RR264M-400
Diodes
Rectifying diode
RR264M- 400
zApplications
General rectification
zExternal dimensions (Unit : mm)
zLand size figure (Unit : mm)
0.1±0.1
0.05
1.2
0.85
1.6±0.1
2.6±0.1
①
3.5±0.2
3.05
zFeatures
1) Small power mold type. (PMDU)
2) High reliability.
PMDU
zConstruction
Silicon diffused junction
zStructure
0.9±0.1
0.8±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
zTaping dimensions (Unit : mm)
φ1.55±0.05
1.81±0.1
4.0±0.1
8.0±0.2
φ1.0±0.1
3.71±0.1
0.25±0.05
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
1.5MAX
zAbsolute maximum ratings (Ta=25°C)
Sym bol
Lim its
Unit
Peak revers e voltage (repetitive peak)
VR
400
V
Forward current (DC)
IF
Io
1
0.7
25
150
-55 to +150
A
A
A
Param eter
Average rectified forward current (*1)
Forward current s urge peak （ 60Hz・ 1cyc ）
Junction tem perature
Storage tem perature
IFSM
Tj
Ts tg
℃
℃
(*1) Mounted on epoxy board. 180 ° Half s ine wave
zElectrical characteristics (Ta=25°C)
Param eter
Sym bol
Min.
Typ.
Max.
Unit
Forward voltage
VF
-
-
1.1
V
IF =0.7A
Conditions
Revers e current
IR
-
-
10
uA
VR =400V
Rev.C
1/3
RR264M-400
Diodes
Ta=75℃
Ta=125℃
0.1
Ta=25℃
Ta=150℃
Ta=-25℃
0.01
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FORWARD CURRENT:IF(A)
1
REVERSE CURRENT:IR(nA)
zElectrical characteristic curves (Ta=25°C)
100000
100
Ta=150℃
Ta=125℃
10000
1000
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
f=1MHz
10
1
0.1
0.001
0
200
400
600
800
1000
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0
1200
1
400
0
REVERSE CURRENT:IR(nA)
960
950
940
AVE:940.7mV
930
400
350
50
AVE:44.0A
0
150
AVE:34.13nA
100
90
AVE:99.5pF
80
70
50
60
0
50
Ct DISPERSION MAP
100
Ta=25℃
IF=0.1A
IR=0.1A
Irr=0.1*IR
n=10pcs
4900
4890
4880
4870
4860
4850
AVE:4860ns
4840
4830
Ifsm
8.3ms 8.3ms
1cyc
50
4820
1000
0
1
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
IM=10mA
0
Rth(j-a)
100
100
1ms
DC
time
300us
Rth(j-c)
10
1
0.001
100
1.5
IF=0.5A
0.1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
FORWARD POWER
DISSIPATION:Pf(W)
100
1
Ta=25℃
f=1MHz
VR=0V
n=10pcs
trr DISPERSION MAP
50
30
100
200
IFSM DISRESION MAP
t
25
110
250
4810
Ifsm
20
120
300
PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms
8.3ms
RESERVE RECOVERY TIME:trr(ns)
1cyc
1cyc
15
130
4910
IfsmIfsm
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
140
IR DISPERSION MAP
150
100
5
150
Ta=25℃
VR=400V
n=30pcs
450
VF DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
300
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
IF=0.7A
n=30pcs
920
PEAK SURGE
FORWARD CURRENT:IFSM(A)
200
500
970
FORWARD VOLTAGE:VF(mV)
100
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
D=1/2
1
Sin(θ＝180)
0.5
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
0
0.5
1
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rev.C
1.5
2/3
RR264M-400
Diodes
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
2
REVERSE POWER
DISSIPATION:PR (W)
0.008
t
1.5
0.006
Sin(θ＝180)
D=1/2
0.004
DC
DC
1
0
0
100
200
300
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
400
T
VR
D=t/T
VR=15V
Tj=125℃
D=1/2
0.5
0.002
2
Io
Io
0A0
0V0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.01
Sin(θ＝180)
0A
0V
1.5
T
DC
1
Io
t
VR
D=t/T
VR=15V
Tj=125℃
D=1/2
0.5
Sin(θ＝180)
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
25
AVE:28.4kV
20
15
10
5
AVE:6.90kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1