TN1217 Technical note STW81200 test report Introduction This document provides a general overview of the STW81200 performance using the evaluation kit STW81200-EVB. An on-board 100 MHz reference crystal oscillator is used. The loop bandwidth is 70 kHz with a 5 mA charge-pump current and a PFD frequency of 50 MHz. The main focus of this report is phase noise, VCO features, settling time, output power and current consumption at different temperatures and supply voltages. The STW81200 device is extremely flexible and configurable in terms of supply voltage and parameter settings. For custom designs please refer to the software tool STSW-RFSOL001 – STWPLLSim simulation tool for STW81200, available also on the STMicroelectronics website. June 2015 DocID027987 Rev 1 1/25 www.st.com 1 Contents TN1217 Contents 1 STW81200 short description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 STW81200 measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 2.1 Equipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Measurement list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Measurement results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 Phase noise integer mode vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . 8 3.2 Phase noise fractional mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.2.1 Measurements at 4500.01 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.2.2 Measurements at 4500.8 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.3 Phase Noise vs. supply and RF divider . . . . . . . . . . . . . . . . . . . . . . . . . . .11 3.4 Phase Noise vs. supply and LP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3.4.1 Measurements at 4500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3.4.2 Measurements at 2250 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3.5 Integrated phase noise and FOM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.6 Spurs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.6.1 Spur measurements vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.6.2 Spur measurements vs. frequency offset and PFD frequency . . . . . . . . 16 3.7 KVCO vs. frequency and supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.8 Tuning voltage after VCO calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.9 Settling time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3.10 Output power vs. temp and RF divider . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 3.11 Current consumption vs. frequency and temperature . . . . . . . . . . . . . . . 21 3.12 Current consumption vs. frequency and LP . . . . . . . . . . . . . . . . . . . . . . . 22 4 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 2/25 DocID027987 Rev 1 TN1217 List of tables List of tables Table 1. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 DocID027987 Rev 1 3/25 3 List of figures TN1217 List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42. 4/25 STW81200 functional block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 STW81200 application diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 STW81200-EVB evaluation board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Phase noise at 3000 MHz (FPFD=50 MHz, 5.0 V supply) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Phase noise at 4500 MHz (FPFD=50 MHz, 5.0 V supply) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Phase noise at 6000 MHz (FPFD=50 MHz, 5.0 V supply) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Phase noise at 4500.01 MHz, Direct (FPFD = 50 MHz, 5.0 V supply). . . . . . . . . . . . . . . . . . 9 Phase noise at 4500.01 MHz, DIV2 (FPFD = 50 MHz, 5.0 V supply) . . . . . . . . . . . . . . . . . . 9 Phase noise at 4500.01 MHz, DIV4 (FPFD = 50 MHz, 5.0 V supply) . . . . . . . . . . . . . . . . . . 9 Phase noise at 4500.8 MHz, Direct . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Phase noise at 4500.8 MHz, DIV2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Phase noise at 4500.8 MHz, DIV4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Phase noise at 4500 MHz (FPFD = 50 MHz). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Phase noise at 4500 MHz (FPFD = 50 MHz, 5.0 V supply) . . . . . . . . . . . . . . . . . . . . . . . . . 11 Phase noise at 4500 MHz, (FPFD = 50 MHz, 5.0 V supply) . . . . . . . . . . . . . . . . . . . . . . . . 12 Phase noise at 4500 MHz, (FPFD = 50 MHz, 3.6 V supply) . . . . . . . . . . . . . . . . . . . . . . . . 12 Phase noise at 4500 MHz, (FPFD = 50 MHz, 3.0 V supply) . . . . . . . . . . . . . . . . . . . . . . . . 12 Phase noise at 2250 MHz, (FPFD = 50 MHz, 5.0 V supply) . . . . . . . . . . . . . . . . . . . . . . . . 13 Phase noise at 2250 MHz, (FPFD = 50 MHz, 3.6 V supply) . . . . . . . . . . . . . . . . . . . . . . . . 13 Phase noise at 2250 MHz, (FPFD = 50 MHz, 3.0 V supply) . . . . . . . . . . . . . . . . . . . . . . . . 13 Integrated phase noise and jitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure of merit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Integer boundary spurs vs. temperature (FPFD=50 MHz, 5.0 V supply) . . . . . . . . . . . . . . 15 Fractional spurs vs. temperature (FPFD=50 MHz, worst case, 5.0 V supply) . . . . . . . . . . 15 Fractional spur vs. offset from 4.5 GHz, 5.0 V supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 PFD spurs vs. PFD frequency, 5.0 V supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 KVCO characteristics, 5.0 V supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 KVCO characteristics, 3.6 V supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 KVCO characteristics, 3.0 V supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Tuning voltage after calibration, 5.0 V supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Tuning voltage after calibration, 3.6 V supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Tuning voltage after calibration, 3.0 V supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Settling time from 4 GHz to 4.5 GHz wideband view . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Settling time from 4 GHz to 4.5 GHz narrowband view . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Single ended output power vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Single ended output power vs. RF divider . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Current consumption, 5.0 V supply RF1 output On (2 single-ended signals available) . . . 21 Current consumption, 3.6 V supply RF1 output On (2 single-ended signals available) . . . 21 Current consumption, 3.0 V supply RF1 output On (2 single-ended signals available) . . . 21 Current consumption, 5.0 V supply RF1 output On (2 single-ended signals available) . . . 22 Current consumption, 3.6 V supply RF1 output On (2 single-ended signals available) . . . 22 Current consumption, 3.0 V supply RF1 output On (2 single-ended signals available) . . . 22 DocID027987 Rev 1 TN1217 1 STW81200 short description STW81200 short description The STW81200 has the following features: • Dual architecture frequency synthesizer (Fractional-N and Integer-N) using three VCOs to cover a fundamental frequency range of 3.0 GHz to 6.0 GHz. • Programmable RF output divider stage dividing the VCO output by 1,2,4,8,16,32 or 64. • On-chip LDO voltage regulators and internally-matched broadband RF outputs to save size and external component count. • External VCO support to cover the most stringent requirements (for example GSM) • Flexible supply voltage (3.0 to 5.4 V) and low-power mode. • Power consumption at full performance: 0.8 W for 5.0 V at 4.5 GHz • VFQFPN36, 6 x 6 x 1 mm package. Figure 1. STW81200 functional block diagram DocID027987 Rev 1 5/25 25 STW81200 short description TN1217 A typical application scenario is shown in Figure 2. Figure 2. STW81200 application diagram 6/25 DocID027987 Rev 1 TN1217 STW81200 measurements 2 STW81200 measurements 2.1 Equipment The following equipment was used to make the measurements detailed in this report: • Agilent E5052B Signal source analyzer • Evaluation Board (Figure 3). Figure 3. STW81200-EVB evaluation board 2.2 Measurement list The electrical parameter measurements are reported in the following sections: • Section 3.1: Phase noise integer mode vs. temperature • Section 3.2: Phase noise fractional mode • Section 3.3: Phase Noise vs. supply and RF divider • Section 3.4: Phase Noise vs. supply and LP • Section 3.5: Integrated phase noise and FOM • Section 3.6: Spurs • Section 3.7: KVCO vs. frequency and supply • Section 3.8: Tuning voltage after VCO calibration • Section 3.9: Settling time • Section 3.10: Output power vs. temp and RF divider • Section 3.11: Current consumption vs. frequency and temperature • Section 3.12: Current consumption vs. frequency and LP. DocID027987 Rev 1 7/25 25 Measurement results TN1217 3 Measurement results 3.1 Phase noise integer mode vs. temperature Figure 4. Phase noise at 3000 MHz (FPFD=50 MHz, 5.0 V supply) Figure 5. Phase noise at 4500 MHz (FPFD=50 MHz, 5.0 V supply) Figure 6. Phase noise at 6000 MHz (FPFD=50 MHz, 5.0 V supply) Notes 8/25 • Phase noise at Min, Mid, Max VCO frequency range • Loop BW = 70 kHz; REF=100 MHz; PFD=50 MHz • In band phase noise(10kHz): -105 dBc/Hz @4.5 GHz • Out of band phase noise(1MHz): -133.5 dBc/Hz @4.5 GHz • 3 GHz to 6 GHz: 6 dB scaling • Very limited temperature variation. DocID027987 Rev 1 TN1217 Measurement results 3.2 Phase noise fractional mode 3.2.1 Measurements at 4500.01 MHz Figure 7. Phase noise at 4500.01 MHz, Direct (FPFD = 50 MHz, 5.0 V supply) Figure 8. Phase noise at 4500.01 MHz, DIV2 (FPFD = 50 MHz, 5.0 V supply) Figure 9. Phase noise at 4500.01 MHz, DIV4 (FPFD = 50 MHz, 5.0 V supply) Notes • Phase noise at Mid VCO frequency range, Mid/2, Mid/4, ambient temperature • Integer Boundary Spurs: typical behavior at carrier frequencies 10 kHz close to integer multiples of PFD frequency • Typ value: -50 dBc (baseline), scaling down as expected using RF dividers (6dB each divide by 2) • In band phase noise (10 kHz): -103 dBc/Hz @ 4.5 GHz • Available improvements could be adopted case by case: – Dithering – Programmable charge pump leakage current – Programmable PFD delays. DocID027987 Rev 1 9/25 25 Measurement results 3.2.2 TN1217 Measurements at 4500.8 MHz Figure 10. Phase noise at 4500.8 MHz, Direct Figure 11. Phase noise at 4500.8 MHz, DIV2 Figure 12. Phase noise at 4500.8 MHz, DIV4 Notes 10/25 • Phase noise at Mid VCO frequency range, Mid/2, Mid/4, ambient temperature • Out of band IBS (800 kHz) • Typical value: -75 dBc (baseline), scaling down as expected using RF dividers (6 dB for each divide by 2) • In-band phase noise (10 kHz): -103dBc/Hz @ 4.5 GHz • Available improvements could be adopted case by case: – Dithering – Programmable charge pump leakage current – Programmable PFD delays. DocID027987 Rev 1 TN1217 3.3 Measurement results Phase Noise vs. supply and RF divider Figure 13. Phase noise at 4500 MHz (FPFD = 50 MHz) Figure 14. Phase noise at 4500 MHz (FPFD = 50 MHz, 5.0 V supply) Notes Performance respect to supply scaling: • Lower supply gives lower power consumption • Higher supply gives higher performance • In band phase noise not affected from supply scaling • VCO phase noise affected from supply scaling (~5dB scaling from 5.0 V to 3.0 V). Performance respect to VCO divider (out of loop): • 6dB scaling for each divide by 2. DocID027987 Rev 1 11/25 25 Measurement results TN1217 3.4 Phase Noise vs. supply and LP 3.4.1 Measurements at 4500 MHz Figure 15. Phase noise at 4500 MHz, (FPFD = 50 MHz, 5.0 V supply) Figure 16. Phase noise at 4500 MHz, (FPFD = 50 MHz, 3.6 V supply) Figure 17. Phase noise at 4500 MHz, (FPFD = 50 MHz, 3.0 V supply) Notes 12/25 • Low Power (LP) mode available for 5.0 V/3.6 V/3.0 V supply • Direct output measurement • Trade-off between phase noise floor performance and current consumption – 5.0 V/7 dBm Pout/Std: 160 mA; floor=-160 dBc/Hz – 5.0 V/1 dBm Pout/LP: 120 mA; floor=-156 dBc/Hz. DocID027987 Rev 1 TN1217 3.4.2 Measurement results Measurements at 2250 MHz Figure 18. Phase noise at 2250 MHz, (FPFD = 50 MHz, 5.0 V supply) Figure 19. Phase noise at 2250 MHz, (FPFD = 50 MHz, 3.6 V supply) Figure 20. Phase noise at 2250 MHz, (FPFD = 50 MHz, 3.0 V supply) Notes • Low Power (LP) mode available for 5.0 V/3.6 V/3.0 V supply • DIV2 output measurement • Trade-off between phase noise floor performance and current consumption – 5.0 V/7 dBm Pout/Std: 180 mA; floor=-160 dBc/Hz – 5.0 V/1 dBm Pout/LP: 135 mA; floor=-154 dBc/Hz. DocID027987 Rev 1 13/25 25 Measurement results 3.5 TN1217 Integrated phase noise and FOM Figure 21. Integrated phase noise and jitter Figure 22. Figure of merit Notes • Integrated phase noise (dBc) and jitter (ps), integration BW=1 kHz-100 MHz, full output frequency range at 5.0 V/3.6 V/3.0 V supply • PLL figure of merit: -227 dBc/Hz @ 100 kHz FOM = PhaseNoise[dBc/Hz] - 10log(PFD)-20logN 14/25 DocID027987 Rev 1 TN1217 Measurement results 3.6 Spurs 3.6.1 Spur measurements vs. temperature Figure 23. Integer boundary spurs vs. temperature (FPFD=50 MHz, 5.0 V supply) Figure 24. Fractional spurs vs. temperature (FPFD=50 MHz, worst case, 5.0 V supply) Notes • Integer Boundary (10 kHz)/Fractional (800 kHz) Spurs in the overall carrier range vs. temperature (see also Section 3.2: Phase noise fractional mode). • Typical value -50 dBc (baseline) • Worst case IBS < -40dBc • Worst case Fractional Spur < -70 dBc • Available improvements could be adopted case by case: – Dithering – Programmable charge pump leakage current – Programmable PFD delays. DocID027987 Rev 1 15/25 25 Measurement results 3.6.2 TN1217 Spur measurements vs. frequency offset and PFD frequency Figure 25. Fractional spur vs. offset from 4.5 GHz, 5.0 V supply Figure 26. PFD spurs vs. PFD frequency, 5.0 V supply Notes • Integer Boundary Spurs increasing carrier frequency from 4.5 GHz +1 kHz to 4.5 GHz +6 MHz – • • 16/25 IBS attenuated by loop filter; better attenuation can be obtained with narrower band loop filter PFD spurs vs. carrier frequency – Ref=100 MHz, PFD=50 MHz (blue) – Ref=100 MHz, PFD=100 MHz (red) PFD spurs always below -80 dBc DocID027987 Rev 1 TN1217 3.7 Measurement results KVCO vs. frequency and supply Figure 27. KVCO characteristics, 5.0 V supply Figure 28. KVCO characteristics, 3.6 V supply Figure 29. KVCO characteristics, 3.0 V supply Notes • VCO Gain (KVCO) at 5.0 V/3.6 V/3.0 V supply • KVCO variation minimized using KVCO compensation feature. (The charge pump current automatically adjusted to keep loop bandwidth constant at a certain frequency.) • 5-bit programmable charge pump current to further adjust loop bandwidth vs. carrier frequency. DocID027987 Rev 1 17/25 25 Measurement results 3.8 TN1217 Tuning voltage after VCO calibration Figure 30. Tuning voltage after calibration, 5.0 V supply Figure 31. Tuning voltage after calibration, 3.6 V supply Figure 32. Tuning voltage after calibration, 3.0 V supply Notes 18/25 • Thermal cycle lock guaranteed condition - VCTRL pin voltage in extreme temperature conditions • VCO Calibration executed at Max. (and Min.) temperature, measurement done at Min. (and Max.) temperature • 125°C ΔTLK at 5.0 and 3.6 V Supply • 115°C ΔTLK at 3.0 V Supply. DocID027987 Rev 1 TN1217 3.9 Measurement results Settling time Figure 33. Settling time from 4 GHz to 4.5 GHz wideband view Figure 34. Settling time from 4 GHz to 4.5 GHz narrowband view Notes • Settling time: VCO calibration + PLL fine tuning – • Settling time does not depend on frequency jump Very fast calibration algorithm leading to short settling time – VCO calibration typical duration: 45 μs • PLL fine tuning depending on loop bandwidth (70 kHz) • Overall settling time: ~90 μs. DocID027987 Rev 1 19/25 25 Measurement results 3.10 TN1217 Output power vs. temp and RF divider Figure 35. Single ended output power vs. temperature Figure 36. Single ended output power vs. RF divider Notes 20/25 • Broadband internal matching to provide high power in the whole supported RF range • Very good stability versus temperature • 3-bit programmable output power level • Additional 3 dB of output power using combined outputs (differential outputs) • Allowed settings at 5 V, 3.6 V supply: RF_OUT_PWR=0 to 7 • Allowed settings at 3.0 V supply: RF_OUT_PWR=0,1 DocID027987 Rev 1 TN1217 3.11 Measurement results Current consumption vs. frequency and temperature Figure 37. Current consumption, 5.0 V supply RF1 output On (2 single-ended signals available) Figure 38. Current consumption, 3.6 V supply RF1 output On (2 single-ended signals available) Figure 39. Current consumption, 3.0 V supply RF1 output On (2 single-ended signals available) Notes • Current consumption at 5.0 V, 3.6 V, 3.0 V supply vs. temperature in the overall carrier range at max RF power • Very good stability vs. temperature • Increasing at lower frequency due to out of loop RF dividers. DocID027987 Rev 1 21/25 25 Measurement results 3.12 TN1217 Current consumption vs. frequency and LP Figure 40. Current consumption, 5.0 V supply RF1 output On (2 single-ended signals available) Figure 41. Current consumption, 3.6 V supply RF1 output On (2 single-ended signals available) Figure 42. Current consumption, 3.0 V supply RF1 output On (2 single-ended signals available) Notes 22/25 • Current consumption at 5.0 V, 3.6 V, 3.0 V supply in Standard and Low-Power modes • Flexible supply and low power mode to trade performance with power consumption. DocID027987 Rev 1 TN1217 4 Conclusions Conclusions • Leading edge integrated phase noise and FOM • Very good performances of VCOs • Very stable over temperature • Stable spurs performance vs. frequency and temperature • Fast settling time • Wideband output matching • Very configurable device: flexible supply and low power mode to trade performance with power consumption • Single supply from 3.0 V to 5.4 V • For documentation and HW/SW tools check on: http://www.st.com/stw81200ad DocID027987 Rev 1 23/25 25 Revision history 5 TN1217 Revision history Table 1. Document revision history 24/25 Date Revision 23-Jun-2015 1 Changes First release. DocID027987 Rev 1 TN1217 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID027987 Rev 1 25/25 25