RH6200M
Low Noise, High Speed
Rail-to-Rail Op Amp
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
The RH6200 is an ultralow noise, rail-to-rail input and
output unity-gain stable op amp that features 0.95nV/√Hz
noise voltage. This amplifier combines very low noise
with a 165MHz gain bandwidth, 50V/μs slew rate and is
optimized for low voltage signal conditioning systems.
A shutdown pin reduces supply current during standby
conditions and thermal shutdown protects the part from
overload conditions. The RH6200 maintains its preirradiation performance for supplies from 4.5V to 12.6V
and is specified pre- and post-radiation at 5V and ±5V.
Total Supply Voltage (V+ to V–) .............................. 12.6V
Input Current (Note 2) ......................................... ±40mA
Output Short-Circuit Duration (Note 3) ............ Indefinite
Pin Current While Exceeding Supplies (Note 4) ...±30mA
Operating Junction Temperature Range
(Note 5) ............................................. –55°C to 125°C
Storage Temperature Range .................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec)................... 300°C
(Note 1)
BURN-IN CIRCUIT
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
PACKAGE/ORDER INFORMATION
10k
6.3V
3
200Ω
4
–
8
7
ORDER PART
NUMBER
RH6200MW
SHDN 1
NC 2
–IN 3
+
5
10k
TOP VIEW
8 V+
7 OUT
V– 5
6 NC
–6.3V
W PACKAGE
10-LEAD CERPAC
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
VOS
Input Offset
Voltage
Input Bias Current
IB
Input Offset
Current
9 NC
+IN 4
RH6200M F01
IOS
10 NC
–
+
CONDITIONS
VS = 5V, 0V; VCM = V – to V+
VS = ±5V; VCM = V – to V+
VS = 5V, 0V; VCM = V+
VS = 5V, 0V; VCM = V –
VS = ±5V; VCM = V+
VS = ±5V; VCM = V –
VS = 5V, 0V; VCM = V+
VS = 5V, 0V; VCM = V –
VS = ±5V; VCM = V+
VS = ±5V; VCM = V –
NOTES
(Preirradiation)
TA = 25°C
TYP
0.6
2.5
8
–50
–23
8
–50
–23
0.02
0.4
1
3
MIN
–55°C ≤ TA ≤ 125°C
SUBMAX GROUP MIN
TYP
MAX
2
1
4
6
1
9
18
1
20
1
–100
18
1
20
1
–200
4
1
5
5
1
25
7
1
12
12
1
50
SUBGROUP
2,3
2,3
2,3
2,3
2,3
2,3
2,3
2,3
2,3
2,3
UNITS
mV
mV
μA
μA
μA
μA
μA
μA
μA
μA
rh6200mfa
1
RH6200M
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
Input Noise
Voltage
en
Input Noise
Voltage Density
in
AVOL
Input Noise
Current Density
Large Signal
Open-Loop
Voltage Gain
CMRR
Common Mode
Rejection Ratio
PSRR
Power Supply
Rejection Ratio
VOL
Output Voltage
Swing Low
VOH
Output Voltage
Swing High
ISC
Short-Circuit
Current
Supply Current
CONDITIONS
0.1Hz to 10Hz
VS = 5V, 0V; f = 100kHz
VS = 5V, 0V; f = 10kHz
VS = ±5V; f = 100kHz
VS = ±5V; f = 10kHz
f = 10kHz Balanced Source
f = 10kHz Unbalanced Source
VS = 5V, 0V; RL = 1k; VOUT = 0.5V to 4.5V
VS = 5V, 0V; RL = 100Ω; VOUT = 1V to 4V
VS = 5V, 0V; RL = 100Ω; VOUT = 1.5V to 3.5V
VS = ±5V; RL = 1k; VOUT = ±4.5V
VS = ±5V; RL = 100Ω; VOUT = ±2V
VS = 5V, 0V; VCM = 0V to 5V
VS = 5V, 0V; VCM = 1.5V to 3.5V
VS = ±5V; VCM = ±5V
VS = ±5V; VCM = ±2V
VS = ±2.25V to ±5V
NOTES
6
6
tON
tOFF
GBW
SR
Turn-On Time
Turn-On Time
Gain Bandwidth
Product
Slew Rate
SHDN from Low to High
SHDN from High to Low
VS = 5V, 0V; at f = 1MHz
VS = ±5V; at f = 1MHz
VS = 5V, 0V; AV = –1; RL = 1k; VO = 4V
VS = ±5V; AV = –1, RL = 1k; VO = 4V
70
11
115
15
65
85
68
75
60
200
26
90
112
96
100
68
50
100
290
50
110
290
110
190
400
130
210
420
±60
9
50
150
12
55
150
55
95
220
70
110
225
±90
20
23
1.8
2.1
–280
16.5
20
1.3
1.6
–200
110
31
35
180
180
145
165
44
50
6
6
VS = 5V, 0V; IL = 0
VS = 5V, 0V; IL = 5mA
VS = 5V, 0V; IL = 20mA
VS = ±5V; IL = 0
VS = ±5V; IL = 5mA
VS = ±5V; IL = 20mA
VS = 5V, 0V; IL = 0
VS = 5V, 0V; IL = 5mA
VS = 5V, 0V; IL = 20mA
VS = ±5V; IL = 0
VS = ±5V; IL = 5mA
VS = ±5V; IL = 20mA
VS = 5V, 0V or VS = ±5V
TA = 25°C
SUBTYP
MAX GROUP
600
1.1
1.5
0.95
1.4
2.2
3.5
120
18
6
VS = 5V, 0V
VS = ±5V
IS(SHDN) Shutdown Supply VS = 5V, 0V
Current
VS = ±5V
Shutdown Pin
VS = 5V, 0V or VS = ±5V; VSHDN = 0.3V
ISHDN
Current
IS
MIN
(Preirradiation)
6
6
6
–55°C ≤ TA ≤ 125°C
MIN
TYP
MAX
SUBGROUP
2.4
2.3
4
4
4
4
1
1
1
1
1
4
4
4
4
4
4
4
4
4
4
4
4
1
1
1
1
1
1
4
4
35
5,6
5.5
40
7
58
76
63
72
58
5,6
5,6
5,6
2,3
2,3
2,3
2,3
2,3
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
V/mV
V/mV
V/mV
V/mV
dB
dB
dB
dB
dB
100
150
350
100
150
350
150
250
500
200
275
550
5,6
5,6
5,6
5,6
5,6
5,6
5,6
5,6
5,6
5,6
5,6
5,6
2,3
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mA
30
35
2.2
2.5
2,3
2,3
2,3
2,3
2,3
mA
mA
mA
mA
μA
±45
–300
UNITS
nVP-P
ns
ns
MHz
MHz
V/μs
V/μs
rh6200mfa
2
RH6200M
TABLE 1A: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
Input Offset Voltage VS = 5V, 0V; VCM = V – to V+
VOS
VS = ±5V; VCM = V – to V+
IB
IOS
AVOL
CMRR
PSRR
VOL
VOH
ISC
IS
VS = 5V, 0V, VCM = V+
VS = 5V, 0V, VCM = V–
VS = ±5V, VCM = V+
VS = ±5V, VCM = V–
Input Offset Current VS = 5V, 0V; VCM = V+
VS = 5V, 0V; VCM = V –
VS = ±5V; VCM = V+
VS = ±5V; VCM = V–
Large Signal Open
VS = 5V, 0V; RL = 1k; VOUT = 0.5V to 4.5V
Loop Voltage Gain
VS = 5V, 0V; RL = 100Ω; VOUT = 1V to 4V
VS = ±5V; RL = 1k; VOUT = ±4.5V
VS = ±5V; RL = 100Ω; VOUT = ±2V
Common Mode
VS = 5V, 0V; VCM = 0V to 5V
VS = 5V, 0V; VCM = 1.5V to 3.5V
Rejection Ratio
VS = ±5V; VCM = ±5V
VS = ±5V; VCM = ±2V
Power Supply
VS = ±2.25V to ±5V
Rejection Ratio
Output Voltage
VS = 5V, 0V; IL = 0
Swing Low
VS = 5V, 0V; IL = 5mA
VS = 5V, 0V; IL = 20mA
VS = ±5V; IL = 0
VS = ±5V; IL = 5mA
VS = ±5V; IL = 20mA
Output Voltage
VS = 5V, 0V; IL = 0
Swing High
VS = 5V, 0V; IL = 5mA
VS = 5V, 0V; IL = 20mA
VS = ±5V; IL = 0
VS = ±5V; IL = 5mA
VS = ±5V; IL = 20mA
Short-Circuit Current VS = 5V, 0V or VS = ±5V
Supply Current
VS = 5V, 0V
VS = ±5V
(Postirradiation) TA = 25°C
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
2.2
2.4
2.6
2.8
3
6.5
7
7.5
8
8.5
Input Bias Current
20
–55
22
–60
20
–55
22
–60
5
6
8
13
65
10
110
13.5
64
84
67
74
59
–70
6
7
9
14
–70
7
8
10
15
55
8
90
10.5
62
82
65
72
57
28
–75
26
24
–65
60
9
100
12
63
83
66
73
58
26
24
–65
28
–75
8
9
11
16
50
7
80
9
61
81
64
71
56
9
10
12
17
45
6
70
7.5
60
80
63
70
55
UNITS
mV
mV
μA
μA
μA
μA
μA
μA
μA
μA
V/mV
V/mV
V/mV
V/mV
dB
dB
dB
dB
dB
52
104
296
52
114
296
114
198
415
134
218
430
58
20.4
23.4
54
108
302
54
118
302
118
206
430
138
226
455
56
20.8
23.8
56
112
308
56
122
308
122
214
445
142
234
470
54
21.2
24.2
58
116
314
58
126
314
126
222
460
146
242
485
52
21.6
24.6
60
120
320
60
130
320
130
230
475
150
250
500
50
22
25
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mA
mA
mA
IS(SHDN) Shutdown Supply
Current
VS = 5V, 0V
VS = ±5V
1.84
2.14
1.88
2.18
1.92
2.22
1.96
2.26
2
2.3
mA
mA
ISHDN
VS = 5V, 0V or VS = ±5V; VSHDN = 0.3V
–284
–288
–292
–296
–300
μA
Shutdown Pin
Current
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Inputs are protected by back-to-back diodes. If the differential input
voltage exceeds 0.7V, the input current must be limited to less than 40mA.
Note 3: A heat sink may be required to keep the junction temperature
below the absolute maximum rating when the output is shorted indefinitely.
Note 4: There are reverse-biased ESD diodes from all inputs and outputs
to the respective supply pins. If these pins are forced beyond either
supply, unlimited current will flow through these diodes. If the current is
transient in nature and limited to less than 30mA, no damage to the
device will occur.
Note 5: The RH6200 is tested under pulse load conditions such that
TJ ≈ TA. The thermal resistance of the W 10-lead CERPAC package
(without heat sink) is estimated at 170°C/W. For a given application,
multiply the RMS power dissipation of the RH6200 times the package
thermal resistance (including any heat sinking if present) to calculate the
temperature difference between the ambient temperature and the junction
temperature. The RH6200 has a thermal shutdown feature that protects
the part from excessive junction temperature. The amplifier will shut
down to an inactive, low current condition when the junction temperature
exceeds approximately 160°C. The amplifier will remain shut down
until the die cools off to below approximately 150°C, at which point the
amplifier will return to normal operation.
Note 6: This parameter is not production tested. Typical bench evaluation
performance listed for information only.
rh6200mfa
3
RH6200M
TOTAL DOSE BIAS CIRCUIT
TABLE 2: ELECTRICAL TEST
REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
CF*
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*, 2, 3, 4, 5, 6
Group A Test Requirements (Method 5005)
1*, 2, 3, 4, 5, 6
Group B and D for Class S,
End Point Electrical Parameters (Method 5005)
10k
1, 2, 3
5V
*PDA applies to subgroup 1. See PDA Test Notes.
–
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1, tests
after cooldown as the final electrical test in accordance with method 5004
of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in
divided by the total number of devices submitted for burn-in in that lot shall
be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
10k
+
–5V
RH6200 F02
*CF IS COMPONENT OR PARASITIC
CAPACITANCE ENSURING STABILITY
TYPICAL PERFORMANCE CHARACTERISTICS
80
VS = 5V, 0V
70
70
60
60
NUMBER OF UNITS
NUMBER OF UNITS
80
VOS Distribution, VCM = V –
50
40
30
Supply Current vs Supply Voltage
30
VS = 5V, 0V
TA = 125°C
25
SUPPLY CURRENT (mA)
VOS Distribution, VCM = V +
50
40
30
20
20
10
10
0
–1600–1200 –800 –400 0 400 800 1200 1600
INPUT OFFSET VOLTAGE (μV)
0
–1600–1200 –800 –400 0 400 800 1200 1600
INPUT OFFSET VOLTAGE (μV)
RH6200 G01
20
TA = 25°C
15
TA = –55°C
10
5
RH6200 G02
0
0
2
8
12
6
10
4
TOTAL SUPPLY VOLTAGE (V)
14
RH6200 G03
rh6200mfa
4
RH6200M
TYPICAL PERFORMANCE CHARACTERISTICS
Input Bias Current
vs Common Mode Voltage
Offset Voltage vs Input Common
Mode Voltage
20
VS = 5V, 0V
TYPICAL PART
2.5
10
VS = 5V, 0V
OUTPUT SATURATION VOLTAGE (V)
3.0
Output Saturation Voltage
vs Load Current (Output Low)
INPUT BIAS CURRENT (μA)
10
OFFSET VOLTAGE (mV)
2.0
1.5
TA = 125°C
1.0
0.5
TA = 25°C
0
TA = –55°C
–0.5
0
–10
TA = –55°C
–20
TA = 25°C
–30
TA = 125°C
–1.0
–40
–1.5
0
–1
5
4
1
3
2
INPUT COMMON MODE VOLTAGE (V)
0
3
5
2
4
1
COMMON MODE VOLTAGE (V)
Output Saturation Voltage
vs Load Current (Output High)
TA = 125°C
TA = 25°C
TA = –55°C
TA = –55°C
0.01
TA = 25°C
0.001
6
0.1
22
20
30
25
NPN ACTIVE
VCM = 4.5V
20
15
BOTH ACTIVE
VCM = 2.5V
10
100
TA = 125°C
16
14
TA = 25°C
12
10
8
6
TA = –55°C
4
2
10
100
1k
100k
10k
0
0
1
FREQUENCY (Hz)
RH6200 G07
2
3
4
SHDN PIN VOLTAGE (V)
RH6200 G08
SHDN Pin Current
vs SHDN Pin Voltage
70
VS = ±5V
0
60
VS = 5V, 0V
GAIN BANDWIDTH (MHz)
TA = –55°C
–100
TA = 125°C
–150
–200
–250
50
PHASE MARGIN
VS = ±5V
180
160
VS = 5V, 0V
140
GAIN BANDWIDTH
120
–300
1
2
3
4
5
SHDN PIN VOLTAGE (V)
RH6200 G10
40
PHASE MARGIN (DEG)
TA = 25°C
0
5
RH6200 G09
Gain Bandwidth and Phase
Margin vs Temperature
VS = 5V, 0V
–50
100
RH6200 G06
VS = 5V, 0V
18
PNP ACTIVE
VCM = 0.5V
5
1
10
LOAD CURRENT (mA)
1
10
LOAD CURRENT (mA)
Supply Current
vs SHDN Pin Voltage
VS = 5V, 0V
TA = 25°C
35
0
0.01
50
TA = 125°C
SUPPLY CURRENT (mA)
NOISE VOLTAGE (nV/√Hz)
1
SHDN PIN CURRENT (μA)
OUTPUT SATURATION VOLTAGE (V)
45
40
0.1
0.1
Input Noise Voltage vs Frequency
VS = 5V, 0V
0.1
1
RH6200 G05
RH6200 G04
10
VS = 5V, 0V
100
–50
–25
0
25
50
75
TEMPERATURE (°C)
100
125
RH6200 G11
rh6200mfa
5
RH6200M
TYPICAL PERFORMANCE CHARACTERISTICS
Open-Loop Gain vs Frequency
120
PHASE
60
VCM = 0.5V
VCM = 4.5V
40
30
20
20
0
VCM = 4.5V
10
VCM = 0.5V
–20
1M
–80
60
VS = ±2.5V RISING
40
VS = ±5V
AV = –1
TA = 25°C
0
–55 –35 –15
1G
RH6200 G12
VOUT
500Ω
+
100
1mV
1mV
50
10mV
10mV
0
–4
5 25 45 65 85 105 125
TEMPERATURE (°C)
–3
–2
1
2
–1
0
OUTPUT STEP (V)
3
4
RH6200 G14
5V Large-Signal Response
Distortion vs Frequency, AV = 1
AV = 1
VO = 2VP-P
–60 VS = ±5V
1mV
5V
VOUT
DISTORTION (dBc)
VIN
–
100
1mV
–70
10mV
10mV
1V/DIV
HD2, RL = 1k
–80
HD2, RL = 100Ω
0V
–90
50
HD3, RL = 1k
–100
HD3, RL = 100Ω
0
–3
VIN
RH6200 G13
500Ω
500Ω
+
–4
150
–
–50
150
SETTLING TIME (ns)
VS = ±5V FALLING
80
VS = ±5V
AV = 1
TA = 25°C
20
Settling Time vs Output Step
(Inverting)
200
VS = ±5V RISING
VS = ±2.5V FALLING
–60
10M
100M
FREQUENCY (Hz)
200
AV = –1
RF = RG = 1k
RL = 1k
100
–40
VS = 5V, 0V
CL = 5pF
RL = 1k
–20
100k
SLEW RATE (V/μs)
GAIN
PHASE (DEG)
GAIN (dB)
60
40
–10
120
80
50
0
140
100
SETTLING TIME (ns)
80
70
Settling Time vs Output Step
(Noninverting)
Slew Rate vs Temperature
–2
1
2
–1
0
OUTPUT STEP (V)
3
4
RH6200 G15
–110
100k
1M
FREQUENCY (Hz)
10M
VS = 5V, 0V
AV = 1
RL = 1k
200ns/DIV
RH6200 G17
RH6200 G16
rh6200mfa
6
RH6200M
TYPICAL PERFORMANCE CHARACTERISTICS
Offset Voltage
±5V Large-Signal Response
Offset Voltage
0.0
0.0
2V/DIV
0V
VS = ±5V
AV = 1
RL = 1k
200ns/DIV
–1.0
–1.5
–2.0
–2.5
RH6200 G18
–1.5
–2.0
–2.5
–3.0
–4.0
1
10
100
TOTAL DOSE KRAD (Si)
RH6200 G19
1.5
1.0
0.5
VS = 5V, 0V
VCM = 5V
VARIOUS UNITS
VS = 5V, 0V
20
0.5
0.0
–0.5
VCM = 5V
10
0
–10
VCM = 0V
–20
–30
–1.0
0.0
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH6200 G21
1000
RH6200 G20
Input Bias Current
30
INPUT BIAS CURRENT (μA)
VS = 5V, 0V
VCM = 0V
VARIOUS UNITS
10
100
TOTAL DOSE KRAD (Si)
1
1000
Offset Voltage
1.0
OFFSET VOLTAGE (mV)
OFFSET VOLTAGE (mV)
–1.0
–3.5
–3.0
Offset Voltage
2.0
VS = ±5V
VCM = 5V
VARIOUS UNITS
–0.5
OFFSET VOLTAGE (mV)
OFFSET VOLTAGE (mV)
VS = ±5V
VCM = –5V
–0.5 VARIOUS UNITS
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH6200 G22
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH6200 G23
rh6200mfa
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RH6200M
TYPICAL PERFORMANCE CHARACTERISTICS
Open-Loop Voltage Gain,
RL = 1k
Input Bias Current
30
200
VS = ±5V
10
0
–10
VCM = –5V
–20
25
VS = ±5V
150
OPEN LOOP GAIN (V/mV)
VCM = 5V
OPEN LOOP GAIN (V/mV)
125
VS = 5V, 0V
100
75
50
0
–30
1
10
100
TOTAL DOSE KRAD (Si)
10
100
TOTAL DOSE KRAD (Si)
RH6200 G24
Common Mode Rejection Ratio
110
CMRR (dB)
CMRR (dB)
90
VCM = –2V to 2V
100
90
80
VCM = 0V to 5V
70
70
1000
RH6200 G27
10
100
TOTAL DOSE KRAD (Si)
1000
RH6200 G26
Power Supply Rejection Ratio
80
VCM = –5V to 5V
10
100
TOTAL DOSE KRAD (Si)
1
RH6200 G25
VCM = 1.5V to 3.5V
1
10
1000
VS = ±5V
110
100
VS = 5V, 0V
15
Common Mode Rejection Ratio
120
VS = 5V, 0V
80
20
0
1
1000
VS = ±5V
5
25
POWER SUPPLY REJECTION RATIO (dB)
INPUT BIAS CURRENT (μA)
30
175
20
120
Open-Loop Voltage Gain,
RL = 100Ω
VS = ±2.25V TO ±5V
75
70
65
60
55
50
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH6200 G28
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH6200 G29
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8
RH6200M
TYPICAL PERFORMANCE CHARACTERISTICS
Output Swing Low
Output Swing Low
250
200
LOAD = 20mA
150
100
LOAD = 5mA
50
VS = ±5V
LOAD = 20mA
150
100
LOAD = 5mA
50
RH6200 G30
RH6200 G31
LOAD = 5mA
NO LOAD
0
Short-Circuit Current
1000
RH6200 G33
SOURCING
90
SINKING
80
70
60
50
1000
RH6200 G32
100
SHORT CIRCUIT CURRENT (mA)
SHORT CIRCUIT CURRENT (mA)
150
10
100
TOTAL DOSE KRAD (Si)
10
100
TOTAL DOSE KRAD (Si)
1
1000
SOURCING
200
1
50
Short-Circuit Current
LOAD = 20mA
50
10
100
TOTAL DOSE KRAD (Si)
100
VS = ±5V
100
LOAD = 5mA
0
1
1000
Output Swing High
250
100
NO LOAD
0
10
100
TOTAL DOSE KRAD (Si)
150
NO LOAD
0
1
VS = 5V, 0V
LOAD = 20mA
200
NO LOAD
OUTPUT SWING HIGH (mV)
Output Swing High
200
OUTPUT SWING HIGH (mV)
VS = 5V, 0V
OUTPUT SWING LOW (mV)
OUTPUT SWING LOW (mV)
250
VS = 5V, 0V
1
10
100
TOTAL DOSE KRAD (Si)
90
70
60
50
1000
SINKING
80
VS = ±5V
1
RH6200 G34
10
100
TOTAL DOSE KRAD (Si)
1000
RH6200 G35
rh6200mfa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
9
RH6200M
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current
Shutdown Supply Current
Shutdown Pin Current
VS = ±5V
20
VS = 5V, 0V
15
10
0
SHUTDOWN PIN CURRENT (μA)
2.0
SHUTDOWN SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
25
VS = ±5V
1.5
VS = 5V, 0V
1.0
0.5
1000
–100
–150
VS = ±5V
–200
VS = 5V, 0V
–250
–300
0.0
10
100
TOTAL DOSE KRAD (Si)
1
–50
1
RH6200 G36
10
100
TOTAL DOSE KRAD (Si)
1000
RH6200 G37
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH6200 G38
REVISION HISTORY
REV
DATE
DESCRIPTION
PAGE NUMBER
A
11/11
Revised Conditions for AVOL in Table 1: Electrical Characteristics
2
I.D. No. 66-10-1028 0807
rh6200mfa
10
Linear Technology Corporation
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