M74HC253 DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 16ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 253 DESCRIPTION The M74HC253 is an high speed CMOS DUAL 4 CHANNEL MULTIPLEXER fabricated with silicon gate C2MOS technology. Each of these data (1C0-1C3, 2C0-2C3) is selected by the two address inputs A and B. Separate strobe inputs (1G, 2G) are provided for each of the two four-line sections. The strobe input ) (s t c u DIP PACKAGE TUBE t e l o s b O TSSOP u d o r P e ORDER CODES DIP SOP TSSOP ) s ( ct SOP M74HC253B1R M74HC253M1R T&R M74HC253RM13TR M74HC253TTR (nG) can be used to inhibit the data output; the output of M74HC253 is a high impedance while the strobe input is held high. All inputs are equipped with protection circuits against static discharge and transient excess voltage. d o r P e t e l o s b O PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/11 M74HC253 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL 1, 15 14, 2 1G, 2G A, B 6, 5, 4, 3 1C0 to 1C3 7, 9 1Y, 2Y 10, 11, 12, 13 8 16 2C0 to 2C3 NAME AND FUNCTION GND VCC Output Enable Inputs Common Data Select Inputs Data Inputs From Source 1 3 State Multiplexer Outputs Data Inputs From Source 2 Ground (0V) Positive Supply Voltage u d o TRUTH TABLE SELECT INPUTS B A C0 C1 C2 X L L L L H H H H X L L H H L L H H X L H X X X X X X X X X L H X X X X X X X X X L H X X r P e s b O 2/11 let o s b O ) s ( t c u d o X : Don’t Care Z : High Impedance t e l o r P e DATA INPUTS C3 X X X X X X X L H ) s ( ct STROBE OUTPUT Y G H L L L L L L L L Z L H L H L H L H M74HC253 LOGIC DIAGRAM ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o This logic diagram has not be used to estimate propagation delays s b O ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Supply Voltage Value Unit -0.5 to +7 V VI DC Input Voltage -0.5 to VCC + 0.5 V VO DC Output Voltage -0.5 to VCC + 0.5 ± 20 V mA IIK DC Input Diode Current IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ± 50 mA ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg Storage Temperature TL Lead Temperature (10 sec) 500(*) mW -65 to +150 °C 300 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C 3/11 M74HC253 RECOMMENDED OPERATING CONDITIONS Symbol Parameter VCC Value Supply Voltage VI Input Voltage VO Output Voltage Top Operating Temperature Input Rise and Fall Time tr, tf Unit 2 to 6 V 0 to VCC V 0 to VCC V -55 to 125 °C VCC = 2.0V 0 to 1000 ns VCC = 4.5V 0 to 500 ns VCC = 6.0V 0 to 400 ns ) s ( ct DC SPECIFICATIONS Test Condition Symbol VIH VIL VOH Parameter TA = 25°C VCC (V) High Level Input Voltage Min. 2.0 4.5 6.0 2.0 4.5 6.0 Low Level Input Voltage High Level Output Voltage 1.5 3.15 4.2 IO=-20 µA 4.5 IO=-20 µA IOZ ICC 4/11 u d o -40 to 85°C Max. e t e l Pr Min. Max. 1.5 3.15 4.2 0.5 1.35 1.8 -55 to 125°C Min. Max. 1.5 3.15 4.2 0.5 1.35 1.8 V 0.5 1.35 1.8 1.9 2.0 1.9 1.9 4.4 4.5 4.4 4.4 IO=-20 µA 5.9 6.0 5.9 5.9 IO=-4.0 mA 4.18 4.31 4.13 4.10 IO=-5.2 mA 5.68 5.8 5.63 5.60 Unit V V Low Level Output Voltage 2.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=20 µA 0.0 0.1 0.1 0.1 ete 6.0 IO=20 µA 0.0 0.1 0.1 0.1 4.5 IO=4.0 mA 0.17 0.26 0.33 0.40 6.0 IO=5.2 mA 0.18 0.26 0.33 0.40 6.0 VI = VCC or GND ± 0.1 ±1 ±1 µA 6.0 VI = VIH or VIL VO = VCC or GND ± 0.5 ±5 ±5 µA 6.0 VI = VCC or GND 4 40 80 µA l o s b O b O s ( t c u d o 6.0 II )- 2.0 4.5 Typ. so 6.0 VOL Value Pr Input Leakage Current High Impedance Output Leakage Current Quiescent Supply Current V M74HC253 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter TA = 25°C VCC (V) tTLH tTHL Output Transition Time Min. 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 tPLH tPHL Propagation Delay Time (Cn - Y) tPLH tPHL Propagation Delay Time (A, B - Y) tPZL tPZH High Impedance Output Enable Time (G - Y) tPLZ tPHZ High Impedance Output Disable Time (G - Y) Value R1 = 1KΩ R1 = 1KΩ Symbol Parameter CIN Input Capacitance CPD Power Dissipation Capacitance (note 1) VCC (V) o r P du ct 5.0 5.0 (s) Max. 30 8 7 48 15 12 68 20 16 36 12 9 22 11 9 75 15 13 115 23 20 150 30 26 100 20 17 100 20 17 -O Min. Min. Min. Max. 95 19 16 145 29 25 190 38 32 125 25 21 125 25 21 Unit Max. 110 22 19 175 35 30 225 45 38 150 30 26 150 30 26 ns ns ) s ( ct u d o let ns ns ns Value TA = 25°C Typ. Max. 5 10 58 -55 to 125°C r P e o s b CAPACITIVE CHARACTERISTICS Test Condition Typ. -40 to 85°C -40 to 85°C -55 to 125°C Min. Min. Max. 10 Unit Max. 10 pF pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4(per circuit) e t e ol s b O 5/11 M74HC253 TEST CIRCUIT ) s ( ct u d o TEST tPLH, tPHL tPZL, tPLZ e t e ol tPZH, tPHZ CL = 50pF/150pF or equivalent (includes jig and probe capacitance) R1 = 1KΩ or equivalent RT = ZOUT of pulse generator (typically 50Ω) ) (s t c u d o r P e t e l o s b O 6/11 s b O Pr SWITCH Open VCC GND M74HC253 WAVEFORM 1 : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) ) s ( ct u d o r P e t e l o ) (s s b O t c u WAVEFORM 2:OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle) d o r P e t e l o s b O 7/11 M74HC253 Plastic DIP-16 (0.25) MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 0.77 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D ) s ( ct 20 E 8.5 e 2.54 e3 17.78 u d o 0.335 7.1 I 5.1 s ( t c 1.27 e t e ol bs O ) 3.3 Z Pr 0.100 F L 0.787 0.700 0.280 0.201 0.130 0.050 u d o r P e t e l o s b O P001C 8/11 M74HC253 SO-16 MECHANICAL DATA mm. DIM. MIN. TYP A inch MAX. MIN. TYP. a1 1.75 MAX. 0.1 0.068 0.2 a2 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 b1 0.19 0.25 0.007 C 0.5 0.018 ) s ( ct 0.010 0.019 c1 45° (typ.) D 9.8 10 0.385 E 5.8 6.2 0.228 e 1.27 e3 8.89 F 3.8 4.0 4.6 5.3 L 0.5 ) (s e t e l so b O 1.27 S Pr 0.393 0.244 0.050 G M u d o 0.62 0.350 0.149 0.157 0.181 0.208 0.019 0.050 0.024 8° (max.) t c u d o r P e t e l o s b O PO13H 9/11 M74HC253 TSSOP16 MECHANICAL DATA mm. inch DIM. MIN. TYP A MAX. MIN. TYP. MAX. 1.2 A1 0.05 A2 0.8 b 0.047 0.15 0.002 0.004 0.006 1.05 0.031 0.039 0.041 0.19 0.30 0.007 c 0.09 0.20 0.004 D 4.9 5 5.1 0.193 E 6.2 6.4 6.6 0.244 E1 4.3 4.4 4.48 1 e bs 0.65 BSC K 0° L 0.45 let o s b 0.60 s ( t c 0.75 du ro P e 0.0089 0.197 0.201 0.252 0.260 0.173 0.176 0.0256 BSC 0° 8° 0.018 0.024 0.030 u d o r P e A O ) 8° 0.012 t e l o 0.169 ) s ( ct A2 A1 b O e K c L E D E1 PIN 1 IDENTIFICATION 1 0080338D 10/11 M74HC253 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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