EECS 141 – S02 Advanced Logic Styles Digital Integrated Circuits Logic © J. Rabaey 2000 Past and Present Lecture Last Lecture Sizing of CMOS Logic Ratioed Logic Today’s Lecture Pseudo-NMOS Logic and Variants Pass-transistor Logic Digital Integrated Circuits Logic © J. Rabaey 2000 1 Ratioed Logic VDD • N transistors + Load Resistive Load • VOH = V DD RL RPN • VOL = RPN + RL F In1 In2 In3 • Assymetrical response PDN • Static power consumption • tpL = 0.69 RL CL VSS Digital Integrated Circuits © J. Rabaey 2000 Logic Pseudo-NMOS VD D A B C D F CL VOH = VDD (similar to complementary CMOS) 2 V OL kp 2 k n ( VDD – V Tn )V OL – ------------ = ------ ( V DD – VTp ) 2 2 V OL kp – V ) 1 – 1 – -----= (V (assuming that V = V = V ) DD T T Tn Tp k n SMALLER AREA & LOAD BUT STATIC POWER DISSIPATION!!! Digital Integrated Circuits Logic © J. Rabaey 2000 2 Pseudo-NMOS NAND Gate VDD GND Digital Integrated Circuits © J. Rabaey 2000 Logic Improved Loads VDD M1 Enable M2 M1 >> M2 F A B C D CL Adaptive Load Digital Integrated Circuits Logic © J. Rabaey 2000 3 Improved Loads (2) VDD VDD M1 M2 Out Out A A B B PDN1 PDN2 VSS VSS Dual Cascode Voltage Switch Logic (DCVSL) Digital Integrated Circuits © J. Rabaey 2000 Logic Example Out Out B B B A B A XOR-NXOR gate Digital Integrated Circuits Logic © J. Rabaey 2000 4 Pass-Transistor Logic Inputs B Out Switch A Out Network B B • N transistors • No static consumption Digital Integrated Circuits © J. Rabaey 2000 Logic NMOS-only switch C = 2.5 V C = 2.5V M2 A = 2.5 V A = 2.5 V B Mn B M1 CL VB does not pull up to 2.5V, but 2.5V -VTN Threshold voltage loss causes static power consumption Digital Integrated Circuits Logic © J. Rabaey 2000 5 (1) NMOS Only Logic: Level Restoring Transistor VDD VDD Level Restorer Mr B M2 X Mn A Out M1 • Advantage: Full Swing • Disadvantage: More Complex, Larger Capacitance • Other approaches: reduced threshold NMOS Digital Integrated Circuits © J. Rabaey 2000 Logic Level Restoring Transistor 5.0 with 5.0 3.0 VB 1.0 -1.00 without 3.0 with VX Vout (V) without 2 t (nsec) 1.0 4 6 -1.00 4 6 t (nsec) (a) Output node Digital Integrated Circuits 2 (b) Intermediate node X Logic © J. Rabaey 2000 6 Solution 2: Single Transistor Pass Gate with VT=0 VDD VDD 0V 2.5V Out 0V VDD 2.5V WATCH OUT FOR LEAKAGE CURRENTS Digital Integrated Circuits © J. Rabaey 2000 Logic Complimentary Pass Transistor Logic A A B B Pass-Transistor F Network (a) A A B B B Inverse Pass-Transistor Network B B A F B B A A B F=AB A B F=A+B F=AB AND/NAND Digital Integrated Circuits A F=A ⊕ΒÝ (b) A A B B F=A+B B OR/NOR Logic A F=A ⊕ΒÝ EXOR/NEXOR © J. Rabaey 2000 7 4 Input NAND in CPL Digital Integrated Circuits © J. Rabaey 2000 Logic Solution 3: Transmission Gate C A C A B B C C C = 2.5 V A = 2.5 V B CL C=0 V Digital Integrated Circuits Logic © J. Rabaey 2000 8 Resistance of Transmission Gate 30 2. 5 V Resistance, ohms Rn 20 Rp 2.5 V Rn Vout Rp 0V 10 Rn || Rp 0 0.0 1.0 2.0 Vou t, V Digital Integrated Circuits © J. Rabaey 2000 Logic Pass-Transistor Based Multiplexer S S S S VDD S A V DD M2 F S M1 B S GND In1 Digital Integrated Circuits Logic In2 © J. Rabaey 2000 9 Transmission Gate XOR B B M2 A A F M1 M3/M4 B B Digital Integrated Circuits © J. Rabaey 2000 Logic Delay in Transmission Gate Networks 2.5 2.5 V1 In C 0 2.5 Vi Vi-1 C 0 2.5 Vn-1 Vi+1 C 0 Vn C C 0 (a) Req Req V1 In Req Vi C Vn-1 Vi+1 C C Req Vn C C (b) m Req Req Req Req Req Req In C CC C C CC C (c) Digital Integrated Circuits Logic © J. Rabaey 2000 10 Delay Optimization Digital Integrated Circuits © J. Rabaey 2000 Logic Transmission Gate Full Adder P VDD A A P P A B VDD Ci A S Sum Generation Ci P B P VDD A Co Carry Generation P Ci Ci A P Setup Digital Integrated Circuits VDD Ci Logic © J. Rabaey 2000 11 Dynamic CMOS In static circuits at every point in time (except when switching) the output is connected to either GND or VDD via a low resistance path. » fan-in of N requires 2N devices Dynamic circuits rely on the temporary storage of signal values on the capacitance of high impedance nodes. » requires on N + 2 transistors Digital Integrated Circuits © J. Rabaey 2000 Logic Dynamic Gate CLK CLK Mp Mp Out In1 In2 In3 CLK CL Out A PDN C B Me CLK Me Two phase operation Precharge (CLK = 0) Evaluate (CLK = 1) Digital Integrated Circuits Logic © J. Rabaey 2000 12 Dynamic Gate CLK CLK Mp off Mp on 1 Out !((A&B)|C) Out In1 In2 In3 CLK CL A PDN C B Me CLK off Me on Two phase operation Precharge (CLK = 0) Evaluate (CLK = 1) Digital Integrated Circuits Logic © J. Rabaey 2000 Conditions on Output Once the output of a dynamic gate is discharged, it cannot be charged again until the next precharge operation. Inputs to the gate can make at most one transition during evaluation. Output can be in the high impedance state during and after evaluation (PDN off), state is stored on CL Digital Integrated Circuits Logic © J. Rabaey 2000 13 Properties of Dynamic Gates Logic function is implemented by the PDN only » number of transistors is N + 2 (versus 2N for static complementary CMOS) Full swing outputs (VOL = GND and VOH = VDD) Nonratioed - sizing of the devices is not important for proper functioning Faster switching speeds » reduced load capacitance due to lower input capacitance (Cin) » reduced load capacitance due to smaller output loading (Cout) » no Isc, so all the current provided by PDN goes into discharging CL Digital Integrated Circuits Logic © J. Rabaey 2000 Properties of Dynamic Gates, con’t Overall power dissipation usually significantly higher than static CMOS » no static current path ever exists between VDD and GND (including Psc) » no glitching » higher transition probabilities » extra load on CLK PDN starts to work as soon as the input signals exceed VTn, so set VM, VIH and VIL equal to VTn » low noise margin (NML) Needs a precharge clock Digital Integrated Circuits Logic © J. Rabaey 2000 14