A SOLECON L AB
SS
EM
n
n pp
nnn
p p n
n
SOLECON
LABORATORIES
INCORPORATED
An Introduction to
Spreading Resistance Analysis
and its Application in the
Semiconductor Industry
Sheila Loftis
Dan Dickey
Solecon Labs
770 Trademark Dr
Reno, NV 89521
(775) 853-5900
www.solecon.com
Cover
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
nnn
A SOLECON L AB
SS
EM
SPREADING RESISTANCE ANALYSIS REQUEST FORM
Priority:
High o
Normal o
Company
Engineer
Mailing Address
Tel #
AR
IN
Date
(Mail Stop too, please)
(surcharge)
Purchase Order #
Message #
(please!)
Fax #
Number of Samples _______________
Sample #
Total Number of Profiles _______________
Approximate structure expected from surface down:
Type Depth
Type Depth
Type Depth
Type Depth
email
Maximum
Depth of
Interest
Circle
Substrate
Type
P
N
<111> <100>
P
N
<111> <100>
P
N
<111> <100>
P
N
<111> <100>
P
N
<111> <100>
P
N
<111> <100>
P
N
<111> <100>
P
N
<111> <100>
Hard copy carrier concentration plots are supplied automatically. Also available are…
Hard Copy: o Resistivity Plot, o Resistance Plot, o Data Table
Soft Copy: o Text File(s), o Image File(s) -via:- o 3½" DOS, o E-mail
Reference Job # (if any):
Special Instructions: (Any specific region of the profile of greater importance than the rest?)
If device wafer, please indicate locations required by a sketch below or by attaching a photo or drawing .
Sketch:
FillingSRAR1
Circle
Crystal
Orientation
SOLECON LABS, Reno, Nevada (775) 853-5900
A SOLECON L AB
SS
EM
1. Solecon Labs privacy policy.
2. Provide us with as much information as possible.
3. An appropriate bevel angle is needed.
4. Solecon strives for over 20 data points per layer.
5. A shallow emitter at .2µm on base at .4µm on epi/buried layer at
5.5µm on p-type substrate. What are you really interested in?
FillingSRAR2
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Filling out our request form:
A SOLECON L AB
SS
EM
EPI
BU
LA RIED
YE
R
B
A
S
E
E
M
IT
TE
R
ISOLATION
Bipolar1
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Shallow Profile of the Bipolar Structure
A SOLECON L AB
SS
EM
N- EPI
P substrate
TER
EASMEIT
B
N+ BURIED LAYER
P+
IS
O
LA
TI
O
N
ISOLATION
Bipolar2
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Deep Profile of the Bipolar Structure
A SOLECON L AB
SS
EM
AR
IN
Bipolar Transistor
10 20
nnn
nnnnnn
n
n
10 20n
n
n
S
S
10 19 S
n
n
nn n
nnnn n nnn nn
n nn
nn
nnn
n
nnn
nn
n
nn
nn
nn
n
n
nn
n
nn
n
nn
n
n
n
nn
n
n
n
n
n
n
n
n
n
n
n
10 19
10 18
n
pp
p
pp pp
p
p
p
p
p
p
p
10 17
p
n
nn
n
n
n
nn
nnnnnnnnn nnnnnnnnnn nnnnnnnnnnnnnnn
n
n
n
nnnn
n
n
n
nn
n
n
nn
n
n
n
n
10 16
10 15
10 140
Bipolar3
.2
.4
.6
.8
DEPTH - microns
1
1.2
Carrier Concentration in cm -3
Carrier Concentration in cm -3
n
10 18
n
10 17
p
p
p
n
n
n
n
n n
nnnn nn
n
n
10 16
n
n
n
10 15
PPPPPPP
n PPPP
P
P
n
P
10 14
0
1
2
3
4
DEPTH - microns
SOLECON LABS, Reno, Nevada (775) 853-5900
5
6
A SOLECON L AB
SS
EM
1. We measure from full wafers to a millimeter square.
2. Pattern wafers and backups.
Beveling:
1. Your samples are mounted on angled beveling blocks.
2. Samples should be beveled immediately before probing, to avoid
interference from native oxide.
Size of pattern:
1. Our minimum requirements are 20µm wide x 100µm long.
2. The smaller the pattern size the greater the compromise.
3. For this reason we suggest dedicated spreading resistance test
patterns which are 50 x 500µm.
Sizes
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
How much of the sample do we need?
A SOLECON L AB
SS
EM
DedTPs
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Dedicated SRA Test Patterns
A SOLECON L AB
SS
EM
M
E
T
A
J L
U L
NU
CR
TG
IO IC
NA
L
Osmium or Tungsten Carbide Probes
ype I
T
g
n
i
p
Do
ype II
T
g
n
i
p
Do
Sample
Bevel
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Schematic diagram of a spreading resistance
measurement on a beveled sample
A SOLECON L AB
SS
EM
With a Few Modifications, the Spreading Resistance
Set-Up Can Determine “N” or “P”.
Polarity and magnitude of the open circuit
(Seebeck) voltage determined
M
E
T
A
J L
U L
NU
CR
TG
IO IC
NA
L
One probe is heated.
ype I
T
g
n
i
p
Do
ype II
T
g
n
i
p
Do
Sample
HotProbe
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Carrier Type Determination
A SOLECON L AB
SS
EM
Optical
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Optical Profilometer view of a spreading resistance
measurement on a beveled sample
A SOLECON L AB
SS
EM
BirdsEye
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Birds Eye View of SRA Sample and Probes
A SOLECON L AB
SS
EM
1. 2 probe tips made of tungsten carbide are used.
2. The probe tips are shaped so that they can be positioned within
20um of each other.
3. Each probe tip is mounted on the end of a separate arm.
4. Each arm pivots on a kinematic bearing system that eliminates
lateral motion or "scrubbing" as it contacts the sample.
5. Probe tips are lowered gently onto the sample.
6. Because of the small contact area, pressure is in excess of a million
pounds per square inch.
7. 5 millivolts are applied across the probes and the resistance is
measured.
Probing
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Probing
A SOLECON L AB
SS
EM
L
rL
R = pr 2
r
where r is the bulk resistivity in ohm-cm
.
SPREADING RESISTANCE
r
R =
2a
Linear
a
L
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
LINEAR CURRENT FLOW
A SOLECON L AB
SS
EM
s
a
a
t
r
R =
pt
ln s
a
D. H. Dickey, NBS SP 400-48
ThinLayer
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Two Probes on a Thin Layer (t<a):
A SOLECON L AB
SS
EM
AR
IN
What is the significance of resistivity? In a semiconductor
it is related to the concentration of electrons and holes:
1
s = = nqm e + pqm p
r
And from that, the dopant concentration can be approximated.
1
N @n@
rqme
Conductivity
SOLECON LABS, Reno, Nevada (775) 853-5900
A SOLECON L AB
SS
EM
AR
IN
107
n<111>
n<100>
106
p<111>
p<100>
Calibration Chart
(NIST Traceable Si Bulk Standards)
105
Measured Resistance (ohms)
Spreading Resistance
vs. Resistivity
104
103
102
10
1
.0001
.001
.01
0.1
1
Resistivity (ohm-cm)
CalibCurves1
SOLECON LABS, Reno, Nevada (775) 853-5900
10
100
1000
A SOLECON L AB
SS
EM
AR
IN
Calibration Data for Three Probe Loads
107
107
n<111>
n<100>
n<111>
n<100>
106
p<111>
p<100>
106
n<111>
n<100>
p<111>
p<100>
p<111>
p<100>
105
Measured Resistance (ohms)
Measured Resistance (ohms)
105
104
103
102
10
104
103
102
2.5g
10
2.5g
10g
10g
20g
1
.0001
1
.001
.01
0.1
1
Resistivity (ohm-cm)
CalibCurves2
10
100
1000
.0001
20g
.001
.01
0.1
1
Resistivity (ohm-cm)
SOLECON LABS, Reno, Nevada (775) 853-5900
10
100
1000
A SOLECON L AB
SS
EM
(Measured resistance is dominated by the lateral current flow)
600W
s
a
a
500
t
R =
Measured Resistance
400
r
pt
ln s
a
300
Sample #1
284ohms/sq
Sample #2
126ohms/sq
200
Sample #3
56.4ohms/sq
100
0
1
10
100
1000
Probe Spacing - microns
After: Dickey, NBS SP 400-48 p16
Spacing
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Probe Spacing Experiment on Relatively Thin Layers
A SOLECON L AB
SS
EM
es. Epi
ubstrate
stivity S e)
i
s
e
R
Low
typ
doping
(same
Sample
Measured Resistance in Ohms
ce
rfa
str
ate
Int
e
i—
Su
b
Ep
High R
AR
IN
High Resisitivity Epi
10
8
10
7
10
6
10
5
10
4
10
3
10
2
10
1
.
Bevel Edge
Probing
HighRho1
“Raw Data”
SOLECON LABS, Reno, Nevada (775) 853-5900
A SOLECON L AB
SS
EM
10
10
8
10 4
7
10
6
Data
Reduction
5
10
4
10
3
10
2
Resistivity (ohm-cm)
Measured Resistance in Ohms
10
10
AR
IN
High Resisitivity Epi (continued)
10
nnnnnnnnnnnnnnnnnnnnnnn
nnnn
nnnnn
nnn
nn
nn
nnn
nn
n
n
nn
3
n
n
n
n
n
n
n
n
2
n
n
n
10 1
10 0
n
10 -1
.
n
NNNNNNNNNNNNNNNNNNNNNNNNN
10
1
10 -2
0
Bevel Edge
“Raw Data”
HighRho2
10
20
30
40
DEPTH - microns
Resistivity Plot
SOLECON LABS, Reno, Nevada (775) 853-5900
50
60
A SOLECON L AB
SS
EM
10 4
10
nnnnnnnnnnnnnnnnnnnnnnn
nnnn
nnnnn
nnn
nn
nn
nnn
nn
n
n
nn
3
n
n
n
n
n
n
n
n
2
n
NNNNNNNNNNNNNNNNNNNNNNNNN
10 17
-3
-3
Carrier Concentration
Calculated Using
Published Carrier
Mobility Values
n
n
10 1
18
n
Carrier Concentration (cm )
Resistivity (ohm-cm)
10
10
AR
IN
High Resisitivity Epi (continued)
10 0
n
10 -1
10 16
n
10 15
n
10 14
n
n
n
n
n
n
10 13
n
n
nn
nn
n
nn
nnn
nnn
n
n
nnnnn
10 12
nnnnn
nnnnnnnnnnnnnnnnnnnnnnnnn
n
NNNNNNNNNNNNNNNNNNNNNNNNN
10 -2
0
10
20
30
DEPTH - microns
Resistivity
HighRho3
40
10 11
0
10
20
30
DEPTH - microns
40
Carrier Concentration
SOLECON LABS, Reno, Nevada (775) 853-5900
A SOLECON L AB
SS
EM
Uncorrected layers
(Unsmoothed data)
Both layers corrected
(Unsmoothed data)
Top layer corrected and smoothed
(Uncorrected/unsmoothed substrate)
Our correction algorithms account for the sampling volume on non-uniformly doped layers. In regions with slight to no
resistivity gradient, the algorithms tend to magnify the mechanical noise. But without correction the graded layer’s values
can be very wrong! We have various levels of smoothing which we can use to reduce the scatter in your profiles.
Correction
AR
IN
Sampling Volume Correction
SOLECON LABS, Reno, Nevada (775) 853-5900
A SOLECON L AB
SS
EM
AR
IN
SIMPLE CARRIER CONCENTRATION
PROFILES CAN BE CONVERTED
TO DOPANT PROFILES
USING OUR POISSON SOLVER
Raw
Data
Poisson1
Data reduction
and
Calibration standards
Resistivity
Published Carrier
Mobility Values
Carrier
Concentration
Poisson
Solver
SOLECON LABS, Reno, Nevada (775) 853-5900
Dopant
Concentration
A SOLECON L AB
SS
Simple Carrier Concentration Profiles Can Easily Be Converted to Dopant Profiles using Our Poisson Solver
EM
AR
IN
1017
Concentration Profile
1016
Carrier
Concentration
-3
(cm )
1015
1014
10130
1
2
3
4
5
6
Poisson Solver
1017
Dopant Profile
1016
Dopant
Concentration
-3
(cm )
1015
1014
1013
0
Poisson2
1
2
3
4
DEPTH — microns
5
6
SOLECON LABS, Reno, Nevada (775) 853-5900
A SOLECON L AB
SS
EM
.
Concentration (cm-3)
70 keV 1e15, 4e15,1e16 10B into Silicon (circa 1983)
SIMS
SRA
(not ours)
DEPTH — microns
From : James Ehrstein et al, ASTM Special Technical Publication 850, D. C. Gupta, editor, p. 415.
Sims
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
SIMS Typically Reports Greater Depth in the Tail Region of B Diffusions.
In the Following Example, Boron was Implanted into Single-crystal Si.
A SOLECON L AB
SS
EM
AR
IN
11 MeV Arsenic Implant
10
10
10
19
“The implantations were carried out
using the facilities of the Lawrence
Berkeley Laboratory. 11 MeV beams
were obtained from a dynamatron
with a 2.2 megavolt terminal. The ion
source is a conducting crystal of
gallium arsenide from which arsenic
ions in the 5+ charge state were
sputtered and extracted into the
accelerator column.”
18
n
n
10
From Megavolt Arsenic Implantation
into Silicon, a paper presented at the
1982 International Conference on
Metallurgical Coatings and Process
Technology by P.F. Byrne, N. W.
Cheung, and D.K. Sadana, University
of California, Berkeley.
17
16
Many thanks to Peter Byrne for
permission to reproduce and
disseminate this very impressive
profile.
n
n
10
15
n
P
P
10
14
0
1
2
3
4
5
6
DEPTH — microns
As11MeV
SOLECON LABS, Reno, Nevada (775) 853-5900
A SOLECON L AB
SS
EM
20
AR
IN
10
P-TYPE CONTAMINATION
— PROBABLY FROM BORON
CONTAMINATED ANTIMONY
10
19
nnnnn
n
n
n
n
n
10
18
n
n
n
n
n
n
N+
BURIED n
LAYER
(Antimony) n
n
10
17
n
Carrier
n
Concentration
-3
n
n nn n
(cm )
n
n
n
10
10
10
P-CONTAMINATION
ppp
pp pp
p
p
pp
p
p
pp
p
p
p
p
pp
pp
p
pp
pp
pp
pp
PPPPPPPPPPPPPPPPP
16
EPI
15
14
0
4
8
12
16
20
DEPTH — microns
BContamination
SOLECON LABS, Reno, Nevada (775) 853-5900
24
A SOLECON L AB
SS
EM
AR
IN
Arsenic Autodoping During Epitaxial Deposition
SRP Through a Buried Layer Pattern:
10
SRP through the Field:
20
10
20
n
n
10
19
n
10
19
n
n
10
18
10
n
18
n
10
Carrier
Concentration
-3
(cm )
10
17
10
n
Carrier
Concentration
-3
(cm )
n
n
n
16 nnn
17
10
n
n
n
16
nn
n
nn
n
n
n
10
15
10
AutoDoping
14
0
4
8
12
16
DEPTH — microns
20
24
P
P
P
PP
10
15
10
14
0
4
8
12
16
DEPTH — microns
SOLECON LABS, Reno, Nevada (775) 853-5900
20
24
A SOLECON L AB
SS
EM
AR
IN
Ion Implant Channeling
10 degrees tilt
.
n
n
n
10 20
0 degrees tilt
n
.
10 20
n
n
n
n
n
n
n
10 19
10 19
n
n
n
10 18
10 18
n
n
n
10 17
10 17
n
n
n
n
n
10 16
n
10 16
n
n
n
n
n
10 15
n
10 15
P PPPP PPPP PPPPP PPP PPPPP PPP PPP
10 14
0
.
.05
.1
.15
DEPTH-microns
Channeling
.2
.25
.3
10 14
0
.
.05
.1
PPP PP
.15 P .2
DEPTH-microns
SOLECON LABS, Reno, Nevada (775) 853-5900
P PP PP
PPPP P
.25
.3
A SOLECON L AB
SS
EM
AR
IN
P+ Isolation Diffusion into N-Epi
Wafer A
10
10
10
10
Carrier
Concentration
-3
(cm )
10
10
19pppppppppppp
10
ADEQUATE
ISOLATION
18
16
10
15
p
4
8
12
16
DEPTH — microns
19
10
p
14
0
20
ppppppppppp
ppppp
ppp
ppp
p
pp
pp
p
18
p
pp
10
pp
p
p
pp
pp
p
p
17
p
10
p
p
Carrier
p
Concentration
p
p
-3
p
(cm )
p
p
16
10
p
p
p
p
p
15
p
17
10
P+Iso
Wafer B
20
20
24
10
PRECARIOUS!
P PPPPPPPPPPPPPPPPPPPPPPPPP
PPPPP
P
P
p PP
P
P
P
P
P
P
14
0
A VERY
MARGINAL
ISOLATION
4
8
12
16
DEPTH — microns
SOLECON LABS, Reno, Nevada (775) 853-5900
20
24
A SOLECON L AB
SS
EM
1017
p
p
pp
pp p
pp
1016
p
ppp
p
p
3
Carrier Concentration (cm- )
p
1015
1014
1013
p
pp
ppp
p
p
p
p
pp
p
p
p
ppp ppp
pp p
pp pp p
ppppp
p
p
p
p
pp
p
p
p
pp p
pp p
p
p
p
pp
p
1012
10110
OxyDoners
.5
bulk doping
of wafer
~ 2e14
p-type
P
PPPP P
PP P P
P
PPP P
P PP
P P
P P
P
p pPP P
p pp p
p
pp ppp pp PP
pp
pppppp p p p
p ppp p
1.0
1.5
2.0
E
P
T
H
m
i
c
r
D
ons
2.5
3.0
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Thermal Donors — A Severe Case
A SOLECON L AB
SS
EM
AR
IN
Unannealed Implant
N-type implant into 1e16 cm-3 N-type background. Since the implant wasn't
activated, SRA senses the mobility change in the damaged area.
10
20
10
10 19
7
10 6
"Damaged" Region
10
10
10
18
10
17
16
• ••
•
• ••
•
•
••
•
•
•
••
••
••
•
••
• ••
• ••
•
•
••
••
•
•
•
••
••
•
•
•
•
••
•
•
••
••
••
•
•
•
•
•
•
•
•
•
• •
•• •
•
•
••
•
•
••
• •
•
••
•
15
10 14
0
Inactive
Mobility (cm2 / V-sec)
Measured Resistance (Ohms)
10
10
10
10
0.1
0.2
0.3
0.4
DEPTH - microns
0.5
0.6
5
4
nnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnn
nn
n
n
nn
n
n
nn
n
n
nn
nn
nn
nnnnnnnnnn
3 n
2
10 1
0
0.1
0.2
0.3
0.4
DEPTH - microns
SOLECON LABS, Reno, Nevada (775) 853-5900
0.5
0.6
A SOLECON L AB
SS
EM
AR
IN
CMOS (P-channel Source-Drain)
10 20
ppppppp
pp
p
p
10
19
p
p
p
p
p
p
p
p
p
p pp PPP
pppp pppp p p
pppp
ppp
ppp
pp
pp
ppp
p
p
pp
p
pp
p
pp
p
p
p
p
pp
p
pp
p
p
p
p
p
p
p
p
p
p
p
10 18
p
p
10 17
p
nnn
nn
nnn
nnnnn
nnn
10 16
n
n
n
n
nn
nn
nnnn
nn
n
nnn
nn
nn
nn
n
nn
nn
p
n
10 15
p
nn
nn
nnnn
nn
nnn
nn
nn
nn
n
nn
nn
n
p
n
n
p
n
pp
10 14
pp
pp
ppppp ppp
pp
p
pp
pppppppp
ppp
p
pp
p
p
p
n
p
p
np
n p
10 13
0
.1
.2
.3
DEPTH - microns
.4
0
Shallow Profile to
Characterize the Source-Drain
CMOS
1
p
2
3
4
DEPTH - microns
5
6
0
2
p
4
6
8
DEPTH - microns
Steeper Profile (Plotted on 2 Depth Scales)
to Characterize the
N-Well, Epi, and Substrate
SOLECON LABS, Reno, Nevada (775) 853-5900
10
12
A SOLECON L AB
SS
EM
1) Bevel edge: Clear edge is required to identify fringes from different
films near the active area, starting points and footprints. We use high
quality optical microscope with dark field illumination to identify this
2) Bevel angle: Bevel angle multiplied by step increments influence the
depth. Can influence shape, Xj, Base width measurements, etc.
particularly in shallow SRPs
3) Step increments
4) Location of interest: Falling out of pattern and probing adjacent
structures can lead to distorted profiles
5) Probe tip condition: Probe penetration, Calibration, Data Smoothing:
While smoothing data, it is necessary to follow data trends, visually
examine and suppress concavity or convexity and not allow data to
follow random noise by choosing best fits and appropriate correction
factors
Factors
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Factors influencing SRP measurements
(Xj, Shape, Carrier Concentration)
A SOLECON L AB
SS
EM
Structures
CMOS STRUCTURES
BIPOLAR STRUCTURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Epi/Substrate
P-Well/Epi
N-Well/Epi
Poly/Gate Ox/Epi
Poly/Gate Ox/N-Channel
Poly/Gate Ox/P-Channel
P+/Epi
P+/NWell
N+/Epi
N+/PWell
NLDD
PLDD
Under field Ox with implant
Under field Ox without
implant
Epi/Substrate
Epi/Buried Layer/Substrate
Base/Epi
Base/Epi/Buried layer/Sub
Base/Isolation/Epi/Sub
Emitter/Base/Epi
Emitter/Base/Epi/Buried layer
Sinker/Epi/Sub
Sinker/Epi/Buried layer
Isolation/Epi/Sub
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Common Structures of Interest For SRA
A SOLECON L AB
SS
EM
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
QAChecklist
Was the profile run in the location specified by the requester?
Were the final profiles shown to lab supervisor?
Are the profiles plotted with correct crystal orientation?
Was the customer contacted for information regarding orientation or a break
test done?
Are the step increments optimal?
Do the job numbers match those of customer copy?
Do the sample numbers match those of customer copy?
Are there different profiles for the same file numbers and sample numbers?
Are the file numbers matching with customer copy?
Was Calibration Check done for epi samples?
Are the correction factors, smoothing factors optimal?
Was hot probe done on all samples where this was necessary? Hot probes
wires not reversed?
Do scalings (y axis) match so customer can overlay with reference jobs and
supreme 4?
Has frsp been tried for p to p+ and n to n+ layers and for dips at epi to n+
junctions?
Were the bevel angle scales chosen on the full axis according to information
posted at profilometer?
Was there a close correlation between the 4 point probe and SRA data sheet rho
on bare silicon/test samples?
Check customer satisfaction to see if profiles are in line with his expectations.
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
QA Checklist
A SOLECON L AB
SS
EM
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Qmetrics
Management responsibility
Quality manual
Business planning
Contract review
Written procedures on critical operations
Purchasing
Control of customer supplied samples
Sample identification and traceability via job tracking system
Statistical techniques
Measurement and inspections
Control of measurement and test equipment
Control of non conforming profiles
Corrective and preventive actions
ESD control
Internal and external quality control audits
Control of quality records
Customer training records
Shipping of profiles
Customer satisfaction records
Inter lab comparisons, round robin records
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Quality Systems In Line With ISO 9001/17025
A SOLECON L AB
SS
EM
1. Over 25 years of experience and continuous improvement in the art
and science of beveling and probing with best known method on profiling
carrier concentration.
2. High spatial resolution of dopant and depth profiles.
3. Low cost operation and high return on investment for customers,
easily affordable.
4. Turnover within 24 hours available.
5. Fast and accurate feedback to fab and foundries.
6. Over 300 satisfied customers.
7. Both SRA and process expertise available at Solecon Labs.
8. Edge over competitors as far as reproducibility goes.
WhySRA
SOLECON LABS, Reno, Nevada (775) 853-5900
AR
IN
Why Solecon Labs and SRA