FQPF13N06L
N-Channel QFET® MOSFET
60 V, 10 A, 110 mΩ
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
• 10 A, 60 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V,
ID = 5 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
G
G
D
S
TO-220F
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
FQPF13N06L
60
Unit
V
10
A
7.1
A
40
A
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
10
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
2.4
7.0
24
0.16
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
FQPF13N06L
6.20
Unit
°C/W
62.5
°C/W
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
± 20
V
90
mJ
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
©2001 Fairchild Semiconductor Corporation
FQPF13N06L Rev. C1
1
www.fairchildsemi.com
FQPF13N06L — N-Channel QFET® MOSFET
November 2013
Part Number
FQPF13N06L
Top Mark
FQPF13N06L
Package
TO-220F
Electrical Characteristics
Symbol
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
60
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
--
0.05
--
V/°C
VDS = 60 V, VGS = 0 V
--
--
1
μA
VDS = 48 V, TC = 150°C
--
--
10
μA
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
1.0
--
2.5
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5 A
VGS = 5 V, ID = 5 A
---
0.088
0.110
0.11
0.14
Ω
gFS
Forward Transconductance
VDS = 25 V, ID = 5 A
--
5.5
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
270
350
pF
--
95
125
pF
--
17
23
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
)
VDD = 30 V, ID = 6.8 A,
RG = 25 Ω
(Note 4)
VDS = 48 V, ID = 13.6 A,
VGS = 5 V
(Note 4)
--
8
25
ns
--
90
190
ns
--
20
50
ns
--
40
90
ns
--
4.8
6.4
nC
--
1.6
--
nC
--
2.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
10
A
ISM
--
--
40
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 10 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
45
--
ns
Qrr
Reverse Recovery Charge
--
45
--
nC
VGS = 0 V, IS = 13.6 A,
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 1.05 mH, IAS = 10 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 13.6 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2001 Fairchild Semiconductor Corporation
FQPF13N06L Rev. C1
2
www.fairchildsemi.com
FQPF13N06L — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
1
10
1
ID, Drain Current [A]
ID, Drain Current [A]
Top :
10
0
10
175℃
25℃
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
0
10
※ Notes :
1. VDS = 25V
2. 250μs Pulse Test
-55℃
-1
-1
0
10
10
1
10
0
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
IDR, Reverse Drain Current [A]
R DS(O N) [m Ω ],
Drain-Source On-Resistance
250
VGS = 5V
150
VGS = 10V
100
50
※ Note : TJ = 25℃
0
0
10
20
30
40
1
10
0
10
175℃
-1
10
ID, Drain Current [A]
0.2
V G S, Gate-Source Voltage [V]
Capacitance [pF]
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
400
Crss
10
0
1
10
1.2
1.4
1.6
VDS = 30V
6
4
2
※ Note : ID = 13.6A
0
2
4
6
8
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
FQPF13N06L Rev. C1
1.0
VDS = 48V
8
0
10
0.8
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
0
-1
10
0.6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
600
200
0.4
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
800
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQPF13N06L — N-Channel QFET® MOSFET
Typical Characteristics
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.0
1.1
1.5
1.0
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
0.5
150
※ Notes :
1. VGS = 10 V
2. ID = 6.8 A
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
15
Operation in This Area
is Limited by R DS(on)
2
10
ID, Drain Current [A]
ID, Drain Current [A]
12
100 μs
1 ms
10 ms
1
10
DC
0
10
※ Notes :
o
1. TC = 25 C
9
6
3
o
2. TJ = 175 C
3. Single Pulse
-1
10
-1
0
10
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
(t),Thermal
Therm al
Response
ZZθJC
(t),
Response
[oC/W]
θ JC
75
100
125
150
175
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
0 .2
※ N otes :
1 . Z θ J C( t ) = 3 . 3 5 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .1
0 .0 5
10
0 .0 2
0 .0 1
-1
PDM
s in g le p u ls e
10
t1
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
FQPF13N06L Rev. C1
4
www.fairchildsemi.com
FQPF13N06L — N-Channel QFET® MOSFET
Typical Characteristics (continued)
50KΩ
200nF
12V
FQPF13N06L — N-Channel QFET® MOSFET
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
V
10V
GS
GS
ID (t)
VDS (t)
VDD
DUT
tp
tp
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2001 Fairchild Semiconductor Corporation
FQPF13N06L Rev. C1
5
www.fairchildsemi.com
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
VGS
( Driver )
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2001 Fairchild Semiconductor Corporation
FQPF13N06L Rev. C1
6
www.fairchildsemi.com
FQPF13N06L — N-Channel QFET® MOSFET
DUT
FQPF13N06L — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2001 Fairchild Semiconductor Corporation
FQPF13N06L Rev. C1
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2001 Fairchild Semiconductor Corporation
FQPF13N06L Rev. C1
8
www.fairchildsemi.com
FQPF13N06L — N-Channel QFET® MOSFET
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