®
Alexander Lidow PhD
Efficient Power Conversion Corporation
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
1
Agenda
• Overview of EPC eGaN® FET technology
• The opportunity to improve efficiency and
performance
• Future Products
• Conclusions
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
2
Overview of eGaN FET Technology
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
3
eGaN FETs Structure
AlGaN Electron Generating Layer
Dielectric
G
S
-
-
-
- -
-
D
-
- -
-
-
-
-
-
-
-
GaN
-
-
-
Aluminum Nitride
Isolation Layer
Si
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
4
eGaN FETs Structure
Passivation
Metal 3
Metal 2
Via 2
Metal 1 Drain
G
G
GaN
Source
Silicon
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
5
Flip Chip Assembly
HEATSINK
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
6
The Opportunity to Improve
Efficiency
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
7
Topologies Explored
Buck Converter
Flyback Converter
Full Bridge Isolated Converter
Forward Converter
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
8
Buck Converter
Advantage:
• High power density
and high efficiency
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
9
48V - 1.2V Efficiency Comparison
82%
80%
78%
76%
74%
Efficiency (%)
72%
70%
68%
66%
64%
62%
60%
500kHz eGaN FET
58%
500kHz MOSFET
56%
54%
300kHz MOSFET
52%
0
1
2
3
4
5
6
7
8
9
10
Output Current (A)
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
10
Efficiency vs VIN @ VOUT = 1.2 V / 5A
95%
100V eGaN FET
vs
60V MOSFET
90%
300kHz MOSFET
500kHz MOSFET
800kHz MOSFET
300kHz eGaN FET
500kHz eGaN FET
800kHz eGaN FET
Efficiency (%)
85%
80%
75%
40V eGaN FET
vs
40V MOSFET
70%
10
20
30
40
50
60
Input Voltage (V)
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
11
Efficiency vs Frequency @ 1.2Vout / 5A
92%
90%
88%
86%
84%
Efficiency (%)
82%
80%
78%
76%
74%
MOSFET @ 12Vin
72%
MOSFET @ 24Vin
70%
MOSFET @ 48Vin
68%
eGaN FET @ 12Vin
66%
eGaN FET @ 24Vin
64%
eGaN FET @ 48Vin
62%
300
400
500
600
700
800
Switching Frequency (kHz)
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
12
Buck Size Comparison
A 24V-1.2V Buck converter was built with both with eGaN FETs and stateof-the-art silicon power MOSFETs
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
13
Buck Size Comparison
184 mm2
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
14
Buck Size Comparison
121 mm2
A 24V-1.2V Buck converter with eGaN FETs is 50% smaller and has 30%
less power losses at 800 kHz.
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
15
Flyback Converter
Advantage:
• Low cost at low
power density
Flyback Converter
36~57 V
3.3 V
4.5 A
13W
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
16
Flyback Converter
90%
88%
86%
84%
Efficiency
82%
80%
78%
76%
300kHz Mosfet
74%
300kHz eGaN FET
72%
500kHz MOSFET
500kHz eGaN FET
70%
0
0.5
1
1.5
2
2.5
3
3.5
4
Output Current (A)
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
17
Forward Converter
Advantage:
• High power density
at lower power
48 V
5V
5.2 A
26 W
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
18
Forward Converter
95%
93%
91%
89%
Efficiency (%)
87%
85%
83%
300 kHz eGaN FET
81%
500 kHz eGaN FET
79%
300 kHz MOSFET
77%
500 kHz MOSFET
75%
0
1
2
3
4
5
6
Output Current (Adc)
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
19
Isolated Full Bridge Converter
Advantage:
• Isolation and high power
density at high power
36~75 V
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
12 V
15 A
180 W
www.epc-co.com
20
Isolated 1/8 Brick
Efficiency comparison @ 12 VOUT
eGaN FET @ 333 kHz vs MOSFET @ 250 kHz
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
21
Isolated 1/8 Brick
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
22
EPC Product Plans
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
23
Beyond 600 Volts
2012
1000.00
Rated RDS(ON) mΩ
2011
2009
100.00
100 mΩ
100
5x6mm
PQFN
4
150 mΩ
8x8mm
PQFN
90 mΩ
8x8mm
PQFN
25
10.00
400 mΩ
400
5x6mm
PQFN
250 mΩ
5x6mm
250
PQFN
7
LGA
Package
1.00
0
200
400
600
800
1000
1200
1400
Rated VDSS(MAX)
EPC’s eGaN FET products will extend to 600V in 2011 and to
900V and 1200V in 2012 if there is adequate customer interest
EPC
24- The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
24
Beyond Discrete Devices
Driver On Board
Discrete FET with Driver
Full-Bridge with Driver and Level Shift
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
25
Conclusions
•
•
•
Enhancement mode gallium nitride on silicon
(eGaN®) technology opens up a new set of
options for improving overall system efficiency.
For each of the four most common topologies
for low voltage power conversion, eGaN FETs
demonstrated significant improvement in
performance compared with the best power
MOSFETs
In the future, eGaN technology will allow even
higher power density and cost reductions
through higher levels of integration.
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com
26
EPC - The Leader in eGaN® FETs
PCIM Asia 2011
www.epc-co.com