Keysight 1GC1-4023
DC - 4 GHz, High-Gain, Dual-Mode:
Low-Noise/Medium-Power HBT Amplifier
Data Sheet
Features
–– Dual operating modes1:
–– Low-noise mode:
NF = 3 dB
P–1dB = 14 dBm
TOI = 24 dBm
SHI = 48 dBm
ITotal = 64 mA
PDC = 207 mW
–– High-power mode:
NF = 3.5 dB
P-1dB = 19.5 dBm
TOI = 33 dBm
SHI = 53 dBm
ITotal = 90 mA
PDC = 373 mW
–– Broad bandwidth, F-1dB:
7 GHz (S.S. gain)
3 GHz (POUT)
–– High gain: (3 GHz)
20.5 dB ±0.8 dB
–– Low l/f noise corner: < 20 kHz
–– Single supply operation:
VSupply > 4.8 volts
1. Typical performance @ F=3 GHz,
PDC=DC power dissipation on-chip.
02 | Keysight | 1GC1-4023 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier - Data Sheet
Description
The 1GC1-4023 is a DC to 4 GHz, 20 dB gain, amplifier designed for use as a cascadable
gain block as either a Low–Noise preamplifier for receivers or as an output amplifier for
moderate output power applications. The device consists of a modified Darlington feedback pair which reduces the sensitivity to process variations and provides 50 ohm input/
output port matches. This amplifier is fabricated using HFTC’s GaAs Heterojunction
Bipolar Transistor (HBT) process which provides excellent process uniformity, reliability
and 1/f noise performance.
Absolute maximum ratings1
(@ TA = 25 °C, unless otherwise indicated)
Symbol
Parameters/conditions
VCC
Min
Max
Units
VCC pad voltage
6.0
Volts
VOUT
RF output pad voltage
4.3
Volts
ICC
Stage one current
22
mA
IOUT
Stage two current
75
mA
Pin
RF input power, continuous 0 dbm
+85
°C
+165
°C
+300
°C
Channel temperature +150 °C
Tch
Die backside temperature
–55
Tst
Storage temperature
–65
Tmax
Max. assembly temperature
Tbs
2
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. MTTF > 5 x 105 hours @ T bs = 85 °C. Operation in excess of maximum backside temperature (T bs) will
degrade MTTF.
–– Chip size: 790 x 480 μm
(31.1 x 18.9 mils)
–– Chip size tolerance: ±10 μm
(±0.4 mils)
–– Chip thickness: 127 ±15 μm
(5.0 ±0.6 mils)
–– Pad dimensions: 70 x 70 μm
(2.8 x 2.8 mils), or larger
03 | Keysight | 1GC1-4023 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier - Data Sheet
DC specifications/physical properties1
(TA = 25 °C, ZIN = ZOUT = 50 Ω, R OUT = [(VSupply – VOUT )/IOUT])
Symbol
Parameters/conditions
Min
Typ
Max
Units
VCC
Stage one collector voltage
4.8
5.0
6.0
Volts
θ J-bs
Thermal resistance
(junction–to–backside at TJ = 150 °C)
175
°C/Watt
Low–noise mode
VSEL = OPEN, ISEL = OPEN
ICC
Stage one collector current
7
9
11
75
mA
IOUT
Stage two collector current
55
ICC + IOUT
Total supply current
64
mA
VRFin RF input voltage (ICC = 9 mA, IOUT = 55 mA)
2.6
2.85
3.1
Volts
VOUT
RF output voltage (ICC = 9 mA, IOUT = 55 mA)
2.7
2.95
3.2
Volts
PDC
Total DC power dissipation (on–chip)
(VCC = +5 V, VOUT = 3 V, IOUT = 55 mA)
mA
207
mW
High POUT mode
VSEL = GND, ISEL = GND
ICC
Stage one collector current
IOUT
Stage two collector current
ICC + IOUT
Total supply current
15.0
18.5
21.5
mA
72
75
mA
90.5
mA
VRFin
RF input voltage (ICC = 18.5 mA, I OUT = 72 mA)
2.7
2.90
3.1
Volts
VOUT
RF output voltage (ICC= 18.5 mA, IOUT = 72 mA)
3.6
3.85
4.1
Volts
PDC
Total DC power dissipation (on–chip)
(VCC = +5 V, VOUT = 3.9 V, IOUT = 72 mA)
373
mW
1. Backside ambient operating temperature TA = T bs = 25 °C unless otherwise noted.
RF specifications1
(TA = 25 °C, ZIN = ZOUT = 50 Ω, R OUT = [(VSupply – VOUT )/IOUT])
Symbol
Parameters/conditions
Min
Typ
BW
Operating bandwidth (f –1db, high POUT mode)
S21
6
7
Small–signal gain (DC - 3 GHz, low-noise mode)
19.5
20.5
21.5
dB
Small–signal gain (DC - 3 GHz, high POUT mode)
19.5
21
22
dB
±0.8
Max
Units
GHz
∆S21
Gain flatness (DC - 3 GHz)
dB
TC
Gain temperature coefficient (DC - 3 GHz, low-noise mode)
0.005
dB/°C
Gain temperature coefficient (DC - 3 GHz, high POUT mode)
0.003
dB/°C
RLIN(Min)
Minimum input return loss (DC - 3 GHz)
15
dB
RLOUT(Min)
Minimum output return loss (DC - 3 GHz)
15
dB
S12
Reverse isolation (DC - 3 GHz)
22
dB
04 | Keysight | 1GC1-4023 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier - Data Sheet
RF specifications1(continued)
(TA = 25 °C, ZIN = ZOUT = 50 Ω, R OUT = [(VSupply – VOUT )/IOUT])
Low–noise mode
VSEL = OPEN, ISEL = OPEN
Symbol
Parameters/conditions
P–1dB
Output power at 1 dB gain compression (F = 3 GHz)
P SAT
Output power at 4 dB gain compression (F = 3 GHz)
H2
H3
Min
Typ
12
Max
Units
14
dBm
15
dBm
2 harmonics (F = 3 GHz, POUT = +5 dBm)
–30
dBc
3rd harmonics (F = 3 GHz, POUT = +5 dBm)
–50
dBc
SHI
2 harmonic intercept point
(fund. = 1.5 GHz, 2*fund. = 3.0 GHz, POUT (fund.) = 0 dBm)
48
dBm
TOI
Two-tone, third order intercept point
(tone spacing = 200 kHz, fund. = 3 GHz)
24
dBm
NF
Noise figure (F = 3 GHz)
3.0
nd
nd
4.0
dB
High POUT mode
VSEL = GND, ISEL = GND
P–1dB
Output power at 1 dB gain compression (F = 3 GHz)
19.5
dBm
PSAT
Output power at 4 dB gain compression (F = 3 GHz)
20.5
dBm
18.5
H2
2 harmonics (F = 3 GHz, POUT = +5 dBm)
–35
dBc
H3
3rd harmonics (F = 3 GHz, POUT = +5 dBm)
–57
dBc
SHI
2 harmonic intercept point
(fund. = 1.5 GHz, 2*fund. = 3.0 GHz, POUT (fund.) = 0 dBm)
53
dBm
TOI
Two–tone, third order intercept point
(tone spacing = 200 kHz, fund. = 3 GHz)
33
dBm
NF
Noise figure (F = 3 GHz)
3.5
nd
nd
1. All large–signal specifications referred to output power
VC C
4.6 pF
7.8 Ω
547 Ω
RF input
RF output
(V RFout )
2 x 3 µm (5)
2 x 4 µ m (15)
2KΩ
90 Ω
0.3 pF
3.5 Ω
90 Ω
V SEL
I SEL
GND (Backside)
Figure 1. 1GC1-4023 simplified schematic
5.0
dB
05 | Keysight | 1GC1-4023 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier - Data Sheet
Applications
The 1GC1-4023 is designed for use in RF and microwave communications systems and
instrumentation applications where broadband low-noise operation or moderate output
power amplification is required. The device is designed to operate into 50 Ω.
Biasing and Operation
The 1GC1-4023 can be operated from a single positive supply or two independent
supplies greater than 4.8 volts. The first stage collector voltage (VCC ) must be biased
between 4.8 and 6 volts. An external RCC resistor is required if the supply voltage is
greater than 6 volts.
The second stage collector voltage (VOUT ) is supplied through the RF output port and
should be biased through an off-chip drop resistor (ROUT ) or current source. An external
RF choke circuit consisting of a series inductor and shunt capacitor is typically used to
pass the DC bias to the RF output. This high impedance bias feed eliminates loading on
the amplifier output. The output current is adjustable via the off-chip ROUT bias resistor
value. For more information on the correct values of RCC and ROUT, refer to the information
and formulas available in Figure 2.
The 1GC1-4023 features dual-mode operation in either a low-noise, low-PDC mode or
high POUT mode and are selectable by two independent control contacts as summarized
in the following table:
RCC bias formulas
ROUT bias formulas
For: 4.8 V ≤ VSupply ≤ 6 ⇒ RCC = 0 Ω
For: VSupply > 6 V ⇒ RCC = [(VSupply - 5) ÷ (ICC)] K Ω
where I CC = 9 mA @ ISEL = Open circuit
or I CC = 18.5 mA @ ISEL = GND
ROUT = [(VSupply - VOUT ) ÷ (IOUT )] K Ω
where VOUT = 3.0 v @ VSEL = Open circuit
or VOUT = 3.9 v @ VSEL = GND
and IOUT £ 72 mA
V Supply
C Bypass
R OUT
R CC
V CC
RF IN
C DC
V OUT
V IN
RF OUT
1GC1-4023
C DC
Bias tee
GND (backside)
V SEL
Figure 2. 1GC1-4023 biasing diagram
I SEL
Operating mode states
VSEL
state
(Pin 4)
VOUT
(V)
ISEL
state
(Pin 5)
ICC
(mA)
Low
noise
OPEN
+ 2.9
OPEN
~9
High
power
GND
+ 3.9
GND
~18.5
Operating
mode
06 | Keysight | 1GC1-4023 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier - Data Sheet
Low-noise mode operation
In this mode the device is biased to operate with the lowest possible noise figure and
minimum DC power dissipation. The RF output voltage is set to VOUT = 2.9 volts by
applying an open circuit to the VSEL pad and the stage one current is reduced to ~9 mA by
applying an open circuit to the ISEL pad.
High POUT mode operation
In this mode the device is biased to operate with the highest possible output power
and power bandwidth while still delivering reasonably low DC power dissipation. The
RF output voltage is set to VOUT = 3.9 volts by grounding the VSEL pad and the stage
one current is increased to ~18 mA to optimize power compression characteristics by
applying an short circuit to the ISELpad.
In either mode the output current (IOUT ) can be adjusted to any value up to 72 mA by
varying the off-chip biasing resistor (ROUT ) or adjusting the RF output current source,
whichever is employed. Output currents (IOUT ) lower than 55 mA will adversely affect
output power performance above 2 GHz. Higher output currents (maximum of 72 mA)
will maximize POUT and output power bandwidth at the expense of slightly higher DC
power dissipation and higher noise figure. If ROUT is greater than 300 ohms, the output RF
choke may be omitted, however, the amplifier's gain may be reduced by ~1.0 dB.
DC blocking caps are recommended at the package RF input and output pads since the
voltage at these pins will be between 3 and 4 volts above ground potential. A 100 pF AC
bypass cap is recommended between VCC and ground to prevent low– frequency bias
oscillations. Bypass caps are not required on the VSEL or ISEL pads. For chip bond pad
identification and the device schematic refer to Figures 1 and 3. Refer to the Keysight
Technologies, Inc. document, GaAs MMIC ESD, Die Attach and Bonding Guidelines Application Note (5991-3484EN) for additional information.
VCC
1GC1-4023
RFOUT
(VOUT )
RFIN
GND (backside)
VSEL
Figure 3. 1GC1-4023 chip bias/RF bond pad locations
I SEL
07 | Keysight | 1GC1-4023 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier - Data Sheet
480
1GC1-4023
390
240
90
70
0
0
515
275
70
720 790
Figure 4. 1GC1-4023 chip dimensions
Note: All dimensions in microns.
To VCC supply
(Bypassed via 0.1 µF capacitor)
100 pF RF bypass capacitor
AC coupling capacitor(s)
20 mil. nominal gap
(@ device I/O)
1GC1-4023
RFIN
RFOUT
VSEL
control
line
I SEL
control
line
Figure 5. 1GC1-4023 chip assembly diagram
RoHS Compliance
This part is RoHS compliant, meeting the requirements of the EU Restriction of Hazardous
Substances Directive 2011/65/EU, commonly known as RoHS. Six substances are regulated: lead, mercury, cadmium, chromium VI (hexavalent chromium), polybrominated biphenyls
(PBB), and polybrominated biphenyl ethers (PBDE). RoHS compliance requires that any
residual concentration of these substances is below the Directive’s maximum concentration
values (MCV): cadmium 100 ppm by weight and all others 1000 ppm by weight.
08 | Keysight | 1GC1-4023 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier - Data Sheet
Typical S-parameter Response1
-18
20
-20
18
-22
16
-24
S12
14
-26
Low-noise mode
12
-28
High-power mode
10
0
1
2
3 4 5 6 7
Frequency (GHz)
8
-5
-10
Figure 6. Small-signal gain and reverse isolation min. insertion
loss and return loss vs. frequency
-10
-15
-15
Output
-20
-20
-25
-25
Low-noise mode
-30
-35
-30
9 10
-5
Input
-30
High-power mode
Output return loss,
S22 (dB)
22
(TA = +25 °C, VSupply =+6 v, Zin = Zout = 50 )
0
0
Input return loss,
S11 (dB)
S21
Reverse isolation, S12
(dB)
Small-signal gain, S21
(dB)
(TA = +25 °C, VSupply =+6 v, Zin = Zout = 50 )
24
-16
-35
0 1 2 3 4 5 6 7 8 9 10
Frequency (GHz)
Figure 7. Small-signal input/output return loss
Low-noise/low-power mode
(TA = 25 °C, VSupply = +6 v, IOUT = 55 mA, VSEL= ISEL = Open Circuit, Zin = ZOUT = 50)
Freq.
(MHz)
100
500
1000
1500
2000
2500
3000
3500
4000
5000
6000
7000
8000
9000
10000
dB
–29.8
–27.0
–23.5
–21.9
–21.7
–22.2
–21.6
–18.6
–15.7
–11.6
–8.1
–5.4
–4.3
–3.7
–2.8
S12
Mag
0.032
0.045
0.067
0.080
0.083
0.078
0.083
0.117
0.163
0.263
0.393
0.536
0.613
0.656
0.721
Ang
–11.3
–55.1
–89.5
–119.8
–147.2
–162.8
–158.9
–161.8
178.3
124.0
67.8
26.4
–1.5
–24.7
–42.3
dB
–21.8
–21.9
–22.0
–22.1
–22.4
–22.5
–22.8
–23.1
–23.6
–25.0
–26.8
–28.0
–28.6
–29.3
–29.9
S12
Mag
0.081
0.080
0.080
0.079
0.075
0.075
0.072
0.070
0.066
0.057
0.046
0.040
0.037
0.034
0.032
Ang
–1.2
–6.0
–13.2
–19.7
–26.3
–32.2
–38.4
–45.1
–52.6
–65.0
–72.8
–76.0
–74.7
–84.7
–91.9
dB
19.9
19.9
19.9
20.1
20.2
20.5
20.7
20.8
20.9
20.8
19.7
17.7
15.3
12.4
9.3
S21
Mag
9.851
9.841
9.913
10.061
10.286
10.601
10.883
11.004
11.062
10.912
9.674
7.652
5.820
4.178
2.908
Ang
177.9
169.4
158.6
147.7
136.4
124.3
110.8
96.8
82.6
51.4
17.0
–13.7
–40.8
–65.4
–83.0
dB
–36.1
–32.7
–30.2
–27.7
–24.6
–21.0
–18.1
–15.1
–13.0
–9.0
–5.7
–4.0
–3.3
–2.7
–2.2
S22
Mag
0.016
0.023
0.031
0.041
0.059
0.089
0.124
0.175
0.223
0.353
0.517
0.633
0.686
0.733
0.773
Ang
7.3
25.8
39.1
51.7
61.7
59.9
47.2
33.0
20.9
1.7
–18.3
–38.1
–59.9
–77.2
–83.3
High-power mode1
(TA = 25 °C, VSupply = +6 v, IOUT = 72 mA, VSEL= ISEL = GND, Zin = ZOUT = 50)
Freq.
(MHz)
500
1000
1500
2000
2500
3000
3500
4000
5000
6000
7000
8000
9000
10000
S12
dB
–24.9
–23.5
–23.6
–25.2
–27.2
–24.2
–19.7
–17.3
–14.5
–10.7
–6.8
–5.0
–4.0
–3.0
Mag
0.057
0.067
0.066
0.055
0.044
0.062
0.103
0.136
0.189
0.291
0.457
0.565
0.630
0.705
S12
Ang
dB
–34.8
–66.5
–93.5
–118.9
–124.3
–109.3
–118.1
–141.5
158.6
91.8
40.9
8.7
–17.5
–37.6
–22.1
–22.2
–22.2
–22.4
–22.5
–22.7
–22.9
–23.2
–24.4
–25.8
–27.6
–28.9
–29.5
–30.3
Mag
0.079
0.077
0.078
0.076
0.075
0.073
0.072
0.069
0.060
0.051
0.042
0.036
0.034
0.031
S21
Ang
–6.1
–12.5
–18.3
–25.4
–30.9
–37.0
–42.8
–50.0
–63.7
–76.6
–83.7
–87.5
–90.0
–94.6
dB
20.0
20.1
20.2
20.4
20.7
20.9
21.1
21.2
21.5
21.1
19.6
17.4
14.6
11.3
Mag
10.025
10.090
10.245
10.506
10.809
11.147
11.344
11.517
11.865
11.395
9.551
7.454
5.339
3.674
S22
Ang
169.9
159.9
149.6
139.2
128.0
115.5
102.6
89.7
61.0
27.2
–5.8
–35.8
–62.9
–82.4
dB
–28.2
–28.0
–28.2
–27.4
–25.2
–21.5
–18.1
–15.8
–11.4
–7.1
–4.5
–3.3
–2.6
–2.1
1. Data obtained from device mounted in RF text fixture. Magnitudes and Phase have been corrected for fixture loss and phase delay.
Mag
0.039
0.040
0.039
0.043
0.055
0.084
0.125
0.163
0.268
0.443
0.599
0.680
0.740
0.785
Ang
6.2
5.8
15.3
35.1
45.4
39.8
27.8
18.4
4.9
–11.0
–30.3
–54.1
–73.2
–80.6
09 | Keysight | 1GC1-4023 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier - Data Sheet
Supplemental Data1
24
22
-55C
22
-55C
20
-25C
20
-25C
18
25C
18
25C
16
55C
16
55C
14
85C
14
85C
12
125C
12
125C
Gain (dB)
Gain (dB)
24
10
10
0
1000
2000
3000
4000
5000
6000
7000
0
Input frequency (MHz)
2000
3000
4000
5000
6000
7000
Input frequency (MHz)
Figure 8. Typical small signal gain vs. frequency and temperature
in low-noise mode
24
Figure 9. Typical small signal gain vs. frequency and temperature
in high-power mode
24
-55C-P-1
-25C-P-1
20
25C-P-1
55C-P-1
16
85C-P-1
125C-P-1
12
-55C-Psat
-25C-Psat
8
25C-Psat
4
55C-Psat
-55C-P-1
-25C-P-1
20
Output power (dBm)
Output power (dBm)
1000
25C-P-1
16
55C-P-1
12
125C-P-1
85C-P-1
-55C-Psat
-25C-Psat
8
25C-Psat
4
55C-Psat
85C-Psat
85C-Psat
0
0
125C-Psat
0
1000 2000 3000 4000 5000 6000
125C-Psat
0
7000
7000
Input frequency (MHz)
Input frequency (MHz)
Figure 10. Typical output power P–1dB and Psat vs. frequency
and temperature in low-noise mode
Figure 11. Typical output power P–1dB and Psat vs. frequency and
temperature in high-power mode
80
80
70
70
2nd @ 25C
60
3rd @ 25C
50
2nd @ -55C
3rd @ -55C
40
2nd @ 125C
30
3rd @ 125C
20
10
0
1000
2000 3000 4000
5000 6000 7000
Fundamental frequency (MHz)
Figure 12. Typical 2nd and 3rd harmonics vs. frequency and
temperature in low-noise mode2
Harmonic Distortion (dBc)
Harmonic distortion (dBc)
1000 2000 3000 4000 5000 6000
2nd @ 25C
60
3rd @ 25C
50
2nd @ -55C
3rd @ -55C
40
2nd @ 125C
30
3rd @ 125C
20
10
0
1000 2000 3000 4000
5000 6000 7000
Fundamental frequency (MHz)
Figure 13. Typical 2nd and 3rd harmonics vs. frequency and
temperature in high-power mode2
1. Data measured on device mounted in RF test fixture. Data has been corrected for fixture insertion loss.
2. Measured at P OUT = +5 dBm
10 | Keysight | 1GC1-4023 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier - Data Sheet
Supplemental Data1 (continued)
25
25
150 MHz
15
500 MHz
1 GHz
20
2 GHz
15
Gain (dB)
Gain (dB)
20
3 GHz
4 GHz
10
5 GHz
6 GHz
5
0
-9
-6
-3
0
3
6
9
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
10
5
7 GHz
-15 -12
150 MHz
500 MHz
1 GHz
0
12
-15 -12
-9
Input power (dBm)
Figure 14. Typical gain vs. input power at TA= 25 °C
-3
0
3
6
9
12
Figure 15. Typical gain vs. input power at TA= 25 °C
65
45
Low power mode
Low power mode
High power mode
60
High power mode
40
55
35
TOI (dBm)
SHI (dBm)
-6
Input power (dBm)
50
45
40
30
25
20
35
0
1000
2000
3000
4000
15
5000
0
Frequency (MHz)
1000
2000
3000
Frequency (MHz)
Figure 17. Typical TOI vs. frequency at TA= 25 °C,
P OUT = 0 dBm and 200 KHz spacing
Figure 16. Typical SHI vs. 2nd harmonic frequency at
TA= 25 °C and P OUT = 0 dBm
4
3.5
NF (dB)
3
2.5
2
1.5
Low power mode
High power mode
1
0
1000
2000
3000
4000
Frequency (MHz)
5000
6000
Figure 18. Typical noise figure vs. frequency at
TA= 25 °C and P OUT 0 dBm.
1. Data measured on device mounted in RF test fixture. Data has been corrected for fixture insertion loss.
7000
4000
5000
11 | Keysight | 1GC1-4023 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier - Data Sheet
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