SiC
Schottky
Barrier
Diodes
SCS110AX
3pin
SCS110AG
2pin
SiC Schottky barrier diodes have are now available for high
voltage resistance, large current circuits. High-speed switching
characteristics minimize switching loss, improving device operating
frequency.
Ene rgy
Sa ving
Dramatically lower switching loss
Applications
Ultra-short reverse recovery
Switching Waveforms
time (impossible to achieve
12
with silicon) enables
10
8
recovery charge (Qrr),
reducing switching loss
Current (A)
high-speed switching. This
minimizes the reverse
• Switching circuits
• Motor drive circuits
• PFC (Power Factor Correction) circuits and others
SiC SBD
6
A smaller area means
lower loss
4
Main Circuit:
SW Power Supply
SiC SBD
0
+
-6
Si FRD
Qrr
-4
end-product miniaturization.
PFC Circuit:
Boost voltage + DC
2
-2
significantly, contributing to
Circuit Example
0
IC
100
Time (nsec)
In addition, SiC devices
IC
200
trr Temperature Characteristics
unlike conventional silicon
fast recovery diodes where
the trr increases with
temperature. This enables
high-temperature driving
without increasing
90
Conditions
IF=10A
di/dt= -350A/Ǵsec
80
70
Si FRD
Stable temperature characteristics
60
50
SiC diodes exhibit stabler
40
trr difference
inreases with temperature
30
20
10
temperature characteristics
SiC SBD
(i.e. forward voltage)
SiC is largely temp.-independent
compared with
0
0
10
20
30
40
switching loss.
50
60
70
80
SBD: Forward Characteristics
10
90 100
silicon-based devices,
Ta (˚C)
simplifying parallel
connection(s) and
SiC wafer supplier SiCrystal has joined the ROHM Group. This
makes it possible to perform manufacturin g completely
in-house, from ingot formation to power device fabrication,
resulting in cutting-edge products with superior reliability and
quality.
preventing thermal runaway
- unlike Si FRDs.
FORWARD CURREN T : I F (A)
regardless of temperature,
Reverse Recovery Time trr (nsec)
100
maintain a constant trr
25˚C
75˚C
125˚C
5
0
0
0.5
1
1.5
2
FORWARD VO LTAGE : V F(V)
Specifications
Part No.
Package
SCS110AX
3-pin
SCS110AG
2-pin
V RM (V)
V R (V)
Io (A)
IFSM (A)
Tj (˚C)
Tstg (˚C)
V F (V)
typ.
IF (A)
IR(µA)
typ.
V R (V)
trr (nsec)
typ.
600
600
10
40
150
-55 to +150
1.5
10
2
600
15
The content specified in this document is correct as of 23th. Apr.2010.
53X6308E 05.2010
Conditions
IF=10A
VR=400V
di/dt=-350A/µsec