AKIN AKTURK
1335 Carlsbad Drive
Gaithersburg, MD 20879, USA
Tel: 240 463 1859
Email: akin.akturk@gmail.com
akturka@umd.edu
http://www.ece.umd.edu/~akturka
EDUCATION
Ph. D., Electrical & Computer Engineering, University of Maryland, College Park, MD, USA 2006
Dissertation: “Thermal and Performance Modeling of Nanoscale MOSFETs, Carbon Nanotube
Devices and Integrated Circuits”
M.S., Electrical & Computer Engineering, University of Maryland, College Park, MD, USA 2001
Thesis Title: “Investigation of Transient and DC Characteristics of CMOS Inverters”
B.S., Electrical & Electronics Engineering, Bilkent University, Ankara, Turkey 1999
RESEARCH and TEACHING EXPERIENCE
Ph. D. Research Associate, Electrical & Computer Engineering, University of Maryland, 2006
- Conducting nanotechnology research on modeling, simulation and investigation of integrated
circuits and nanoscale electronics, including carbon nanotube devices, sub-micron MOSFETs and
silicon-on-insulator MOSFETs.
- Investigating operation of devices and integrated circuits at cryogenic, room and high
temperatures.
- Taught graduate class “ENEE611 Integrated Circuit Design and Analysis”, as a substitute
instructor.
Graduate Research Assistant, Electrical & Computer Engineering, University of Maryland, 2000-2006
- Designed, tested and laid out chips using Cadence Virtuoso, and have them fabricated through
fabrication clearing house MOSIS. These chips were used to investigate device and chip thermal
performances at colder and hotter temperatures.
- Investigated operation of novel devices, and operation of electronics at cryogenic temperatures.
- Researched and developed simulators for electron transport in carbon nanotubes.
- Designed analog, digital and mixed-signal circuits, including phase locked loops (PLLs), lownoise amplifiers (LNAs), voltage controlled oscillators (VCOs) and frequency-modulation (FM)
radio.
Graduate Teaching Assistant, Electrical & Computer Engineering, University of Maryland, 1999-2000
- Assisted and guided students in sophomore class “ENEE206 Fundamental Electric and Digital
Circuit Laboratory”.
- Graded student reports for the ENEE206.
- Taught, and guided students in, junior class “ENEE312 Semiconductor Devices and Analog
Electronics”, as a substitute.
Researcher and Student, Electrical & Electronics Engineering, Bilkent University, Ankara, Turkey,
1995-1999
- Designed and implemented, in a group, a functional electrocardiogram.
- Hired to help model and simulate a ground penetrating radar for military electronics.
- Designed various analog and digital circuits, and RF antennas.
Internships
- Kardiosis Cardiological Diagnostic Systems Ltd. Co., Ankara, Turkey
- Worked on biomedical devices.
- Gate Elektronik, Ankara / Turkey
-Worked on circuit diagnostics
PUBLICATIONS IN PROFESSIONAL SCIENCE AND ENGINEERING JOURNALS
[1] A. Akturk, N. Goldsman, G. Pennington, A. Wickenden, “Terahertz current oscillations in single-
walled zig-zag carbon nanotubes,” accepted for publication in Physical Review Letters.
[2] A. Akturk, N. Goldsman, G. Pennington, A. Wickenden, “Electron transport and velocity
oscillations in a carbon nanotube,” accepted for publication in IEEE Transactions on
Nanotechnology.
[3] G. Pennington, N. Goldsman, A. Akturk, A. Wickenden, “Deformation potential carrier-phonon
scattering in semiconducting carbon nanotube transistors,” Applied Physics Letters 90(2), 0621101-4 (2007).
____Virtual Journal of Nanoscale Science and Technology 15(7) (2007).
[4] A. Akturk, N. Goldsman, G. Metze, “Self-consistent modeling of heating and MOSFET
performance in three-dimensional integrated circuits,” IEEE Transactions on Electron Devices
52(11), 2395-2403 (2005).
[5] A. Akturk, N. Goldsman, L. Parker, G. Metze, “Mixed-mode temperature modeling of full-chip
based on individual non-isothermal device operations,” Solid-State Electronics 49(7), 1127-1134
(2005).
[6] A. Akturk, G. Pennington, N. Goldsman, “Quantum modeling and proposed designs of carbon
nanotube (CNT) embedded nanoscale MOSFETs,” IEEE Transactions on Electron Devices 52(4),
577-584 (2005).
[7] A. Akturk, N. Goldsman, G. Metze, “Increased CMOS inverter switching speed with
asymmetrical doping,” Solid-State Electronics 47(2), 185-192 (2003).
[8] A. Akturk, N. Goldsman, G. Pennington, “Self-consistent ensemble Monte Carlo simulations
show terahertz oscillations in single-walled carbon nanotubes,” submitted to Journal of Applied
Physics (2007).
[9] A. Varma, Y. Afridi, A. Akturk, P. Klein, A. Hefner, B. Jacob, “Modeling heterogeneous SoCs
with SystemC: a digital/MEMs case study,” submitted to ACM Transactions on Embedded
Computing Systems (2007).
[10] A. Akturk, J. Allnutt, Z. Dilli, N. Goldsman, M. Peckerar, “Device modeling at cryogenic
temperatures: effects of incomplete ionization,” submitted to IEEE Transactions on Electron
Devices (2007).
[11] A. Akturk, N. Goldsman, “Single-walled zig-zag carbon nanotube steady-state transport
characteristics,” submitted to ASP Journal of Computational and Theoretical Nanoscience (2007).
[12] Z. Dilli, N. Goldsman, M. Peckerar, A. Akturk, G. Metze, “Design and testing of a self-powered
3-D integrated SOI CMOS system,” submitted to Microelectronic Engineering (2007).
PUBLICATIONS IN PROFESSIONAL SCIENCE AND ENGINEERING CONFERENCE PROCEEDINGS
[1] A. Wickenden, B. Nichols, M. Ervin, S. Kilpatrick, A. Akturk, G. Pennington, N. Goldsman, G.
Esen, A. Manasson, M. Fuhrer, “Carbon nanotube devices for sensing and communications
applications,” Proc. of 211th Electrochemical Society (ECS) Meeting H4, 1052 (2007) (Invited).
[2] G. Pennington, N. Goldsman, A. Akturk, A. Wickenden, “Multisubband Boltzmann carrier
transport in carbon nanotube transistors,” Proc. of American Physical Society (APS) March
Meeting, K1.00106 (2007).
[3] N. Goldsman, A. Akturk, “Analysis and design of key phenomena in electronics: nanostructures
and devices,” Proc. of Int. Society for Optical Eng. (SPIE) Conf., 637000I (2006) (Invited).
[4] A. Varma, Y. Afridi, A. Akturk, P. Klein, A. Hefner, B. Jacob, “Modeling MEMs microhotplate
structures with SystemC,” Proc. of Int. Conf. on Compilers, Architecture, and Synthesis for
Embedded Systems (CASES), 54-64 (2006).
[5] A. Akturk, G. Pennington, N. Goldsman, A. Wickenden, “Quantum electron transport in carbon
nanotubes: length dependence and velocity oscillations,” Proc. of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), 31-34 (2006).
[6] A. Akturk, N. Goldsman, Z. Dilli, M. Peckerar, “Device performance and package induced self-
heating effects at cryogenic temperatures,” Proc. of Int. Conf. on Simulation of Semiconductor
Processes and Devices (SISPAD), 240-243 (2006).
[7] Z. Dilli, N. Goldsman, A. Akturk, G. Metze, “A 3-d time-dependent Greens function approach to
modeling electromagnetic noise in on-chip interconnect networks,” Proc. of Int. Conf. on
Simulation of Semiconductor Processes and Devices (SISPAD), 337-340 (2006).
[8] A. Akturk, N. Goldsman, G. Metze, “An efficient inclusion of self-heating and quantum effects in
SOI device simulations,” Proc. of Int. Semiconductor Device Research Symposium (ISDRS), 99100 (2005).
[9] A. Akturk, N. Goldsman, N. Dhar, P. S. Wijewarnasuriya, “Modeling the temperature
dependence and optical response of HgCdTe diodes,” Proc. of Int. Semiconductor Device
Research Symposium (ISDRS), 70-71 (2005).
[10] G. Pennington, A. Akturk, J. M. McGarrity, N. Goldsman, “Transport properties of wide
bandgap nanotubes,” Proc. of Int. Semiconductor Device Research Symposium (ISDRS), 346-347
(2005).
[11] Z. Dilli, N. Goldsman, A. Akturk, “An impulse-response based methodology for modeling
complex interconnect networks,” Proc. of Int. Semiconductor Device Research Symposium
(ISDRS), 64-65 (2005).
[12] A. Akturk, G. Pennington, N. Goldsman, “Numerical device analysis of all-around gate carbon
nanotube (CNT) embedded field-effect transistors (FETs),” 16th Euro. Conf. on Diamond,
Diamond-Like Mat., Carbon Nanotubes and Nitrides, [5.6.11] (2005).
[13] G. Pennington, A. Akturk, N. Goldsman, “Low-field electronic transport in single-walled
semiconducting carbon nanotubes,” 16th Euro. Conf. on Diamond, Diamond-Like Mat., Carbon
Nanotubes and Nitrides, [15.5.2] (2005).
[14] A. Akturk, N. Goldsman, G. Metze, “Coupled simulation of device performance and heating of
vertically stacked three-dimensional integrated circuits,” Proc. of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), 51-54 (2005).
[15] A. Akturk, G. Pennington, N. Goldsman, “Device behavior modeling for carbon nanotube
silicon-on-insulator MOSFETs,” Proc. of Int. Conf. on Simulation of Semiconductor Processes
and Devices (SISPAD), 115-118 (2005).
[16] G. Pennington, A. Akturk, N. Goldsman, “Low-field transport model for semiconducting
carbon nanotubes,” Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices
(SISPAD), 87-90 (2005).
[17] G. Pennington, A. Akturk, N. Goldsman, “Phonon-limited transport in carbon nanotubes using
the Monte Carlo method,” Proc. of Int. Workshop on Computational Electronics (IWCE), 24-27
(2004).
[18] A. Akturk, G. Pennington, N. Goldsman, “Numerical performance analysis of carbon nanotube
(CNT) embedded MOSFETs,” Proc. of Int. Conf. on Simulation of Semiconductor Processes and
Devices (SISPAD), 153-156 (2004).
[19] A. Akturk, G. Pennington, N. Goldsman, “Temperature dependent mobility model for single-
walled zig-zag carbon nanotubes (CNTs),” Proc. of 8th Int. Conf. on Nanometer-Scale Science and
Tech. (NANO-8), 728-729[1846] (2004).
[20] A. Akturk, G. Pennington, N. Goldsman, “Characterisation of nanoscale carbon nanotube
(CNT) embedded CMOS inverters,” Proc. of 8th Int. Conf. on Nanometer-Scale Science and Tech.
(NANO-8), 769-770[413] (2004).
[21] A. Akturk, L. Parker, N. Goldsman, G. Metze, “Mixed-mode simulation of non-isothermal
quantum device operation and full-chip heating,” Proc. of Int. Semiconductor Device Research
Symposium (ISDRS), 508-509 (2003).
[22] G. Pennington, A. Akturk, N. Goldsman, “Electron mobility of a semiconducting carbon
nanotube,” Proc. of Int. Semiconductor Device Research Symposium (ISDRS), 412-413 (2003).
[23] A. Akturk, N. Goldsman, G. Metze, “Coupled modeling of time-dependent full-chip heating
and quantum non-isothermal device operation,” Proc. of Int. Conf. on Simulation of
Semiconductor Processes and Devices (SISPAD), 311-314 (2003).
[24] A. Akturk, G. Pennington, N. Goldsman, “Modeling the enhancement of nanoscale MOSFETs
by embedding carbon nanotubes in the channel”, Proc. of 3rd IEEE Conf. on Nanotechnology
(IEEE-NANO) 1, 24-27 (2003).
[25] A. Akturk, N. Goldsman, G. Metze, “Faster CMOS inverter switching obtained with channel
engineered asymmetrical halo implanted MOSFETs”, Proc. of Int. Semiconductor Device
Research Symposium (ISDRS), 118-121 (2001).
INVITED TALKS
[1] A. Wickenden, B. Nichols, M. Ervin, S. Kilpatrick, A. Akturk, G. Pennington, N. Goldsman, G.
Esen, A. Manasson, M. Fuhrer, “Carbon nanotube devices for sensing and communications
applications,” Proc. of 211th Electrochemical Society (ECS) Meeting H4, 1052 (2007).
[2] N. Goldsman, A. Akturk, “Analysis and design of key phenomena in electronics: nanostructures
and devices,” Proc. of Int. Society for Optical Eng. (SPIE) Conf., 637000I (2006).
HONORS & AWARDS
- Full teaching and research assistantships (tuition and stipend) during the M.S. and the Ph. D.,
Electrical & Computer Engineering, University of Maryland, College Park. 1999-2006
- Graduated 6th of the undergraduate class at Bilkent University, Ankara, Turkey. 1999
- Merit-based scholarship, Netas-Northern Electric Telecommunication Co., Istanbul, Turkey. 1998
- Fellowship (tuition and stipend) during the B.S., Electrical & Electronics Engineering, Bilkent
University, Ankara, Turkey. 1995-1999
- Ranked 30th among approximately a million in the national university entrance exams of Turkey.
1995
CHIPS DESIGNED TO BE FABRICATED BY MOSIS
T47FCD, T47FCA, T47FBH, T3CUCF, T3AJCD, T3AJBV
PATENTS
United States Patent Application: 20050254215
Inventors: Michael Khbeis, George Metze, Neil Goldsman, Akin Akturk
“Use of thermally conductive vias to extract heat from microelectronic chips and method of
manufacturing”
Abstract: A cooling device for a microcircuit provides a direct path of thermal extraction from a high
heat producing area to a cooler area. A thermal insulation layer is formed on a body having at least
one component thereon that generates the high heat producing area. At least one via is formed through
an entire thickness of the insulation layer and is in direct communication with the high heat producing
area. Heat from the high heat producing area is channeled through each via to the cooler area, which
may be ambient atmosphere or a good thermal conductor, such as a heat sink. A thermal conductive
material may be deposited within the via and increase the rate of thermal extraction.
ACTIVITIES
- Member of the Institute of Electrical and Electronics Engineers (IEEE).
- Reviewer for
o Microelectronic Engineering Journal
o IEEE Transactions on Electron Devices
o Journal of Vacuum Science and Technology
o International Conference on Simulation of Semiconductor Processes and Devices
(SISPAD)
o International Semiconductor Device Research Symposium (ISDRS)
- Active member and treasurer of the Washington DC Turkish Folk Dance Troupe.
SOFTWARE
C, Matlab, Pspice, Cadence, Magic, Unix, Windows