共 62 篇
1. Wavelength tuning of surface plasmon resonance using dielectric layers on silver
island films. By: Xu, G.; Tazawa, M.; Jin, P.; Nakao, S.; Yoshimura, K.. Applied
Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3811, 3p; (AN 9885242)
2. Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with
Schottky enhancement layers. By: Shen, H.; Aliberti, K.; Stann, B.; Newman, P.;
Mehandru, R.; Ren, F.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3814,
3p; (AN 9885239)
3. High-color-rendering light sources consisting of a 350-nm ultraviolet light-emitting
diode and three-basal-color phosphors. By: Nishida, Toshio; Ban, Tomoyuki;
Kobayashi, Naoki. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3817, 3p;
(AN 9885237)
4. Beam shaping by a periodic structure with negative refraction. By: Shadrivov, Ilya V.;
Sukhorukov, Andrey A.; Kivshar, Yuri S.. Applied Physics Letters, 6/2/2003, Vol. 82
Issue 22, p3820, 3p; (AN 9885234)
5. Polymeric wavelength filters fabricated using holographic surface relief gratings on
azobenzene-containing polymer films. By: Kang, Jae-Wook; Kim, Mi-Jeong; Kim,
Jae-Pil; Yoo, Seong-Jong; Lee, Jae-Suk; Kim, Dong Yu; Kim, Jang-Joo. Applied
Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3823, 3p; (AN 9885231)
6. Excited-state absorption in NdAl[sub 3](BO[sub 3])[sub 4] laser crystal. By: Brenier, A.;
Jaque, D.; Garcia Solé, J.; Luo, Z. D.. Applied Physics Letters, 6/2/2003, Vol. 82
Issue 22, p3826, 3p; (AN 9885230)
7. Mutual pulse injection-seeding scheme by the use of two Fabry–Pérot laser diodes for
tunable dual-wavelength optical short-pulse generation. By: Wang, D. N.; Fang,
Xiaohui. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3829, 3p; (AN
9885229)
8. Orange and red upconversion laser pumped by an avalanche mechanism in Pr[sup
3+], Yb[sup 3+]:BaY[sub 2]F[sub 8]. By: Osiac, E.; Heumann, E.; Huber, G.; Kück, S.;
Sani, E.; Toncelli, A.; Tonelli, M.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue
22, p3832, 3p; (AN 9885228)
9. Photonic crystal structure with square symmetry within each layer and a
three-dimensional band gap. By: Roundy, David; Joannopoulos, John. Applied
Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3835, 3p; (AN 9885227)
10. A 33% efficient chemical oxygen–iodine laser with supersonic mixing of iodine and
oxygen. By: Rybalkin, V.; Katz, A.; Barmashenko, B. D.; Rosenwaks, S.. Applied
Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3838, 3p; (AN 9885226)
11. Single-pass gain in a chirped quasi-phase-matched optical parametric oscillator. By:
Baker, K. L.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3841, 3p; (AN
9885225)
12. Effects of pulsed potential on address electrode in a surface-discharge
alternating-current plasma display panel. By: Ahn, Jeong Chull; Shintani, Youichi;
Tachibana, Kunihide; Sakai, Tetsuo; Kosugi, Naoki. Applied Physics Letters,
6/2/2003, Vol. 82 Issue 22, p3844, 3p; (AN 9885224)
13. Epitaxial (100) iridium on A-plane sapphire: A system for wafer-scale diamond
heteroepitaxy. By: Dai, Z.; Bednarski-Meinke, C.; Loloee, R.; Golding, B.. Applied
Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3847, 3p; (AN 9885223)
14. Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple
quantum wells. By: Sun, Yue Jun; Brandt, Oliver; Ramsteiner, Manfred; Grahn, Holger
T.; Ploog, Klaus H.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3850, 3p;
(AN 9885222)
15. Strain partition of Si/SiGe and SiO[sub 2]/SiGe on compliant substrates. By: Yin, H.;
Hobart, K. D.; Kub, F. J.; Shieh, S. R.; Duffy, T. S.; Sturm, J. C.. Applied Physics
Letters, 6/2/2003, Vol. 82 Issue 22, p3853, 3p; (AN 9885221)
16. Spatially resolved Poisson strain and anticlastic curvature measurements in Si under
large deflection bending. By: Yang, Wenge; Larson, B. C.; Ice, G. E.; Tischler, J. Z.;
Budai, J. D.; Chung, K.-S.; Lowe, W. P.. Applied Physics Letters, 6/2/2003, Vol. 82
Issue 22, p3856, 3p; (AN 9885220)
17. Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs
quantum dots. By: Xu, Zhangcheng; Birkedal, Dan; Hvam, Jørn M.; Zhao, Zongyan;
Liu, Yanmei; Yang, Kuntang; Kanjilal, Aloke; Sadowski, Janusz. Applied Physics
Letters, 6/2/2003, Vol. 82 Issue 22, p3859, 3p; (AN 9885219)
18. Electroluminescence of a quantum dot cascade structure. By: Anders, S.; Rebohle, L.;
Schrey, F. F.; Schrenk, W.; Unterrainer, K.; Strasser, G.. Applied Physics Letters,
6/2/2003, Vol. 82 Issue 22, p3862, 3p; (AN 9885218)
19. Electrically active defects in silicon produced by ion channeling. By: Kortegaard
Nielsen, H.; Svensson, B. G.; Goubet, J.-J.; Nylandsted Larsen, A.. Applied Physics
Letters, 6/2/2003, Vol. 82 Issue 22, p3865, 3p; (AN 9885217)
20. Time-resolved energy dispersive x-ray reflectometry measurements on ruthenium
phthalocyanine gas sensing films. By: Rossi Albertini, V.; Generosi, A.; Paci, B.;
Perfetti, P.; Rossi, G.; Capobianchi, A.; Paoletti, A. M.; Caminiti, R.. Applied Physics
Letters, 6/2/2003, Vol. 82 Issue 22, p3868, 3p; (AN 9885216)
21. Sensitizing properties of amorphous Si clusters on the 1.54-µm luminescence of Er in
Si-rich SiO[sub 2]. By: Franzò, G.; Boninelli, S.; Pacifici, D.; Priolo, F.; Iacona, F.;
Bongiorno, C.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3871, 3p; (AN
9885215)
22. Band gap of GaAs[sub 1-x]Bi[sub x], 0<x<3.6%. By: Francoeur, S.; Seong, M.-J.;
Mascarenhas, A.; Tixier, S.; Adamcyk, M.; Tiedje, T.. Applied Physics Letters,
6/2/2003, Vol. 82 Issue 22, p3874, 3p; (AN 9885214)
23. Visible photoluminescence in amorphous SiO[sub x] thin films prepared by silicon
evaporation under a molecular oxygen atmosphere. By: Molinari, M.; Rinnert, H.;
Vergnat, M.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3877, 3p; (AN
9885213)
24. Void nucleation in thin HfO[sub 2] layer on Si. By: Miyata, Noriyuki; Nabatame,
Toshihide; Horikawa, Tsuyoshi; Ichikawa, Masakazu; Toriumi, Akira. Applied Physics
Letters, 6/2/2003, Vol. 82 Issue 22, p3880, 3p; (AN 9885212)
25. Observation of self-organized superlattice in AlGaInAsSb pentanary alloys. By: Jaw, D.
H.; Chang, J. R.; Su, Y. K.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22,
p3883, 3p; (AN 9885211)
26. Mode analysis in He[sup +]-implanted lithium fluoride planar waveguides. By: Mussi,
V.; Somma, F.; Moretti, P.; Mugnier, J.; Jacquier, B.; Montereali, R. M.; Nichelatti, E..
Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3886, 3p; (AN 9885209)
27. Energy level evolution at a silole/magnesium thin-film interface. By: Mäkinen, A. J.;
Uchida, M.; Kafafi, Z. H.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3889,
3p; (AN 9885208)
28. GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding. By:
Chandrasekaran, N.; Soga, T.; Jimbo, T.. Applied Physics Letters, 6/2/2003, Vol. 82
Issue 22, p3892, 3p; (AN 9885207)
29. Temperature dependence of photoreflectance in InAs/GaAs quantum dots. By: Lai, C.
M.; Chang, F. Y.; Chang, C. W.; Kao, C. H.; Lin, H. H.; Jan, G. J.; Lee, Johnson.
Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3895, 3p; (AN 9885205)
30. The effect of the surface layer of tetrahedral amorphous carbon films on their
tribological and electron emission properties investigated by atomic force microscopy.
By: Liu, Dongping; Benstetter, Günther; Frammelsberger, Werner. Applied Physics
Letters, 6/2/2003, Vol. 82 Issue 22, p3898, 3p; (AN 9885204)
31. High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by
multistep pulsed-laser deposition. By: Kaidashev, E. M.; Lorenz, M.; von Wenckstern,
H.; Rahm, A.; Semmelhack, H.-C.; Han, K.-H.; Benndorf, G.; Bundesmann, C.;
Hochmuth, H.; Grundmann, M.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22,
p3901, 3p; (AN 9885203)
32. Cyclotron resonance of terahertz photoresponse in two-dimensional polar
semiconductors at high temperatures. By: Lei, X. L.; Liu, S. Y.. Applied Physics
Letters, 6/2/2003, Vol. 82 Issue 22, p3904, 3p; (AN 9885202)
33. Morphology and electronic transport of polycrystalline pentacene thin-film transistors.
By: Knipp, D.; Street, R. A.; Völkel, A. R.. Applied Physics Letters, 6/2/2003, Vol. 82
Issue 22, p3907, 3p; (AN 9885200)
34. Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility
transistors using WSi[sub x]- or W-based metallization. By: Luo, B.; Ren, F.; Fitch, R.
C.; Gillespie, J. K.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Baca, A. G.; Briggs, R.
D.; Gotthold, D.; Birkhahn, R.; Peres, B.; Pearton, S. J.. Applied Physics Letters,
6/2/2003, Vol. 82 Issue 22, p3910, 3p; (AN 9885199)
35. Ion-implanted In[sub 0.53]Ga[sub 0.47]As for ultrafast optoelectronic applications. By:
Carmody, C.; Tan, H. H.; Jagadish, C.; Gaarder, A.; Marcinkevicˇius, S.. Applied
Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3913, 3p; (AN 9885198)
36. Thickness-dependent stress effect in p-type metal–oxide–semiconductor structure
investigated by substrate injection current. By: Hong, Chao-Chi; Liao, Wei-Jian; Hwu,
Jenn-Gwo. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3916, 3p; (AN
9885197)
37. Observation of a scanning tunneling microscopy induced photocurrent during ballistic
electron emission microscopy. By: Heller, E. R.; Pelz, J. P.. Applied Physics Letters,
6/2/2003, Vol. 82 Issue 22, p3919, 3p; (AN 9885196)
38. Hot-electron spectroscopy in parallel magnetic fields. By: Kast, M.; Boxleitner, W.;
Pacher, C.; Strasser, G.; Gornik, E.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue
22, p3922, 3p; (AN 9885195)
39. Determination of the electron capture time in quantum-well infrared photodetectors
using time-resolved photocurrent measurements. By: Steinkogler, S.; Schneider, H.;
Walther, M.; Koidl, P.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3925,
3p; (AN 9885194)
40. Spin-torque transistor. By: Bauer, Gerrit E. W.; Brataas, Arne; Tserkovnyak, Yaroslav;
van Wees, Bart J.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3928, 3p;
(AN 9885193)
41. Al[sub 2]O[sub 3]/Si[sub 3]N[sub 4] stacked insulators for 0.1 µm gate
metal–oxide–semiconductor transistors realized by high-density Si[sub 3]N[sub 4]
buffer layers. By: Fujisaki, Yoshihisa; Iseki, Kunie; Ishiwara, Hiroshi; Mao, Ming;
Bubber, Randhir. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3931, 3p;
(AN 9885192)
42. Nanodomain engineering in RbTiOPO[sub 4] ferroelectric crystals. By: Rosenman, G.;
Urenski, P.; Agronin, A.; Arie, A.; Rosenwaks, Y.. Applied Physics Letters, 6/2/2003,
Vol. 82 Issue 22, p3934, 3p; (AN 9885191)
43. Effects of scaling the film thickness on the ferroelectric properties of SrBi[sub 2]Ta[sub
2]O[sub 9] ultra thin films. By: Celinska, J.; Joshi, V.; Narayan, S.; McMillan, L.; Paz de
Araujo, C.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3937, 3p; (AN
9885190)
44. High-temperature ferroelastic phase transitions in Li–Na niobate compounds. By:
Jiménez, B.; Castro, A.; Pardo, L.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue
22, p3940, 3p; (AN 9885189)
45. Tomography in the multiple scattering regime of the scanning transmission electron
microscope. By: Levine, Zachary H.. Applied Physics Letters, 6/2/2003, Vol. 82
Issue 22, p3943, 3p; (AN 9885188)
46. Single-electron charging of a self-assembled II–VI quantum dot. By: Seufert, J.;
Rambach, M.; Bacher, G.; Forchel, A.; Passow, T.; Hommel, D.. Applied Physics
Letters, 6/2/2003, Vol. 82 Issue 22, p3946, 3p; (AN 9885187)
47. Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and
scanning photoelectron microscopy. By: Chiou, J. W.; Jan, J. C.; Tsai, H. M.; Pong, W.
F.; Tsai, M.-H.; Hong, I.-H.; Klauser, R.; Lee, J. F.; Hsu, C. W.; Lin, H. M.; Chen, C. C.;
Shen, C. H.; Chen, L. C.; Chen, K. H.. Applied Physics Letters, 6/2/2003, Vol. 82
Issue 22, p3949, 3p; (AN 9885186)
48. Nonlocal resonant interaction between coupled quantum wires. By: Morimoto, T.;
Iwase, Y.; Aoki, N.; Sasaki, T.; Ochiai, Y.; Shailos, A.; Bird, J. P.; Lilly, M. P.; Reno, J.
L.; Simmons, J. A.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3952, 3p;
(AN 9885185)
49. Photovoltaic effect on differential capacitance profiles of low-energy-BF[sub 2][sup
+]-implanted silicon wafers. By: Chang, M. N.; Chen, C. Y.; Pan, F. M.; Lai, J. H.; Wan,
W. W.; Liang, J. H.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3955, 3p;
(AN 9885184)
50. Failure modes of electrospun nanofibers. By: Zussman, E.; Rittel, D.; Yarin, A. L..
Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3958, 3p; (AN 9885183)
51. Single-component light-emitting electrochemical cell with improved stability. By:
Edman, L.; Pauchard, M.; Liu, B.; Bazan, G.; Moses, D.; Heeger, A. J.. Applied
Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3961, 3p; (AN 9885181)
52. Pentacene-based radio-frequency identification circuitry. By: Baude, P. F.; Ender, D.
A.; Haase, M. A.; Kelley, T. W.; Muyres, D. V.; Theiss, S. D.. Applied Physics
Letters, 6/2/2003, Vol. 82 Issue 22, p3964, 3p; (AN 9885180)
53. Bottom-contact organic field-effect transistors having low-dielectric layer under source
and drain electrodes. By: Yuan, Jianfeng; Zhang, Jian; Wang, Jun; Yan, Xuanjun; Yan,
Donghang; Xu, Wu. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3967, 3p;
(AN 9885179)
54. A superconducting antenna-coupled hot-spot microbolometer. By: Luukanen, A.;
Pekola, J. P.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3970, 3p; (AN
9885178)
55. Spectral responsivity and quantum efficiency of n-ZnO/p-Si photodiode fully isolated by
ion-beam treatment. By: Park, C. H.; Jeong, I. S.; Kim, J. H.; Im, Seongil. Applied
Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3973, 3p; (AN 9885177)
56. Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility
transistors. By: Karmalkar, Shreepad; Sathaiya, D. Mahaveer; Shur, M. S.. Applied
Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3976, 3p; (AN 9885176)
57. Polymeric amorphous carbon as p-type window within amorphous silicon solar cells.
By: Khan, R. U. A.; Silva, S. R. P.; van Swaaij, R. A. C. M. M.. Applied Physics
Letters, 6/2/2003, Vol. 82 Issue 22, p3979, 3p; (AN 9885175)
58. Nonlinear optical susceptibility measurements of solutions using third-harmonic
generation on the interface. By: Shcheslavskiy, Vladislav; Petrov, Georgi; Yakovlev,
Vladislav V.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3982, 3p; (AN
9885174)
59. Optical peristalsis. By: Koss, Brian A.; Grier, David G.. Applied Physics Letters,
6/2/2003, Vol. 82 Issue 22, p3985, 3p; (AN 9885173)
60. Li[sub 2]CsSb: A highly-efficient photocathode material. By: Ettema, A. R. H. F..
Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3988, 3p; (AN 9885172)
61. Erratum: “Layer-by-layer growth of Ag on a GaN(0001) surface” [Appl. Phys. Lett. 82,
1389 (2003)]. By: Wu, Kehui; Xue, Q. Z.; Bakhtizin, R. Z.; Fujikawa, Y.; Li, X.; Nagao,
T.; Xue, Q. K.; Sakurai, T.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22,
p3991, 1p; (AN 9885170)
62. Publisher’s Note: “One-step formation of aligned carbon nanotube field emitters at 400
°C” [Appl. Phys. Lett. 82, 2485 (2003)]. By: Shiratori, Y.; Hiraoka, H.; Takeuchi, Y.;
Itoh, S.; Yamamoto, M.. Applied Physics Letters, 6/2/2003, Vol. 82 Issue 22, p3991,
1p; (AN 9885171)