PRELIMINARY
RFJS3006F
rGAN-HVTM 650V SSFET
With Ultra-Fast Freewheeling Diode
The RFJS3006F is a 30A, 650V normally-off sourced switched FET (SSFET) GaN
HEMT providing the same insulated gate ease of use as a power MOSFET or an IGBT,
but enabling much higher efficiency at much higher PWM frequencies. The SSFET uses
the bidirectional capability of the GaN HEMT to provide an ultra-fast freewheeling diode
function eliminating the need for a separate antiparallel diode.
The RFJS3006F is housed in a standard 3 lead TO247 with a UL-recognized isolated
mounting tab; separate insulating hardware is not needed. The 650V, 30A “fast version”
is optimized as a drop-in replacement or for system redesigns for higher efficiency in
medium to high power converter and inverter applications operating at PWM frequencies
from 100kHz to 500kHz.
rGaN-HV™ is an advanced high power density Gallium Nitride (GaN) semiconductor
technology from RFMD, the leader in GaN technology and manufacturing. This new high
voltage power GaN HEMT used in the SSFETs offers extremely low specific onresistance, low output capacitance and higher peak current capability. RFMD has
leveraged its knowledge in RF level GaN technology, applications experience and
manufacturing capabilities to provide the highest performance and reliability in power
switching for the power electronics industry.
Package: Isolated TO247
Features
■
Advanced High Voltage GaN
Technology
■
Normally-off Insulated Gate
■
Very low RDS(ON) Reduces
Conduction Losses
■
Ultra-Low Switching Losses
■
Internal Ultra-Fast FW Diode
■
Low-Output Capacitance
■
UL Recognized Isolation (of the
TO247 Mounting Tab)
Applications
1
Parameter
■
Solar Inverters
VDS
650V
■
ID(25°C)
30A
AC-to-DC Switching Power
Supplies
RDS(ON)
45mΩ
■
High Voltage DC-to-DC Converters
EON/EOFF
20µJ/30µJ
TRR 12ns
■
Uninterruptable Power Supplies
Freewheeling
Diode Function
■
Battery Chargers
■
Motor Drives
Drain
Gate
3
QRR 37nC
Fast Version
Source
2
Ordering Information
RFJS3006F
650V, 30A Sourced Switched Power FET –
Fast Version
RFJS3006FDK1
Fully Assembled 3kW Boost EVB
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
®
DS130809
®
RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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RFJS3006F
PRELIMINARY
Absolute Maximum Ratings
Parameter
Drain Source Operating Voltage (VDS), TC = 150°C
1
Continuous Drain Current (ID), TC = 25°C
Continuous Drain Current (ID), TC = 100°C
1
2
Pulsed Drain Current (ID, PULSE), TC = 25°C
Gate Source Voltage (VGS), Static
Power Dissipation TO247 (PTOT), TC = 25°C
Rating
Unit
650
V
30
A
20
A
100
A
-20 to 20
V
76
W
Operating and Storage Temperature (TJ, TSTG)
-55 to 150
°C
Mounting Torque TO247, M3 and M3.5 Screws
60
Ncm
Pulsed Forward Diode Current (IISM), TC = 25°C
100
A
At TJ = 25°C unless otherwise specified.
Notes:
1
Limited by TJ MAX. Maximum duty cycle D = 0.75
2
Pulse width TP limited by TJ MAX.
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Specification
Parameter
Unit
Min
Typ
Condition
Max
Thermal Characteristics
at TJ = 25°C, unless otherwise specified
1.6
°C/W
Internal, electrically isolated
Thermal Resistance,
Junction-to-Ambient (RTHJA)
TBD
°C/W
Leaded
Soldering Temperature,
Wavesoldering only Allowed at Leads (TSOLD)
260
°C
1.6mm (0.063 inches) from case for 10s.
Thermal Resistance,
Junction-to-Case (RTHJC)
Static Characteristics
at TJ = 25°C, unless otherwise specified
Drain-Source Breakdown Voltage [V(BR)DSS]
700
Gate Threshold Voltage [VGS(TH)]
1.2
Zero Gate Voltage Drain Current (IDSS)
2.2
V
VDS = VGS, ID = 5mA
500
TBD
µA
VDS = 650V, VGS = 0V, TJ = 25°C
µA
VDS = 650V, VGS = 0V, TJ = 150°C
100
nA
VGS = 20V, VDS = 0V
0.045
Ω
VGS = 10V, ID = 20A, TJ = 25°C
0.075
Ω
VGS = 10V, ID = 20A, TJ = 125°C
1.6
Ω
Frequency = 1MHz, open drain
Gate-Source Leakage Current (IGSS)
0.040
Gate Resistance (RG)
VGS = 0V, Non-repetitive
1.8
TBD
Drain-Source On-State Resistance [RDS(ON)]
V
Dynamic Characteristics
at TJ = 25°C, unless otherwise specified
Input Capacitance (CISS)
Output Capacitance (COSS)
Effective Output Capacitance, Energy Related [CO(ER)]
Effective Output Capacitance, Time Related [CO(TR)]
2
1
951
pF
119
pF
58
pF
VGS = 0V, VDS = 0V to 480V
105
pF
ID = Constant, VGS = 0V, VDS = 0V to 480V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
VGS = 0V, VDS = 100V, Frequency = 1MHz
DS130809
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFJS3006F
PRELIMINARY
Specification
Parameter
Unit
Min
Typ
Condition
Max
Switching Characteristics
at TJ = 25°C, unless otherwise specified
Turn-On Delay Time [tD(ON)]
10
ns
Rise Time (tR)
8
ns
Turn-Off Delay Time [tD(OFF)]
15
ns
Fall Time (tF)
5
ns
Turn-On Energy (EON)
20
µJ
Turn-Off Energy (EOFF)
30
µJ
Total Switching Energy (ETS)
50
µJ
Gate Charge Characteristics
VDD = 400V, VGS = 0V/+10V, ID = 20A,
RG = 1.0Ω, Resistive Load
VDD = 400V, ID = 20A, inductive load VGS = 0V/+10V,
TJ = 100°C
at TJ = 25°C, unless otherwise specified
Gate to Source Charge (QGS)
2.8
nC
Gate to Drain Charge (QGD)
3.2
nC
Gate Charge Total (QG)
15.7
nC
Reverse Diode Characteristics
VDD = 400V, ID = 20A, VGS = 0V to +10V
at TJ = 25°C, unless otherwise specified
Diode Forward Voltage (VSD)
1.6
V
VGS = 0V, IF = 20A, TJ = 25°C
Reverse Recovery Time (tRR)
12
ns
VR = 400V, IF = 20A, TJ = 25°C
Reverse Recovery Charge (QRR)
37
nC
VR = 400V, IF = 20A, dIF/dT = 1000A/µs
Peak Reverse Recovery Current (IRRM)
8
A
Notes:
1.
2.
CO(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 480V
CO(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0V to 480V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS130809
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 7
RFJS3006F
PRELIMINARY
Performance
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS130809
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
4 of 7
RFJS3006F
PRELIMINARY
Performance (continued)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS130809
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
5 of 7
RFJS3006F
PRELIMINARY
Measurement Circuits
Figure 12. Gate Charge Measurement Circuit
Figure 13. Gate Charge Waveform
Figure 14. Switching Times Measurement Circuit
Figure 15. Switching Times Waveform
Figure 16. Diode Characteristics Test Circuit
Figure 17. Diode Recovery Waveform
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS130809
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
6 of 7
RFJS3006F
PRELIMINARY
TO247 Pin Out and Package Outline (all dimensions in inches)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS130809
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
7 of 7