SILICON RFIC LOW
CURRENT AMPLIFIER UPC8179TB
FOR MOBILE COMMUNICATIONS
D
FEATURES
POWER GAIN vs. FREQUENCY
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
+20
VCC = 3.0 V
• SUPPLY VOLTAGE:
VCC = 2.4 to 3.3 V
2.4 GHz
TA = -40°C
TA = +25°C
UE
+10
TA = +85°C
• HIGH EFFICIENCY:
PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz
PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz
PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz
0
–10
–20
• POWER GAIN:
GP = 13.5 dB TYP at f = 1.0 GHz
GP = 15.5 dB TYP at f = 1.9 GHz
GP = 15.5 dB TYP at f = 2.4 GHz
1.0 GHz
–30
IN
1.9 GHz
–40
• EXCELLENT ISOLATION:
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
0.1
0.3
1.0
3.0
Output match for best performance
at each frequency
DESCRIPTION
NT
• LOW CURRENT CONSUMPTION:
ICC = 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY:
ICC = 4.0 mA TYP AT VCC = 3.0 V
• LIGHT WEIGHT:
7 mg (standard Value)
APPLICATIOIN
SC
O
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
ELECTRICAL CHARACTERISTICS,
NEC's UPC8179TB is a silicon monolithic integrated circuit
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50Ω wideband matched IC.
This low current amplifier uns on 3.0 V. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
and reliability.
(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UPC8179TB
S06
UNITS
MIN
TYP
MAX
ICC
Circuit Current (no input signal)
mA
2.9
4.0
5.4
GP
Power Gain,
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
11.0
13.0
13.0
13.5
15.5
15.5
15.5
17.5
17.5
Isolation,
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
39.0
37.0
36.0
44.0
42.0
41.0
–
–
–
Output Power at
1 dB gain
compression,
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
-0.5
-2.0
-3.0
3.0
1.5
1.0
–
–
–
Noise Figure,
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
–
–
–
5.0
5.0
5.0
6.5
6.5
6.5
Input Return Loss,
(without matching
circuit)
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
4.0
4.0
6.0
7.0
7.0
9.0
–
–
–
DI
ISOL
P1dB
NF
RLIN
California Eastern Laboratories
UPC8179TB
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
RECOMMENDED
OPERATING CONDITIONS
PARAMETERS
UNITS
RATINGS
VCC
Supply Voltage, Pins 4 & 6
V
3.6
SYMBOLS
ICC
Circuit Current
mA
15
VCC
mW
270
TA
°C
-40 to +85
°C
-55 to +150
dBm
+5
PD
Power
TOP
Operating Temperature
TSTG
Storage Temperature
PIN
Input Power
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85°C).
PIN FUNCTIONS
Symbol
1
INPUT
Pin Voltage
2.7
3.0
3.3
Operating Ambient
Temperature
°C
-40
+25
+85
Description
Internal Equivalent Circuit
Signal Input Pin. A internal
matching circuit, configured with
resistors, enable 50 W connection
over a wide band. This pin must
be coupled to signal source with
capacitor for DC cut.
1.09 V
GND
through external inductor
4
OUTPUT
Same as VCC voltage
6
4
Ground pin. This pin should be
connected to the system ground with
minimum inductance. Ground pattern
on the board should be formed as
wide as possible. All the ground pins
must be connected together with
wide ground pattern to decrease
impedance difference.
NT
2
3
5
VCC
2
Signal output pin. This pin is
designed as collector output. Due
to the high impedance output, this
pin should be externally equipped
with matching LC matching circuit
to next stage. For L, a size 1005
chip inductor can be chosen.
SC
O
6
TYP MAX
V
IN
Pin No.
UNITS MIN
UE
Dissipation2
PARAMETERS
Supply Voltage
D
SYMBOLS
1
3
5
Power supply pin. This pin should
be externally equipped with bypass
capacitor to minimize its impedance.
2.4 to 3.3
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C)
CIRCUIT CURRENT vs. TEMPERATURE
CIRCUIT CURRENT vs. VOLTAGE
5
5
3
2
1
0
No signals
Vcc = 3.0 V
Circuit Current, ICC (mA)
4
DI
Circuit Current, ICC (mA)
No signals
4
3
2
1
0
0
1
2
Voltage, VCC (V)
3
4
–60
–40
–20
0
+20
+40
+60
Temperature, TA (°C)
+80
+100
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C)
1.0 GHz Output Port Matching
ISOLATION vs. FREQUENCY
GAIN vs. FREQUENCY
– 10
+20
VCC = 3.0 V
TA = –40 ºC
–20
Isolation, ISOL (dB)
0
–10
–30
TA = –40 ºC
TA = +25ºC
–40
UE
TA = +25 ºC
TA = +85ºC
–20
–50
–60
–30
TA = +85 ºC
–70
–40
0.1
0.3
0.1
3.0
1.0
0.3
INPUT RETURN LOSS vs. FREQUENCY
IN
Frequency, f (GHz)
3.0
OUTPUT RETURN LOSS vs. FREQUENCY
+5
0
Vcc = 3.0 V
–10
TA = +25 ºC
TA = –40 ºC
–15
–20
SC
O
–25
0.1
0.3
1.0
TA = –40ºC
–5
TA = +25ºC
–10
TA = +85ºC
–15
–20
–25
0.1
3.0
0.3
TA = –40ºC
0
TA = +85ºC
–5
TA = +25ºC
DI
–10
–15
–20
–25
–30
–40
–35
–30
–25
–20
–15
–10
–5
Input Power, PIN (dBm)
0
+5
0
Thirf Order Intermodulation Distortion,
IM3 (dBc)
+5
3.0
THIRD ORDER INTERMODULATION DISTORTION vs.
OUTPUT POWER OF EACH TONE
+10
VCC = 3.0 V
1.0
Frequency, f (GHz)
Frequency, f (GHz)
OUTPUT POWER vs. INPUT POWER
VCC = 3.0 V
0
NT
TA = +85 ºC
–5
–30
Output Power, POUT (dBm)
1.0
Frequency, f (GHz)
Output Return Loss, RLOUT (dBm)
Gain, GP (dB)
+10
Input Return Loss, RLIN (dB)
D
Vcc = 3.0 V
f1 = 1 000 MHz
f2 = 1 001 MHz
-10
-20
Vcc = 2.4 V
-30
Vcc = 3.0 V
-40
Vcc = 3.3 V
-50
-60
–20
–15
–10
–5
0
+5
Output Power of Each Tone, POUT (dBm)
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C)
1.0 GHz Output Port Matching
NOISE FIGURE vs. VOLTAGE
D
6.0
TA = +85 ºC
5.0
UE
Noise Figure, NF (dB)
5.5
TA = +25 ºC
4.5
4.0
TA = –40 ºC
3.5
3.0
2.0
2.5
3.0
3.5
IN
Voltage, VCC (V)
1.9 GHz Output Port Matching
ISOLATION vs. FREQUENCY
GAIN vs. FREQUENCY
–10
+20
Vcc = 3.0 V
Vcc = 3.0 V
TA = –40ºC
NT
–20
+10
0
TA = +85ºC
–10
–20
SC
O
–30
Isolation, ISOL (dB)
Gain, GP (dB)
TA = +25ºC
0.3
1.0
TA = –40ºC
TA = +25ºC
–40
–50
TA = +85ºC
–60
–70
–40
0.1
–30
0.1
3.0
–15
–20
–25
–30
Vcc = 3.0 V
0.1
0.3
1.0
Frequency, f (GHz)
3.0
VCC = 3.0 V
Output Return Loss, RLOUT (dBm)
TA = –40ºC
DI
Input Return Loss, RLIN (dB)
TA = +25ºC
–10
3.0
+5
0
–5
1.0
OUTPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
TA = +85ºC
0.3
Frequency, f (GHz)
Frequency, f (GHz)
0
–5
–10
TA = +85ºC
–15
TA = +25ºC
–20
TA = –40ºC
–25
0.1
0.3
1.0
Frequency, f (GHz)
3.0
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C)
1.9 GHz Output Port Matching
OUTPUT POWER vs. INPUT POWER
+10
Thirf Order Intermodulation Distortion,
IM3 (dBc)
0
TA = +25ºC
–5
–10
TA = +85ºC
–15
–20
–25
VCC = 3.0 V
–30
–40
–35
–30
–25
–20
–15
–10
–5
0
-10
-20
Vcc = 3.3 V
-30
Vcc = 3.0 V
Vcc = 2.4 V
-40
-50
-60
–20
+5
–15
–10
–5
0
+5
Output Power of Each Tone, POUT (dBm)
IN
Input Power, PIN (dBm)
NOISE FIGURE vs. VOLTAGE
5.5
TA = +85 ºC
5.0
NT
Noise Figure, NF (dB)
f1 = 1 900 MHz
f2 = 1 901 MHz
UE
Output Power, POUT (dBm)
+5
D
0
TA = –40ºC
4.5
TA = +25 ºC
4.0
3.5
SC
O
TA = –40 ºC
3.0
2.0
2.5
3.5
3.0
Voltage, VCC (V)
2.4 GHz Output Port Matching
ISOLATION vs. FREQUENCY
GAIN vs. FREQUENCY
–10
+20
VCC = 3.0 V
VCC = 3.0 V
TA = –40ºC
–20
DI
Gain, GP (dB)
TA = +25ºC
0
–10
–20
TA = +85ºC
Isolation, ISOL (dB)
+10
TA = +25ºC
–30
–40
TA = –40ºC
–50
–30
–60
–40
–70
TA = +85ºC
0.1
0.3
1.0
Frequency, f (GHz)
3.0
0.1
0.3
1.0
Frequency, f (GHz)
3.0
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C)
2.4 GHz Output Port Matching
OUTPUT RETURN LOSS vs. FREQUENCY
INPUT RETURN LOSS vs. FREQUENCY
+5
0
Output Return Loss, RLOUT (dBm)
TA = +25ºC
TA = –40ºC
–20
–25
VCC = 3.0 V
–30
0.3
1.0
–10
TA = +85ºC
–15
TA = +25ºC
–20
TA = –40ºC
0.1
3.0
0.3
1.0
3.0
Frequency, f (GHz)
IN
Frequency, f (GHz)
THIRD ORDER INTERMODULATION DISTORTION vs.
OUTPUT POWER OF EACH TONE
OUTPUT POWER vs. INPUT POWER
+10
0
VCC = 3.0 V
NT
+5
0
TA = +25ºC
–5
–10
TA = –40ºC
–15
–20
TA = +85ºC
–25
SC
O
Output Power, POUT (dBm)
–5
–25
0.1
–30
–40
–35
–30
–25
–20
–15
–10
–5
0
+5
Input Power, PIN (dBm)
NOISE FIGURE vs. VOLTAGE
5.5
TA = +85ºC
5.0
DI
Noise Figure, NF (dB)
0
UE
–15
4.5
TA = +25
4.0
TA = –40ºC
3.5
3.0
2.0
2.5
Thirf Order Intermodulation Distortion,
IM3 (dBc )
Input Return Loss, RLIN (dB)
–10
D
VCC = 3.0 V
TA = +85ºC
–5
3.0
Voltage, VCC (V)
3.5
f1 = 2 400 MHz
f2 = 2 401 MHz
-10
Vcc = 2.4 V
-20
-30
Vcc = 3.0 V
-40
Vcc = 3.3 V
-50
-60
–20
–15
–10
–5
0
+5
Output Power of Each Tone, POUT (dBm)
UPC8179TB
D
TYPICAL SCATTERING PARAMETERS (TA = 25˚C)
0.1 G
1.0 G
0.1 G
2.0 G
1.0 G
2.0 G
UE
3.0 G
3.0 G
Coordinates in Ohms
Frequency in GHz
S11
VCC = VOUT = 3.0 V, ICC = 4.0 mA
VCC = VOUT = 3.0 V, ICC = 4.0 mA
S11
S21
S12
MAG
ANG
MAG
ANG
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
0.824
0.692
0.594
0.533
0.499
0.474
0.460
0.450
0.441
0.438
0.431
0.426
0.427
0.417
0.413
0.408
0.398
0.387
0.380
0.366
0.352
0.341
0.330
0.320
0.304
0.296
0.285
0.272
0.267
0.256
0.248
-17.1
-25.9
-29.2
-30.7
-31.1
-32.0
-32.7
-34.0
-35.6
-37.7
-39.8
-42.0
-44.8
-48.1
-50.6
-54.6
-57.6
-61.6
-64.9
-69.1
-72.1
-75.6
-79.4
-82.4
-85.6
-88.2
-91.7
-94.3
-96.9
-99.5
-101.9
1.181
1.181
1.247
1.370
1.514
1.677
1.885
2.050
2.237
2.460
2.627
2.772
2.965
3.123
3.199
3.351
3.345
3.103
3.361
3.375
3.350
3.304
3.347
3.325
3.275
3.284
3.283
3.224
3.333
3.251
3.381
-177.7
-172.4
-167.4
-164.1
-162.4
-162.9
-163.8
-166.3
-169.2
-173.1
-177.3
178.4
173.2
168.0
161.8
156.8
151.2
145.5
140.9
136.3
132.3
127.9
124.8
121.2
117.3
113.7
111.0
106.5
104.3
101.1
96.0
SC
O
DI
S22
MAG
ANG
MAG
ANG
0.002
0.003
0.004
0.005
0.005
0.006
0.006
0.006
0.005
0.007
0.007
0.005
0.005
0.004
0.006
0.005
0.003
0.005
0.005
0.004
0.003
0.003
0.006
0.006
0.006
0.004
0.005
0.005
0.008
0.009
0.008
108.8
64.7
51.3
55.8
60.6
46.6
42.9
45.9
42.1
34.0
46.9
27.7
40.2
24.4
45.5
44.6
42.4
44.6
59.5
45.4
58.3
73.9
81.1
98.3
100.5
114.6
104.8
114.1
127.8
126.3
134.1
0.996
0.986
0.980
0.965
0.958
0.950
0.941
0.935
0.929
0.918
0.914
0.903
0.895
0.891
0.884
0.877
0.867
0.877
0.859
0.852
0.846
0.847
0.839
0.839
0.838
0.834
0.830
0.831
0.837
0.831
0.833
-2.4
-4.0
-5.8
-7.5
-8.6
-10.1
-11.2
-12.4
-13.8
-14.9
-16.0
-17.0
-18.3
-19.5
-20.4
-21.1
-22.1
-21.1
-24.4
-25.1
-25.9
-26.4
-27.4
-28.2
-29.1
-29.7
-30.6
-31.4
-32.0
-33.4
-34.0
NT
GHz
IN
FREQUENCY
S22
UPC8179TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
COMPONENT LIST
1.0 GHz Output Port Matching
1000 pF
0.75 pF
10 pF
12 nH
D
AMP-4
C1
C2
C3
L1
C2
L1
UE
C1
Mounting Direction
C3
IN
C3C
OUT
IN
Top View
AMP-4
COMPONENT LIST
OUT
L2
IN
C2
C3
C1
C6
C4
C5
AMP-4
SC
O
NT
1.9GHz Output Port Matching
1000 pF
0.75 pF
10 pF
3.3 nH
L1
C1, C3, C5, C6
C2
C4
L1
COMPONENT LIST
DI
OUT
L2
IN
L1
C1, C2, C4, C5
C3
L1
L2
2.4 GHz Output Port Matching
1000 pF
10 pF
1.8 nH
2.7 nH
C1
C3
C4
C5
C2
UPC8179TB
TEST CIRCUITS
<1> f = 1.0 GHz
C3
D
Vcc
Output port matching circuit
L1
50 Ω
C1
UE
6
C2
4
1
IN
50 Ω
OUT
IN
2, 3, 5
<2> f = 1.9 GHz
Vcc
C4
C6
NT
C5
6
50 Ω
C1
4
1
SC
O
IN
Output port matching circuit
L1
C2
C3 50 Ω
OUT
2, 3, 5
DI
<3> f = 2.4 GHz
50 Ω
IN
C1
Vcc
C3
C5
C4
Output port matching circuit
L1
6
4
1
L2
2, 3, 5
50 Ω
OUT
C2
UPC8179TB
SYSTEM APPLICATION EXAMPLE
Low Noise Tr.
I
Q
DEMOD
.. N
PLL
PLL
SW
I
0°
φ
TX
90°
UE
PA
D
RX
Q
LEAD CONNECTIONS
OUTLINE DIMENSIONS (Units in mm)
2.1±0.1
3
2.0±0.2
0.65 3
4
0.65 2
5
0.2 +0.1
-0
1.3
1
IN
1.25±0.1
2
1
0.7
0 ~0.1
(Bottom View)
4
4
3
5
5
2
6
6
1
1. INPUT
2. GND
3. GND
4. OUTPUT
5. GND
6. VCC
NT
6
DOT ON
BOTTOM SIDE
0.9 ± 0.1
C3C
(Top View)
PACKAGE OUTLINE S06
+0.1
0.15 -0.5
RECOMMENDED P.C.B. LAYOUT (Units in mm)
SC
O
ORDERING INFORMATION
Note:
All dimensions are typical unless otherwise specified.
PART NUMBER
UPC8179TB-E3-A
0.4
QTY
3K/Reel
Note:
DI
1.9
0.8
Embossed tape, 8 mm wide. Pins 1, 2, 3 are in tape pull-out
direction.
0.65 0.65
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 919-2500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
05/03/2006
5-10
UE
D
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
IN
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
NT
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
< 1000 PPM
SC
O
Lead (Pb)
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
DI
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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