VND810PEP
®
DOUBLE CHANNEL HIGH SIDE DRIVER
TARGET SPECIFICATION
TYPE
VND810PEP
RDS(on)
160 mΩ (*)
IOUT
3.5 A (*)
VCC
36 V
(*) Per each channel
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CMOS COMPATIBLE INPUTS
OPEN DRAIN STATUS OUTPUTS
■ ON STATE OPEN LOAD DETECTION
■ OFF STATE OPEN LOAD DETECTION
■ SHORTED LOAD PROTECTION
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
■ PROTECTION AGAINST LOSS OF GROUND
■ VERY LOW STAND-BY CURRENT
■
■
■
PowerSSO-12
PACKAGE
PowerSSO-12
ORDER CODES
TUBE
T&R
VND810PEP VND810PEP13TR
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VND810PEP is a monolithic device designed
in STMicroelectronics VIPower M0-3 Technology,
intended for driving any kind of load with one side
connected to ground.
Active VCC pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload. The
device detects open load condition both in on and
off state. Output shorted to VCC is detected in the
off state. Device automatically turns off in case of
ground pin disconnection.
BLOCK DIAGRAM
Vcc
Vcc
CLAMP
OVERVOLTAGE
UNDERVOLTAGE
GND
CLAMP 1
OUTPUT1
INPUT1
DRIVER 1
CLAMP 2
STATUS1
CURRENT LIMITER 1
LOGIC
DRIVER 2
OUTPUT2
OVERTEMP. 1
OPENLOAD ON 1
CURRENT LIMITER 2
INPUT2
OPENLOAD OFF 1
OPENLOAD ON 2
STATUS2
OPENLOAD OFF 2
OVERTEMP. 2
(**) See application schematic at page 8
October 2003 - Revision 1.2 (Working document)
1/14
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
VND810PEP
ABSOLUTE MAXIMUM RATING
Symbol
VCC
- VCC
- IGND
IOUT
- IOUT
IIN
Istat
Parameter
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
Value
41
- 0.3
- 200
Internally Limited
-6
+/- 10
+/- 10
Unit
V
V
mA
A
A
mA
mA
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VESD
Ptot
Tj
Tc
Tstg
- INPUT
4000
V
- STATUS
4000
V
- OUTPUT
5000
V
5000
54
Internally Limited
- 40 to 150
- 55 to 150
V
W
°C
°C
°C
- VCC
Power Dissipation TC=25°C
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
CONNECTION DIAGRAM (TOP VIEW)
GND
NC
INPUT1
STATUS1
STATUS2
INPUT2
1
2
3
4
5
6
12
11
10
9
8
7
Vcc
OUTPUT1
OUTPUT1
OUTPUT2
OUTPUT2
Vcc
TAB = Vcc
CURRENT AND VOLTAGE CONVENTIONS
IS
IIN1
VCC
VCC
INPUT 1
ISTAT1
VIN1
STATUS 1
VSTAT1
IOUT1
IIN2
OUTPUT 1
INPUT 2
VIN2 ISTAT2
IOUT2
STATUS 2
VSTAT2
GND
OUTPUT 2
VOUT2
IGND
2/14
VOUT1
VND810PEP
THERMAL DATA
Symbol
Rthj-case
Parameter
Thermal Resistance Junction-case
Value
2.3
Unit
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
70 (*)
°C/W
(*) When mounted on a standard single-sided FR-4 board with 1 cm2 of Cu (at least 35µm thick) connected to all VCC pins.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)
(Per each channel)
POWER OUTPUTS
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Symbol
VCC
VUSD
VOV
RON
IS
Parameter
Operating Supply Voltage
Undervoltage Shut-down
Overvoltage Shut-down
On State Resistance
Supply Current
Test Conditions
Min
5.5
3
36
IOUT=1A; Tj=25°C
IOUT=1A; VCC>8V
Off State Output Current
Off State Output Current
Off State Output Current
Off State Output Current
Max
36
5.5
160
Unit
V
V
V
mΩ
Off State; VCC=13V; VIN=VOUT=0V
12
320
40
mΩ
µA
Off State; VCC=13V; VIN=VOUT=0V;
Tj=25°C
12
25
µA
5
7
50
0
5
3
mA
µA
µA
µA
µA
Typ
Max
Unit
On State; VCC=13V; VIN=5V; IOUT=0A
IL(off1)
IL(off2)
IL(off3)
IL(off4)
Typ
13
4
VIN=VOUT=0V
VIN=0V; VOUT=3.5V
VIN=VOUT=0V; VCC=13V; Tj =125°C
VIN=VOUT=0V; VCC=13V; Tj =25°C
0
-75
Test Conditions
RL=13Ω from VIN rising edge to
VOUT=1.3V
RL=13Ω from VIN falling edge to
VOUT=11.7V
RL=13Ω from VOUT=1.3V to
VOUT=10.4V
RL=13Ω from VOUT=11.7V to
VOUT=1.3V
Min
SWITCHING (VCC=13V)
Symbol
Parameter
td(on)
Turn-on Delay Time
td(off)
Turn-off Delay Time
dVOUT/
dt(on)
dVOUT/
dt(off)
Turn-on Voltage Slope
Turn-off Voltage Slope
30
µs
30
µs
0.6
V/µs
0.2
V/µs
LOGIC INPUT
Symbol
VIL
IIL
VIH
IIH
VI(hyst)
VICL
Parameter
Input Low Level
Low Level Input Current
Input High Level
High Level Input Current
Input Hysteresis Voltage
Input Clamp Voltage
Test Conditions
VIN = 1.25V
Min
Typ
1
3.25
VIN = 3.25V
IIN = 1mA
Max
1.25
10
0.5
6
IIN = -1mA
6.8
8
-0.7
Unit
V
µA
V
µA
V
V
V
VCC - OUTPUT DIODE
Symbol
VF
Parameter
Forward on Voltage
Test Conditions
-IOUT=0.5A; Tj=150°C
Min
Typ
Max
0.6
Unit
V
3/14
1
VND810PEP
ELECTRICAL CHARACTERISTICS (continued)
STATUS PIN
Symbol
VSTAT
ILSTAT
CSTAT
VSCL
Parameter
Test Conditions
Status Low Output Voltage ISTAT= 1.6 mA
Status Leakage Current
Normal Operation; VSTAT= 5V
Status Pin Input
Normal Operation; VSTAT= 5V
Capacitance
ISTAT= 1mA
Status Clamp Voltage
ISTAT= - 1mA
Min
6
Typ
6.8
Max
0.5
10
Unit
V
µA
100
pF
8
V
-0.7
V
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PROTECTIONS
Symbol
TTSD
TR
Thyst
tSDL
Parameter
Shut-down Temperature
Reset Temperature
Thermal Hysteresis
Status Delay in Overload
Conditions
Ilim
Current limitation
Vdemag
Turn-off Output Clamp
Voltage
Test Conditions
Min
150
135
7
Typ
175
5
5.5V<VCC<36V
IOUT=1A; L=6mH
Unit
°C
°C
°C
20
µs
7.5
A
7.5
A
15
Tj>TTSD
3.5
Max
200
VCC-41 VCC-48 VCC-55
V
OPENLOAD DETECTION
Symbol
IOL
tDOL(on)
VOL
tDOL(off)
Parameter
Openload ON State
Detection Threshold
Openload ON State
Detection Delay
Openload OFF State
Voltage Detection
Threshold
Openload Detection Delay
at Turn Off
Test Conditions
Min
Typ
Max
Unit
20
40
80
mA
200
µs
3.5
V
1000
µs
VIN=5V
IOUT=0A
VIN=0V
1.5
OPEN LOAD STATUS TIMING (with external pull-up)
IOUT < IOL
VOUT> VOL
VINn
OVERTEMP STATUS TIMING
Tj > TTSD
VINn
VSTAT n
VSTAT n
tSDL
tDOL(off)
4/14
2
2.5
tDOL(on)
tSDL
VND810PEP
Switching time Waveforms
VOUTn
90%
80%
dVOUT/dt(off)
dVOUT/dt(on)
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10%
t
VINn
td(on)
td(off)
t
TRUTH TABLE
CONDITIONS
Normal Operation
Current Limitation
Overtemperature
Undervoltage
Overvoltage
Output Voltage > VOLn
Output Current < I OLn
INPUTn
L
H
L
H
H
L
H
L
H
L
H
L
H
L
H
OUTPUTn
L
H
L
X
X
L
L
L
L
L
L
H
H
L
H
STATUSn
H
H
H
(Tj < TTSD) H
(Tj > TTSD) L
H
L
X
X
H
H
L
H
H
L
5/14
VND810PEP
ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN
ISO T/R 7637/1
Test Pulse
1
2
3a
3b
4
5
I
II
TEST LEVELS
III
IV
-25 V
+25 V
-25 V
+25 V
-4 V
+26.5 V
-50 V
+50 V
-50 V
+50 V
-5 V
+46.5 V
-75 V
+75 V
-100 V
+75 V
-6 V
+66.5 V
-100 V
+100 V
-150 V
+100 V
-7 V
+86.5 V
Delays and
Impedance
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
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ISO T/R 7637/1
Test Pulse
1
2
3a
3b
4
5
CLASS
C
E
6/14
I
C
C
C
C
C
C
TEST LEVELS RESULTS
II
III
C
C
C
C
C
C
C
C
C
C
E
E
IV
C
C
C
C
C
E
CONTENTS
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
VND810PEP
Figure1: Waveforms
NORMAL OPERATION
INPUTn
OUTPUT VOLTAGEn
STATUSn
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UNDERVOLTAGE
VCC
VUSDhyst
VUSD
INPUTn
OUTPUT VOLTAGEn
STATUSn
undefined
OVERVOLTAGE
VCC<VOV
VCC>V OV
VCC
INPUTn
OUTPUT VOLTAGEn
STATUSn
OPEN LOAD with external pull-up
INPUTn
VOUT>VOL
OUTPUT VOLTAGEn
VOL
STATUSn
OPEN LOAD without external pull-up
INPUTn
OUTPUT VOLTAGEn
STATUSn
OVERTEMPERATURE
Tj
TTSD
TR
INPUTn
OUTPUT CURRENTn
STATUSn
7/14
1
VND810PEP
APPLICATION SCHEMATIC
+5V +5V
+5V
VCC
Rprot
STATUS1
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Dld
µC
Rprot
INPUT1
OUTPUT1
Rprot
STATUS2
Rprot
INPUT2
OUTPUT2
GND
RGND
VGND
GND PROTECTION
REVERSE BATTERY
NETWORK
AGAINST
Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / IS(on)max.
2) RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
PD= (-VCC)2/RGND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
8/14
DGND
depending on how many devices are ON in the case of
several high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
VND810PEP
LOAD DUMP PROTECTION
OPEN LOAD DETECTION IN OFF STATE
Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating. The
same applies if the device will be subject to transients on
the VCC line that are greater than the ones shown in the
ISO T/R 7637/1 table.
Off state open load detection requires an external pull-up
resistor (RPU) connected between OUTPUT pin and a
positive supply voltage (VPU) like the +5V line used to
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
1) no false open load indication when load is connected:
in this case we have to avoid VOUT to be higher than
VOlmin; this results in the following condition
VOUT=(VPU/(RL+RPU))RL<VOlmin.
2) no misdetection when load is disconnected: in this
case the VOUT has to be higher than VOLmax; this
results in the following condition RPU<(VPU–VOLmax)/
IL(off2).
Because Is(OFF) may significantly increase if Vout is pulled
high (up to several mA), the pull-up resistor RPU should
be connected to a supply that is switched OFF when the
module is in standby.
The values of VOLmin, VOLmax and IL(off2) are available in
the Electrical Characteristics section.
µC I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between
the leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of µC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and I latchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
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Open Load detection in off state
V batt.
VPU
VCC
RPU
INPUT
DRIVER
+
LOGIC
IL(off2)
OUT
+
R
STATUS
-
VOL
RL
GROUND
9/14
VND810PEP
Off State Output Current
High Level Input Current
TBD
TBD
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Input Clamp Voltage
Status Leakage Current
TBD
Status Low Output Voltage
TBD
10/14
TBD
Status Clamp Voltage
TBD
VND810PEP
On State Resistance Vs Tcase
On State Resistance Vs VCC
TBD
TBD
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Openload On State Detection Threshold
Input High Level
TBD
Input Low Level
TBD
Input Hysteresis Voltage
TBD
TBD
11/14
VND810PEP
Overvoltage Shutdown
Openload Off State Voltage Detection Threshold
TBD
TBD
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Turn-on Voltage Slope
TBD
ILIM Vs Tcase
TBD
12/14
Turn-off Voltage Slope
TBD
VND810PEP
PSSO-12TM MECHANICAL DATA
mm.
MIN.
A
1.250
A1
0.000
A2
1.100
B
0.230
TYP
RY
DIM.
MAX.
1.620
0.100
1.650
0.410
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