共 63 篇
1. Displacement-sensitive photonic crystal structures based on guided resonance in
photonic crystal slabs. By: Suh, Wonjoo; Yanik, M. F.; Solgaard, Olav; Fan, Shanhui.
Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p1999, 3p; (AN 9377480)
2. Efficient 3–5-µm negative luminescence from HgCdTe/Si photodiodes. By: Lindle, J.
R.; Bewley, W. W.; Vurgaftman, I.; Meyer, J. R.; Varesi, J. B.; Johnson, S. M.. Applied
Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2002, 3p; (AN 9377479)
3. Significant enhancement of terahertz radiation from InSb by use of a compact fiber
laser and an external magnetic field. By: Takahashi, Hiroshi; Suzuki, Yuji; Sakai,
Masahiro; Ono, Shingo; Sarukura, Nobuhiko; Sugiura, Toshiharu; Hirosumi, Tomoya;
Yoshida, Makoto. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2005, 3p;
(AN 9377477)
4. Dynamics of causal beam refraction in negative refractive index materials. By:
Cummer, Steven A.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2008,
3p; (AN 9377476)
5. Intrinsic diffraction losses in photonic crystal waveguides with line defects. By:
Andreani, Lucio Claudio; Agio, Mario. Applied Physics Letters, 3/31/2003, Vol. 82
Issue 13, p2011, 3p; (AN 9377475)
6. Current control for magnetized plasma in direct-current plasma-immersion ion
implantation. By: Tang, Deli; Chu, Paul K.. Applied Physics Letters, 3/31/2003, Vol.
82 Issue 13, p2014, 3p; (AN 9377474)
7. Atomistic simulation of strain-induced amorphization. By: Lund, Alan C.; Schuh,
Christopher A.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2017, 3p; (AN
9377473)
8. Observation of interface defects in thermally oxidized SiC using positron annihilation.
By: Dekker, James; Saarinen, Kimmo; Ólafsson, Halldór; Sveinbjörnsson, Einar Ö..
Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2020, 3p; (AN 9377472)
9. Optical properties of single-crystalline ZnO nanowires on m-sapphire. By: Ng, Hou
Tee; Chen, Bin; Li, Jun; Han, Jie; Meyyappan, M.; Wu, J.; Li, S. X.; Haller, E. E..
Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2023, 3p; (AN 9377471)
10. High-electric-field photocurrent in thin-film ZnS formed by pulsed-laser deposition. By:
Yano, S.; Schroeder, R.; Sakai, H.; Ullrich, B.. Applied Physics Letters, 3/31/2003,
Vol. 82 Issue 13, p2026, 3p; (AN 9377470)
11. Color variation of ZnGa[sub 2]O[sub 4] phosphor by reduction-oxidation processes.
By: Kim, J. S.; Kang, H. I.; Kim, W. N.; Kim, J. I.; Choi, J. C.; Park, H. L.; Kim, G. C.;
Kim, T. W.; Hwang, Y. H.; Mho, S. I.; Jung, M.-C.; Han, M.. Applied Physics Letters,
3/31/2003, Vol. 82 Issue 13, p2029, 3p; (AN 9377468)
12. Electromigration reliability of dual-damascene Cu/porous methylsilsesquioxane low k
interconnects. By: Lee, Ki-Don; Ogawa, Ennis T.; Yoon, Sean; Lu, Xia; Ho, Paul S..
Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2032, 3p; (AN 9377467)
13. Observation of metal–insulator transition in Al–Pd–Re quasicrystals by x-ray
absorption and photoemission spectroscopy. By: Lay, Y. Y.; Jan, J. C.; Chiou, J. W.;
Tsai, H. M.; Pong, W. F.; Tsai, M.-H.; Pi, T. W.; Lee, J. F.; Ma, C. I.; Tseng, K. L.;
Wang, C. R.; Lin, S. T.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2035,
3p; (AN 9377466)
14. Atomistic modeling of amorphization and recrystallization in silicon. By: Pelaz,
Lourdes; Marqués, Luis A.; Aboy, Marıa; Barbolla, Juan; Gilmer, George H.. Applied
Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2038, 3p; (AN 9377464)
15. Density functional theory analysis of infrared modes in carbon-incorporated SiO[sub 2].
By: Petersen, Max; Schulberg, Michelle T.; Gochberg, Lawrence A.. Applied Physics
Letters, 3/31/2003, Vol. 82 Issue 13, p2041, 3p; (AN 9377463)
16. Strain-induced band gap shrinkage in Ge grown on Si substrate. By: Ishikawa,
Yasuhiko; Wada, Kazumi; Cannon, Douglas D.; Liu, Jifeng; Luan, Hsin-Chiao;
Kimerling, Lionel C.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2044,
3p; (AN 9377462)
17. Reaction of SiO[sub 2] with hafnium oxide in low oxygen pressure. By: Wang, S. J.;
Lim, P. C.; Huan, A. C. H.; Liu, C. L.; Chai, J. W.; Chow, S. Y.; Pan, J. S.; Li, Q.; Ong,
C. K.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2047, 3p; (AN
9377460)
18. Time-resolved cathodoluminescence assessment of deep-level transitions in
hydride-vapor-phase-epitaxy GaN. By: Dıaz-Guerra, C.; Piqueras, J.; Cavallini, A..
Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2050, 3p; (AN 9377457)
19. Proton-irradiation-induced intermixing of InGaAs quantum dots. By: Lever, P.; Tan, H.
H.; Jagadish, C.; Reece, P.; Gal, M.. Applied Physics Letters, 3/31/2003, Vol. 82
Issue 13, p2053, 3p; (AN 9377453)
20. Buckling phenomena in Y[sub 2]O[sub 3] thin films on GaAs substrates. By: Paumier,
F.; Gaboriaud, R. J.; Coupeau, C.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue
13, p2056, 3p; (AN 9377449)
21. Determination of the charge carrier compensation mechanism in Te-doped GaAs by
scanning tunneling microscopy. By: Gebauer, J.; Weber, E. R.; Jäger, N. D.; Urban, K.;
Ebert, Ph.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2059, 3p; (AN
9377447)
22. Investigation of trap processes in polycrystalline silicon thin film transistors by ac
measurement. By: Yan, Feng; Migliorato, Piero; Shimoda, Tatsuya. Applied Physics
Letters, 3/31/2003, Vol. 82 Issue 13, p2062, 3p; (AN 9377446)
23. Thermoelectric properties of Al[sub 1-x]In[sub x]N and Al[sub 1-y-z]Ga[sub y]In[sub
z]N prepared by radio-frequency sputtering: Toward a thermoelectric power device.
By: Yamaguchi, Shigeo; Iwamura, Yasuo; Yamamoto, Atsushi. Applied Physics
Letters, 3/31/2003, Vol. 82 Issue 13, p2065, 3p; (AN 9377444)
24. Function principle of a relaxation oscillator based on a bistable quantum Hall device.
By: Nachtwei, G.; Kalugin, N. G.; Sağol, B. E.; Stellmach, Ch.; Hein, G.. Applied
Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2068, 3p; (AN 9377443)
25. Valence-band structure of self-assembled InAs quantum dots studied by capacitance
spectroscopy. By: Bock, C.; Schmidt, K. H.; Kunze, U.; Malzer, S.; Döhler, G. H..
Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2071, 3p; (AN 9377441)
26. Cathodoluminescence and Hall-effect measurements in sulfur-doped
chemical-vapor-deposited diamond. By: Nakazawa, Kazushi; Tachiki, Minoru;
Kawarada, Hiroshi; Kawamura, Aki; Horiuchi, Kenji; Ishikura, Takefumi. Applied
Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2074, 3p; (AN 9377437)
27. Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on
4H–SiC(0001) by reactive molecular-beam epitaxy. By: Dhar, S.; Brandt, O.; Trampert,
A.; Däweritz, L.; Friedland, K. J.; Ploog, K. H.; Keller, J.; Beschoten, B.; Güntherodt,
G.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2077, 3p; (AN 9377435)
28. Electron tunneling from channel to gate. By: Price, Peter J.. Applied Physics Letters,
3/31/2003, Vol. 82 Issue 13, p2080, 2p; (AN 9377434)
29. Effect of Be[sup +]+O[sup +] coimplantation on Be acceptors in GaN. By: Nakano,
Yoshitaka; Kachi, Tetsu; Jimbo, Takashi. Applied Physics Letters, 3/31/2003, Vol. 82
Issue 13, p2082, 3p; (AN 9377430)
30. The Franz–Keldysh effect in shocked GaN:Mg. By: Peng, H. Y.; McCluskey, M. D.;
Gupta, Y. M.; Kneissl, M.; Johnson, N. M.. Applied Physics Letters, 3/31/2003, Vol.
82 Issue 13, p2085, 3p; (AN 9377428)
31. Valence band alignment with a small spike at the CuI/CuInS[sub 2] interface. By:
Konovalov, I.; Szargan, R.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13,
p2088, 3p; (AN 9377427)
32. Cu(In[sub 1-x]Ga[sub x])Se[sub 2] growth studies by in situ spectroscopic light
scattering. By: Scheer, R.; Neisser, A.; Sakurai, K.; Fons, P.; Niki, S.. Applied
Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2091, 3p; (AN 9377426)
33. Comparison of oxygen-chain models for late thermal double donors in silicon. By: Lee,
Y. J.; von Boehm, J.; Pesola, M.; Nieminen, R. M.. Applied Physics Letters,
3/31/2003, Vol. 82 Issue 13, p2094, 3p; (AN 9377425)
34. Superconducting MgB[sub 2] thin films on silicon carbide substrates by hybrid
physical–chemical vapor deposition. By: Zeng, X. H.; Pogrebnyakov, A. V.; Zhu, M. H.;
Jones, J. E.; Xi, X. X.; Xu, S. Y.; Wertz, E.; Li, Qi; Redwing, J. M.; Lettieri, J.;
Vaithyanathan, V.; Schlom, D. G.; Liu, Zi-Kui; Trithaveesak, O.; Schubert, J.. Applied
Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2097, 3p; (AN 9377424)
35. Magnetism in cobalt-doped Cu[sub 2]O thin films without and with Al, V, or Zn
codopants. By: Kale, S. N.; Ogale, S. B.; Shinde, S. R.; Sahasrabuddhe, M.; Kulkarni,
V. N.; Greene, R. L.; Venkatesan, T.. Applied Physics Letters, 3/31/2003, Vol. 82
Issue 13, p2100, 3p; (AN 9377423)
36. High critical-current density in robust MgB[sub 2]/Mg nanocomposites. By: Li, Qiang;
Gu, G. D.; Zhu, Y.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2103, 3p;
(AN 9377422)
37. Variation of domain formation in a 15 nm NiFe layer exchange coupled with NiO layers
of different thicknesses. By: Liu, Z. Y.; Adenwalla, S.. Applied Physics Letters,
3/31/2003, Vol. 82 Issue 13, p2106, 3p; (AN 9377421)
38. Josephson device for simultaneous time and energy detection. By: Esposito, E.;
Ejrnaes, M.; Pagano, S.; Perez de Lara, D.; Cristiano, R.. Applied Physics Letters,
3/31/2003, Vol. 82 Issue 13, p2109, 3p; (AN 9377419)
39. Damping as a function of pulsed field amplitude and bias field in thin film Permalloy.
By: Nibarger, J. P.; Lopusnik, R.; Silva, T. J.. Applied Physics Letters, 3/31/2003,
Vol. 82 Issue 13, p2112, 3p; (AN 9377418)
40. Enhancement of the current in a superconductor strip by means of curved
superconducting shields. By: Genenko, Y. A.; Rauh, H.. Applied Physics Letters,
3/31/2003, Vol. 82 Issue 13, p2115, 3p; (AN 9377417)
41. Strain manipulation in BaTiO[sub 3]/SrTiO[sub 3] artificial lattice toward high dielectric
constant and its nonlinearity. By: Kim, Leejun; Jung, Donggeun; Kim, Juho; Kim,
Young Sung; Lee, Jaichan. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13,
p2118, 3p; (AN 9377416)
42. Thermochemical description of dielectric breakdown in high dielectric constant
materials. By: McPherson, J.; Kim, J-Y.; Shanware, A.; Mogul, H.. Applied Physics
Letters, 3/31/2003, Vol. 82 Issue 13, p2121, 3p; (AN 9377415)
43. Mechanisms for retention loss in ferroelectric Pt/Pb(Zr[sub 0.4]Ti[sub 0.6])O[sub 3]/Pt
capacitors. By: Kang, B. S.; Yoon, Jong-Gul; Kim, D. J.; Noh, T. W.; Song, T. K.; Lee,
Y. K.; Lee, J. K.; Park, Y. S.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13,
p2124, 3p; (AN 9377414)
44. Stress-induced suppression of piezoelectric properties in PbTiO[sub 3]:La thin films via
scanning force microscopy. By: Kholkin, A. L.; Shvartsman, V. V.; Emelyanov, A. Yu.;
Poyato, R.; Calzada, M. L.; Pardo, L.. Applied Physics Letters, 3/31/2003, Vol. 82
Issue 13, p2127, 3p; (AN 9377413)
45. Dynamics of nanoscale polarization backswitching in tetragonal lead zirconate titanate
thin film. By: Fu, Desheng; Suzuki, Kazuyuki; Kato, Kazumi; Suzuki, Hisao. Applied
Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2130, 3p; (AN 9377412)
46. Microwave properties of compositionally graded (Ba, Sr)TiO[sub 3] thin films according
to the direction of the composition gradient for tunable microwave applications. By:
Lee, Su-Jae; Moon, Seung Eon; Ryu, Han-Cheol; Kwak, Min-Hwan; Kim, Young-Tae;
Han, Seok-Kil. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2133, 3p; (AN
9377411)
47. Reversible phase transition and structure memory effect of metastable phase in
electron-irradiated poly(vinylidene-fluoride-trifluoroethyline) copolymers. By: Li, W. P.;
Tang, Y. W.; Guo, S. S.; Wang, D. H.; Yang, G.; Wang, R. H.; Zhao, X. Z.. Applied
Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2136, 3p; (AN 9377410)
48. Electrical characterization of electrochemically grown single copper nanowires. By:
Toimil Molares, M. E.; Höhberger, E. M.; Schaeflein, Ch.; Blick, R. H.; Neumann, R.;
Trautmann, C.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2139, 3p; (AN
9377409)
49. Shape and growth of InAs quantum dots on GaAs(113)A. By: Temko, Y.; Suzuki, T.;
Jacobi, K.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2142, 3p; (AN
9377408)
50. Random networks of carbon nanotubes as an electronic material. By: Snow, E. S.;
Novak, J. P.; Campbell, P. M.; Park, D.. Applied Physics Letters, 3/31/2003, Vol. 82
Issue 13, p2145, 3p; (AN 9377407)
51. Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si[sub
1-x]Ge[sub x] (0<=x<=1) on SiO[sub 2]. By: Kanno, Hiroshi; Tsunoda, Isao; Kenjo,
Atsushi; Sadoh, Taizoh; Miyao, Masanobu. Applied Physics Letters, 3/31/2003, Vol.
82 Issue 13, p2148, 3p; (AN 9377406)
52. Control of tunnel oxide thickness in Si-nanocrystal array memories obtained by ion
implantation and its impact in writing speed and volatility. By: González-Varona, O.;
Garrido, B.; Cheylan, S.; Pérez-Rodrıguez, A.; Cuadras, A.; Morante, J. R.. Applied
Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2151, 3p; (AN 9377405)
53. Effect of a rotating electrode on the formation of single-walled carbon nanotubes. By:
Bae, Jun Cheol; Yoon, Young Joon; Baik, Hong Koo; Lee, Se-Jong; Song, Kie Moon.
Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2154, 3p; (AN 9377404)
54. Low-light divergence in photovoltaic parameter fluctuations. By: Shvydka, Diana;
Karpov, V. G.; Compaan, A. D.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue
13, p2157, 3p; (AN 9377403)
55. Detection of electrical spin injection by light-emitting diodes in top- and side-emission
configurations. By: Fiederling, R.; Grabs, P.; Ossau, W.; Schmidt, G.; Molenkamp, L.
W.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2160, 3p; (AN 9377402)
56. High-efficiency polymer light-emitting diodes with stable saturated red emission based
on blends of dioctylfluorene-benzothiadiazole-dithienylbenzothiadiazole terpolymers
and poly[2-methoxy,5-(2-ethylhexoxy)-1,4-phenylene vinylene]. By: Niu, Yu-Hua; Hou,
Qiong; Cao, Yong. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2163, 3p;
(AN 9377401)
57. Doping diagnosis by evaluation of the surface Fermi level using scanning
Maxwell-stress microscopy. By: Matsukawa, Takashi; Kanemaru, Seigo; Masahara,
Meishoku; Nagao, Masayoshi; Tanoue, Hisao; Itoh, Junji. Applied Physics Letters,
3/31/2003, Vol. 82 Issue 13, p2166, 3p; (AN 9377400)
58. Second-order generation of point defects in gamma-irradiated float-zone silicon, an
explanation for “type inversion”. By: Pintilie, I.; Fretwurst, E.; Lindström, G.; Stahl, J..
Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2169, 3p; (AN 9377399)
59. Application of convergent beam electron diffraction to two-dimensional strain mapping
in silicon devices. By: Armigliato, A.; Balboni, R.; Carnevale, G. P.; Pavia, G.; Piccolo,
D.; Frabboni, S.; Benedetti, A.; Cullis, A. G.. Applied Physics Letters, 3/31/2003, Vol.
82 Issue 13, p2172, 3p; (AN 9377398)
60. InGaAs/InAlAs avalanche photodiode with undepleted absorber. By: Li, Ning; Sidhu,
Rubin; Li, Xiaowei; Ma, Feng; Zheng, Xiaoguang; Wang, Shuling; Karve, Gauri;
Demiguel, Stephane; Holmes, Archie L.; Campbell, Joe C.. Applied Physics Letters,
3/31/2003, Vol. 82 Issue 13, p2175, 3p; (AN 9377397)
61. Temperature- and injection-dependent lifetime spectroscopy for the characterization of
defect centers in semiconductors. By: Schmidt, Jan. Applied Physics Letters,
3/31/2003, Vol. 82 Issue 13, p2178, 3p; (AN 9377396)
62. Layer-guided shear acoustic plate mode sensor. By: Newton, M. I.; McHale, G.; Martin,
F.. Applied Physics Letters, 3/31/2003, Vol. 82 Issue 13, p2181, 3p; (AN 9377395)
63. Publisher’s Note: “Thermal effects and in-plane magnetic anisotropy in thin-film
recording media” [Appl. Phys. Lett. 82, 1075 (2003)]. By: Ajan, Antony; Abarra, E. N.;
Acharya, B. R.; Inomata, A.; Okamoto, I.; Shinohara, M.. Applied Physics Letters,
3/31/2003, Vol. 82 Issue 13, p2184, 1p; (AN 9377394)