SDT122
53mm / 4.0kV THYRISTOR
Type SDT122 thyristor is suitable for phase control applications such as HVDC valves, static VAR
compensators and synchronous motor drives.
The silicon junction is manufactured by the proven multi-diffusion process and is supplied in an
industry standard disc-type package, ready to mount to forced or naturally cooled heat dissipators
using commercially available mechanical clamping hardware.
ON-STATE CHARACTERISTIC
Process Maximum
8 ms Sine Pulses
On-State Voltage, Vt (V)
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
100
Initial Tj
PRINCIPAL RATINGS AND CHARACTERISTICS
Repetitive peak offstate & reverse volts
VD R M
VR R M
T J=0
to 125oC
up to
4000
Repetitive working
crest voltage
VD W M
VD R M
T J=0
to 125oC
0.8VD R M
0.8VR R M
Off-state & reverse
leakage current
ID W M
IR W M
T J=0
to 125oC
75
75
ma
Average on-state
current
IT(AV)
T case=
70oC
950
A
Peak half-cycle
non-rep surge current
IT S M
60 Hz
50 Hz
On-state voltage
VT M
IT =1kA
tP=8ms
T J=125oC
1.60
V
Critical rate of rise
of on-state current
di/dt
rep
T J=125oC
60 Hz
75
A/us
Critical rate of rise
of off-state voltage
dv/dt
T J=125oC
V D = .8VD R M
1000
V/us
Recovery current
IR M
T J=125oC
2A/us
5A/us
60
110
16.0
14.7
V
kA
125 C
25 C
1000
On-State Current, It (A)
10000
95f:
MECHANICAL OUTLINE
J
CL
CL
2 0° ±5 °
A
Turn-on delay
td
Vd=.5VD R M
3
us
Turn-off time
T off
5A/us,-100V
20V/us to 2000V
500
us
Thermal resistance
R thJC
.025
c/w
Externally applied
clamping force
F
5500
24.5
lbs.
kN
A Ø
B Ø
D
B Ø
A Φ = 2.96 in (75.2 mm)
B Φ=1.90 in (48.3 mm)
D=1.07 in (27.2 mm)
REPETITIVE PEAK REVERSE
AND OFF-STATE BLOCKING
VOLTAGE
TJ= 0 to 125oC
MODEL
VD R M
VR R M
(volts)
(volts)
SDT122FT
4000
4000
SDT122FS
3900
3900
SDT122FR
3800
3800
SDT122FP
3700
3700
SDT122FM
3600
3600
SDT122FK
3500
3500
95f: 5/27/96
SDT122
FULL CYCLE AVERAGE POWER LOSS
versus
PEAK CURRENT at 50/60 Hz
MAXIMUM PEAK RECOVERY CURRENT
(plasma spreading and conduction loss)
Pavg (watts)
110
100
2600
Irm, (A)
2400
2200
approximation
120 deg.sq. wave
overlap angle
= 20 degree
2000
1800
Irm
Qrr = ---di/dt
I T(av) = IT / 3
50
(uC)
1600
2
(A/us)
1400
180 degree
1200
sinewave
Tj ( C)
1000
800
I T(av) = I T / 3.1416
125
20
600
25
400
200
0
0
500
1000
1500
2000
2500
10
3000
Peak Current,It (A)
.1
1.
5.
Circuit diR/dt, (A/us)
95f:
95F:
Full Cycle Pow er Loss (w atts)
50/60 Hz, TJ =125oC
IT (peak)
Half-sine
3 Phase
(A)
180o
120o
200
63
69
400
147
162
600
244
270
800
351
390
1000
468
523
1200
596
669
1400
734
828
1600
883
1001
1800
1043
1187
2000
1213
1387
2200
1394
1601
2400
1556
1829
2600
1789
2071
2800
2004
2327
3000
2229
2598
GATE SUPPLY REQUIREMENTS
Open circuit voltage
30 V
Short circuit current
- rise time
3 A
0.5us
Pulse duration (min)
20 us
sh2 7/11/95