APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
Applications
 Point-to-Point Digital Radios
 Point-to-Multipoint Digital Radios
 SATCOM Terminals
Product Description
X = 4.8mm Y = 3.6mm
The APN180 monolithic GaN HEMT amplifier
is a broadband, two-stage power device,
Product Features
designed for use in SATCOM Terminals and
 RF frequency: 27 to 31 GHz
point-to-point digital radios. To ensure rugged
 Linear Gain: 21 dB typ.
and reliable operation, HEMT devices are
 Psat: 39 dBm typ.
fully passivated. Both bond pad and backside
 Die Size: < 17.3 sq. mm.
metallization are Au-based that is compatible
 0.2um GaN HEMT Process
with epoxy and eutectic die attach methods.
 4 mil SiC substrate
 DC Power: 28 VDC @ 720 mA
Performance Characteristics (Ta = 25°C)
Specification
Frequency
Linear Gain
Input Return Loss
Output Return Loss
P1db
Psat
PAE @ Psat
Vd1, Vd2=Vd2a
Vg1
Vg2, Vg2a
Id1
Id2+Id2a
Min
27
18
4
6
38
Typ
22
8
15
37
39
28
28
-3.5
-3.5
144
576
Max
Unit
31
GHz
dB
dB
dB
dBm
dBm
%
V
V
V
mA
mA
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Vd1, Vd2+Vd2a
Id1
Id2+Id2a
Vg1, Vg2, Vg2a
Input drive level
Assy. Temperature
(TBD seconds)
Min
Max
Unit
20
28
144
576
0
TBD
300
V
mA
mA
V
dBm
deg. C
-5
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 1
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 144 mA, Id2 + Id2a = 576 mA *
Linear Gain vs. Frequency
Power, Gain, PAE% vs. Frequency **
45
26
24
40
Pout (dBm), Gain (dB), PAE%
Gain (dB)
22
20
18
16
14
12
10
8
6
4
2
0
35
30
25
20
15
10
5
Gain @ Pin=5 dBm
Psat (dBm)
PAE% @ PSat
PAE% Max
0
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
26
Frequency (GHz)
-2
-5
Output Return Loss (dB)
0
-6
-8
-10
28
29
30
31
32
Output Return Loss vs. Frequency
0
-4
27
Frequency (GHz)
Input Return Loss vs. Frequency
Input Return Loss (dB)
Linear Gain (dB)
-10
-15
-20
-25
-30
-35
-12
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Frequency (GHz)
Frequency (GHz)
* Pulsed-Power On-Wafer , ** CW Fixtured
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 2
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 20.0 V, Id1 = 144 mA, Id2 + Id2a = 576 mA *
Linear Gain vs. Frequency
Power, Gain, PAE% vs. Frequency
45
26
24
40
Pout (dBm), Gain (db), PAE%
Gain (dB)
22
20
18
16
14
12
10
8
6
4
2
0
35
30
25
20
15
10
5
Gain @ Pin=5 dBm
Psat (dBm)
PAE% @ PSat
0
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
26
Frequency (GHz)
27
28
29
30
31
32
33
Frequency (GHz)
Output Return Loss vs. Frequency
Input Return Loss vs. Frequency
0
0
-5
Output Return Loss (dB)
-2
Input Return Loss (dB)
Linear Gain (dB)
-4
-6
-8
-10
-10
-15
-20
-25
-30
-35
-12
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Frequency (GHz)
Frequency (GHz)
* Pulsed-Power On-Wafer
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 3
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 144 mA, Id2 + Id2a = 576 mA (Quiescent)
Power, Gain, PAE% vs. Frequency
CW Fixtured
45
45
40
40
Pout (dBm), Gain (dB), PAE%
Pout (dBm), Gain (dB), PAE%
Power, Gain, PAE% vs. Frequency
Pulsed-Power On-Wafer
35
30
25
20
15
10
5
Linear Gain (dB)
Gain @ Pin=5 dBm
Psat (dBm)
PAE% @ PSat
35
30
25
20
15
10
5
Linear Gain (dB)
Gain @ Pin=5 dBm
Psat (dBm)
PAE% @ PSat
PAE% Max
0
0
26
27
28
29
30
31
32
33
26
27
28
Frequency (GHz)
30
31
32
Output Power vs. Pin CW Fixtured
41
39
37
35
33
31
27 GHz
28 GHz
29 GHz
Pout (dBm)
Pout (dBm)
Output Power vs. Pin Pulsed-Power On-Wafer
41
39
37
35
33
31
29
27
25
23
21
19
17
15
29
Frequency (GHz)
29
26 GHz
27
27 GHz
25
28 GHz
23
30 GHz
21
31 GHz
19
32 GHz
17
29 GHz
30 GHz
31 GHz
32 GHz
15
0
2
4
6
8 10 12 14 16 18 20 22 24 26
Pin (dBm)
0
2
4
6
8 10 12 14 16 18 20 22 24 26
Pin (dBm)
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 4
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 144 mA, Id2 + Id2a = 576 mA (Quiescent)
27 GHz
28 GHz
29 GHz
30 GHz
31 GHz
32 GHz
2
4
6
26 GHz
27 GHz
28 GHz
29 GHz
30 GHz
31 GHz
32 GHz
0
8 10 12 14 16 18 20 22 24 26
2
4
6
8 10 12 14 16 18 20 22 24 26
Pin (dBm)
Drain Currents vs. Pin Pulsed-Power On-Wafer
Drain Currents vs. Pin CW Fixtured
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
Id1 28 GHz
Id1 30 GHz
Id1 32 GHz
Id2 28 GHz
Id2 30 GHz
Id2 32 GHz
Id1 29 GHz
Id1 31 GHz
Id2 27 GHz
Id2 29 GHz
Id2 31 GHz
Id1 27 GHz
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
Id (mA)
Pin (dBm)
Id (mA)
Id (mA)
0
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
Id1 26 GHz
Id1 28 GHz
Id1 30 GHz
Id1 32 GHz
Id2 27 GHz
Id2 29 GHz
Id2 31 GHz
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
Id1 27 GHz
Id1 29 GHz
Id1 31 GHz
Id2 26 GHz
Id2 28 GHz
Id2 30 GHz
Id2 32 GHz
0 2 4 6 8 10 12 14 16 18 20 22 24 26
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Pin (dBm)
Pin (dBm)
Id (mA)
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
PAE% vs. Pin CW Fixtured
PAE%
PAE%
PAE% vs. Pin Pulsed-Power On-Wafer
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 5 of 6
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
Fixtured Measured Performance Characteristics *
Vd = 28.0 V, Id1 = 144 mA, Id2 + Id2a = 576 mA (Quiescent)
45
40
35
44
39
33
43
38
31
42
37
29
41
36
27
35
25
34
23
40
39
38
33
37
32
OIP3 @ P1dB - 3dB (~34dBm/Tone)
OIP3 @ IMD3 = 25 dBc (~32dBm/Tone)
OIP3 @ IMD3 = 22 dBc (~33dBm/Tone)
36
35
29
29.5
30
30.5
Frequency (GHz)
P1dB
P3dB
Psat
PAE% @ P1dB
PAE% @ P3dB
PAE% @ Psat
31
30
31
29
29.5
30
30.5
Frequency (GHz)
PAE%
Power & PAE% vs. Pin CW Fixtured @ 25 degC
Pout (dBm)
OIP3 (dBm)
OIP3 vs. Pin CW Fixtured @ 23 degC
21
19
17
15
31
Spectral Regrowth @ 29.485 GHz for QPSK Symbol rate = 10 MSps & α = 0.3
Spectral Regrowth vs. Output Power
Spectral Regrowth vs. Temperature
DUT Apmlitude (dBm)
-35
-7
-20
-12
-25
-17
-40
-22
-45
-27
-50
-32
-55
-37
-60
-42
-65
-47
-70
-52
-75
-57
-80
-62
-85
-67
-90
29.46
29.47
29.48
29.49
Frequency (GHz)
29.5
-15
-72
29.51
-22
37.5dBm
38dBm
36dBm
-27
-32
-30
-37
-35
-42
-40
-47
-45
-52
-50
-57
-55
-62
-60
-67
-65
-72
-70
-77
-75
-82
-80
-87
-85
29.46
29.47
29.48
29.49
Frequency (GHz)
29.5
DUT Amplitude - 36dBm (dBm)
-30
-2
DUT Apmlitude - 37.5 & 38dBm (dBm)
-25
25°C
-40°C
65°C
Test Setup
Pout = 36
dBm (~3dB
backed off
from Psat)
Test Setup Amplitude (dBm)
-20
-92
29.51
* Measurement by Microsemi RFIS
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 6
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
Fixtured Measured Performance Characteristics (Typical Performance at 28°C) *
Vd = 28.0 V, Id1 = 144 mA, Id2 + Id2a = 576 mA (Quiescent)
35
1.5
30
1.0
25
0.5
20
0.0
15
-0.5
10
-1.0
5
Gain
Pout
AM-PM
AM-AM
0
6
8
2.0
35
1.5
30
1.0
25
0.5
20
0.0
15
-0.5
10
-1.0
5
-1.5
-2.0
4
40
Gain
Pout
AM-PM
AM-AM
0
10 12 14 16 18 20 22 24
AM-PM (Deg/dB), AM-AM (dB/dB)
2.0
Pout (dBm), Gain (dB)
40
Pout, Gain, AM-AM & AM-PM vs. Pin @ 29.5 GHz
AM-PM (Deg/dB), AM-AM (dB/dB)
Pout (dBm), Gain (dB)
Pout, Gain, AM-AM & AM-PM vs. Pin @ 29 GHz
-1.5
-2.0
4
6
8
10 12 14 16 18 20 22 24
40
2.0
35
1.5
30
1.0
25
0.5
20
0.0
15
-0.5
10
-1.0
5
Gain
Pout
AM-PM
AM-AM
0
4
6
8
10 12 14 16 18 20 22 24
Pin (dBm)
40
2.0
35
1.5
30
1.0
25
0.5
20
0.0
15
-0.5
10
-1.0
-1.5
5
-2.0
0
Gain
Pout
AM-PM
AM-AM
AM-PM (Deg/dB), AM-AM (dB/dB)
Pout, Gain, AM-AM & AM-PM vs. Pin @ 30.5 GHz
Pout (dBm), Gain (dB)
Pout, Gain, AM-AM & AM-PM vs. Pin @ 30 GHz
AM-PM (Deg/dB), AM-AM (dB/dB)
Pin (dBm)
Pout (dBm), Gain (dB)
Pin (dBm)
-1.5
-2.0
4
6
8
10 12 14 16 18 20 22 24
Pin (dBm)
* Measurement by Microsemi RFIS
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 7
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
Fixtured Measured Performance Characteristics (Typical Performance at 28°C) *
Vd = 28.0 V, Id1 = 144 mA, Id2 + Id2a = 576 mA (Quiescent)
40
2.0
35
1.5
30
1.0
25
0.5
20
0.0
15
-0.5
10
-1.0
5
Gain
Pout
AM-PM
AM-AM
0
AM-PM (Deg/dB), AM-AM (dB/dB)
Pout (dBm), Gain (dB)
Pout, Gain, AM-AM & AM-PM vs. Pin @ 31 GHz
-1.5
-2.0
4
6
8
10 12 14 16 18 20 22 24
Pin (dBm)
* Measurement by Microsemi RFIS
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 8
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
40
2.0
40
2.0
35
1.5
35
1.5
30
1.0
30
1.0
25
0.5
25
0.5
20
0.0
20
0.0
15
-0.5
15
-0.5
10
-1.0
10
-1.0
5
Gain
Pout
AM-PM
AM-AM
0
-1.5
5
-2.0
4
6
8
Gain
Pout
AM-PM
AM-AM
0
10 12 14 16 18 20 22 24
-1.5
-2.0
4
Pin (dBm)
AM-PM (Deg/dB), AM-AM (dB/dB)
Pout, Gain, AM-AM & AM-PM vs. Pin @ -40°C
Pout (dBm), Gain (dB)
Pout, Gain, AM-AM & AM-PM vs. Pin @ 28°C
AM-PM (Deg/dB), AM-AM (dB/dB)
Pout (dBm), Gain (dB)
Fixtured Measured Performance Characteristics (Typical Performance at 30 GHz) *
Vd = 28.0 V, Id1 = 144 mA, Id2 + Id2a = 576 mA (Quiescent)
6
8
10 12 14 16 18 20 22 24
Pin (dBm)
40
2.0
35
1.5
30
1.0
25
0.5
20
0.0
15
-0.5
10
-1.0
5
Gain
Pout
AM-PM
AM-AM
0
AM-PM (Deg/dB), AM-AM (dB/dB)
Pout (dBm), Gain (dB)
Pout, Gain, AM-AM & AM-PM vs. Pin @ 65°C
-1.5
-2.0
4
6
8
10 12 14 16 18 20 22 24
Pin (dBm)
* Measurement by Microsemi RFIS
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 9
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 30 GHz)*
Vd = 28.0 V, Id1 = 144 mA, Id2 + Id2a = 576 mA
12
30
1.1
44
11
29
1
43
10
28
0.9
42
9
27
0.8
41
8
26
0.7
40
7
25
0.6
39
6
38
5
24
0.5
37
4
23
0.4
36
3
22
0.3
PAE% @ Pin=28 dBm
45
35
POUT (dBm)
2
21
34
Gain (dB)
1
20
0
19
33
Id @ Pin=28 dBm (A)
PAE% & Id Total @ Pin = 28 dBm vs. Temperature
CW Fixtured *
Gain @ Pin=28 dBm (dB)
Pout @ Pin=28 dBm (dBm)
Pout & Gain @ Pin = 28 dBm vs. Temperature
CW Fixtured *
0.2
PAE (%)
ID (A)
0.1
0
25 30 35 40 45 50 55 60 65 70 75 80 85 90 95
25 30 35 40 45 50 55 60 65 70 75 80 85 90 95
DUT Temp (Co)
DUT Temp (Co)
* Measurement by Microsemi RFIS
Preliminary Thermal Properties with die mounted with 1mil 80/20 AuSn
Eutectic to 25mil CuW Shim.
Conditions
Vd = 28V, Id1 = 209 mA *
Id2 + Id2a = 783 mA *
Pin=23 dBm
Pout=39.1 dBm
Shim Boundary
Temperature
25 ºC
50 ºC
75 ºC
78 ºC **
Junction
Temperature
126.7 ºC
161.1 ºC
195.5 ºC
200.0 ºC
Thermal
Resistance
θjc
5.1 ºC/W
5.6 ºC/W
6.1 ºC/W
6.2 ºC/W
* Vd = 28.0 V, Idq1 = 144 mA, Id2q + Idq2a = 576 mA
** Max recommended. Junction Temperatures below 200.0 ºC should result in greater than 105
hours MTTF.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 10
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: May 2014
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 144 mA, Id2 + Id2a = 576 mA *
Freq GHz
S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
21.0
21.5
22.0
22.5
23.0
23.5
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
31.5
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
36.0
36.5
37.0
0.942
0.939
0.927
0.919
0.894
0.869
0.854
0.860
0.829
0.742
0.681
0.563
0.510
0.477
0.346
0.337
0.386
0.400
0.464
0.505
0.501
0.496
0.495
0.480
0.461
0.438
0.432
0.429
0.422
0.416
0.426
0.435
0.459
55.243
49.587
42.768
36.102
28.210
21.183
13.296
3.075
-12.305
-26.681
-42.501
-62.342
-78.689
-112.272
-147.579
-175.873
147.801
116.981
93.944
68.594
47.332
30.242
13.204
-2.780
-18.933
-34.960
-48.536
-65.327
-78.700
-93.589
-107.407
-119.646
-131.475
0.342
0.575
0.985
1.746
3.001
4.708
6.531
8.767
12.056
14.251
15.608
15.652
15.482
16.535
15.689
15.271
14.880
13.787
13.305
11.930
10.559
9.286
7.569
5.701
4.228
3.101
2.253
1.634
1.145
0.759
0.524
0.348
0.217
-170.362
169.383
146.926
119.542
84.655
44.910
3.508
-35.247
-77.999
-125.030
-169.464
147.565
111.591
73.417
33.406
-1.673
-39.720
-75.497
-113.217
-151.724
170.854
131.425
91.403
53.350
18.976
-13.803
-46.308
-78.439
-109.625
-138.612
-164.513
168.028
144.145
0.002
0.002
0.002
0.001
0.001
0.003
0.003
0.005
0.007
0.010
0.012
0.012
0.014
0.015
0.013
0.010
0.009
0.009
0.010
0.010
0.010
0.006
0.005
0.008
0.009
0.006
0.002
0.007
0.005
0.006
0.004
0.005
0.003
-166.716
102.340
25.226
-112.385
-100.494
-126.059
-143.553
-166.015
154.690
113.037
77.991
38.592
-4.259
-39.448
-71.339
-108.775
-131.745
-171.579
153.075
104.109
52.229
14.869
-2.848
-85.297
-54.974
-54.679
-82.565
-95.224
35.783
-164.566
33.354
-27.297
-56.007
0.065
0.069
0.072
0.065
0.071
0.095
0.128
0.138
0.148
0.217
0.310
0.367
0.345
0.279
0.228
0.172
0.123
0.141
0.144
0.158
0.144
0.112
0.114
0.122
0.121
0.105
0.088
0.057
0.039
0.062
0.076
0.085
0.092
152.524
128.941
97.324
76.487
69.138
55.719
13.894
-48.938
-149.420
114.136
50.799
-4.431
-52.289
-91.748
-118.585
-145.180
-160.979
-158.488
176.390
143.116
90.233
27.246
-52.929
-116.894
-154.918
176.278
148.306
140.691
166.011
159.310
170.766
163.096
144.691
* Pulsed-Power On-Wafer
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 11
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Die Size and Bond Pad Locations (Not to Scale)
Revision: May 2014
3589 µm
2989 µm
2589 µm
VD2
GND
VG2
GND
VD1
GND
GND
3600 µm
GND
VD2A
GND
GND
VG2A
RFOUT
GND
2390 µm
X = 4800 µm  25 µm
Y = 3600  25 µm
DC Bond Pad = 100 x 100  0.5 µm
RF Bond Pad = 100 x 100  0.5 µm
Chip Thickness = 101  5 µm
VD1A (NC)
GND
GND
RFIN
VG1A (NC)
GND
VG1
2189 µm
GND
1210 µm
2989 µm
3589 µm
4800 µm
Biasing/De-Biasing Details:
Bias for 1st stage is from top. The 2nd stages must bias up from both sides.
Listed below are some guidelines for GaN device testing and wire bonding:
a.
b.
c.
d.
Limit positive gate bias (G-S or G-D) to < 1V
Know your devices’ breakdown voltages
Use a power supply with both voltage and current limit.
With the power supply off and the voltage and current levels at minimum, attach the ground lead to
your test fixture.
i.
Apply negative gate voltage (-5 V) to ensure that all devices are off
ii.
Ramp up drain bias to ~10 V
iii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating
current is achieved
iv. Ramp up drain to operating bias
v. Gradually increase gate bias voltage while monitoring drain current until the operating current
is achieved
e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):
i.
Gradually decrease drain bias to 0 V.
ii.
Gradually decrease gate bias to 0 V.
iii. Turn off supply voltages
f. Repeat de-bias procedure for each amplifier stage
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 12
APN180
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
VG2
VD1
Suggested Bonding Arrangement
Revision: May 2014
VD2
[4]
[4]
= 0.1uF, 50V (Shunt) [4]
VG1
= 0.01uF, 50V (Shunt)
RF
Output
VD2
GND
GND
VG2
GND
VD1
VG1
RF
Input
GND
= 100 pF, 50V (Shunt)
GND
RFIN
GND
Substrate
Substrate
VD2A
GND
GND
VG2A
GND
GND
VD1A (NC)
GND
VG1A (NC)
GND
RFOUT
= 0.1uF, 15V (Shunt)
= 0.01uF, 15V (Shunt)
[4]
VG2A
VD2A
= 10 Ohms, 30V (Series)
= 100 pF, 15V (Shunt)
Recommended Assembly Notes
1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the
amplifier.
2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
3. Part must be biased from both sides as indicated.
4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device is to be
used, do NOT use the 0.1uF , 50V Capacitors.
Mounting Processes
Most NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or
AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a
good RF path to ground. Maximum recommended temp during die attach is 320 oC for 30 seconds.
Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up
tool.
CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS.
PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING,
ASSEMBLING OR BIASING THESE MMICS!
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 13
Approved for Public Release: Northrop Grumman Case 14-1028, 05/29/14