NJG1108HA8
GNSS LOW NOISE AMPLIFIER
I GENERAL DESCRIPTION
The NJG1108HA8 is a low noise amplifier GaAs MMIC designed for
GNSS (Global Navigation Satellite Systems). This amplifier provides
low noise figure, high gain and high IP3 operated by single low positive
power supply. This IC has the function of Stand-by mode. The
NJG1108HA8 can be tuned to wide frequency from 1.5GHz to 2.7GHz
by changing the external matching components.
An ultra-small and ultra-thin package of the USB6-A8 is adopted.
I PACKAGE OUTLINE
NJG1108HA8
I APPLICATIONS
GNSS application, like GPS,Galileo,GLONASS and COMPASS
W-LAN and WiMAX application
Note: Please check the Application Note for WLAN and WiMAX .
I FEATURES
G Operating frequency range
G Low voltage operation
G Low current consumption
1.5~2.7GHz
+2.7V typ.
2.0mA typ.
@VCTL=1.85V
1uA typ.
@VCTL=0V
19dB typ.
@VCTL=1.85V, f=1.575GHz
1.0dB typ.
@VCTL=1.85V, f=1.575GHz
-15.0dBm typ. @VCTL=1.85V, f=1.575GHz
0dBm typ.
@VCTL=1.85V, f=1.575+1.5751GHz
USB6-A8 (Package size: 1.0x1.2x0.38mm)
G High gain
G Low noise figure
G Input power at 1dB gain compression point
G High input IP3
G Ultra-small and ultra-thin package
I PIN CONFIGURATION
(Top View)
GN
D
3
RFI
N
RFOU
T
4
2
Bia
Circui
GN
D
Logi
Circui
5
VCT
L
ITRUTH TABLE
VIN
V
1
Pin Connection
1. VINV
2. RFOUT
3. GND
4. RFIN
5. GND
6. VCTL
6
“H”=VCTL(H), “L”=VCTL(L)
VCTL
LNA Mode
H
Active Mode
L
Sleep Mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2013-04-02
-1-
NJG1108HA8
IABSOLUTE MAXIMUM RATINGS
Ta=+25°C, Zs=Zl=50ohm
PARAMETER
CONDITIONS
SYMBOL
RATINGS
UNITS
Drain Voltage
VDD
5.0
V
Inverter voltage
VINV
5.0
V
Control voltage
VCTL
5.0
V
Input power
Pin
VDD=2.7V
+15
dBm
Power dissipation
PD
On PCB board, Tjmax=150°C
150
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
IELECTRICAL CHARACTERISTICS 1
GENERAL CONDITIONS: VDD=VINV=2.7V, Ta=+25°C, Zs=Zl=50ohm, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating voltage
VDD
2.5
2.7
3.5
V
Inverter supply voltage
VINV
2.5
2.7
3.5
V
Control voltage (High)
VCTL(H)
1.5
1.85
VINV+0.3
V
Control voltage (Low)
VCTL(L)
0
0
0.3
V
Operating current1
(Active Mode, RF OFF)
IDD1
RF OFF, VCTL=1.85V
-
2.0
3.0
mA
Operating current2
(Sleep Mode, RF OFF)
IDD2
RF OFF, VCTL=0V
-
1
5
µA
Inverter current1
IINV1
RF OFF, VCTL=1.85V
-
30
60
µA
Inverter current2
IINV2
RF OFF, VCTL=0V
-
9
20
µA
Control current
ICTL
RF OFF, VCTL=1.85V
-
6
20
µA
-2-
NJG1108HA8
IELECTRICAL CHARACTERISTICS 2 (Active Mode)
GENERAL CONDITIONS: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating Frequency
freq
1.57
1.575
1.58
GHz
Small signal gain
Gain
17.0
19.0
21.5
dB
-
1.0
1.2
dB
-19.0
-15.0
-
dBm
-5.0
0
-
dBm
Noise figure
Input power at 1dB gain
compression point
Input 3rd order
intercept point
NF
Exclude PCB & connector
losses (IN: 0.05dB)
P-1dB(IN)
IIP3
f1=fRF, f2=fRF+100kHz,
Pin=-34dBm
RF IN VSWR
VSWRi
-
2.0
2.5
RF OUT VSWR
VSWRo
-
1.5
2.0
-3-
NJG1108HA8
ITERMINAL INFORMATION
No.
SYMBOL
DESCRIPTION
1
VINV
2
RFOUT
RF Output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L3 is a RF choke inductor. These elements are used as
output matching circuit.
3
GND
Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.)
4
RFIN
RF input pin. A DC blocking capacitor is not required. An external matching
circuit is required.
5
GND
Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.)
6
VCTL
Control voltage input pin. This control pin is set to high. LNA suffers from
standby state when LNA puts the changeover voltage of "Low" in a state of
movement when the changeover voltage of "High" is put in this terminal.
Power supply pin of the inverter circuit.
CAUTION
1) Ground terminal (3, 5) should be connected to the ground plane as low inductance as possible.
-4-
NJG1108HA8
I ELECTRICAL CHARACTERISTICS
(Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit)
Pout vs. Pin
Gain, IDD vs. Pin
8
22
5
20
0
Pout
Gain (dB)
Pout (dBm)
(fRF=1575MHz)
24
-5
-10
-15
P-1dB(IN)=-15.0dBm
-20
-25
-40
-30
-20
-10
0
6
18
5
16
4
IDD
14
3
12
2
10
8
-40
10
7
Gain
IDD (mA)
(fRF=1575MHz)
10
1
P-1dB(IN)=-15.0dBm
0
-30
-20
Pin (dBm)
-10
0
10
Pin (dBm)
Pout, IM3 vs. Pin
NF vs. frequency
(fRF=1575+1575.1MHz)
20
4
(Exclude PCB, Connector Losses)
0
3
Pout, IM3 (dBm)
Noise Figure (dB)
3.5
2.5
2
1.5
NF
Pout
-20
-40
-60
1
IM3
IIP3=+2.4dBm
-80
0.5
0
1.5
1.55
1.6
1.65
-100
-40
-30
-20
-10
0
10
Pin (dBm)
frequency (GHz)
k factor vs. frequency
20
k factor
15
10
5
0
0
5
10
15
20
frequency (GHz)
-5-
NJG1108HA8
I ELECTRICAL CHARACTERISTICS
(Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit)
Gain, NF vs. VDD, VINV
P-1dB(IN) vs. VDD, VINV
(fRF=1575MHz)
4
Gain (dB)
20
Gain
3.5
-10
3
-12
18
2.5
16
2
1.5
14
NF
P-1dB(IN) (dBm)
22
-14
-18
1
10
0.5
-22
0
-24
2.5
3
3.5
4
P-1dB(IN)
-16
12
8
2.5
(fRF=1575MHz)
-8
NF (dB)
24
-20
3
VDD, VINV (V)
OIP3, IIP3 vs. VDD, VINV
12
24
(fRF=1575MHz)
5
10
OIP3
20
6
18
4
16
2
IIP3
14
0
12
-2
VSWRi
4
8
VSWRi, VSWRo
OIP3 (dBm)
22
4
VSWR vs. VDD, VINV
(fRF=1575+1575.1MHz, Pin=-34dBm)
IIP3 (dBm)
26
3.5
VDD, VINV (V)
VSWRo
3
2
1
10
2.5
-4
3
3.5
4
VDD, VINV (V)
(RF OFF)
IDD (mA)
4
3
IDD
2
1
0
2.5
3
3.5
VDD, VINV (V)
-6-
3
3.5
VDD, VINV (V)
IDD vs. VDD, VINV
5
0
2.5
4
4
NJG1108HA8
I ELECTRICAL CHARACTERISTICS
(Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit)
Gain, NF vs. Temperature
(fRF=1575MHz)
22
20
P-1dB(IN) vs. Temperature
7
-8
6
-10
16
4
14
3
12
2
NF
P-1dB(IN) (dBm)
5
NF (dB)
Gain (dB)
Gain
18
1
10
8
-50
0
-12
P-1dB(IN)
-14
-16
-18
-20
-22
0
100
50
(fRF=1575MHz)
-24
-50
0
Temperature (oC)
(fRF=1575+1575.1MHz, Pin=-34dBm)
20
5
IIP3
0
-50
0
50
VSWRi, VSWRo
10
IIP3 (dBm)
OIP3 (dBm)
10
VSWRi
4
OIP3
15
(f=1575MHz)
5
15
20
5
VSWRo
3
2
1
0
0
-50
-5
100
0
50
100
Temperature (oC)
o
Temperature ( C)
IDD vs. Temperature
IDD vs. VCTL
(RF OFF)
5
100
VSWR vs. Temperature
OIP3, IIP3 vs. Temperature
25
50
Temperature (oC)
(RF OFF)
3
2.5
4
IDD
IDD (mA)
IDD (mA)
2
3
IDD
2
1.5
-40oC
+85oC
1
-25oC
-40oC
0oC
+25oC
1
0.5
+50oC
+85oC
0
-50
0
0
50
Temperature (oC)
100
0
0.5
1
1.5
2
2.5
3
VCTL (V)
-7-
NJG1108HA8
I ELECTRICAL CHARACTERISTICS
(Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50ohm, with application circuit)
-8-
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (f=50MHz~20GHz)
S21, S12 (f=50MHz~20GHz)
NJG1108HA8
I APPLICATION CIRCUIT
(Top View)
3
GND
L2
10nH
RFIN
4
RF IN
L4
15nH
RFOUT
C1
100pF
2
RF OUT
L1
39nH
L3
12nH
VDD=2.7V
C2
1000pF
Bias
Circuit
GND
VINV
Logic
Circuit
5
1
VINV=2.7V
C3
1000pF
VCTL
6
VCTL=0V or 1.85V
C4
1000pF
I TEST PCB LAYOUT
(Top View)
Parts List
Parts ID
L1~L4
VDD
C1~C4
C2
RF IN
L2
L3
L1
L4
C3
C4
VCTL
C1
VINV
Notes
MURATA
(LQP03T series)
MURATA
(GRM03 series)
RF OUT
PCB (FR-4): t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z0=50ohm)
PCB SIZE=17.0mmx17.0mm
-9-
NJG1108HA8
0.38±0.06
+0.012
0.038-0.009
IPACKAGE OUTLINE (USB6-A8)
0.03
0.2 (MIN0.15)
S
S
TERMINAL TREAT
Substrate
Molding material
UNIT
WEIGHT
:Au
:FR5
:Epoxy resin
:mm
:1.1mg
0.2±0.04
C0.1
6
R0.05
5
1
4
0.2±0.04
0.4
0.6
Photo resist coating
0.8
1.2±0.05
0.1±0.05
2
3
0.4
0.2±0.07
1.0±0.05
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
- 10 -
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.