Power Semiconductor – State of the
Art and Development Trends
By
Leo Lorenz
Infineon Technologies
Munich
E-mail: leo.lorenz@infineon.com
Focus Application: Power Devices for Automotive & Industry
Outline:
„ Indroduction
„ Power Devices & SMART Power IC´s for Automotive Application
- SMART Power IC´s
- Discrete Power Devices (Power MOSFET, SiC, IGBT´s)
„ Development Trends and Challenges
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 1
Power Semiconductor – State of the Art and
Development Trends
Key Message: The most inexpensive and environmental friendly
energy is:
The Energy We Do Not Consume Nor Waste
Driving Technology:
„ Power Devices & SMART Power IC´s
„ System Integration
„ Precise Control of Energy Flow
„ Demand oriented operation of load
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 2
Very Basic Structure of any Power Electronic System
(Inverter, Converter)
Load
Source
Nin
AC: V, f, j, 1-Phase, 3Phase
DC: V, +/-
Nout
AC: V, f, j, 1-Phase, 3Phase
DC: V, +/-
Desired
value
2010-01-14
Control
Actual value
Copyright © Infineon Technologies 2010. All rights reserved.
Page 3
Description of Systems
Sense – Process – Actuate in Closed Feedback Loop
Solution
Components
eP WL
„ Components of System
LWS
ACROPOLIS
Sensors
Challenges
Q&A
Microcontrolle
r
Power
Devices
2010-01-14
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Page 4
Energy Consumption and Control of Energyflow
through Power Electronics
12 billion kilowatts every hour of day of every year
20
Total Energy
16
12
30% savings with
improved power
electronics
(components & systems)
Electrical Energy
8
4
0
1800
1900
2000
2100
20 40 60 80
20 40 60 80
20 40 60 80
Year
60% Æ 20%
Total Energy
40%
Electrical
Energy
Internet
10%
Motor
55%
1997: 40%
2010: 80%
Lighting
21%
Other
14%
Power Electronics Control Unit
2010-01-14
Source: CPES/EPRI
Copyright © Infineon Technologies 2010. All rights reserved.
Page 5
Major Consumers of Electrical Energy – Savings Potential
Today: 40% out of the overall energy consumption is electrical energy
Consumers electrical energy (ww)
Energy Split: ww
Power supply:
- stand-by,
- active, …
- Computing
EC-Ballast
Daylight dimming
HID, LED, …
I&C
Others
24%
Lighting
21%
Factory autom.
Process engineering,
Heavy industry,
Light industry, …
Transportation:
Train, Bus, Car, …
Home appliance:
Freedge, WM,
HVAC
Motor control
55%
Energy saving
potential
- stand-by
- active
>90%
>>1%
80+ / 90+
>>1%
Electronic control
>25%
Variable
Speed
Drive (VSD)
>30%
VSD +
Reverse Energy
>25%
VSD
>40%
Source: ZVEI, Siemens, CEMEP, CPES, EPA, NRDC, IFX
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Key
technology
CoolMOS, SiC
Smart control IC
CoolSET
Low cost µC
CoolMOS
Smart ballast IC
Low cost µC
IGBT
Modules
CiPOS
EMCON
CoolMOS
CT
Optimized µC
8 bit / 16 bit / 32 bit
confidentia
l
Page 6
Motor drives is about RPM control enabling
increase in overall system efficiency
AC 240-690 V
Inverter based
motor
Energy grid
Inverter &
Power Electronic
Inverter output 3~
„ The inverter supplies the drive with exactly the
power it needs, minimizing energy losses
„ Energy saving of ~ 25-40% is possible
Applications
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 7
Motor Drives: Basic Principle
Diode Rectifier
IGBT Inverter
DC-Link
AC-Input
Mains
3 x 400V /50Hz
L1
AC-Output
Motor
+
U
V
W
L2
L3
U[V]
U[V]
U[V]
U[V]
AC voltage
AC-voltage
Fixed frequency 50Hz
variable frequency 0-300Hz
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 8
History of Power Semiconductors
voltage range;
current range
IGBT
600V - 6500V;
1A - >1000A
Cool-MOS
400V - 1000V;
1A - 50A
MOS-transistor
small power
1950
1960
GCT
> 3000V;
> 500A
GTO
> 3000V;
> 500A
bipolar transistor
<1400V;
1A - 300A
medium power
1970
1980
20V - 1000V;
1A - 100A
1990
thyristor
600V - 8000V;
10A - >1000A
diode
600V - 8000V;
1A - >1000A
2000
year
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 9
Application for Power Semiconductor Components
Capacity of the converter system
HVDC
Thyristor
Ultra high power
1 GW
Reative compensators AC-AC interties
100 MW
High current supplies large drives
10 MW
Year 2005
the higher
Tendency
the converter capacity,
the lower
the switching frequency
GTO
Heavy locomotives
IGBT
1 MW
High power
Large solar power plants trams, busses
100 kW
Medium
power
Electric cars
10 kW
FET
1 kW
Low power
Switched mode power supplies
100 W
10 Hz
IFX 2136 1099/MCD
2010-01-14
Source: IPEC 2000
100 Hz 1 kHz 10 kHz 100 kHz
Semiconductor switching frequency
Copyright © Infineon Technologies 2010. All rights reserved.
Page 10
Automotive Applications
SMART Power Bridges 1A_< I_< 250A
Power
window
Wiper
New fields:
Power seat
Sun roof
Gearbox /
Clutch
Cam shaft
replacement,
42V/12V DC/DC
converter
Starter –
Generator
(Ta >150°C
Engine
management
Brake by wire
(Ta >150°C)
Climate control
Brakes
Starter / Fan
Power steering
Headlight
beam control
2010-01-14
Door
lock
Mirror
control
Copyright © Infineon Technologies 2010. All rights reserved.
Steer by wire,
intelligent power
management
Page 11
Global CO2 Targets
gCO2/km
200
EU Proposes steep fines to cut
car CO2 from 2012
Automotive News Dec. 20th 2007
Cars: 120gCO2/km by 2012
+10 g coming from biofuels …
OEM
Actual
190
180
170
161 gCO2/km
160
OEM
Voluntary
Target
150
140
130
130 gCO2/km
120 gCO2/km
120
EU Proposal
(Dec, 2007)
110
100
Alternative
Proposal
incl. BioFuel
(Jan, 2008)
95 gCO2/km
20
20
20
18
20
16
20
14
20
12
20
10
20
08
20
06
20
04
20
02
20
00
19
98
19
96
19
94
90
It's the law: 35 mpg CAFE
Automotive News Dec. 19th 2007
Cars: 35 mpg by 2020
Conversion table for regular gasoline engine
g CO2/km
155
140
130
120
110
100
90
l / 100km
6.72
6.08
5.65
5.21
4.78
4.34
3.91
35.00
38.69
41.66
45.13
49.24
54.16
60.18
MPG
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 12
System Architecture of Modern Cars
A Complex Network of Interacting Sub-Systems
Solution
Components
eP WL
LWS
ACROPOLIS
LIN-systems connected via CAN
>9km cables with >100kg for > 70 ECUs
Æ How to manage this complexity at low cost?
Challenges
Q&A
2010-01-14
© Infineon Technologies 2010. All rights reserved.
Source: C. Bracklo, 1st IntlCopyright
LIN Conf.,
Sep02
Page 13
Light Control Module : Block diagram
Park Indicator High
Low
Fog
BTS443
BTS443
16mΩ
16mΩ
Interior (dim)
Relais
Fog
Low
BTS443 BTS134 TLE 6225 BTS443
16mΩ
BTS724
16mΩ
16mΩ
16mΩ
High
BTS443
BTS443
16mΩ
16mΩ
BTS724
C164CI
4x90mΩ
Indicator Park
4x90mΩ
BTS724
BTS443
BTS716
TLE 4268
BTS724
4x90mΩ
16mΩ
4x140mΩ
5V LDO
4x90mΩ
Indicator
Indicator
Reverse Tail Indicator Brake
Control: 24 lamps
Switched Power:650W
Dissipated Power: 7W
2010-01-14
Spare 5A Foot well
Fog
Vbat
License Plate Brake Indicator Tail
TLE 6258
LIN
CHMSL (LED)
TLE 6252
CAN
Copyright © Infineon Technologies 2010. All rights reserved.
Reverse
To rest of car
To rest of car
Page 14
Block Diagram of a
Single-Channel Smart
Ｈｉｇｈ
Ｓｉｄｅ
Switch
4
+ Vbb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
VLogic
Voltage
sensor
Level shifter
Limit for
unclamped
ind. loads
Rectifier
3 IN
ESD
1
OUT 6, 7
Charge pump
IL
Current
Sense
Output
Voltage
detection
Logic
ST
Load
RO
Short circuit
Temperature
detection
sensor
5 IS
I IS
GND
RIS
GND
®
PROFET
Load GND
2
Signal GND
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 15
Smart Power Semiconductors significantly contributed
to the Automotive Light Module Evolution
“old BMW“
confidential
5 / 7 series new 3 series
Body Control Module Evolution – Example from BMW
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 16
Semiconductor Solutions enables improved Vehicle
Performance and Fuel Consumption
Average fuel consumption of European cars
Horse power
Average Fuel
consumption
8 bit
16 bit
32 bit
Source: VDA
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 17
HVAC Fan
Linear controlled
PWM controlled
Linear controlled MOSFETs
is used as variable resistor
in series with DC-brush
motor
DC-brush motor with half bridge
for PWM (8 bit µC / half-bridge /
Π-Filter)
Source : Continental
„ Main benefit
Reduced power losses in ECU
„ Feasibility
available technology,
complexity: low
„ CO2 Benefits:
Reduced power losses
Estimated additional costs
Reduced fuel consumption
CO2-reduction
2010-01-14
~
~
~
~
80W
10€
0.08l / 100km
1.9 g/km
Copyright © Infineon Technologies 2010. All rights reserved.
s
es
l
r
t e km
f
f a 00 s
f
o .0 ar
s
y n 8 ye
a
5
P ha
t r 0.
o
Page 18
Overview of CO2-Reduction Examples
Application
CO2-reduction
Cost adder
Pay-back
PWM for bulbs
[g CO2 / km]
0.8
[€]
7
[years]
0.8
Use of LED
1.2
45
3.7
Infotainment
1.2
5
0.4
Fuel pump
1.9
20
1
HVAC Fan
1.9
10
0.5
Alternator
3.5
180
5
EPS
5.9
60
1
Water pump
7.1
55
0.8
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 19
Product Solutions
DC/AC Converter for Drive (Car)
„ Switching Frequency: 5-20kHz
HVAC
HVAC
HVAC
DC/AC
DC/AC
DC/AC
HV
Battery
E-Motor /
DC/AC Generator
DC/DC
optional
„ Max. Output
Frequency:
1kHz
DC/DC
12 V
Battery
Load
Load
Load
Load
„ Bus Voltage:
120-450V or
500-700V
„ Battery Voltage: 120-450V
„ Output Power: 10-120kW
„ Motor:
or
Six Pack Power Module with IGBT
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Permanent Magnet
Squirrel Cage
Page 20
We meet all requirements for
cost effective automotive power products
Power
System IC’s
Smart
Power IC’s
MOSFET
/IGBT
2010-01-14
Smart Power
System Integration:
ABS / AIRBAG
Powertrain
Multi-Channel Switches
Bridges
Driver-IC‘s
PROFET
Voltage Regulators
fully protected
CCAN/LIN Transceiver
high-side-Switch DC/DC Converter
Integrated charge
pump
HITFET
Overload protection
fully protected
Current limitation
low-side-Switch
Short-circuit
Overload protection protection
TEMPFET Current limitation
Overvoltage
protected
Short-circuit protection
low-side-Switch Overvoltage protectionprotection
Open load detection Open load detection
Overload
Diagnostic feedback
Thermal shutdown
protection
Multi-Channel
Thermal shutdown
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Page 21
Switching Application
+ Vbb
+ Vbb
Load
I
ON: +UGS
LS
UL = Ubb - UTrans
D
RDS(ON)
UTrans = RDS*I
G
S
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 22
HITFET® - typical circuit design
Low Side (CLASSIC)
High Side (Optional)
Vbb
Optional
serial resistor
for status
purposes
IN
Internal
LOGIC
Level
Shifter
µC
IN
µC
Out
Internal
LOGIC
S
Load
Load
D
D
Out
Vbb
S
GND
GND
Since the internal driving logic of HITFET’s is supplied via the Input pin, HITFET’s
draw small currents during operation
HITFET’s can be driven in general without any additional, external circuitry since
everything is implemented inside the device
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 23
Integrated Half Bridge
– NovalithIC Concept
N
9 mΩ
typ.
Current Limitation ~70A typ. / 50A min. (low side)
2010-01-14
zP
No
C
WM harg
eP
w.
um
Ac
p
tive
Fre
ew
hee
ling
Cu
rr e
nt
S
Copyright © Infineon Technologies 2010. All rights reserved.
ens
e
Ch
ipOn
-Ch
ip
P
7 mΩ
typ.
kH
Ch
ipBy
-Ch
ip
25
Page 24
Chip-on-Chip versus Monolithic Solution
Chip-on-Chip
Power Switch
Costs
Monolithic
Power Switch
On State Resistance
Chip on Chip
Monolithic
S-Smart or SPT 4 S-Smart
with
SPT 4
S-FET
Top Chip
Control IC Base Chip
Power-Switch (4-5 Masken)
2010-01-14
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Page 25
Types of Semiconductor Switches
Source: D. Silber
2010-01-14
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Page 26
Power Devices
2010-01-14
Source: D. Silber
Copyright © Infineon Technologies 2010. All rights reserved.
Page 27
High energy-saving potentional through improvement of
efficiency and minimization of standby losses
Standby
Standby consumption
consumption
in
in the
the US
US equals
equals 44 nuclear
nuclear power
power
plants
plants
DC
DC // DC
DC
Conversion:
Conversion:
20%
20% losses
losses
AC
AC // DC
DC
Conversion:
Conversion:
30%
30% losses
losses
Battery
Battery
Standby:
Standby:
50%
50% losses
losses
Battery
Battery Charger:
Charger:
20%
20% losses
losses
heat
heat
noise
noise
220 V (AC)
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 28
Power Supply Æ High Energy Saving Potential
(Mass Production)
•
•
•
P
L
U
G
AC
85...265V
DC/DC
Controller
•
•
•
•
••
DC 2
•
•
•
PFC
Controller
•
PWM
Controller
AC/DC
Converter
PFC
Technology
CoolMOS/IGBT
SiC
Smart control IC
Energy Saving
>>1%
Power Convertion
Saving
Consumption
>> 90%
24%
Standby Mode
>> 1%
73%
Active Mode
Technology
3% Sleep
CoolSET
CoolMOS
SiC
Smart control IC
Syn. Rect.
Technology
LV-Optimos,
Smart control IC
Energy Saving
>>1%
Source: EPA, LBNL, NRDC
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 29
They typically use single transistor forward
topology with one power MOSFET & some diodes
AC 90...270V
12V
900V/
1000V
5V
3.3V
PWM
Controller
Passive PFC
stage
PWM stage
ƒ Galvanic insulation
ƒ PWM-IC
ƒ 900V/1000V
MOSFET
Three secondary side
windings on
one transformer
ƒ Diodes 12V, 5V, 3.3V
Indicates Power Semiconductor content
2010-01-14
2010-2-25
Copyright © Infineon Technologies 2010. All rights reserved.
Page 30
Let’s take the example of today’s
PC power supplies…
Conventional power supplies achieve
efficiency of around 70%-80% today
Efficiency Analysis
90 %
efficiency η [%]
80 %
70 %
60 %
Power Supply A
Power Supply B
Power Supply C
Power Supply D
Power Supply E
Power Supply F
50 %
40 %
30 %
0W
50 W
100 W
150 W
200 W
250 W
300 W
350 W
400 W
450 W
POUT [W]
2010-01-14
2010-2-25
Copyright © Infineon Technologies 2010. All rights reserved.
Page 31
PFC stage
voltage sine wave, PF=1
hard sw., 64..100 kHz
CoolMOS 500V/600 V,
199 mOhm
SiC Schottky diode 600V
CCM PFC IC
3.3V DC
12 V with synchronous
rectification
PWM stage
ƒ ensures current to follow
ƒ
ƒ
PWM LLC
Controller
12V DC
HB
Driver
PFC
Controller
ƒ
ƒ
12V DC
AC 90...270V
500V/
600V
5V DC
However, with the use of new topologies on
primary and secondary side …
ƒ Galvanic insulation
ƒ hard or resonant sw.,
100..200 kHz
ƒ CoolMOS 500V/600 V,
199 mOhm C6
ƒ PWM IC and Half
Bridge Driver
Secondary rectification
ƒ synchronous rectification for
12V
ƒ hard commutation,
100..200 kHz
ƒ OptiMOS 60..100 V,
5..10 mOhm
ƒ Buck Stages for 3.3V and 5V
Indicates Power Semiconductor content
2010-01-14
2010-2-25
Copyright © Infineon Technologies 2010. All rights reserved.
Page 32
Cell – Structure of Power MOSFET
source
-
gate
+
source
gate oxid
n
source
-
n
p
Rch
Rnsource
gate
n
p
p
CGS
source
CGDox
CGS
n
CGDsc
p
CDS
Rn-
w
n
space charge region w sc
w
-
n-
Rndrain
n
+
n
+
drain
Electron current flow
2010-01-14
drain
Copyright © Infineon Technologies 2010. All rights reserved.
Capacitances
Page 33
CoolMOSTM
The Superior Principle for High-Voltage MOSFET
30
Standard MOSFET
25
Ron x A ~ V(BR)DSS 2.4 . . . 2.6
Ron x A
[Ωmm2]
20
New horizons
for high-voltage
applications
15
10
5
CoolMOSTM
0
0
200
400
600
Breakdown voltage V(BR)DSS [V]
IT 1930 0399/MCD
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
800
1000
Page 34
Sipmos-Driving
VS
Gate
Source
C
Cox
Poly
Cox
n+
p+
SiO2
CDS
Al
n+
p+
CGD
nn+
VB
IT 1833 1199/ MCD
2010-01-14
CGS
CGD
CDS
VDS
Drain
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Page 35
Sipmos-Driving
VS
8V
Gate
Source
++
++
+++
ID
++
Poly++
+++
n+
p+
2010-01-14
Al
n+
p+
VB
IT 1833 1199/ MCD
SiO2
8V
n-
3.5V
1V
n+
VDS
Drain
Copyright © Infineon Technologies 2010. All rights reserved.
Page 36
Sipmos-Transistor
n
RON
1
RON 2
C1
1
R
ON
=
1
R
ON1
RON n
C2
+
1
R
ON2
+ ...
C1
C tot = C1 + C2 + ...
RON . i2
Ptot=PON+PC
Ptot
1/2.Ctot.VB2.f
IT 1833 1199/ MCD
2010-01-14
1 2 3 4 5 6 7 8
Adim
Copyright © Infineon Technologies 2010. All rights reserved.
Page 37
On-State: Intermediate Current
2010-01-14
Source: D. Silber
Copyright © Infineon Technologies 2010. All rights reserved.
Page 38
CoolMOSTM Generations and milestone
Performance
CoolMOSTM CP(C5)
CoolMOSTM C6
• Self-limited dv/dt,
di/dt easy use.
• Lowest Rdson and
parasitic as C3 and CP
• Enchance Diode
Commutation
• 50% parasitic C and Qg.
• Best in class : 99 mOhm in TO220,
45 mOhm in TO247
CoolMOSTM S5
CoolMOSTM C3
• Revolution in switching losses.
• Fast Diode “CFD” Series
• High current capability.
• Best-in-class: 160 mOhm in TO220
• SJ
Revolution in conduction loss
• Lowest Rdson on the market: 70mOhm
• Best-in-class: 190 mOhm in TO220
98
2010-01-14
2010/2/25
99
00
01
© Infineon04
Technologies
02Copyright03
052010. All rights
06 reserved.
07
08
09
TimePage 39
Typical end-applications for DC/DC
2010-01-14
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Page 40
Technology Evolution
Planar technologies
2010-01-14
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Page 41
Trends in Modern Power MOSFET
Development I
Trench
Planar
Source
Source
Source
Gate
Gate
RChannel
Trench
RChannel
Gate
RCh
RCh
REpi
REpi
RSub
RSub
RJFET
REpi
RSub
Drain
RJFET
Drain
Drain
Increase Channel Width per Active Area
2010-01-14
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Page 42
Buck Converter
Switching determined parasitics
package and layout inductances
at HS turn-off,
Lstray is
charged to
E = ½ I² Lstray
current
commutation
• switching speed is limited according to dI/dt = Vin/Lstray
• switching losses are defined by Lstray
2010-01-14
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Page 43
S3O8
highest power density on 11mm²
32mm²
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
11mm²
Page 44
SiC as the ultimate power device base material
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 45
SiC diodes are needed for zero reverse recovery
charge at blocking capabilty of 600V and above !
0,950
SiC SBD 2nd gen, 8A rated
0,945
Competitor, Tandem diode, 8A rated
Efficiency [%]
0,940
Competitor, pn diode, 8A rated
0,935
6
T=125°C, UAK=400V
0,930
IF=6A, di/dt=200A/μs
4
I [A]
2 0,925
0
0,920
-2
0,915
SiC Schottky diode: 6A, 600V
Si-pn Tandem diode 8A, 600V
Standard Ultrafast 5A, 600V pn-diode
-4
0,910
-6
0.05
0
0.1
50
0.15
1000.2
150
0.25
200
0.3
250
300
Time [µs]Switching frequency [kHz]
2010-01-14
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Page 46
The p-islands carrying the bipolar current make
the difference for the 2nd generation!
Schottky contact
edge termination
Schottky current
metallization
Epitaxial n- drift layer
Bipolar boost
Epitaxial n+ field stop layer
High conductivity 4H SiC substrate
Preconditions:
• Optimized emitter efficiency
• Good ohmic contact to p-wells
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 47
High Performance AC/AC Stand alone Drive System
L1
L2
L3
C1
C3
C5
High
G1
side
Driver stage a.
driver E1
Protection loop:
SC, Driver
C7
supply-UV
C2
Low Sensor loop: Low
G7 side Iphase, IFE, VDC,
G2
Inrush
side
case-temp.
strategy
driver
driver
E7
E2
Insulation point
(safety insulation)
High
G3
side
driver E3
High
G5
side
driver
E5
C4
C6
Low
G4
side
driver
E4
Low
G6
side
driver
E6
U
V
W
µC
Interface
CCU
CPU
I/O
CAN
Module
CAN
Interface
2010-01-14
µC
ADC
10 bit
OTP
User
Interface
Copyright © Infineon Technologies 2010. All rights reserved.
Page 48
Product Solutions
DC/AC Converter for Drive (Car)
„
Switching Frequency:
5-20kHz
„
Max. Output
Frequency:
„
Bus Voltage:
120-450V or
500-700V
„
Battery Voltage:
120-450V
„
Output Power:
10-120kW
„
Motor:
Permanent Magnet or
Squirrel Cage
HVAC
HVAC
HVAC
DC/AC
DC/AC
DC/AC
HV
Battery
E-Motor /
DC/AC Generator
DC/DC
optional
DC/DC
12 V
Battery
1kHz
Load
Load
Load
Load
Six Pack Power Module with IGBT
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 49
Only Power switch in one Package
IGBT and MOSFET of same Die size
=> 15A IGBT
versus
7A CoolMOS
Figure 3 :
Total power losses versus the pulse
frequency for the IGBT and FET of the
same die size.
IGBT No.1 : Fast IGBT
IC100=15A
IGBT No.2 : High Speed IGBT IC100=15A
FET No.3 : Conv.MOSFET ID100= 7A
FET No.4 : CoolMOS CP
ID100= 7A
Rectangular current IT=11A, D=0.5,
VT=400V, TC=100°C, TJ=150°C.
2010-01-14
Up to a pulse frequency of 50 kHz the IGBT is the better choice.
Copyright © Infineon Technologies 2010. All rights reserved.
Page 50
MOSFET and IGBT in on state
MOSFET
RDSon
NPT-IGBT
E
S
Cross
Al section of MOSFET
current provided by electrons
Al
SiO2
p
n
VCEsat
+
n
SiO2
G
n+
G
p
np
-
Resistor behavior : RDSon
p
C
D
Additional p layer
IGBT current is provided by electrons and holes
because of the additional p doped layer
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Bipolar behavior:
VCEsat
Page 51
IGBT-Operating Principle
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 52
Expert Presentation
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 53
Leads to reduction in losses, increased efficiency and
increased power density !
GEN 1
GEN 2
GEN 3
GEN 4
GEN 5
3.5
VCEsat(125°C) [V] @ 75A
50% Loss Reduction
4
w
o
P
e
e
D
r
ty
i
ns
3
2.5
2
1.5
1
1988
2010-01-14
1992
1996
2000
2004
Copyright © Infineon Technologies 2010. All rights reserved.
2008
2012
Page 54
Short Circuit Properties of Trench-/Field-Stop-IGBTs –
Design Aspects for a Superior Robustness
Decrease of the chip thickness
300
600V
280
260
1200V
240
Chip thickness / µm
220
1700V
200
180
160
140
120
100
80
60
40
NPT
20
FS
0
1988
2010-01-14
1990
1992
1994
1996
1998
2000
2002
2004
Copyright © Infineon Technologies 2010. All rights reserved.
2006
2008
Page 55
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 56
Typical Module
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 57
Temperature of IGBT Modules
Input Power
Power Loss
Output Power
Chip
Chip-Case
Thermal
Resistance –
Rthjc
Solder
Copper Layer
Ceramic (Al2O3 / AlN)
Copper
Solder
Base Plate
Case-Heatsink
Thermal
Resistance –
Rthch
Heatsink(Ambient)
Thermal
Resistance –
Rthha
Junction
Temp. – Tj
Chip – Case ΔTjc
Case Temp. – Tc
Thermal Grease
Case – Heatsink
ΔTch
Heatsink
Heatsink Temp. – Th
Heatsink –
Ambient ΔTha
Tj = ΔTjc + ΔTch + ΔTha + Ta
Ambient
Temp. – Ta
/ A.Volke
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 58
Fast Switching Power Transistor in
Application
4
Parasitic Components in Circuit-Topology
2
3
1
Lσ
3
1
Lσ
2
4
Dr. Lorenz
Publicis-1011-0046
2010-01-14
Earth brit
Copyright © Infineon Technologies 2010. All rights reserved.
Lσ
T
1
2
3
4
Transistor
Driving
Energy Transmission
Information Transmission
Isolation
Page 59
Packages (low/medium and HighPower IGBT)
34mm
EconoDUALTM 3
IHM B
Econo1B
Econo3B
PrimePACKTM
Easy 1B
Econo2B
EconoPACKTM+
Easy 2
Easy 1
Easy750
2010-01-14
Econo3
with PressFIT
Copyright © Infineon Technologies 2010. All rights reserved.
Discrete IGBT`s
Page 60
Summary
„ Main driver for Power Device Development are
- Reduction of Power Loss
- High Ruggeduen
- High Reliability (chip + packaging)
- Easy to Control
- High power density
- Low cost
2010-01-14
Copyright © Infineon Technologies 2010. All rights reserved.
Page 61
Challenge in Power Electronics
System Realization
„ Semiconductor specialist
„ El. system engineering
„ Mech. system
engineering
„ Packaging engineering
„ Assembly engineering
„ Test engineering
„ Quality engineering
„ System sim. specialist
2010-01-14
Driving Factors
„ Energy saving
„ Cost
„ Mobility/Comfort
„ Regulation
„ Enviromental
friendly material
R&D Topics
Integrated
Power Elektronic
System
„ Reliability (T>75°C)
„ Extended rel. datas
„ Miniaturization
„ Dynamics (Overload)
„ Imunity (EMI, dv/dt)
„ Noise
„ Communication
„ Self-learning system
System
Requirements
Copyright © Infineon Technologies 2010. All rights reserved.
System Optimized
Components
„ Passive & semiconductor
New Materials
„ Semiconductor
„ Thermal-/Isolation
Interfacing
Packaging Concepts
„ Chip-contacting technology
„ Embedded power assembly
Software
„ System simulation tools
„ Test-architectures
„ Ext. reliability datas
Mechatronics
Multi-chip assembly
„ Different technologies
„ Different temperature ratings
„ Different temperature
profiles
Page 62