IRFH5020PbF
HEXFET® Power MOSFET
VDS
200
V
RDS(on) max
55
mΩ
Qg (typical)
36
nC
RG (typical)
1.9
Ω
ID
34
A
(@VGS = 10V)
(@Tc(Bottom) = 25°C)
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Benefits
Features
Low RDSon
Low Thermal Resistance to PCB (≤ 0.8°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5020TRPbF
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
IRFH5020TR2PbF
PQFN 5mm x 6mm
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Top) = 25°C
ID @ TC(Top) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Top) = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through
1
g
f
Max.
200
± 20
5.1
4.1
34
21
7.8
4.9
63
3.6
8.3
Units
0.07
-55 to + 150
W/°C
c
f
V
A
W
°C
are on page 9
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IRFH5020PbF
Static @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
BVDSS
Drain-to-Source Breakdown Voltage
Parameter
200
–––
–––
V
ΔΒVDSS /ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.22
–––
V/°C
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 7.5A
RDS(on)
Static Drain-to-Source On-Resistance
–––
47
55
mΩ
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-12
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
1.0
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
18
–––
–––
Qg
Total Gate Charge
–––
36
54
Qgs1
Pre-Vth Gate-to-Source Charge
–––
8.6
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
2.1
–––
Qgd
Gate-to-Drain Charge
–––
11
–––
Qgodr
Gate Charge Overdrive
–––
14
–––
nA
S
nC
Switch Charge (Qgs2 + Q gd)
–––
13
–––
Output Charge
–––
13
–––
nC
Ω
Gate Resistance
–––
1.9
–––
Turn-On Delay Time
–––
9.3
–––
tr
Rise Time
–––
7.7
–––
td(off)
Turn-Off Delay Time
–––
21
–––
tf
Fall Time
–––
6.0
–––
Ciss
Input Capacitance
–––
2290
–––
Coss
Output Capacitance
–––
120
–––
Crss
Reverse Transfer Capacitance
–––
33
–––
VDS = VGS, ID = 150μA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 50V, ID = 7.5A
VGS = 10V
ID = 7.5A
See Fig.17 & 18
Qsw
RG
e
VDS = 100V
Qoss
td(on)
Conditions
VGS = 0V, ID = 250μA
VDS = 16V, VGS = 0V
VDD = 100V, VGS = 10V
ns
ID = 7.5A
RG =1.8Ω
See Fig.15
VGS = 0V
pF
VDS = 100V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
320
mJ
–––
7.5
A
Diode Characteristics
Parameter
Min.
Continuous Source Current
IS
(Body Diode)
(Body Diode)
Max.
–––
–––
7.5
–––
–––
63
Units
c
Conditions
MOSFET symbol
A
Pulsed Source Current
ISM
Typ.
D
showing the
integral reverse
G
S
p-n junction diode.
e
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 7.5A, VGS = 0V
trr
Reverse Recovery Time
–––
45
68
ns
TJ = 25°C, IF = 7.5A, VDD = 100V
Qrr
Reverse Recovery Charge
–––
459
689
nC
di/dt = 500A/μs
ton
Forward Turn-On Time
e
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
2
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
g
g
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Typ.
0.5
–––
–––
–––
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Max.
0.8
15
35
21
Units
°C/W
May 19, 2015
IRFH5020PbF
1000
1000
100
10
BOTTOM
1
0.1
4.5V
0.01
100
BOTTOM
10
4.5V
1
≤ 60μs PULSE WIDTH
Tj = 150°C
≤ 60μs PULSE WIDTH
Tj = 25°C
0.001
0.1
0.1
1
10
100
0.1
100
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10
TJ = 150°C
1
TJ = 25°C
0.1
VDS = 50V
≤ 60μs PULSE WIDTH
0.01
3.0
4.0
5.0
6.0
7.0
1.5
1.0
0.5
0.0
-60 -40 -20
20
40
60
80 100 120 140 160
Fig 4. Normalized On-Resistance Vs. Temperature
16
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
0
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000
ID = 7.5A
VGS = 10V
2.0
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Ciss
1000
Coss
100
Crss
ID= 7.5A
12
VDS = 160V
VDS = 100V
VDS = 40V
8
4
0
10
1
10
100
1000
0
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
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10
20
30
40
50
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
3
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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IRFH5020PbF
1000
10
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
TJ = 150°C
TJ = 25°C
1
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
10
1msec
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1
10
VSD , Source-to-Drain Voltage (V)
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
8
VGS(th) Gate threshold Voltage (V)
6.0
6
ID , Drain Current (A)
100μsec
1
4
2
0
ID = 1.0A
ID = 1.0mA
ID = 500μA
ID = 150μA
5.0
4.0
3.0
2.0
25
50
75
100
125
150
-75
-50
-25
TA , Ambient Temperature (°C)
0
25
50
75
100
125
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case (Top) Temperature
Fig 10. Threshold Voltage Vs. Temperature
Thermal Response ( ZthJC )
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Top)
4
150
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EAS, Single Pulse Avalanche Energy (mJ)
160
ID = 7.5A
120
TJ = 125°C
80
TJ = 25°C
40
4
8
12
16
1400
I D
1.1A
1.6A
BOTTOM 7.5A
1200
TOP
1000
800
600
400
200
0
20
25
VGS, Gate-to-Source Voltage (V)
50
75
100
125
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 125°C and
Tstart =25°C (Single Pulse)
10
1
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 125°C.
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
5
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150
Starting TJ , Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage
Avalanche Current (A)
( Ω)
RDS (on), Drain-to -Source On Resistance m
IRFH5020PbF
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IRFH5020PbF
Driver Gate Drive
D.U.T
ƒ
-
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test
Circuit
VDS
RD
VDS
V GS
Fig 16b. Unclamped Inductive Waveforms
90%
D.U.T.
RG
+
-V DD
10%
VGS
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
Fig 17a. Switching Time Test Circuit
td(off)
tr
tf
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
1K
VCC
S
Vgs(th)
Qgs1 Qgs2
Fig 18a. Gate Charge Test Circuit
6
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Qgd
Qgodr
Fig 18b. Gate Charge Waveform
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IRFH5020PbF
PQFN 5x6 Outline "B" Package Details
PQFN 5x6 Outline "G" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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IRFH5020PbF
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
Bo
Ko
W
P1
DES CRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Pitch between s uccessive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
T ype
Reel
Diameter
(Inch)
QT Y
Reel
Width
W1
(mm)
Ao
(mm)
Bo
(mm)
Ko
(mm)
P1
(mm)
W
(mm)
Pin 1
Quadrant
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH5020PbF
Qualification information†
Indus trial
Qualification level
(per JE DE C JE S D47F
Moisture Sensitivity Level
PQFN 5mm x 6mm
RoHS compliant
†
††
†††
††
†††
guidelines )
MS L1
†††
(per JE DE C J-S T D-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 11.3mH, RG = 25Ω, IAS = 7.5A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Revision History
Date
4/14/2014
5/5/2014
4/28/2015
5/19/2015
Comment
• Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259) on page1
• Corrected typo on Breadown Voltage Temp. Coefficient from "0.02V/C" to "0.22V/C" on page 2.
• Updated Package outline on page7.
• Updated data sheet with the new IR corporate template.
• Updated Trr Typ/Max from "46/69ns" to "45/68ns" on page 2.
• Updated Qrr Typ/Max from "97/150nC" to "459/689nC" on page 2.
• Updated package outline for “option B” and added package outline for “option G” on page 7
• Updated tape and reel on page 8.
• Updated package outline for “option G” on page 7.
• Updated "IFX logo" on page 1 and page 9.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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