HY62LF16404D Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM
Revision History
Revision No
History
Draft Date
Remark
00
Initial Draft
Dec.20.2000
Preliminary
01
Changed Logo
Mar.23.2001
Preliminary
02
Changed Isb1 values
Changed part No Q -> L
Jun.07.2001
Preliminary
03
Changed Package Size (6.1mm -> 6.0mm)
Aug.07.2001
Preliminary
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev.03 / Aug.01
Hynix Semiconductor
HY62LF16404D Series
Preliminary
DESCRIPTION
FEATURES
The HY62LF16404D is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
256K words by 16bits. The HY62LF16404D uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.5V.
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup
-. 1.5V(min) data retention
• Standard pin configuration
-. 48-ball FBGA
Voltage
(V)
Product No.
Speed (ns)
Operation
Current/Icc(mA)
HY62LF16404D-I
2.3~2.7
70/85
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
3
PIN CONNECTION
H
5
A2
NC
IO9
/UB
A3
A4
/CS
IO1
IO10 IO11 A5
A6
IO2
IO3
Vss
IO12 A17
A7
IO4
Vcc
Vcc
IO13 NC
A16
IO5
Vss
IO15 IO14 A14
A15
IO6
IO7
IO16 NC
A12
A13
/WE IO8
NC
A9
A10
A11
A8
6
NC
FBGA
ROW
DECODER
A0
MEMORY ARRAY
256K x 16
A17
I/O1
I/O8
DATA I/O
BUFFER
G
4
A1
WRITE DRIVER
F
3
A0
BLOCK
DECODER
E
2
/OE
PRE DECODER
D
1
/LB
ADD INPUT
BUFFER
C
-40~85
BLOCK DIAGRAM
COLUMN
DECODER
B
Temperature
(°C)
SENSE AMP
A
Standby
Current(uA)
LL
SL
10
5
I/O9
I/O16
/CS
/OE
/LB
/UB
/WE
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Rev.03 / Aug.01
Pin Function
Chip Select
Write Enable
Output Enable
Lower Byte Control (I/O1~I/O8)
Upper Byte Control (I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A17
Vcc
Vss
NC
Pin Function
Data Inputs/Outputs
Address Inputs
Power (2.3~2.7)
Ground
No Connection
2
HY62LF16404D Series
ORDERING INFORMATION
Part No.
HY62LF16404D-DF(I)
HY62LF16404D-SF(I)
Speed
70/85
70/85
Power
LL-part
SL-part
Temp.
I
I
Package
FBGA
FBGA
Note 1. Blank : Commercial, I : Industrial
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
VIN, VOUT
Vcc
TA
TSTG
PD
TSOLDER
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.3 to 3.0
-0.3 to 4.0
40 to 85
-55 to 150
1.0
260 • 10
Unit
V
V
°C
°C
W
°C•sec
Remark
HY62LF16404D-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS
/WE
/OE
/LB
/UB
H
X
X
X
X
X
L
H
H
L
H
L
L
L
X
X
H
L
X
L
H
L
L
H
L
X
H
X
L
H
L
L
H
L
L
Mode
I/O Pin
I/O1~I/O8
I/O9~I/O16
Power
Deselected
High-Z
High-Z
Standby
Output Disabled
High-Z
High-Z
Active
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
DOUT
DOUT
High-Z
DIN
DIN
Read
Write
Active
Active
Note:
1. H=VIH, L=VIL, X=don't care (VIL or VIH)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When /UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
Rev.03 / Aug.01
2
HY62LF16404D Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.3
0
2.0
-0.31.
Typ
2.5
0
-
Max.
2.7
0
Vcc+0.3
0.6
Unit
V
V
V
V
Note : 1. Undershoot : VIL = -1.5V for pulse width less than 30ns
2. Undershoot is sampled, not 100% tested.
DC ELECTRICAL CHARACTERISTICS
TA = -40°C to 85°C
Sym
Parameter
ILI
Input Leakage Current
ILO
Output Leakage Current
Icc
Operating Power Supply Current
ICC1
ISB
ISB1
VOL
VOH
Average Operating Current
Standby Current (TTL Input)
Standby Current (CMOS Input)
Output Low
Output High
Test Condition
Vss < VIN < Vcc
Vss < VOUT < Vcc, /CS = VIH or
/OE = VIH or /WE = VIL or
/UB = VIH , /LB = VIH
/CS = VIL,
VIN = VIH or VIL, II/O = 0mA
/CS = VIL,
VIN = VIH or VIL, Cycle Time = Min,
100% Duty, II/O = 0mA
/CS < 0.2V,
VIN < 0.2V or VIN > Vcc-0.2V,
Cycle Time = 1us,
100% Duty, II/O = 0mA
/CS = VIH or /UB, /LB = VIH
VIN = VIH or VIL
/CS > Vcc - 0.2V or
SL
/UB, /LB > Vcc - 0.2V
VIN > Vcc - 0.2V or
LL
VIN < Vss + 0.2V
IOL = 0.5mA
IOH = -0.5mA
Min
-1
Typ1.
-
Max
1
Unit
uA
-1
-
1
uA
3
mA
25
3
mA
mA
0.3
mA
0.2
5
uA
0.2
10
uA
-
0.4
-
V
V
2.0
Note
1. Typical values are at Vcc = 2.5V TA = 25°C
2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
CIN
Input Capacitance(Add, /CS,/LB,/UB, /WE, /OE)
COUT
Output Capacitance(I/O)
Condition
VIN = 0V
VI/O = 0V
Max.
8
10
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev.03 / Aug.01
3
HY62LF16404D Series
AC CHARACTERISTICS
TA = -40°C to 85°C, unless otherwise specified
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Symbol
70ns
Min.
Max.
Parameter
READ CYCLE
tRC
Read Cycle Time
tAA
Address Access Time
tACS
Chip Select Access Time
tOE
Output Enable to Output Valid
tBA
/LB, /UB Access Time
tCLZ
Chip Select to Output in Low Z
tOLZ
Output Enable to Output in Low Z
tBLZ
/LB, /UB Enable to Output in Low Z
tCHZ
Chip Deselection to Output in High Z
tOHZ
Out Disable to Output in High Z
tBHZ
/LB, /UB Disable to Output in High Z
tOH
Output Hold from Address Change
WRITE CYCLE
tWC
Write Cycle Time
tCW
Chip Selection to End of Write
tAW
Address Valid to End of Write
tBW
/LB, /UB Valid to End of Write
tAS
Address Set-up Time
tWP
Write Pulse Width
tWR
Write Recovery Time
tWHZ
Write to Output in High Z
tDW
Data to Write Time Overlap
tDH
Data Hold from Write Time
tOW
Output Active from End of Write
85ns
Min.
Max.
Unit
70
10
5
10
0
0
0
10
70
70
35
70
30
30
30
-
85
10
5
10
0
0
0
10
85
85
40
85
30
30
30
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
70
60
60
60
0
50
0
0
30
0
5
20
-
85
70
70
70
0
60
0
0
35
0
5
25
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
TA = -40°C to 85°C, unless otherwise specified
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load tCLZ, tOLZ, tBLZ, tCHZ, tOHZ, tBHZ, tWHZ, tOW
Others
Value
0.4V to 2.2V
5ns
1.1V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
VTM=2.3V
3067 Ohm
DOUT
CL(1)
3345 Ohm
Note 1. Including jig and scope capacitance:
Rev.03 / Aug.01
4
HY62LF16404D Series
TIMING DIAGRAM
READ CYCLE 1 (Note 1,4)
tRC
ADDR
tAA
tOH
tACS
/CS
tCHZ(3)
tBA
/UB ,/ LB
Data
Out
tBHZ(3)
tOE
/OE
High-Z
tCLZ(3)
tOLZ(3)
tBLZ(3)
tOHZ(3)
Data Valid
READ CYCLE 2 (Note 1,2,4)
tRC
ADDR
tAA
tOH
tOH
Data
Out
Previous Data
Data Valid
READ CYCLE 3(Note 1,2,4)
/CS
/UB, /LB
tACS
tCLZ(3)
Data
Out
tCHZ(3)
Data Valid
Notes:
1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS and /UB and/or /LB .
2. /OE = VIL
3. Transition is measured + 200mV from steady state voltage.
This parameter is sampled and not 100% tested.
4. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
Rev.03 / Aug.01
5
HY62LF16404D Series
WRITE CYCLE 1 (1,4,8) (/WE Controlled)
tWC
ADDR
tWR(2)
tCW
/CS
tAW
tBW
/UB,/LB
tWP
/WE
tAS
Data In
tDW
High-Z
tDH
Data Valid
tWHZ(3,7)
tOW
(5)
(6)
Data
Out
WRITE CYCLE 2 (Note 1,4,8) (/CS Controlled)
tWC
ADDR
tAS
tWR(2)
tCW
/CS
tAW
tBW
/UB,/LB
tWP
/WE
tDW
Data In
Data
Out
Rev.03 / Aug.01
High-Z
tDH
Data Valid
High-Z
6
HY62LF16404D Series
Notes:
1. A write occurs during the overlap of a low /WE, a low /CS and a low /UB and/or /LB .
2. tWR is measured from the earlier of /CS, /LB, /UB, or /WE going high to the end of write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the
output must not be applied.
4. If the /CS, /LB and /UB low transition occur simultaneously with the /WE low transition or after the
/WE transition, outputs remain in a high impedance state.
5. Q(data out) is the same phase with the write data of this write cycle.
6. Q(data out) is the read data of the next address.
7. Transition is measured + 200mV from steady state.
This parameter is sampled and not 100% tested.
8. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
DATA RETENTION ELECTRIC CHARACTERISTIC
TA = -40°C to 85°C
Symbol
Parameter
VDR
Iccdr
tCDR
tR
Test Condition
/CS > Vcc - 0.2V or
/UB, /LB > Vcc - 0.2V,
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
Vcc=1.5V,
/CS > Vcc - 0.2V or
/UB, /LB > Vcc - 0.2V
VIN > Vcc - 0.2V or
VIN < Vss + 0.2V
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operating Recovery Time
Min
Typ1.
Max
Unit
1.5
-
2.7
V
SL
-
0.2
6
uA
LL
-
0.2
12
uA
0
-
-
ns
tRC
-
-
ns
See Data Retention Timing Diagram
Notes:
1. Typical values are under the condition of TA = 25°C.
2. Typical Value are sampled and not 100% tested
DATA RETENTION TIMING DIAGRAM
DATA RETENTION MODE
VCC
2.3V
tCDR
tR
VIH
VDR
/CS >VCC-0.2V
/CS
VSS
Rev.03 / Aug.01
7
HY62LF16404D Series
PACKAGE INFORMATION
48ball Fine Pitch Ball Grid Array Package (F)
BOTTOM VIEW
TOP VIEW
B
A
A1 CORNER
INDEX AREA
6
5
4
3
2
1
A
A
B
C
D
C
C1
E
F
G
C1/2
H
B1/2
B1
SIDE VIEW
5
E1
E2
C
E
SEATING PLANE
A
4
r
3 D(DIAMETER)
Symbol
A
B
B1
C
C1
D
E
E1
E2
r
Rev.03 / Aug.01
Min.
5.9
7.9
0.3
0.9
0.20
-
Typ.
0.75
3.75
6.0
5.25
8.0
0.35
1.0
0.75
0.25
-
Max.
6.1
8.1
0.4
1.10
0.30
0.08
Note
1. DIMENSIONING AND TOLERANCING PER ASME Y14. 5M-1994.
2. ALL DIMENSIONS ARE MILLIMETERS.
3. DIMENSION “D” IS MEASURED AT THE MAXIMUM SOLDER
BALL DIAMETER IN A PLANE PARALLEL TO DATUM C.
4. PRIMARY DATUM C(SEATING PLANE) IS DEFINED BY THE
CROWN OF THE SOLDER BALLS.
5. THIS IS A CONTROLLING DIMENSION.
8
HY62LF16404D Series
MARKING INFORMATION
Package
FBGA
Marking Example
H
Y
L
F
c
s
s
t
x
x
x
x
6
4
0
4
D
y
w
w
p
K
O
R
x
Index
• HYQF6404D
: Part Name
• c
: Power Consumption
-D
-S
• ss
: Low Low Power
: Super Low Power
: Speed
- 70
- 85
: 70ns
: 85ns
• t
: Temperature
-I
• y
: Year (ex : 0 = year 2000, 1= year 2001)
• ww
: Work Week ( ex : 12 = work week 12 )
• p
: Process Code
• xxxxx
: Lot No.
• KOR
: Origin Country
Note
- Capital Letter
- Small Letter
: Fixed Item
: Non-fixed Item
Rev.03 / Aug.01
: Industrial ( -40 ~ 85 °C )
9