MDS-GN-650 ELM Rev 1
MDS-GN-650ELM
650 Watts - 65 Volts, Mode-S ELM
Avionics 1030-1090 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55-KR
Common Source
The MDS-GN-650ELM is an internally matched, COMMON SOURCE, class
AB GaN on SiC high power transistor specifically designed for Mode-S ELM
systems. It is capable of providing over 21dB gain, 650 Watts of pulsed RF
output power using Mode-S ELM pulsing at 1030-1090 MHz. The transistor has
internal pre-match for optimal performance. This hermetically sealed transistor
is specifically designed for Mode-S ELM Avionics applications. It utilizes gold
metallization and eutectic attach to provide highest reliability and superior
ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
1000 W
Device Dissipation @ 25C
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
150 V
Gate-Source Voltage (VGS)
-8 to +0 V
Maximum Temperatures
-55 to +125 C
Storage Temperature (TSTG)
Operating Junction Temperature
+200 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol
Pout
Gp
d
R/L
VSWR-T
Өjc
Characteristics
Output Power
Power Gain
Drain Efficiency
Input Return Loss
Load Mismatch Tolerance
Thermal Resistance
Test Conditions
Freq=1030-1090 MHz, Mode-S ELM
Freq=1030-1090 MHz, Mode-S ELM
Freq=1030-1090 MHz, Mode-S ELM
Freq=1030-1090 MHz, Mode-S ELM
Pout=650W, Freq= 1030MHz
Pulse Width=128uS, Duty=10%
Min
650
20.8
65
-8
Max
3:1
0.25

Mode-S ELM pulse format – 32us (on) / 18us (off) x 48, Period = 24ms, LTDF=6.4%

Data taken at pulse #1
Bias Condition: Vdd=+65V, Idq=100mA average current (Vgs= -2.0 ~ -4.5V typical)

Typ
685
21.4
67
Units
W
dB
%
dB
°C/W
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off)
IG(Off)
BVDSS
Drain leakage current
Gate leakage current
Drain-source breakdown voltage
VgS = -8V, VD = 65V
VgS = -8V, VD = 0V
Vgs =-8V, ID = 10mA
10
8
250
mA
mA
V
Issue March 2012
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
MDS-GN-650 ELM Rev 1
MDS-GN-650ELM
650 Watts - 65 Volts, Mode-S ELM
Avionics 1030-1090 MHz
TYPICAL RF PERFORMACE DATA
Frequency
Pin (W)
Pout (W)
Id (A)
RL (dB)
Nd (%)
G (dB)
1030 MHz
5
701
0.982
-9.9
70.3
21.46
Droop
(dB)
0.2
1060 MHz
5
704
0.962
-11.2
72.1
21.48
0.2
1090 MHz
5
696
0.931
-23.2
73.7
21.43
0.2
Typical RF Performance Plots
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
MDS-GN-650 ELM Rev 1
MDS-GN-650ELM
650 Watts - 65 Volts, Mode-S ELM
Avionics 1030-1090 MHz
Transistor Impedance Information
Note: Z in is looking into the input circuit;
Z Load is looking into the output circuit.
Impedance Data
Freq (GHz)
Zs
Zl
1.03
1.928 - j1.3
1.913 – j0.375
1.06
1.872 - j1.29
2.028 - j0.265
1.09
1.782 - j1.273
2.146 - j0.186
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
MDS-GN-650 ELM Rev 1
MDS-GN-650ELM
650 Watts - 65 Volts, Mode-S ELM
Avionics 1030-1090 MHz
Test Circuit Diagram
Board Material: Roger Duriod 6006 @ 25 Mil Thickness, Er=6.15
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
MDS-GN-650 ELM Rev 1
MDS-GN-650ELM
650 Watts - 65 Volts, Mode-S ELM
Avionics 1030-1090 MHz
55-KR Package Dimension
Dimension
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Min (mil)
370
498
700
830
1030
101
151
385
130
003
135
105
085
065
Min (mm)
9.40
12.65
17.78
21.08
26.16
2.56
3.84
9.78
3.30
.076
3.43
2.67
2.16
1.65
Max (mil)
372
500
702
832
1032
102
152
387
132
004
137
107
86
66
Max (mm)
9.44
12.7
17.83
21.13
26.21
2.59
3.86
9.83
3.35
0.10
3.48
2.72
2.18
1.68
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.