 V
0.77/3.84 A
−8 to 0 V
See IG_Max plot
44.25 W
33 dBm
33 dBm
275 °C
260 °C
−55 to 150 °C
QPA1000 Ig_max vs. TCH vs. Stage
160
Maximum Gate Current (mA)
Parameter
Drain Voltage (VD)
Drain Current (ID1/ID2)
Gate Voltage Range
Gate Current (IG)
Dissipated Power (PDISS)1
Input Power (50 Ω, 85 °C)
Input Power (9:1 VSWR, 85 °C)
Channel Temperature, TCH
Mounting Temperature (30 seconds)
Storage Temperature
Note:
1 T
BASE = 85 °C, TCH = 225 °C
140
120
100
Stage 1
Stage 2
Total Ig_max
80
60
40
20
0
Operation of this device outside the parameter ranges given above
may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied.
120 130 140 150 160 170 180 190 200 210 220 230
Channel Temperature ( C)
Recommended Soldering Temperature Profile
Data Sheet Rev. B July 25, 2016
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QPA1000
2.8 – 3.2 GHz 50 Watt GaN Amplifier
Handling Precautions
Parameter
Rating
Standard
ESD – Human Body Model (HBM)
Class 0B
ANSI/ESD/JEDEC JS-001
ESD – Charge Device Model (CDM)
Class C3
ANSI/ESD/JEDEC JS-002
MSL – Moisture Sensitivity Level
Level 3
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
Solderability
Compatible with the latest version of J-STD-020 Lead free solder, 260 °C.
Solder profiles available upon request.
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following
attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)





Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Qorvo Green
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
For technical questions and application information:
Email: sjcapplications.engineering@qorvo.com
Important Notice
The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained
herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes
no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is
provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user.
All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant
information before placing orders for Qorvo products. The information contained herein or any use of such information does
not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether
with regard to such information itself or anything described by such information.
Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. B July 25, 2016
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