OpenStax-CNX module: m30821
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Tutorial 3 of
AnalogElectronicsLecture3.
∗
Bijay_Kumar Sharma
This work is produced by OpenStax-CNX and licensed under the
†
Creative Commons Attribution License 3.0
Abstract
This gives the data sheet of Diode and problems on Diode circuits.
Tutorial 3 of AnalogElectronicsLecture3.
DATA SHEET OF DIFFUSED SILICON PLANAR [BAY 73]
A) BVA =125 V (MIN)@100µA Absolute Maximum Ratings
B) Storage temperature ratings -65ºC to +200ºC
Maximum Junction Operating temperature 175ºC
Lead temperature +260ºC
A) Power dissipation
Maximum Total Power Dissipation at 25ºC Ambient= 500mW
Linear power derating factor(from 25ºC)=3.33mW/ºC
A) Maximum Voltage and current
WIV working inverse voltage BAY73 = 100V
Io Average Rectied Current= 200 mA
IF Continuous Forward Current= 500 mA
if Peak Repititive forward current = 600 mA
if (surge) Peak Forward surge Current
Pulse width= 1 sec 1A
Pulse Width= 1µsec 4A
Electrical Characteristics(25ºC Ambient)
Symbol
Characteristic
Bay 73
MIN
Units
Test Condition
MAX
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∗ Version
1.1: Jul 29, 2009 3:12 am -0500
† http://creativecommons.org/licenses/by/3.0/
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Forward Voltage
Reverse
rent
Cur-
Breakdown
Voltage
C
0.850.60
Capacitance
1.000.65
VV
0.50
nA
125
V
8
pF
=0V,f=1MHz
Reverse Recovery Time
3
Table 1
Data Sheet Of Zener Diode
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µsec
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Figure 1
Figure 1. I-V characteristics of Zener Diode.
We have Zener break down below 4V and Avalanche Breakdown above 6V and between 4V and 6V we
have mixed breakdown that is partly Zener and remaining Avalanche.
Zener Breakdown has negative temperature coecient and Avalanche Breakdown has positive temperature coecient. Hence at around 5V Breakdown we have almost zero temp coecient. Hence 5V Breakdown
Zener Diode can be used as an Ideal Reference Voltage Source or as a Standard Voltage Source.
Electrical Characteristics Of Zener Diode(T ambient =25ºC)
VZ (V)
IZT (mA)
ZZT (Ω)at
IZT (mA)
ZZK (Ω) IR (µA)at
atIZK (mA) VR (V)
VR (V)
IZM (mA)
Temperature
Coecient
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12.5
4
8.5
700 at 0.25
10
7.2
Table 2
Figure 2
Figure 2. Temperature Coecient of Breakdown Voltages.
Current Controlled attenuator
Figure 3
Figure 3. Current controlled attenuator.
Incremental circuit is :
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0.072
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Figure 4
C acts as a short circuit.
Diode is replaced by
Figure 5
Figure 6
Figure 4. Incremental Model of Current Controlled Attenuator.
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Figure 7
Figure 8
Figure 9
we have:R1 =1kΩ
Is =10-15 A
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Diode Attenuator Characteristics
I
rd
vo
1µA
25kΩ
0.96 vs
10µA
2.5kΩ
0.71 vs
100µA
250Ω
0.20 vs
1mA
25Ω
0.024 vs
Table 3
TUTORIAL (3)
(1)
DIODE-Q POINT AND INCREMENTAL PARAMETERS AND SWITCHING PARAMETERS
Figure 10
Figure 5.A diode circuit of problem 1.
Given ideality factor η =1 and Is =10-12 A
Determine IDQ , VDQ by graphical method or iteration method.
[Ans: VDQ =0.535V ,IDQ =0864mA]
(2)
Figure 11
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Figure 6. A diode circuit of problem 2.
Given η =1 and Is =10-13 A
Determine IDQ , VDQ by graphical method or iteration method.
[Ans: VDQ =0.619V , IDQ =2.19mA]
(3)A diode circuit is given below:
Figure 12
Figure 7. A diode circuit with a signal source in Problem 3.
Figure 13
Figure 14
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Figure 8. Incremental model of the diode circuit under signal condition.
vs =[0.1Sin(ω t)]V
Let VDQ =0.6V
Determine IDQ , VDQ , rd and vo = id RD. [vo =id RD =0.0995 sin(ω t) (V)]
{Ans IDQ =0.88 mA, VDQ =0.6V, rd =29.5Ω}
(4)
) Calculate the values of the incremental resistance rd for a diode with Is (reverse
saturation current)= 1fA operating at ID=50 µA,2mA,3A.
Ans: We know that
Figure 15
where
Figure 16
Thus we get rd = 500Ω, 12.5Ω, 8.33mΩ
(5) What is the small signal diode resistance r d at room temperature and at 100ºC for
operating current I D =1.5 mA ?
Ans: We know that:
Figure 17
Thus we get
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Figure 18
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